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    SIC DIODE DIE Search Results

    SIC DIODE DIE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TRS10E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 10 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TRS10H120H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 1200 V, 10 A, TO-247-2L Visit Toshiba Electronic Devices & Storage Corporation
    TRS6E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 6 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TRS3E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 3 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation

    SIC DIODE DIE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FF600R12IS4F

    Abstract: No abstract text available
    Text: Technische Information / technical information FF600R12IS4F IGBT-Module IGBT-modules PrimePACK 2 Modul mit schnellem IGBT2 und SiC Diode für hochfrequentes Schalten PrimePACK™2 with fast IGBT2 and SiC diode for high switching frequency IGBT-Wechselrichter / IGBT-inverter


    Original     		FF600R12IS4F FF600R12IS4F PDF

    FF600R12IS4F

    Abstract: No abstract text available
    Text: Technische Information / technical information FF600R12IS4F IGBT-Module IGBT-modules PrimePACK 2 Modul mit schnellem IGBT2 und SiC Diode für hochfrequentes Schalten und NTC PrimePACK™2 module with fast IGBT2 and SiC Diode for high frequency switching and NTC


    Original     		FF600R12IS4F FF600R12IS4F PDF

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / technical information FF600R12IS4F IGBT-Module IGBT-modules PrimePACK 2 Modul mit schnellem IGBT2, SiC Diode und NTC für hochfrequentes Schalten PrimePACK™2 with fast IGBT2, SiC diode and NTC for high switching frequency IGBT-Wechselrichter / IGBT-inverter


    Original     		FF600R12IS4F PDF

    12 VOLT 2 AMP smps circuit

    Abstract: circuit for 12 VOLT 6 AMP smps mathcad forward converter design mathcad MOSFET and parallel Schottky diode 12 VOLT 10 AMP smps mathcad pfc Cree SiC diode die mathcad INDUCTOR DESIGN diode schottky 600v
    Text: Selection Guide of SiC Schottky Diode in CCM PFC Applications - August 2006 Selection Guide of SiC Schottky Diode in CCM PFC Applications Silicon Carbide Schottky diodes are ideal devices for CCM PFC boost diode applications because of the superior reverse recovery characteristics – zero reverse recovery current. Selection of


    Original     		CPWR-AN05, 12 VOLT 2 AMP smps circuit circuit for 12 VOLT 6 AMP smps mathcad forward converter design mathcad MOSFET and parallel Schottky diode 12 VOLT 10 AMP smps mathcad pfc Cree SiC diode die mathcad INDUCTOR DESIGN diode schottky 600v PDF

    Untitled

    Abstract: No abstract text available
    Text: MKE 11R600DCGFC ID25 = 15 A VDSS = 600 V RDS on max = 0.165 CoolMOS 1) Power MOSFET with SiC Diode Boost topology ISOPLUS i4™ 3 Electrically isolated back surface 2500 V electrical isolation SiC D 4 1  1 E72873 T 2 Features MOSFET T Symbol Conditions


    Original     		11R600DCGFC E72873 20100920a PDF

    MKE11R600DCGFC

    Abstract: E72873 12 mke
    Text: MKE 11R600DCGFC CoolMOS 1 Power MOSFET ID25 = 15 A VDSS = 600 V RDS on) max = 0.165 Ω with SiC Diode Boost topology Electrically isolated back surface 2500 V electrical isolation ISOPLUS i4™ 3 SiC D 4 1  1 T 2 Symbol Conditions VDSS TVJ = 25°C Maximum Ratings


    Original     		11R600DCGFC 00DCGFC 20100920a MKE11R600DCGFC E72873 12 mke PDF

    d02s60c

    Abstract: idv02s60c d02s60 JESD22 d02s6
    Text: IDV02S60C 2nd Generation thinQ!TM SiC Schottky Diode Fully isolated package with similar Rth,jc as the standard T0220 by using proprietary die attach processing Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark


    Original     		IDV02S60C T0220 PG-TO220-2 d02s60c idv02s60c d02s60 JESD22 d02s6 PDF

    Storage of Products Supplied by Infineon Technologies

    Abstract: IEC60721-3-3
    Text: IDC04S60CE 2nd generation thinQ!TM SiC Schottky Diode A Features: Applications: •      Revolutionary Semiconductor Material Silicon Carbide Switching Behaviour Benchmark No Reverse Recovery / No Forward Recovery Temperature Independent Switching


    Original     		IDC04S60CE L4704E, Storage of Products Supplied by Infineon Technologies IEC60721-3-3 PDF

    IEC60721

    Abstract: IFN 152 IEC60721-3-3 Storage of Products Supplied by Infineon Technologies
    Text: IDC08S60CE 2nd generation thinQ!TM SiC Schottky Diode A Features: Applications: •      Revolutionary Semiconductor Material Silicon Carbide Switching Behaviour Benchmark No Reverse Recovery / No Forward Recovery Temperature Independent Switching


    Original     		IDC08S60CE L4714E, IEC60721 IFN 152 IEC60721-3-3 Storage of Products Supplied by Infineon Technologies PDF

    MS 1117

    Abstract: IEC60721-3-3 IEC60721 Storage of Products Supplied by Infineon Technologies IDC06S60CE
    Text: IDC06S60CE 2nd generation thinQ!TM SiC Schottky Diode A Features: Applications: •      Revolutionary Semiconductor Material Silicon Carbide Switching Behaviour Benchmark No Reverse Recovery / No Forward Recovery Temperature Independent Switching


    Original     		IDC06S60CE L4734E, MS 1117 IEC60721-3-3 IEC60721 Storage of Products Supplied by Infineon Technologies IDC06S60CE PDF

    IEC60721-3-3

    Abstract: Storage of Products Supplied by Infineon Technologies sic wafer 100 mm bare die schottky diode IDT05S60
    Text: IDC05S60CE 2nd generation thinQ!TM SiC Schottky Diode A Features: Applications: •      Revolutionary Semiconductor Material Silicon Carbide Switching Behaviour Benchmark No Reverse Recovery / No Forward Recovery Temperature Independent Switching


    Original     		IDC05S60CE L4724E, IEC60721-3-3 Storage of Products Supplied by Infineon Technologies sic wafer 100 mm bare die schottky diode IDT05S60 PDF

    Untitled

    Abstract: No abstract text available
    Text: IDC08S60CE 2nd generation thinQ!TM SiC Schottky Diode Features: Applications: • • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior


    Original     		IDC08S60CE PDF

    IDC05S60C

    Abstract: IDT05S60C silicon carbide
    Text: IDC05S60C 2nd generation thinQ!TM SiC Schottky Diode FEATURES: Applications: • • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior


    Original     		IDC05S60C IDC05S60C IDT05S60C silicon carbide PDF

    IDC04S60C

    Abstract: IDT04S60C SCHOTTKY 4A 600V silicon carbide
    Text: IDC04S60C 2nd generation thinQ!TM SiC Schottky Diode FEATURES: Applications: • • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior


    Original     		IDC04S60C IDC04S60C IDT04S60C SCHOTTKY 4A 600V silicon carbide PDF

    IDC08S60C

    Abstract: IDT08S60C D0135
    Text: IDC08S60C 2nd generation thinQ!TM SiC Schottky Diode FEATURES: Applications: • • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior


    Original     		IDC08S60C IDC08S60C IDT08S60C D0135 PDF

    IDC06S60C

    Abstract: IDT06S60C
    Text: IDC06S60C 2nd generation thinQ!TM SiC Schottky Diode FEATURES: Applications: • • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior


    Original     		IDC06S60C IDC06S60C IDT06S60C PDF

    Untitled

    Abstract: No abstract text available
    Text: IDC05S60CE 2nd generation thinQ!TM SiC Schottky Diode Features: Applications: • • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior


    Original     		IDC05S60CE PDF

    Untitled

    Abstract: No abstract text available
    Text: IDC06S60CE 2nd generation thinQ!TM SiC Schottky Diode Features: Applications: • • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior


    Original     		IDC06S60CE PDF

    Storage of Products Supplied by Infineon Technologies

    Abstract: IEC60721-3-3
    Text: IDC05S120E 1200V thinQ!TM SiC Schottky Diode A Features: Applications: •         Revolutionary Semiconductor Material Silicon Carbide Switching Behaviour Benchmark No Reverse Recovery / No Forward Recovery Temperature Independent Switching


    Original     		IDC05S120E L4926E, Storage of Products Supplied by Infineon Technologies IEC60721-3-3 PDF

    IEC60721-3-3

    Abstract: L4936E IEC60721 Storage of Products Supplied by Infineon Technologies IDC08S120E Infineon Automotive Technology
    Text: IDC08S120E 1200V thinQ!TM SiC Schottky Diode A Features: Applications: •         Revolutionary Semiconductor Material Silicon Carbide Switching Behaviour Benchmark No Reverse Recovery / No Forward Recovery Temperature Independent Switching


    Original     		IDC08S120E L4936E, IEC60721-3-3 L4936E IEC60721 Storage of Products Supplied by Infineon Technologies IDC08S120E Infineon Automotive Technology PDF

    Storage of Products Supplied by Infineon Technologies

    Abstract: IEC60721-3-3 IEC60721 L4926E
    Text: IDC73D120T6H 1200V thinQ!TM SiC Schottky Diode A Features: Applications: •         Revolutionary Semiconductor Material Silicon Carbide Switching Behaviour Benchmark No Reverse Recovery / No Forward Recovery Temperature Independent Switching


    Original     		IDC73D120T6H IDC05S120E L4926E, Storage of Products Supplied by Infineon Technologies IEC60721-3-3 IEC60721 L4926E PDF

    JESD22

    Abstract: No abstract text available
    Text: TM 1200V thinQ! IDC05S120E SiC Schottky Diode Features: Applications: A • • • • • C • • • • Revolutionary Semiconductor Material Silicon Carbide Switching Behaviour Benchmark No Reverse Recovery / No Forward Recovery Temperature Independent Switching


    Original     		IDC05S120E JESD22 PDF

    Untitled

    Abstract: No abstract text available
    Text: S6203 Data Sheet SiC Schottky Barrier Diode Bare Die VR 650V IF 20A*1 31nC QC lFeatures lInner circuit 1 Shorter recovery time C) 2) Reduced temperature dependence (C) Cathode (A) Anode 3) High-speed switching possible (A) lConstruction Silicon carbide epitaxial planer type


    Original     		S6203 R1102B PDF

    Untitled

    Abstract: No abstract text available
    Text: S6302 Data Sheet SiC Schottky Barrier Diode Bare Die VR 1200V IF 10A*1 34nC QC lFeatures lInner circuit C 1) Shorter recovery time 2) Reduced temperature dependence (C) Cathode (A) Anode 3) High-speed switching possible (A) lConstruction Silicon carbide epitaxial planer type


    Original     		S6302 R1102B PDF