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    SIC WAFER Search Results

    SIC WAFER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TRS10E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 10 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TRS6E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 6 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation

    SIC WAFER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CRF24060

    Abstract: CRF24060F C17AH TRANSISTOR SUBSTITUTION TRANSISTOR SUBSTITUTION DATA BOOK CRF-24060 rogers
    Text: CRF24060 60 W, SiC RF Power MESFET Cree’s CRF24060 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher


    Original     		PDF CRF24060 CRF24060 CRF240 CRF24060F C17AH TRANSISTOR SUBSTITUTION TRANSISTOR SUBSTITUTION DATA BOOK CRF-24060 rogers

    SCS205KG

    Abstract: SCS220KE2 SCS240KE2 SCS212AJ SCS230KE2 SCS210AJ
    Text: SiC Power Devices vol.3 The Industry's First Mass-Produced "Full SiC" Power Modules ROHM now offers SiC power devices featuring a number of characteristics, including: high breakdown voltage, low power consumption, and high-speed switching operation not provided by conventional silicon devices.


    Original     		PDF 000A-class) 56P6733E 1500SG SCS205KG SCS220KE2 SCS240KE2 SCS212AJ SCS230KE2 SCS210AJ

    Untitled

    Abstract: No abstract text available
    Text: Advantages of SiC Schottky Diodes in Fast Switching Power Electronics Solutions Michael Frisch, Vincotech GmbH, Unterhaching/Germany SiC is discussed as a future high performance replacement of the silicon power components. The new technology enables products with almost ideal behaviour. Currently, SiC Schottky rectifiers are already


    Original     		PDF 25kHz. 50kHz,

    Infineon power diffusion process

    Abstract: Infineon diffusion solder IDL04G65C5 IPW60R075CP IDL10G65C5 SIC DIODES IDL12G65C5
    Text: Product Brief Features 650V SiC thinQ! Generation 5 diodes Your way is our way: improve efficiency and solution costs ThinQ!™ Generation 5 represents Infineon’s leading edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: MAGX-000025-150000 GaN on SiC HEMT Power Transistor 150 W, 1-2500 MHz Rev. V1 Features •       MAGX-000025-150000 GaN on SiC Transistor Technology Broadband Unmatched Transistor Common-Source Configuration +50 V Typical Operation Class AB Operation


    Original     		PDF MAGX-000025-150000 MAGX-000025-150000 GX0025-150

    Untitled

    Abstract: No abstract text available
    Text: MAGX-001090-600L00 MAGX-001090-600L0S GaN on SiC HEMT Pulsed Power Transistor 600 W Peak, 1030 to 1090 MHz, 32 s Pulse, 2% Duty Features Rev. V5 MAGX-001090-600L00 • GaN on SiC Depletion-Mode Transistor Technology  Internally Matched  Common-Source Configuration


    Original     		PDF MAGX-001090-600L00 MAGX-001090-600L0S MAGX-001090-600L00

    Untitled

    Abstract: No abstract text available
    Text: MAGX-000912-500L00 MAGX-000912-500L0S GaN on SiC HEMT Pulsed Power Transistor 500 W Peak, 960 to 1215 MHz, 128 s Pulse, 10% Duty Features Rev. V5 MAGX-000912-500L00 • GaN on SiC Depletion-Mode Transistor Technology  Internally matched  Common-Source configuration


    Original     		PDF MAGX-000912-500L00 MAGX-000912-500L0S MAGX-000912-500L00

    Untitled

    Abstract: No abstract text available
    Text: MAGX-000035-045000 GaN on SiC HEMT Pulsed Power Transistor 45 W Peak, DC-3500 MHz, 1 ms Pulse, 10% Duty Rev. V1 Features •       MAGX-000035-045000 GaN on SiC Depletion Mode Transistor Common-Source Configuration Broadband Class AB Operation


    Original     		PDF MAGX-000035-045000 DC-3500 MAGX-000035-045000

    Untitled

    Abstract: No abstract text available
    Text: MAGX-001090-600L00 MAGX-001090-600L0S GaN on SiC HEMT Pulsed Power Transistor 600 W Peak, 1030 to 1090 MHz, 32 s Pulse, 2% Duty Features Rev. V3 MAGX-001090-600L00 • GaN on SiC Depletion-Mode Transistor Technology  Internally Matched  Common-Source Configuration


    Original     		PDF MAGX-001090-600L00 MAGX-001090-600L0S MAGX-001090-600L00

    Untitled

    Abstract: No abstract text available
    Text: MAGX-000912-500L00 MAGX-000912-500L0S GaN on SiC HEMT Pulsed Power Transistor 500 W Peak, 960 to 1215 MHz, 128 s Pulse, 10% Duty Features Rev. V3 MAGX-000912-500L00 • GaN on SiC Depletion-Mode Transistor Technology  Internally matched  Common-Source configuration


    Original     		PDF MAGX-000912-500L00 MAGX-000912-500L0S MAGX-000912-500L00

    Untitled

    Abstract: No abstract text available
    Text: MAGX-001214-650L00 GaN on SiC HEMT Pulsed Power Transistor 650 W Peak, 1200-1400 MHz, 300 s Pulse, 10% Duty Features Rev. V1 MAGX-001214-650L00 • GaN on SiC Depletion-Mode Transistor Technology  Internally Matched  Common-Source Configuration  Broadband Class AB Operation


    Original     		PDF MAGX-001214-650L00 MAGX-001214-650L00

    Untitled

    Abstract: No abstract text available
    Text: MAGX-000035-015000 MAGX-000035-01500S GaN on SiC HEMT Pulsed Power Transistor 15 W, DC - 3.5 GHz Rev. V1 Features MAGX-000035-015000 Flanged •    GaN on SiC Depletion Mode Transistor Common-Source Configuration Broadband Class AB Operation


    Original     		PDF MAGX-000035-015000 MAGX-000035-01500S

    Untitled

    Abstract: No abstract text available
    Text: MAGX-001090-600L00 MAGX-001090-600L0S GaN on SiC HEMT Pulsed Power Transistor 600 W Peak, 1030 to 1090 MHz, 32 s Pulse, 2% Duty Features Rev. V4 MAGX-001090-600L00 • GaN on SiC Depletion-Mode Transistor Technology  Internally Matched  Common-Source Configuration


    Original     		PDF MAGX-001090-600L00 MAGX-001090-600L0S MAGX-001090-600L00

    Untitled

    Abstract: No abstract text available
    Text: MAGX-000245-025000 GaN on SiC HEMT Power Transistor 25 W, DC-2.5 GHz, CW Power Rev. V1 Features •       MAGX-000245-025000 GaN on SiC Depletion Mode Transistor Common-Source Configuration Broadband Class AB Operation Thermally Enhanced Cu/Mo/Cu Package


    Original     		PDF MAGX-000245-025000 MAGX-000245-025000

    Untitled

    Abstract: No abstract text available
    Text: MAGX-001214-500L00 MAGX-001214-500L0S GaN on SiC HEMT Pulsed Power Transistor 500W Peak, 1200-1400 MHz, 300 µs Pulse, 10% Duty Rev. V1 Features •       GaN on SiC Depletion-Mode Transistor Technology Internally Matched


    Original     		PDF MAGX-001214-500L00 MAGX-001214-500L0S MAGX-001214-500L00 GX1214-500LS

    Untitled

    Abstract: No abstract text available
    Text: MAGX-003135-120L00 GaN on SiC HEMT Pulsed Power Transistor 120 W Peak, 3.1 to 3.5 GHz, 300 s Pulse, 10% Duty Rev. V2 Features •         GaN on SiC Depletion-Mode HEMT Transistor Common-Source Configuration Broadband Class AB Operation


    Original     		PDF MAGX-003135-120L00 EAR99 MAGX-003135-120L00

    Untitled

    Abstract: No abstract text available
    Text: MAGX-000245-014000 GaN on SiC HEMT Power Transistor 14 W, DC - 2.5 GHz, CW Power Rev. V2 Features •       MAGX-000245-014000 GaN on SiC Depletion Mode Transistor Common-Source Configuration Broadband Class AB Operation


    Original     		PDF MAGX-000245-014000

    IXAN0040

    Abstract: 48V SMPS SiC POWER MOSFET PFC smps design 11N60S5 DGSS10-06CC D-86161 SIC DIODES
    Text: COVER STORY IXAN0040 GaAs and SiC devices will find more and more use The IGBT3 technology which combines the trench cell and the field stop concept is successfully GaAs power devices were mainly used up to 300V, while 600V applications like PFC were regarded to be perfectly served by SiC devices. A new generation of 600V GaAs power


    Original     		PDF IXAN0040 D-10997 IXAN0040 48V SMPS SiC POWER MOSFET PFC smps design 11N60S5 DGSS10-06CC D-86161 SIC DIODES

    Storage of Products Supplied by Infineon Technologies

    Abstract: IEC60721-3-3
    Text: IDC04S60CE 2nd generation thinQ!TM SiC Schottky Diode A Features: Applications: •      Revolutionary Semiconductor Material Silicon Carbide Switching Behaviour Benchmark No Reverse Recovery / No Forward Recovery Temperature Independent Switching


    Original     		PDF IDC04S60CE L4704E, Storage of Products Supplied by Infineon Technologies IEC60721-3-3

    IEC60721-3-3

    Abstract: Storage of Products Supplied by Infineon Technologies sic wafer 100 mm bare die schottky diode IDT05S60
    Text: IDC05S60CE 2nd generation thinQ!TM SiC Schottky Diode A Features: Applications: •      Revolutionary Semiconductor Material Silicon Carbide Switching Behaviour Benchmark No Reverse Recovery / No Forward Recovery Temperature Independent Switching


    Original     		PDF IDC05S60CE L4724E, IEC60721-3-3 Storage of Products Supplied by Infineon Technologies sic wafer 100 mm bare die schottky diode IDT05S60

    IEC60721

    Abstract: IFN 152 IEC60721-3-3 Storage of Products Supplied by Infineon Technologies
    Text: IDC08S60CE 2nd generation thinQ!TM SiC Schottky Diode A Features: Applications: •      Revolutionary Semiconductor Material Silicon Carbide Switching Behaviour Benchmark No Reverse Recovery / No Forward Recovery Temperature Independent Switching


    Original     		PDF IDC08S60CE L4714E, IEC60721 IFN 152 IEC60721-3-3 Storage of Products Supplied by Infineon Technologies

    Untitled

    Abstract: No abstract text available
    Text: Microelectronics Reliability 46 2006 713–730 www.elsevier.com/locate/microrel Introductory Invited Paper Reliability and performance limitations in SiC power devices Ranbir Singh * GeneSiC Semiconductor Inc., 42652 Jolly Lane, South Riding, VA 20152, United States


    Original     		PDF

    MS 1117

    Abstract: IEC60721-3-3 IEC60721 Storage of Products Supplied by Infineon Technologies IDC06S60CE
    Text: IDC06S60CE 2nd generation thinQ!TM SiC Schottky Diode A Features: Applications: •      Revolutionary Semiconductor Material Silicon Carbide Switching Behaviour Benchmark No Reverse Recovery / No Forward Recovery Temperature Independent Switching


    Original     		PDF IDC06S60CE L4734E, MS 1117 IEC60721-3-3 IEC60721 Storage of Products Supplied by Infineon Technologies IDC06S60CE

    Untitled

    Abstract: No abstract text available
    Text: IDC08S60CE 2nd generation thinQ!TM SiC Schottky Diode Features: Applications: • • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior


    Original     		PDF IDC08S60CE