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    SIHB8N50D Price and Stock

    Vishay Siliconix SIHB8N50D-GE3

    MOSFET N-CH 500V 8.7A TO263
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    DigiKey SIHB8N50D-GE3 Tube 1,000
    • 1 -
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    • 1000 $0.68116
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    Vishay Intertechnologies SIHB8N50D-GE3

    Transistor: N-MOSFET; unipolar; 500V; 5.5A; Idm: 18A; 156W
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    TME SIHB8N50D-GE3 1
    • 1 $1.33
    • 10 $1.2
    • 100 $0.95
    • 1000 $0.88
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    SIHB8N50D Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIHB8N50D-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 8.7A D2PAK Original PDF

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    Text: SiHB8N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 550 VGS = 10 V 0.85 Qg (max.) (nC)


    Original     		PDF SiHB8N50D O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12