SIGE POWER TRANSISTOR Search Results

SIGE POWER TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

SIGE POWER TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: SGA8543Z SGA8543Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Product Description Features RFMD’s SGA8543Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from 50MHzto3.5GHz. The	Original	SGA8543Z SGA8543Z 50MHzto3 SGA8543ZSQ SGA8543ZSR SGA8543Z-EVB1 DS100809	PDF
Untitled Abstract: No abstract text available Text: SGA9089Z SGA9089Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from	Original	SGA9089Z OT-89 SGA9089Z 50MHz 05GHz 44GHz	PDF
Transistor TL 31 AC Abstract: j142 Text: SGA9089Z SGA9089Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from	Original	SGA9089Z OT-89 SGA9089Z 50MHz 44GHz 170mA DS110606 Transistor TL 31 AC j142	PDF
SiGe POWER TRANSISTOR Abstract: Gan hemt transistor RFMD InP HBT transistor low noise Text: SGA9089Z SGA9089Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from	Original	SGA9089Z SGA9089Z OT-89 50MHz 05GHz 44GHz SiGe POWER TRANSISTOR Gan hemt transistor RFMD InP HBT transistor low noise	PDF
SGA8543Z-EVB2 Abstract: marking code 85Z SGA8543ZSQ gm 88 140C rfmd model marking code PHEMT marking code B Transistor code zl HEMT marking P Text: SGA8543Z SGA8543Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Product Description Features RFMD’s SGA8543Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from 50MHzto3.5GHz. The	Original	SGA8543Z SGA8543Z 50MHzto3 SGA8543ZSQ SGA8543ZSR SGA8543Z-EVB1 DS100809 SGA8543Z-EVB2 marking code 85Z SGA8543ZSQ gm 88 140C rfmd model marking code PHEMT marking code B Transistor code zl HEMT marking P	PDF
SGA-9089Z Abstract: InP HBT transistor low noise Text: SGA-9089Z SGA-9089Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA-9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from	Original	SGA-9089Z OT-89 SGA-9089Z 50MHz 170mA EDS-105051 SGA9089Z" InP HBT transistor low noise	PDF
SGA-9089Z Abstract: 105051 Text: SGA-9089Z High IP3, Medium Power Discrete SiGe Transistor SGA-9089Z Preliminary HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR RFMD Green, RoHS Compliant, Pb-Free Package: SOT-89 Product Description Features RFMD’s SGA-9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from	Original	SGA-9089Z OT-89 SGA-9089Z 50MHz 170mA EDS-105051 SGA9089Z" 105051	PDF
140C Abstract: SGA-8543Z marking code 85Z DS1030 HEMT marking P Text: SGA-8543Z High IP3, Medium Power Discrete SiGe Transistor SGA-8543Z Preliminary HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR RFMD Green, RoHS Compliant, Pb-Free Product Description Features RFMD’s SGA-8543Z is a high performance Silicon Germanium Heterostructure	Original	SGA-8543Z SGA-8543Z 50MHzto3 DS103009 140C marking code 85Z DS1030 HEMT marking P	PDF
140C Abstract: SGA-8543Z Text: SGA-8543Z High IP3, Medium Power Discrete SiGe Transistor SGA-8543Z Preliminary HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR RFMD Green, RoHS Compliant, Pb-Free Product Description Features RFMD’s SGA-8543Z is a high performance Silicon Germanium Heterostructure	Original	SGA-8543Z SGA-8543Z 50MHzto3 EDS-102583 140C	PDF
SGA9289Z Abstract: No abstract text available Text: SGA9289Z SGA9289Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9289Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =42.5dBm, and P1dB =27.5dBm. This	Original	SGA9289Z OT-89 SGA9289Z SGA9289Zâ SGA9289ZSQ SGA9289ZSR SGA9289Z-EVB1	PDF
sga9189z Abstract: marking p1z SGA-9189Z marking p1z transistor Text: SGA9189Z SGA9189Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9189Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =39dBm, and P1dB =25.5dBm. This RF	Original	SGA9189Z SGA9189Z OT-89 39dBm, SGA9189Z" SGA9189ZSQ SGA9189ZSR marking p1z SGA-9189Z marking p1z transistor	PDF
Untitled Abstract: No abstract text available Text: SGA9189Z SGA9189Z Medium Power Discrete SiGe Transistor Medium Power Discrete SiGe Transistor Package: SOT-89 Product Description Features RFMD’s SGA9189Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 = 39dBm, and P1dB = 25.5dBm. This	Original	SGA9189Z SGA9189Z OT-89 39dBm, SGA9189ZSQ SGA9189ZSR SGA9189Z-EVB1	PDF
Untitled Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS M3D124 BFU540 NPN SiGe wideband transistor Preliminary specification 2001 July 24 Philips Semiconductors Preliminary specification NPN SiGe wideband transistor BFU540 PINNING FEATURES • Very high power gain PIN • Very low noise figure	Original	M3D124 BFU540 BFU540 MSB842 125104/00/04/pp11	PDF
Untitled Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS M3D124 BFU510 NPN SiGe wideband transistor Preliminary specification 2001 July 24 Philips Semiconductors Preliminary specification NPN SiGe wideband transistor BFU510 PINNING FEATURES • Very high power gain PIN • Very low noise figure	Original	M3D124 BFU510 BFU510 MSB842 125104/00/04/pp11	PDF

4 pin dual-emitter Abstract: BFU540 10GHz oscillator MARKING A4 transistor o-50 RF NPN POWER TRANSISTOR 2.5 GHZ RF TRANSISTOR 10GHZ low noise transistor D 587 Text: DISCRETE SEMICONDUCTORS M3D124 BFU540 NPN SiGe wideband transistor Preliminary specification 2002 Jan 28 Philips Semiconductors Preliminary specification NPN SiGe wideband transistor BFU540 PINNING FEATURES • Very high power gain PIN • Very low noise figure	Original	M3D124 BFU540 SCA73 125104/00/04/pp12 4 pin dual-emitter BFU540 10GHz oscillator MARKING A4 transistor o-50 RF NPN POWER TRANSISTOR 2.5 GHZ RF TRANSISTOR 10GHZ low noise transistor D 587	PDF
Untitled Abstract: No abstract text available Text: SGA9189Z SGA9189Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9189Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =39dBm, and P1dB =25.5dBm. This RF	Original	SGA9189Z OT-89 SGA9189Z 39dBm, SGA9189Zâ SGA9189ZSQ SGA9189ZSR	PDF
SGA9289Z Abstract: MARKING P2Z SGA-9289z SGA9289ZSR rf transistor MARKING CODE 016 marking code of sot89 transistor J4-87 transistor J9 Text: SGA9289Z SGA9289Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9289Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =42.5dBm, and P1dB =27.5dBm. This	Original	SGA9289Z SGA9289Z OT-89 SGA9289Z" SGA9289ZSQ SGA9289ZSR SGA9289Z-EVB1 MARKING P2Z SGA-9289z rf transistor MARKING CODE 016 marking code of sot89 transistor J4-87 transistor J9	PDF
4 pin dual-emitter Abstract: BFU510 RF TRANSISTOR 10GHZ RF TRANSISTOR 10GHZ low noise TRANSISTOR FOR 10GHz oscillator RF NPN power transistor 2.5GHz "MARKING CODE A4" 10GHz oscillator RF NPN POWER TRANSISTOR 2.5 GHZ RF POWER TRANSISTOR NPN Text: DISCRETE SEMICONDUCTORS M3D124 BFU540 NPN SiGe wideband transistor Preliminary specification 2001 Nov 27 Philips Semiconductors Preliminary specification NPN SiGe wideband transistor BFU540 PINNING FEATURES • Very high power gain PIN • Very low noise figure	Original	M3D124 BFU540 SCA73 125104/00/04/pp12 4 pin dual-emitter BFU510 RF TRANSISTOR 10GHZ RF TRANSISTOR 10GHZ low noise TRANSISTOR FOR 10GHz oscillator RF NPN power transistor 2.5GHz "MARKING CODE A4" 10GHz oscillator RF NPN POWER TRANSISTOR 2.5 GHZ RF POWER TRANSISTOR NPN	PDF
SGA9189 Abstract: marking p1z 130C SGA-9189 SGA9189Z trace code marking RFMD SGA-9189Z marking p1z transistor Text: SGA-9189 Z SGA-9189(Z) Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-89 Product Description Features RFMD’s SGA-9189 is a high performance transistor designed for operation to	Original	SGA-9189 OT-89 39dBm, SGA9189Z" SGA9189" SGA-9189Z EDS-101497 SGA9189 marking p1z 130C SGA9189Z trace code marking RFMD SGA-9189Z marking p1z transistor	PDF
MARKING P2Z Abstract: SGA9289 SGA-9289 130C J231 transistor j392 sot89 Text: SGA-9289 Z SGA-9289(Z) Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-89 Product Description Features RFMD’s SGA-9289 is a high performance transistor designed for operation to	Original	SGA-9289 OT-89 SGA9289Z" SGA9289" SGA-9289Z EDS-101498 SGA-9289 MARKING P2Z SGA9289 130C J231 transistor j392 sot89	PDF
transistor gl 1117 Abstract: NEC NESG2101M05 IC 7408 1GP20 NESG2101M05 NESG2101M05-T1 S21E re 10019 Text: NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V Absolute Maximum • HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz • LOW NOISE FIGURE: NF = 0.9 dBm at 2 GHz • HIGH MAXIMUM STABLE POWER GAIN:	Original	NESG2101M05 OT-343 NESG2101M05 461e-12 9e-15 transistor gl 1117 NEC NESG2101M05 IC 7408 1GP20 NESG2101M05-T1 S21E re 10019	PDF
BFU540 Abstract: SiGe POWER TRANSISTOR Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D124 BFU540 NPN SiGe wideband transistor Product specification Supersedes data of 2002 Jan 28 2003 Jun 12 Philips Semiconductors Product specification NPN SiGe wideband transistor BFU540 FEATURES PINNING • Very high power gain	Original	M3D124 BFU540 SCA75 613516/04/pp16 BFU540 SiGe POWER TRANSISTOR	PDF
BFU510 Abstract: SiGe POWER TRANSISTOR Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D124 BFU510 NPN SiGe wideband transistor Product specification Supersedes data of 2001 Nov 08 2003 Jun 12 Philips Semiconductors Product specification NPN SiGe wideband transistor BFU510 FEATURES PINNING • Very high power gain	Original	M3D124 BFU510 SCA75 613516/03/pp16 BFU510 SiGe POWER TRANSISTOR	PDF
BF 3027 Abstract: transistor T1J NESG2101M05-T1-A NESG2101M05 S21E nec 2562 GA1060 14851 mje 2055 1GP20 Text: NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V Absolute Maximum • HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz • LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz • HIGH MAXIMUM STABLE POWER GAIN:	Original	NESG2101M05 OT-343 NESG2101M05 BF 3027 transistor T1J NESG2101M05-T1-A S21E nec 2562 GA1060 14851 mje 2055 1GP20	PDF

SIGE POWER TRANSISTOR Search Results

SIGE POWER TRANSISTOR Result Highlights (5)

SIGE POWER TRANSISTOR Datasheets Context Search

Untitled

Untitled

Transistor TL 31 AC

SiGe POWER TRANSISTOR

SGA8543Z-EVB2

SGA-9089Z

SGA-9089Z

140C

140C

SGA9289Z

sga9189z

Untitled

Untitled

Untitled

4 pin dual-emitter

Untitled

SGA9289Z

4 pin dual-emitter

SGA9189

MARKING P2Z

transistor gl 1117

BFU540

BFU510

BF 3027