siemens r10 core
Abstract: siemens ferrite n22 p14 CRASTIN CE 7931 Siemens Ferrite n27 RM Siemens Ferrite perminvar Siemens Ferrite n67 RM siemens siferrit al 400 siemens R10 K1 siferrit mt 500 b
Text: SIFERRIT Materials Based on IEC 60401, the data specified here are typical data for the material in question, which have been determined principally on the basis of ring cores. The purpose of such characteristic material data is to provide the user with improved means for
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: V23826-K15-C13/C313 AC/AC TTL 5V/3.3V V23826-K15-C53/C353 DC/DC (5V/3.3V) V23826-K15-C63/C363 AC/AC PECL (5V/3.3V) V23826-K15-C73/C373 AC/DC (5V/3.3V) Single Mode 1300 nm 1.0625 GBd Fibre Channel 1.3 Gigabit Ethernet 1x9 Transceiver Dimensions in (mm) inches
|
Original
|
PDF
|
V23826-K15-C13/C313
V23826-K15-C53/C353
V23826-K15-C63/C363
V23826-K15-C73/C373
D-13623,
de/semiconductor/products/37/376
|
1000BASE-LX
Abstract: No abstract text available
Text: V23826-K15-C13/C313 AC/AC TTL 5V/3.3V V23826-K15-C53/C353 DC/DC (5V/3.3V) V23826-K15-C63/C363 AC/AC PECL (5V/3.3V) V23826-K15-C73/C373 AC/DC (5V/3.3V) Single Mode 1300 nm 1.3 Gigabit Ethernet 1x9 Transceiver Preliminary Dimensions in (mm) inches (8.6 max)
|
Original
|
PDF
|
V23826-K15-C13/C313
V23826-K15-C53/C353
V23826-K15-C63/C363
V23826-K15-C73/C373
D-13623,
de/semiconductor/products/37/376
1000BASE-LX
|
V23809-K15-C310
Abstract: 1000BASE-LX V23809-K15-C10 C311
Text: V23809-K15-C10* * 3.3 V V23809-K15-C310 5V Single Mode 1.3 Gigabit Ethernet 1x9 Transceiver Preliminary Dimensions in mm inches (11.5 max) .453 max. View Z (Lead cross section and standoff size) (7.42–0.15) .292–.006 Optical Centerline (2) .080 (1.5±0.1)
|
Original
|
PDF
|
V23809-K15-C10*
V23809-K15-C310
D-13623,
de/Semiconductor/products/37/376
V23809-K15-C310
1000BASE-LX
V23809-K15-C10
C311
|
N22 Schalenkern
Abstract: Siemens Ferrite N47 Siemens Ferrite B65541 EFD20 trafo ETD54 n62 R6KE Siemens Ferrite B64290 Siemens Ferrite n67 EC70 N27 siferrit n27
Text: Inhaltsverzeichnis Bauformen-Übersicht Bauformnummern-Verzeichnis SIFERRIT-Werkstoffe Seite 5 11 25 31 Allgemeines - Begriffsbestimmungen Anwendungs-, Verarbeitungshinweise Verpackung 103 121 163 Angaben zur Qualität Normen und Vorschriften 177 181 RM-Kerne
|
Original
|
PDF
|
|
Siemens Ferrite B65541
Abstract: TESLA mh 7400 mh 7400 tesla MDT 760 THYRISTOR ARALDITE AY 105 ARALDITE HY 956 EPF S20 Siemens Ferrite B64290 ETD54 n62 ARALDITE D AY 103
Text: Contents Selector Guide Index of Part Numbers 5 11 23 SIFERRIT Materials 29 General – Definitions Application Notes Processing Notes 111 129 151 Packing Quality Considerations Standards and Specifications 165 175 179 RM Cores 183 PM Cores 283 P Cores P Core Halves P Cores for Proximity Switches
|
Original
|
PDF
|
|
PA 6/6 GF30 SIEMENS
Abstract: Siemens Ferrite B65541 ferrite ei core n27 TESLA mh 7400 CRASTIN SO 655 IEC 60205 Luvocom B64290-A38 etd59 siemens Siemens Ferrite B64290
Text: Contents Selector Guide Index of Part Numbers 5 11 26 SIFERRIT Materials 33 General – Definitions Application Notes Processing Notes 111 128 150 Packing Quality Considerations Standards and Specifications 165 174 177 RM Cores PM Cores EP Cores 181 274 290
|
Original
|
PDF
|
|
siemens ferrite n22 p14
Abstract: Siemens Ferrite B65541 EC35 Siemens ferrite core ETD54 n62 U93 QUANTA ARALDITE ay 105 EC70 N27 Siemens Ferrite N47 EC52 N27 FERRITES N67
Text: Contents Page 5 Selector Guide Index of Part Numbers 11 25 SIFERRIT Materials 31 General - Definitions Application and Processing Notes Packing 103 121 163 Quality Considerations Standards and Specifications 177 181 RM Cores 185 PM Cores 287 P Cores P Core Halves P Cores for Proximity Switches
|
Original
|
PDF
|
|
Siemens Ferrite B64290
Abstract: B64290-K38-X830 B64290-K618-X830 B64290K618X830 B64290K618X35 B64290-A38-X1 B64290-A40-X830 siemens b64290 siemens r10 core B64290-K45-X830
Text: Ring Cores General Information ● Our product line includes a wide range of ring cores with finely graded diameters ranging from 2,5 to 200 mm see overview of available types . Other core heights can be supplied on request. All cores are available in the usual materials.
|
Original
|
PDF
|
mT/100
Hz/100
B64290-L84-X87
B64290-L84-X830
B64290-A705-X830
B64290-A711-X830
Siemens Ferrite B64290
B64290-K38-X830
B64290-K618-X830
B64290K618X830
B64290K618X35
B64290-A38-X1
B64290-A40-X830
siemens b64290
siemens r10 core
B64290-K45-X830
|
tda8885h
Abstract: transistor tt 2222 R1005 TO92 SIEMENS R1015 nec c1701 nec c1106 Av r76 mkp tda8885 OV2076 AV R75 MKP
Text: APPLICATION NOTE Hybrid Analogue/DVB TV Receiver IFA1999 Demonstrator: Diagrams, Layouts & BOM AN99062 TP97035.2/F5.5 Philips Semiconductors Hybrid Analogue/DVB TV Receiver IFA1999 Demonstrator: Diagrams, Layouts & BOM Application Note AN99062 Abstract This report is an addition to AN99061 which describes the Hybrid TV receiver in full detaill. The electricall
|
Original
|
PDF
|
IFA1999
AN99062
TP97035
IFA1999
AN99061
BTB1350A-C444
HC49-U13
29MHz
PCS-032SMU-11
tda8885h
transistor tt 2222
R1005 TO92
SIEMENS R1015
nec c1701
nec c1106
Av r76 mkp
tda8885
OV2076
AV R75 MKP
|
siemens r10 core
Abstract: IEC 60205 ferrite eddy current hysteresis loss ferrite core transformer siemens matsua siemens R10 K1 IEC60205
Text: General Definitions 1 Hysteresis The special feature of ferromagnetic and ferrimagnetic materials is that spontaneous magnetization sets in below a material-specific temperature Curie point . The elementary atomic magnets are then aligned in parallel within macroscopic regions. These so-called Weiss’ domains are normally
|
Original
|
PDF
|
|
smd resistor 151
Abstract: 1N4004 smd EXCELSA391 LI 1806 E 151 R ECS-TOJY106R 1N4004DICT-ND P9818BK-ND surface mount opto counter SMD 0805 capacitor zener smd diode 200V 1W
Text: ANALOG DEVICES R1, R2,R3, R4 R5 R6 R7 R8 R9 R10 R11 R12 R13 R14 R15, R16 R17, R23 R18 R19, R20 R21 R22 C1, C2, C3, C4 C5, C13 1kΩ, 1%, 1/8W SMD 1206 Resistor Surface Mount, Panasonic ERJ-8ENF1001 Digi-Key No. P 1K FCT-ND 300kΩ, 5%, ½W, 200V SMD 2010 Resistor Surface Mount,
|
Original
|
PDF
|
ERJ-8ENF1001
ERJ-12ZY304
ERJ-14YJ154
ERJ-8GEYJ753
1/16W,
ERJ-2GEJ393
140Joules
S20K275
ERJ-14RSJ0R1,
smd resistor 151
1N4004 smd
EXCELSA391
LI 1806 E 151 R
ECS-TOJY106R
1N4004DICT-ND
P9818BK-ND
surface mount opto counter
SMD 0805 capacitor
zener smd diode 200V 1W
|
k1206
Abstract: cgs resistor c7 A123 transistor l2 k1206 220 r3
Text: e PTF 10120 120 Watts, 1.8–2.0 GHz LDMOS Field Effect Transistor Description The 10120 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 120 watts minimum
|
Original
|
PDF
|
K1206
G-200,
1-877-GOLDMOS
1301-PTF
k1206
cgs resistor c7
A123
transistor l2
k1206 220 r3
|
k1206
Abstract: G200 LDMOS transistor 1W
Text: PTF 10120 120 Watts, 1.8–2.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10120 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 120 watts power output.
|
Original
|
PDF
|
K1206
1-877-GOLDMOS
1301-PTF
k1206
G200
LDMOS transistor 1W
|
|
|
10125
Abstract: G200 K1206 rf mosfet ericsson
Text: PTF 10125 135 Watts, 1.4–1.6 GHz GOLDMOS Field Effect Transistor Description • The PTF 10125 is an internally matched, common source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications from 1.4 to 1.6 GHz, such as DAB/DRB. It is rated
|
Original
|
PDF
|
K1206
1-877-GOLDMOS
1301-PTF
10125
G200
K1206
rf mosfet ericsson
|
k1206
Abstract: RF Transistor 1500 MHZ
Text: PTF 10125 135 Watts, 1.4–1.6 GHz GOLDMOS Field Effect Transistor Description • The PTF 10125 is an internally matched, common source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications from 1.4 to 1.6 GHz, such as DAB/DRB. Rated output power is 135 watts. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.
|
Original
|
PDF
|
K1206
G-200,
1-877-GOLDMOS
1301-PTF
RF Transistor 1500 MHZ
|
FG0003
Abstract: u2 7805 MOV 103 M 3 KV S20K275 1N4004 smd equivalent ic sec ka 7805 7805 acm IEC-1036 IEC1036 smd r4b
Text: a AN-563 APPLICATION NOTE One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106 • 781/329-4700 • World Wide Web Site: http://www.analog.com A Tamper-Resistant Watt-Hour Energy Meter Based on the AD7751 and Two Current Sensors by Anthony Collins and William Koon
|
Original
|
PDF
|
AN-563
AD7751
AD7751.
AD7751
E01760
FG0003
u2 7805
MOV 103 M 3 KV
S20K275
1N4004 smd equivalent
ic sec ka 7805
7805 acm
IEC-1036
IEC1036
smd r4b
|
4863
Abstract: FAN7527 4863-2 AN-PFC-TDA4863-1 TDA 4863 fan7527 application note TDA 4863 G KA7526 L6561 TDA4863 application note
Text: A p p l i c a t i on N o t e , V 1 . 2, O c t . 20 0 3 TDA 4 863 Getting started with TDA4863 AN-PFC-TDA 4863-2 Author: W. Frank http://www.infineon.com/pfc Power Management & Supply N e v e r s t o p t h i n k i n g . Getting Started with TDA 4863 Revision History:
|
Original
|
PDF
|
TDA4863
MC33262,
MC34262
4863
FAN7527
4863-2
AN-PFC-TDA4863-1
TDA 4863
fan7527 application note
TDA 4863 G
KA7526
L6561
TDA4863 application note
|
under voltage relay lm324 in circuit
Abstract: ac servo amplifier schematic 2n3906 equivalent transistor OPTOCOUPLER IL350 2N3906 Darlington transistor modem hybrid separate transmit TIP330 2n3906 equivalent transistor 600 servo amplifier schematic hybrid 2-4 wire
Text: Optocouplers Isolate Modem Data Access Arrangement Appnote 53 by Bob Krause Lap Top, Palm Top, and Pen Based computer modem manufactures are seeking ways to accommodate the small form factor of the PCMCIA peripheral cards. They are looking for devices to replace the bulky magnetic and electromechanical components normally found in the modem’s telco line interconnection. Modem supplier have found that optocouplers satisfy
|
Original
|
PDF
|
IL350,
IL350
OT223
under voltage relay lm324 in circuit
ac servo amplifier schematic
2n3906 equivalent transistor OPTOCOUPLER
2N3906 Darlington transistor
modem hybrid separate transmit
TIP330
2n3906 equivalent transistor
600 servo amplifier schematic
hybrid 2-4 wire
|
0021L
Abstract: No abstract text available
Text: e PTE 10049* 85 Watts, 470–860 MHz LDMOS Field Effect Transistor Description The 10049 is an internally matched, common source, n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications in the 470 to 860 MHz band. It is rated at 85 watts minimum
|
Original
|
PDF
|
K1206
UT-85-25
0021L
|
capacitor siemens 4700 35
Abstract: L15 800 G200 K1206 PTF10049 SMT 181 resistor SIEMENS B 58 371 470-860 mhz Power amplifier w PTF 10049
Text: PTF 10049 85 Watts, 470–860 MHz GOLDMOS Field Effect Transistor Description The PTF 10049 is an internally matched, common source, N-channel enhancement-mode lateral MOSFET intended for large signal television amplifier applications in the 470 to 860 MHz band. It is rated at 85 watts
|
Original
|
PDF
|
K1206
UT-85-25
1-877-GOLDMOS
1301-PTF
capacitor siemens 4700 35
L15 800
G200
K1206
PTF10049
SMT 181 resistor
SIEMENS B 58 371
470-860 mhz Power amplifier w
PTF 10049
|
Hall Siemens ksy10
Abstract: No abstract text available
Text: SIEMENS Position Hall Sensor KSY10 Features • • • • • High sensitivity High operating temperature range High linearity Low offset voltage Low TC of sensitivity and internal resistance • Plastic-encapsulated miniature package Typical applications
|
OCR Scan
|
PDF
|
KSY10
GPX06787
0HS00101
OHS00103
Hall Siemens ksy10
|
Untitled
Abstract: No abstract text available
Text: SIEMENS V23826-K15-C13/C313 Ac/Acul 5V/3.3V V23826-K15-C53/C353 Dc/Dc(5V/3.3V) V23826-K15-C63/C363 Ac/Ac pec l (5V/3.3V) V23826-K15-C73/C373 AC/DC (5V/3.3V) Single Mode 1300 nm 1.0625 GBd Fibre Channel 1.3 Gigabit Ethernet 1x9 Transceiver Dimensions in (mm) inches
|
OCR Scan
|
PDF
|
V23826-K15-C13/C313
V23826-K15-C53/C353
V23826-K15-C63/C363
V23826-K15-C73/C373
100-SM-LL-l
D-13623,
iconductor/products/37/376
|
1301P
Abstract: K1206 ldmos
Text: ERICSSON PTE 10125* 135 Watts, 1.4-1.6 GHz LDMOS Field Effect Transistor Description The 10125 is an internally m atched, comm on source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications from 1.4 to 1.6 GHz, such as DAB/DAR. Rated output
|
OCR Scan
|
PDF
|
K1206
G-200,
-877-GOLD
1301-PTE
1301P
ldmos
|