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    SIC MOSFET Search Results

    SIC MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    MG250YD2YMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 2200 V, 250 A, 2-153A1A Visit Toshiba Electronic Devices & Storage Corporation
    TW030Z120C Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET, 1200 V, 60 A, 0.041 Ω@18V, TO-247-4L(X) Visit Toshiba Electronic Devices & Storage Corporation
    TW045Z120C Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET, 1200 V, 40 A, 0.062 Ω@18V, TO-247-4L(X) Visit Toshiba Electronic Devices & Storage Corporation
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    SIC MOSFET Price and Stock

    Infineon Technologies AG SICMOSFET

    SILICON CARBIDE MOSFET KIT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SICMOSFET 9 1
    • 1 $123.88
    • 10 $123.88
    • 100 $123.88
    • 1000 $123.88
    • 10000 $123.88
    		Buy Now

    SIC MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SiC POWER MOSFET

    Abstract: sic MOSFET APTMC60TLM14CAG
    Text: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 14mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode


    Original     		PDF APTMC60TLM14CAG SiC POWER MOSFET sic MOSFET APTMC60TLM14CAG

    Untitled

    Abstract: No abstract text available
    Text: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 13mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode


    Original     		PDF APTMC60TLM14CAG

    Untitled

    Abstract: No abstract text available
    Text: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 13mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode


    Original     		PDF APTMC60TLM14CAG

    Untitled

    Abstract: No abstract text available
    Text: APTMC60TL11CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 98mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •


    Original     		PDF APTMC60TL11CT3AG

    Untitled

    Abstract: No abstract text available
    Text: APTMC60TLM55CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 49mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •


    Original     		PDF APTMC60TLM55CT3AG

    Untitled

    Abstract: No abstract text available
    Text: APTMC60TL11CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 110mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •


    Original     		PDF APTMC60TL11CT3AG

    800V 40A mosfet

    Abstract: mosfet 1200V 40A MOSFET 40A 600V APTMC60TLM55CT3AG
    Text: APTMC60TLM55CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 55mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •


    Original     		PDF APTMC60TLM55CT3AG 800V 40A mosfet mosfet 1200V 40A MOSFET 40A 600V APTMC60TLM55CT3AG

    Untitled

    Abstract: No abstract text available
    Text: APTMC60TLM20CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 20mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •


    Original     		PDF APTMC60TLM20CT3AG

    Untitled

    Abstract: No abstract text available
    Text: APTMC60TLM20CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 17mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •


    Original     		PDF APTMC60TLM20CT3AG

    Untitled

    Abstract: No abstract text available
    Text: Power Modules New Line of SiC-Based Power Modules for Universal Use in Solar and Battery Management Applications Second generation of SiC modules debuts flow 0 SiC Vincotech has rolled out new SiC-based products for ultra efficient, high-frequency operation in solar inverter and battery management


    Original     		PDF frequencie-PZ123BA080ME-M909L18Y Jan-14 12-mm com/M90

    10PZ12B

    Abstract: No abstract text available
    Text: 10-PZ12B2A040MR01-M330L68Y target datasheet flowBOOST 0 SiC 1200V/ 40mΩ Features flowBOOST 0 SiC TM ● Rohm SiC-Power MOSFET´s and Schottky Diodes ● Dual Boost Topology ● Ultra Low Inductance with Integrated DC-capacitors ● Extremely Fast Switching with No "Tail" Current


    Original     		PDF 10-PZ12B2A040MR01-M330L68Y 10PZ12B

    sic mosfet isolated gate driver

    Abstract: TBD0805 CPWR-AN10
    Text: SiC MOSFET Isolated Gate Driver SiC MOSFET Isolated Gate Driver This article describes an implementation of an isolated gate driver suitable for testing and evaluating SiC MOSFETs in a variety of applications. This design replaces previous versions of this application note and include new enhancements. The enhancements are as follows:


    Original     		PDF CPWR-AN10, sic mosfet isolated gate driver TBD0805 CPWR-AN10

    SCS205KG

    Abstract: SCS220KE2 SCS240KE2 SCS212AJ SCS230KE2 SCS210AJ
    Text: SiC Power Devices vol.3 The Industry's First Mass-Produced "Full SiC" Power Modules ROHM now offers SiC power devices featuring a number of characteristics, including: high breakdown voltage, low power consumption, and high-speed switching operation not provided by conventional silicon devices.


    Original     		PDF 000A-class) 56P6733E 1500SG SCS205KG SCS220KE2 SCS240KE2 SCS212AJ SCS230KE2 SCS210AJ

    APT9402

    Abstract: No abstract text available
    Text: TECHNOLOGY Breakthrough High Temperature Electrical Performance of SiC “Super” Junction Transistors SiC are being explored for power electronic conversion applications The SiC based 1200 V/220 mÙ Super Junction Transistors SJTs feature high temperature (> 300 °C) operation capability, faster switching transitions (< 20 ns), extremely


    Original     		PDF com/micnotes/APT9402 APT9402

    Untitled

    Abstract: No abstract text available
    Text: Advantages of SiC Schottky Diodes in Fast Switching Power Electronics Solutions Michael Frisch, Vincotech GmbH, Unterhaching/Germany SiC is discussed as a future high performance replacement of the silicon power components. The new technology enables products with almost ideal behaviour. Currently, SiC Schottky rectifiers are already


    Original     		PDF 25kHz. 50kHz,

    SML25SCM650N2B

    Abstract: No abstract text available
    Text: SiC 650V N-CHANNEL MOSFET SML25SCM650N2B • 650V SiC MOSFET In A Hermetic SMD1 TO-276AB Package • Designed for High Temperature Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VDS VGS ID IDM PD


    Original     		PDF SML25SCM650N2B O-276AB) SML25SCM650N2B

    Untitled

    Abstract: No abstract text available
    Text: 10-PZ123BA080ME-M909L18Y flow 3xBOOST0-SiC 1200V/80mΩ Features flow 0 12mm housing ● SiC-Power MOSFET´s and Schottky Diodes ● 3 channel boost topology ● Ultra Low Inductance with integrated DC-capacitors ● Switching frequency >100kHz ●Temperature sensor


    Original     		PDF 10-PZ123BA080ME-M909L18Y 200V/80mâ 100kHz

    Untitled

    Abstract: No abstract text available
    Text: APTC80AM75SCG Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module OUT Features • - S1 Q2 G2 S2 0/VBUS  Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF


    Original     		PDF APTC80AM75SCG

    Untitled

    Abstract: No abstract text available
    Text: 10-PZ123BA080MR-M909L28Y flow 3xBOOST0-SiC 1200V/80mΩ Features flow 0 12mm housing ● SiC-Power MOSFET´s and Schottky Diodes ● 3 channel boost topology ● Ultra Low Inductance with integrated DC-capacitors ● Switching frequency >100kHz ●Temperature sensor


    Original     		PDF 10-PZ123BA080MR-M909L28Y 200V/80mâ 100kHz

    Untitled

    Abstract: No abstract text available
    Text: APTMC120AM09CT3AG VDSS = 1200V RDSon = 9mΩ max @ Tj = 25°C ID = 295A* @ Tc = 25°C Phase leg SiC MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET


    Original     		PDF APTMC120AM09CT3AG

    100A 1000V mosfet

    Abstract: No abstract text available
    Text: APTMC170AM30CT1AG VDSS = 1700V RDSon = 30mΩ max @ Tj = 25°C ID = 106A @ Tc = 25°C Phase leg SiC MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET


    Original     		PDF APTMC170AM30CT1AG 100A 1000V mosfet

    Untitled

    Abstract: No abstract text available
    Text: APTMC120AM12CT3AG VDSS = 1200V RDSon = 12mΩ max @ Tj = 25°C ID = 220A* @ Tc = 25°C Phase leg SiC MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET


    Original     		PDF APTMC120AM12CT3AG

    Untitled

    Abstract: No abstract text available
    Text: APTMC170AM60CT1AG VDSS = 1700V RDSon = 60mΩ max @ Tj = 25°C ID = 53A @ Tc = 25°C Phase leg SiC MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET


    Original     		PDF APTMC170AM60CT1AG

    Untitled

    Abstract: No abstract text available
    Text: APTMC120AM25CT3AG VDSS = 1200V RDSon = 25mΩ max @ Tj = 25°C ID = 105A @ Tc = 25°C Phase leg SiC MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET


    Original     		PDF APTMC120AM25CT3AG