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SIGC156T120R2C Price and Stock

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Infineon Technologies AG SIGC156T120R2CSX1S Trans IGBT Chip N-CH 1.2KV DIE - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: SIGC156T120R2CSX1S)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIGC156T120R2CSX1S	Waffle Pack			738	1 - 10 - 100 - 1000 $15.76705 10000 $14.67549	Buy Now
Infineon Technologies AG SIGC156T120R2CSYX1SA1 IGBT CHIPS - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: SIGC156T120R2CSYX1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIGC156T120R2CSYX1SA1	Waffle Pack			25	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG SIGC156T120R2CX1SA4 IGBT CHIPS (Alt: SP000012029)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
EBV Elektronik	SIGC156T120R2CX1SA4			53 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG SIGC156T120R2CLX1SA1 Trans IGBT Chip N-CH 1.2KV DIE (Alt: SP000012033)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
EBV Elektronik	SIGC156T120R2CLX1SA1			53 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Buy Now

SIGC156T120R2C Datasheets (7)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIGC156T120R2C		Infineon Technologies	IGBT Chip in NPT-Technology		Original	PDF
SIGC156T120R2C		Infineon Technologies	SIGC156T120R2C, 1200V, 100A		Original	PDF
SIGC156T120R2CL		Infineon Technologies	IGBT Chip in NPT-Technology		Original	PDF
SIGC156T120R2CL		Infineon Technologies	SIGC156T120R2CL, 1200V, 100A		Original	PDF
SIGC156T120R2CQ		Infineon Technologies	IGBT Chip in Fieldstop-technology		Original	PDF
SIGC156T120R2CS		Infineon Technologies	IGBT Chip in NPT-Technology		Original	PDF
SIGC156T120R2CS		Infineon Technologies	SIGC156T120R2CS, 1200V, 100A		Original	PDF

SIGC156T120R2C Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
a4661 Abstract: BSM100GD120DN2 SIGC156T120R2C Text: Preliminary SIGC156T120R2C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 200µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC156T120R2C 1200V 100A	Original	SIGC156T120R2C SIGC156T120R2C BSM100GD120DN2 Q67041A4661-A003 7181-M, a4661 BSM100GD120DN2	PDF
a4661 Abstract: BSM100GD120DN2 SIGC156T120R2C Text: SIGC156T120R2C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 200µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC156T120R2C 1200V 100A	Original	SIGC156T120R2C SIGC156T120R2C BSM100GD120DN2 Q67041A4661-A003 7181-M, a4661 BSM100GD120DN2	PDF
Untitled Abstract: No abstract text available Text: SIGC156T120R2CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 180µm chip • low turn-off losses • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE This chip is used for: • power module	Original	SIGC156T120R2CL BSM100GD120DLC SIGC156T120R2CL Q67041A4663-A003 7181-P,	PDF
BSM100GD120DLC Abstract: No abstract text available Text: SIGC156T120R2CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 180µm chip • low turn-off losses • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE This chip is used for: • power module	Original	SIGC156T120R2CL BSM100GD120DLC Q67041A4663-A003 SIGC156T120R2CL 7181-P,	PDF
infineon igbt die 1200V Abstract: SIGC156T120R2CS Text: SIGC156T120R2CS IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC156T120R2CS 1200V 100A	Original	SIGC156T120R2CS Q67050A4085-A003 SIGC156T120R2CS 7181-T, infineon igbt die 1200V	PDF
Untitled Abstract: No abstract text available Text: SIGC156T120R2C IGBT Chip in NPT-technology Features: • 1200V NPT technology  low turn-off losses  short tail current  positive temperature coefficient  easy paralleling  integrated gate resistor Chip Type VCE This chip is used for:  power module	Original	SIGC156T120R2C BSM100GD120DN2 SIGC156T120R2C L7181MM,	PDF
Untitled Abstract: No abstract text available Text: SIGC156T120R2C IGBT Chip in NPT-technology Features: • 1200V NPT technology  low turn-off losses  short tail current  positive temperature coefficient  easy paralleling  integrated gate resistor Chip Type VCE This chip is used for:  power module	Original	SIGC156T120R2C BSM100GD120DN2 SIGC156T120R2C L7181MM,	PDF
BSM100GD120DLC Abstract: SIGC156T120R2CL Text: Preliminary SIGC156T120R2CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 180µm chip • low turn-off losses • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE This chip is used for: • power module	Original	SIGC156T120R2CL BSM100GD120DLC SIGC156T120R2CL Q67041A4663-A003 7181-P, BSM100GD120DLC	PDF
SIGC156T120R2CS Abstract: infineon igbt die 1200V Text: Preliminary SIGC156T120R2CS IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC156T120R2CS 1200V 100A	Original	SIGC156T120R2CS SIGC156T120R2CS Q67050A4085-A003 7181-T, infineon igbt die 1200V	PDF
Untitled Abstract: No abstract text available Text: Preliminary SIGC156T120R2CS IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC156T120R2CS 1200V 100A	Original	SIGC156T120R2CS SIGC156T120R2CS Q67050A4085-A003 7181-T,	PDF
a4661 Abstract: An 7181 Text: Preliminary SIGC156T120R2C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 200µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC156T120R2C 1200V 100A	Original	SIGC156T120R2C BSM100GD120DN2 SIGC156T120R2C Q67041sawn A4661-A003 7181-M, a4661 An 7181	PDF
SIGC156T120R2CS Abstract: infineon igbt die 1200V Text: Preliminary SIGC156T120R2CS IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC156T120R2CS 1200V 100A	Original	SIGC156T120R2CS SIGC156T120R2CS Q67050sawn A4085-A003 7181-T, infineon igbt die 1200V	PDF
a4661 Abstract: soft solder die bonding BSM100GD120DN2 igbt "sawn on foil" SIGC156T120R2C Text: SIGC156T120R2C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 200µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC156T120R2C 1200V 100A	Original	SIGC156T120R2C SIGC156T120R2C BSM100GD120DN2 Q67041A4661-A003 7181-M, a4661 soft solder die bonding BSM100GD120DN2 igbt "sawn on foil"	PDF
fs100r12ks4 Abstract: SMPS IC 2003 SIGC156T120R2CS infineon igbt die 1200V Text: SIGC156T120R2CS IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC156T120R2CS 1200V 100A	Original	SIGC156T120R2CS SIGC156T120R2CS Q67050A4085-A003 7181-T, fs100r12ks4 SMPS IC 2003 infineon igbt die 1200V	PDF

BSM100GD120DLC Abstract: SIGC156T120R2CL Text: Preliminary SIGC156T120R2CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 180µm chip • low turn-off losses • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE This chip is used for: • power module	Original	SIGC156T120R2CL BSM100GD120DLC SIGC156T120R2CL Q67041sawn A4663-A003 7181-P, BSM100GD120DLC	PDF
a4661 Abstract: BSM100GD120DN2 SIGC156T120R2C 7181-M Text: Preliminary SIGC156T120R2C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 200µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC156T120R2C 1200V 100A	Original	SIGC156T120R2C SIGC156T120R2C BSM100GD120DN2 Q67041sawn A4661-A003 7181-M, a4661 BSM100GD120DN2 7181-M	PDF
FS100R12KS4 Abstract: No abstract text available Text: SIGC156T120R2CS IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC156T120R2CS 1200V 100A	Original	SIGC156T120R2CS Q67050A4085-A003 SIGC156T120R2CS 7181-T, FS100R12KS4	PDF