SI9407 Search Results

SI9407 Price and Stock

Filter by Manufacturer


Vishay Siliconix SI9407BDY-T1-E3 MOSFET P-CH 60V 4.7A 8SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI9407BDY-T1-E3	Digi-Reel	18,943		1	1 $1.93 10 $1.23 100 $1.93 1000 $0.60233 10000 $0.60233	Buy Now
	SI9407BDY-T1-E3	Cut Tape	18,943		1	1 $1.93 10 $1.23 100 $1.93 1000 $0.60233 10000 $0.60233	Buy Now
	SI9407BDY-T1-E3	Reel	15,000		2,500	1 - 10 - 100 - 1000 - 10000 $0.54256	Buy Now
RS	SI9407BDY-T1-E3	Bulk			2,500	1 - 10 - 100 - 1000 - 10000 $1.11	Get Quote
New Advantage Corporation	SI9407BDY-T1-E3		10,000		1	1 - 10 - 100 - 1000 - 10000 $0.5	Buy Now
Vishay Siliconix SI9407BDY-T1-GE3 MOSFET P-CH 60V 4.7A 8SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI9407BDY-T1-GE3	Digi-Reel	1,644		1	1 $1.66 10 $1.049 100 $1.66 1000 $0.50449 10000 $0.50449	Buy Now
	SI9407BDY-T1-GE3	Cut Tape	1,644		1	1 $1.66 10 $1.049 100 $1.66 1000 $0.50449 10000 $0.50449	Buy Now
	SI9407BDY-T1-GE3	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $0.45257	Buy Now
RS	SI9407BDY-T1-GE3	Bulk			1	1 $1 10 $0.95 100 $0.85 1000 $0.85 10000 $0.85	Get Quote
Quest Components	SI9407BDY-T1-GE3		6			1 $1.4 10 $1.12 100 $1.12 1000 $1.12 10000 $1.12	Buy Now
New Advantage Corporation	SI9407BDY-T1-GE3		37,500		1	1 - 10 - 100 - 1000 - 10000 $0.5214	Buy Now
Vishay Intertechnologies SI9407BDY-T1-GE3 P-CHANNEL 60-V (D-S) MOSFET - Tape and Reel (Alt: SI9407BDY-T1-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SI9407BDY-T1-GE3	Reel	25,000	6 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.474	Buy Now
Mouser Electronics	SI9407BDY-T1-GE3		8,374			1 $1.22 10 $0.978 100 $0.702 1000 $0.505 10000 $0.443	Buy Now
Newark	SI9407BDY-T1-GE3	Cut Tape	28,428		5	1 $1.06 10 $0.906 100 $0.702 1000 $0.702 10000 $0.702	Buy Now
	SI9407BDY-T1-GE3	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $0.532	Buy Now
Bristol Electronics	SI9407BDY-T1-GE3		4,658			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	SI9407BDY-T1-GE3		1,442			1 $5.64 10 $5.64 100 $5.64 1000 $2.82 10000 $2.82	Buy Now

TTI	SI9407BDY-T1-GE3	Reel	50,000		2,500	1 - 10 - 100 - 1000 - 10000 $0.391	Buy Now
	SI9407BDY-T1-GE3	Cut Tape	1,600		10	1 - 10 $0.88 100 $0.88 1000 $0.88 10000 $0.88	Buy Now
TME	SI9407BDY-T1-GE3		3,655		1	1 $1.165 10 $0.829 100 $0.547 1000 $0.406 10000 $0.371	Buy Now
	SI9407BDY-T1-GE3		2,312		1	1 $1.165 10 $0.829 100 $0.547 1000 $0.406 10000 $0.353	Buy Now
Chip 1 Exchange	SI9407BDY-T1-GE3		432,549			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Asia	SI9407BDY-T1-GE3			8 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Chip-Germany GmbH	SI9407BDY-T1-GE3		2,272			1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	SI9407BDY-T1-GE3		47,500	7 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Wuhan P&S	SI9407BDY-T1-GE3		302,500		1	1 $0.84 10 $0.84 100 $0.3 1000 $0.2 10000 $0.2	Buy Now
Vishay Intertechnologies SI9407BDY-T1-E3 P-CHANNEL 60-V (D-S) MOSFET - Tape and Reel (Alt: SI9407BDY-T1-E3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SI9407BDY-T1-E3	Reel	2,500	13 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.4748	Buy Now
Mouser Electronics	SI9407BDY-T1-E3		80,004			1 $1.43 10 $0.969 100 $0.681 1000 $0.526 10000 $0.468	Buy Now
Newark	SI9407BDY-T1-E3	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $0.503	Buy Now
TTI	SI9407BDY-T1-E3	Reel	7,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.493	Buy Now
TME	SI9407BDY-T1-E3				1	1 $0.759 10 $0.665 100 $0.551 1000 $0.364 10000 $0.333	Get Quote

Chip 1 Exchange	SI9407BDY-T1-E3		345			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Asia	SI9407BDY-T1-E3			15 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Chip-Germany GmbH	SI9407BDY-T1-E3		2,493			1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	SI9407BDY-T1-E3			14 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies SI9407BDY-T1-GE3. Mosfet, P Channel, -60V, -4.7A, Soic-8, Full Reel; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:4.7A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Power Dissipation:5W Rohs Compliant: No \|Vishay SI9407BDY-T1-GE3.
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	SI9407BDY-T1-GE3.	Reel	25,000		2,500	1 - 10 - 100 - 1000 - 10000 $0.532	Buy Now

Find more SI9407 price and stock on Findchips.com

SI9407 Datasheets (12)

Part	Manufacturer	Description	Datasheet Type	PDF
Si9407AEY	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
SI9407AEY	Vishay	FET: P CHANNEL, 60V, 3.5A, 0.12 OHM, PACKAGE SO8	Original	PDF
Si9407AEY	Vishay Intertechnology	P-Channel 60-V (D-S), 175°C MOSFET	Original	PDF
SI9407AEY	Vishay Siliconix	P-Channel 60-V (D-S), 175°C MOSFET	Original	PDF
SI9407AEY	Vishay Telefunken	P-Channel 60-V (D-S), 175°C MOSFET	Original	PDF
SI9407AEY	Siliconix	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Mosfet, P-Channel, -60, Dual, Pkg Style, SO-8	Scan	PDF
SI9407AEY-DS	Vishay Telefunken	DS-Spice Model for Si9407AEY	Original	PDF
Si9407AEY SPICE Device Model	Vishay	P-Channel 50-V (D-S) MOSFET	Original	PDF
SI9407AEY-T1	Vishay Intertechnology	P-Channel 60-V (D-S), 175°C MOSFET	Original	PDF
SI9407BDY-T1-E3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 60V 4.7A 8-SOIC	Original	PDF
SI9407BDY-T1-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 60V 4.7A 8-SOIC	Original	PDF
Si9407DY	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF

SI9407 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Si9407AEY Abstract: No abstract text available Text: Si9407AEY Vishay Siliconix P-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 ID (A) 0.120 at VGS = - 10 V ± 3.5 0.15 at VGS = - 4.5 V ± 3.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs	Original	Si9407AEY 2002/95/EC Si9407AEY-T1-E3 Si9407AEY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Si9407BDY-T1-GE3 Abstract: Si9407BDY Si9407BDY-T1-E3 Text: New Product Si9407BDY Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) - 60 0.120 at VGS = - 10 V - 4.7 0.150 at VGS = - 4.5 V - 4.2 Qg (Typ.) 8 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si9407BDY 2002/95/EC Si9407BDY-T1-E3 Si9407BDY-T1-GE3 11-Mar-11	PDF
C 6090 Abstract: AN609 Si9407AEY Text: Si9407AEY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	Si9407AEY AN609 17-Jan-06 C 6090	PDF
Si9407AEY Abstract: Si9407AEY SPICE Device Model Text: SPICE Device Model Si9407AEY Vishay Siliconix P-Channel 50-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si9407AEY capacita30V, 05-Nov-99 Si9407AEY SPICE Device Model	PDF
Si9407AEY Abstract: No abstract text available Text: Si9407AEY Vishay Siliconix P-Channel 60-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) −60 60 rDS(on) (W) ID (A) 0.120 @ VGS = −10 V "3.5 0.15 @ VGS = −4.5 V "3.1 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature Pb-free Available	Original	Si9407AEY Si9407AEY--T1 Si9407AEY--E3 08-Apr-05	PDF
Si9407DY Abstract: No abstract text available Text: Si9407DY Siliconix PĆChannel EnhancementĆMode MOSFET Product Summary VDS V -60 rDS(on) (W) ID (A) 0.150 @ VGS = -10 V "3.0 0.240 @ VGS = -4.5 V "2.4 S S S SOĆ8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D Top View G D D D D PĆChannel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)	Original	Si9407DY Current20 P-38889--Rev.	PDF
Si9407DY Abstract: No abstract text available Text: Si9407DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –60 rDS(on) (W) ID (A) 0.150 @ VGS = –10 V "3.0 0.240 @ VGS = –4.5 V "2.4 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)	Original	Si9407DY S-47958--Rev. 15-Apr-96	PDF
Si9407AEY Abstract: No abstract text available Text: Si9407AEY Vishay Siliconix P-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 ID (A) 0.120 at VGS = - 10 V ± 3.5 0.15 at VGS = - 4.5 V ± 3.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs	Original	Si9407AEY 2002/95/EC Si9407AEY-T1-E3 Si9407AEY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
27k ohm resistor Abstract: 27K resistor datasheet capacitor 47uF DO5022P-154 EC10QS04 RESISTOR 1210 Si9407AEY 27k capacitor capacitor 1uF 15V data sheet of resistor 33k Text: 13.5V to 16.5V INPUT 1 C1 0.47uF 2 R2 27k C2 27nF 10 V+ C5 4.7uF 25V X5R VL EXT FREQ MAX1846 R1 150k 300kHz 3 CS PGND 4 FB REF GND 6 P1 Si9407AEY 0.15Ohm 9 -15V @ 0.25A L1 150uH DO5022P -154 8 0.25Ohm COMP C3 56pF C4 0.1uF R3 33k 7 5 D1 EC10 QS04 C6 10uF	Original	MAX1846 300kHz) Si9407AEY 15Ohm 150uH DO5022P 25Ohm 1846-15c 55mVpp 27k ohm resistor 27K resistor datasheet capacitor 47uF DO5022P-154 EC10QS04 RESISTOR 1210 27k capacitor capacitor 1uF 15V data sheet of resistor 33k	PDF
Untitled Abstract: No abstract text available Text: New Product Si9407BDY Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) - 60 0.120 at VGS = - 10 V - 4.7 0.150 at VGS = - 4.5 V - 4.2 Qg (Typ.) 8 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si9407BDY 2002/95/EC Si9407BDY-T1-E3 Si9407BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Untitled Abstract: No abstract text available Text: SPICE Device Model Si9407BDY www.vishay.com Vishay Siliconix P-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	Si9407BDY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Si9407DY Abstract: No abstract text available Text: Si9407DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –60 rDS(on) (W) ID (A) 0.150 @ VGS = –10 V "3.0 0.240 @ VGS = –4.5 V "2.4 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)	Original	Si9407DY S-47958--Rev. 15-Apr-96	PDF
Si9407AEY Abstract: DSA0016549 Text: Si9407AEY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –60 rDS(on) (W) ID (A) 0.120 @ VGS = –10 V "3.5 0.15 @ VGS = –4.5 V "3.1 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)	Original	Si9407AEY S-53709--Rev. 04-Aug-97 DSA0016549	PDF
Si9407AEY Abstract: 99445 Text: Si9407AEY Vishay Siliconix P-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY VDS (V) –60 rDS(on) (W) ID (A) 0.120 @ VGS = –10 V "3.5 0.15 @ VGS = –4.5 V "3.1 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	Si9407AEY S-99445--Rev. 29-Nov-99 99445	PDF

SI9407BDY-T1-GE3 Abstract: No abstract text available Text: New Product Si9407BDY Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) - 60 0.120 at VGS = - 10 V - 4.7 0.150 at VGS = - 4.5 V - 4.2 Qg (Typ.) 8 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si9407BDY 2002/95/EC Si9407BDY-T1-E3 Si9407BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Si9407AEY Abstract: 150CA Text: Si9407AEY Vishay Siliconix P-Channel 60-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) −60 60 rDS(on) (W) ID (A) 0.120 @ VGS = −10 V "3.5 0.15 @ VGS = −4.5 V "3.1 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature Pb-free Available	Original	Si9407AEY Si9407AEY--T1 Si9407AEY--E3 150CA	PDF
Untitled Abstract: No abstract text available Text: New Product Si9407BDY Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 ID (A)a rDS(on) (Ω) 0.120 at VGS = - 10 V - 4.7 0.150 at VGS = - 4.5 V - 4.2 Qg (Typ) • TrenchFET Power MOSFET • 100 % UIS Tested RoHS 8 nC APPLICATIONS	Original	Si9407BDY Si9407BDY-T1-E3 18-Jul-08	PDF
Untitled Abstract: No abstract text available Text: New Product Si9407BDY Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) - 60 0.120 at VGS = - 10 V - 4.7 0.150 at VGS = - 4.5 V - 4.2 Qg (Typ.) 8 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si9407BDY 2002/95/EC Si9407BDY-T1-E3 Si9407BDY-T1-GE3 11-Mar-11	PDF
Untitled Abstract: No abstract text available Text: New Product Si9407BDY Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) - 60 0.120 at VGS = - 10 V - 4.7 0.150 at VGS = - 4.5 V - 4.2 Qg (Typ.) 8 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si9407BDY 2002/95/EC Si9407BDY-T1-E3 Si9407BDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Si9407AEY Abstract: No abstract text available Text: SPICE Device Model Si9407AEY Vishay Siliconix P-Channel 50-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si9407AEY 18-Jul-08	PDF
Si9407BDY Abstract: SI9407BDY-T1-GE3 Si9407BDY-T1-E3 Text: New Product Si9407BDY Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) - 60 0.120 at VGS = - 10 V - 4.7 0.150 at VGS = - 4.5 V - 4.2 Qg (Typ.) 8 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si9407BDY 2002/95/EC Si9407BDY-T1-E3 Si9407BDY-T1-GE3 18-Jul-08	PDF
Si9407AEY-T1-E3 Abstract: Si9407AEY-T1-GE3 Si9407AEY Text: Si9407AEY Vishay Siliconix P-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 ID (A) 0.120 at VGS = - 10 V ± 3.5 0.15 at VGS = - 4.5 V ± 3.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs	Original	Si9407AEY 2002/95/EC Si9407AEY-T1-E3 Si9407AEY-T1-GE3 18-Jul-08	PDF
Si9407AEY-T1-E3 Abstract: Si9407AEY Si9407AEY-T1-GE3 Text: Si9407AEY Vishay Siliconix P-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 ID (A) 0.120 at VGS = - 10 V ± 3.5 0.15 at VGS = - 4.5 V ± 3.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs	Original	Si9407AEY 2002/95/EC Si9407AEY-T1-E3 Si9407AEY-T1-GE3 11-Mar-11	PDF
Untitled Abstract: No abstract text available Text: Si9407AEY VISHAY Siliconix P-Channel 60-V D-S , 175°C MOSFET New Product Product Summary VDS(V) rDS(on) (£2) -60 0.120 @VGs = -10 V 0.15 @ Ygs = ^1.5 V Id (A) ±3.5 ±3.1 Vv^V°sf6ls P 0- >N e t s s s SO-8 D D D D P-Channel MOSFET Absolute Maximum Ratings (Ta = 25°C Unless Otherwise Noted)	OCR Scan	Si9407AEY S-57253â 24-Feb-98 S2SM735 DD17flflT	PDF

SI9407 Search Results

SI9407 Price and Stock

Vishay Siliconix SI9407BDY-T1-E3

Vishay Siliconix SI9407BDY-T1-GE3

Vishay Intertechnologies SI9407BDY-T1-GE3

Vishay Intertechnologies SI9407BDY-T1-E3

Vishay Intertechnologies SI9407BDY-T1-GE3.

SI9407 Datasheets (12)

SI9407 Datasheets Context Search

Si9407AEY

Si9407BDY-T1-GE3

C 6090

Si9407AEY

Si9407AEY

Si9407DY

Si9407DY

Si9407AEY

27k ohm resistor

Untitled

Untitled

Si9407DY

Si9407AEY

Si9407AEY

SI9407BDY-T1-GE3

Si9407AEY

Untitled

Untitled

Untitled

Si9407AEY

Si9407BDY

Si9407AEY-T1-E3

Si9407AEY-T1-E3

Untitled