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    SI9928DY Price and Stock

    Vishay Siliconix SI9928DY-T1

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    Bristol Electronics SI9928DY-T1 2,260 3
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    • 10000 $0.594
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    SI9928DY-T1 1,515
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    Quest Components SI9928DY-T1 1,808
    • 1 $2.4
    • 10 $2.4
    • 100 $2.4
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    Vishay Siliconix SI9928DY

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    Bristol Electronics SI9928DY 5
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    SI9928DY Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si9928DY Unknown Metal oxide N/P-channel field effect transistor enh. Original PDF
    SI9928DY Siliconix Dual Enhancement-Mode MOSFET (N- and P-Channel) Original PDF
    Si9928DY Toshiba Power MOSFETs Cross Reference Guide Original PDF
    Si9928DY Vishay Intertechnology Complimentary 20-V (D-S) MOSFET Original PDF
    SI9928DY Vishay Siliconix Complimentary 20-V (D-S) MOSFET Original PDF
    SI9928DY-DS Vishay Telefunken DS-Spice Model for Si9928DY Original PDF
    Si9928DY SPICE Device Model Vishay N- and P-Channel 20-V (D-S) MOSFET Original PDF
    SI9928DY-T1 Vishay Intertechnology Complimentary 20-V (D-S) MOSFET Original PDF

    SI9928DY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si4532DY

    Abstract: Si4539DY Si9928DY Si9939DY Si9942DY Si9958DY P-channel
    Text: Transistors Siliconix Complementary LITTLE FOOTR Devices 8-Pin SOIC Maximum Ratings rDS(on) (W) Part Number VDS (V) VGS = "10 V Si9928DY VGS = "2.7 V ID (A) Configuration 0.05 0 11 0.11 0.08 0 19 0.19 "5 "3.4 34 N-Channel P Ch P-Channel l 0.125 0.2 0.25


    Original     		PDF Si9928DY Si9958DY Si4539DY Si9942DY Si9939DY Si4532DY P-channel

    9928DY

    Abstract: Si9928DY SPICE Device Model Si9928DY 9928D
    Text: SPICE Device Model Si9928DY Vishay Siliconix N- and P-Channel 20-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si9928DY 05-Nov-99 9928DY 9928DY Si9928DY SPICE Device Model 9928D

    Si6552DQ

    Abstract: Si9529DY Si9928DY
    Text: Si9928DY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (A) 0.05 @ VGS = 4.5 V "5.0 0.06 @ VGS = 3.0 V "4.2 0.08 @ VGS = 2.7 V "3.6 0.11 @ VGS = –4.5 V "3.4 0.15 @ VGS = –3.0 V "2.9 0.19 @ VGS = –2.7 V


    Original     		PDF Si9928DY Si9529DY Si6552DQ S-47958--Rev. 15-Apr-96

    Si9928DY

    Abstract: 701.43
    Text: Si9928DY Vishay Siliconix Complimentary 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N Ch N-Channel l rDS(on) (W) ID (A) 0.05 @ VGS = 4.5 V "5.0 0.06 @ VGS = 3.0 V "4.2 0.08 @ VGS = 2.7 V "3.6 0.11 @ VGS = –4.5 V "3.4 0.15 @ VGS = –3.0 V "2.9 0.19 @ VGS = –2.7 V


    Original     		PDF Si9928DY S-00652--Rev. 27-Mar-00 701.43

    Si9928DY

    Abstract: No abstract text available
    Text: Si9928DY Siliconix Dual EnhancementĆMode MOSFETs NĆ and PĆChannel Product Summary VDS (V) NĆChannel Ch l rDS(on) (W) ID (A) 0.05 @ VGS = 4.5 V "5.0 0.06 @ VGS = 3.0 V "4.2 0.08 @ VGS = 2.7 V "3.6 0.11 @ VGS = -4.5 V "3.4 0.15 @ VGS = -3.0 V "2.9 0.19 @ VGS = -2.7 V


    Original     		PDF Si9928DY S-42910--Rev.

    Untitled

    Abstract: No abstract text available
    Text: Si9928DY Vishay Siliconix Complimentary 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N Ch N-Channel l rDS(on) (W) ID (A) 0.05 @ VGS = 4.5 V "5.0 0.06 @ VGS = 3.0 V "4.2 0.08 @ VGS = 2.7 V "3.6 0.11 @ VGS = –4.5 V "3.4 0.15 @ VGS = –3.0 V "2.9 0.19 @ VGS = –2.7 V


    Original     		PDF Si9928DY 08-Apr-05

    Si6552DQ

    Abstract: Si9529DY Si9928DY si9928 Si952
    Text: Si9928DY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (A) 0.05 @ VGS = 4.5 V "5.0 0.06 @ VGS = 3.0 V "4.2 0.08 @ VGS = 2.7 V "3.6 0.11 @ VGS = –4.5 V "3.4 0.15 @ VGS = –3.0 V "2.9 0.19 @ VGS = –2.7 V


    Original     		PDF Si9928DY Si9529DY Si6552DQ S-47958--Rev. 15-Apr-96 si9928 Si952

    Si6552DQ

    Abstract: Si9529DY Si9928DY
    Text: Si9928DY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (A) 0.05 @ VGS = 4.5 V "5.0 0.06 @ VGS = 3.0 V "4.2 0.08 @ VGS = 2.7 V "3.6 0.11 @ VGS = –4.5 V "3.4 0.15 @ VGS = –3.0 V "2.9 0.19 @ VGS = –2.7 V


    Original     		PDF Si9928DY Si9529DY Si6552DQ S-47958--Rev. 15-Apr-96

    Si9928DY

    Abstract: No abstract text available
    Text: Si9928DY Vishay Siliconix Complimentary 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N Ch N-Channel l rDS(on) (W) ID (A) 0.05 @ VGS = 4.5 V "5.0 0.06 @ VGS = 3.0 V "4.2 0.08 @ VGS = 2.7 V "3.6 0.11 @ VGS = –4.5 V "3.4 0.15 @ VGS = –3.0 V "2.9 0.19 @ VGS = –2.7 V


    Original     		PDF Si9928DY 18-Jul-08

    Si9928DY

    Abstract: Si6552DQ Si9529DY
    Text: Si9928DY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (A) 0.05 @ VGS = 4.5 V "5.0 0.06 @ VGS = 3.0 V "4.2 0.08 @ VGS = 2.7 V "3.6 0.11 @ VGS = –4.5 V "3.4 0.15 @ VGS = –3.0 V "2.9 0.19 @ VGS = –2.7 V


    Original     		PDF Si9928DY Si9529DY Si6552DQ S-47958--Rev. 15-Apr-96

    Untitled

    Abstract: No abstract text available
    Text: SI9928DY Transistors Complementary Pair of MOSFETs V BR DSS (V)20 V(BR)GSS (V)12 I(D) Max. (A)3.4 I(DM) Max. (A) Pulsed I(D)2.8 @Temp (øC)70’ IDM Max (@25øC Amb)10 Absolute Max. Power Diss. (W)2.0 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ


    Original     		PDF SI9928DY

    70611

    Abstract: FET pair n-channel p-channel mosfet discrete totem pole drive CIRCUIT 2n7000+complement 2n7000 complement logic level complementary MOSFET mosfet discrete totem pole CIRCUIT Logic Level p-Channel Power MOSFET AN804 Si9942DY
    Text: AN804 Vishay Siliconix P-Channel MOSFETs, the Best Choice for High-Side Switching Historically, p-channel FETs were not considered as useful as their n-channel counterparts. The higher resistivity of p-type silicon, resulting from its lower carrier mobility, put it at a


    Original     		PDF AN804 retur5600 VP0300L O-226AA VN0300L TP0610L 2N7000 70611 FET pair n-channel p-channel mosfet discrete totem pole drive CIRCUIT 2n7000+complement 2n7000 complement logic level complementary MOSFET mosfet discrete totem pole CIRCUIT Logic Level p-Channel Power MOSFET AN804 Si9942DY

    SR73H

    Abstract: TEC H bridge SR73H2 pwm control of tec TEC Driver LTC1923 LTC2053 ntc 10k 10% D5 TEC control circuit TEC LTC1658
    Text: LTC1923 High Efficiency Thermoelectric Cooler Controller DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LTC 1923 is a pulse width modulator intended for thermoelectric cooler TEC or heater applications requiring either unidirectional or bidirectional drive circuits. All


    Original     		PDF LTC1923 LTC1923 LTC1658 14-Bit LTC1693-1 LTC2053 1923f SR73H TEC H bridge SR73H2 pwm control of tec TEC Driver LTC2053 ntc 10k 10% D5 TEC control circuit TEC LTC1658

    TCA780

    Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
    Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP


    Original     		PDF 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP TCA780 TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G

    TEC H bridge

    Abstract: No abstract text available
    Text: LTC1923 High Efficiency Thermoelectric Cooler Controller DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LTC 1923 is a pulse width modulator intended for thermoelectric cooler TEC or heater applications requiring either unidirectional or bidirectional drive circuits. All


    Original     		PDF LTC1923 LTC1923 LTC1658 14-Bit LTC1693-1 LTC2053 50nV/Â 1923f TEC H bridge

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    TEC Driver

    Abstract: TEC H bridge SR73H pwm control of tec MNB 20 SR73H2ER100F SR73H2 SILICONIX Si9801 LTC1923 diode bridge LT 810
    Text: LTC1923 High Efficiency Thermoelectric Cooler Controller DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LTC 1923 is a pulse width modulator intended for thermoelectric cooler TEC or heater applications requiring either unidirectional or bidirectional drive circuits. All


    Original     		PDF LTC1923 LTC1923 LTC1658 14-Bit LTC1693-1 LTC2053 1923f TEC Driver TEC H bridge SR73H pwm control of tec MNB 20 SR73H2ER100F SR73H2 SILICONIX Si9801 diode bridge LT 810

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    TEC H bridge

    Abstract: No abstract text available
    Text: Final Electrical Specifications LTC1923 High Efficiency Thermoelectric Cooler Controller • ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LTC 1923 is a pulse width modulator intended for thermoelectric cooler TEC or heater applications requiring either unidirectional or bidirectional drive circuits. All


    Original     		PDF LTC1923 28-Lead 1923i TEC H bridge

    FET pair n-channel p-channel

    Abstract: VN0300L equivalent FET P-Channel Switch 2N7000 MOSFET mosfet discrete totem pole CIRCUIT logic level complementary MOSFET Siliconix "fet" 2n7000 complement mosfet discrete totem pole drive CIRCUIT VP2020L
    Text: AN804 P-Channel MOSFETs, the Best Choice for High-Side Switching Historically, p-channel FETs were not considered as useful as their n-channel counterparts. The higher resistivity of p-type silicon, resulting from its lower carrier mobility, put it at a disadvantage compared to n-type silicon.


    Original     		PDF AN804 10-Mar-97 VP0300L O-226AA VN0300L TP0610L 2N7000 FET pair n-channel p-channel VN0300L equivalent FET P-Channel Switch 2N7000 MOSFET mosfet discrete totem pole CIRCUIT logic level complementary MOSFET Siliconix "fet" 2n7000 complement mosfet discrete totem pole drive CIRCUIT VP2020L

    rtd pt100 interface to 8051

    Abstract: 24V 20A SIEMENS battery charger LM2560 smd 58a transistor 6-pin pic 16f84 PWM circuit scr control light intensity using 8051 8051 microwave oven design of FM transmitter final year project project pic 16f84 pwm "white led" 5mm
    Text: INDEX Order Code Description _ 102-271 794-740 102-246 794-752 101-930 102-283 101-886 101-953 _ _ 688-137 688-149 _ _ 597-387 705-536 473-728 473-753 473-730 473-741 473-881 _ _ _ 690-648 690-703 690-636 791-180 _ 791-805 _ 101-564 101-540 101-552 101-515


    Original     		PDF OPA340PA: ADS7816P: 12-Bit 200KHz OPA2337PA: ADS7822P: INA125UA: OPA680U: OPA547F: rtd pt100 interface to 8051 24V 20A SIEMENS battery charger LM2560 smd 58a transistor 6-pin pic 16f84 PWM circuit scr control light intensity using 8051 8051 microwave oven design of FM transmitter final year project project pic 16f84 pwm "white led" 5mm

    TEMIC K153P

    Abstract: TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910
    Text: Quality and Reliability Report 1997 TEMIC Semiconductors 07.97 Table of Contents TEMIC Quality Policy .1 Quality System .2


    Original     		PDF WN1053 WN1087-18R WN1087-TR1 WN1090 WN1125 WN1142 WN1158-TA WN1165-TR1 WN1170 WN934 TEMIC K153P TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910

    p-channel

    Abstract: Si4558DY
    Text: Tem ic Semiconductors S08 SOT23 TO39 DIP14 LITTLE FOOT continued •. y :'-* r }y if. Part Number Complementary LITTLE FOOT® Devices (SOIC 8) V a s* d t2 .7 V Id (A) GosflgnratioB 0.04 0.074 0.08 0.19 6 5 ±5 ±3.4 ±2.5 ±3 ±3.5 ±3.5 3.5 2.3 ±5.8


    OCR Scan     		PDF DIP14 Si9529DY Si9928DY Si9942DY Si9958DY Si9952DY Si4558DY Si4949EY Si9939DY Si4532DY p-channel

    Untitled

    Abstract: No abstract text available
    Text: Tem ic SÌ9928DY Siliconix Dual Enhancement-Mode MOSFETs N- and P-Channel Product Summary N-Channel r DS(on) ( ß ) 20 P-Channel -2 0 (A) Id 0.05 @ V Gs = 4.5 V ± 5 .0 0.06 @ V gs = 3.0 V ± 4 .2 0.08 @ V GS = 2.7 V ± 3 .6 0.11 @ V GS = - 4 .5 V ± 3 .4


    OCR Scan     		PDF 9928DY P-36733--Rev. P-36733--