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    APT9402

    Abstract: amid mosfet amid bipolar transistor tester APT5025BN APT5025BNR apt5025 MOSFET ESD Rated AVALANCHE
    Contextual Info: APPLICATION NOTE APT9402 By: Kenneth Dierberger UNDERSTANDING THE DIFFERENCES BETWEEN STANDARD MOSFETs AND AVALANCHE ENERGY RATED MOSFETs Presented at PCIM ‘94 DALLAS 1 UNDERSTANDING THE DIFFERENCES BETWEEN STANDARD MOSFETS AND AVALANCHE ENERGY RATED MOSFETS


    Original     		APT9402 APT9402 amid mosfet amid bipolar transistor tester APT5025BN APT5025BNR apt5025 MOSFET ESD Rated AVALANCHE PDF

    APT9402

    Contextual Info: TECHNOLOGY Breakthrough High Temperature Electrical Performance of SiC “Super” Junction Transistors SiC are being explored for power electronic conversion applications The SiC based 1200 V/220 mÙ Super Junction Transistors SJTs feature high temperature (> 300 °C) operation capability, faster switching transitions (< 20 ns), extremely


    Original     		com/micnotes/APT9402 APT9402 PDF