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    SIHD6N62E Search Results

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    SIHD6N62E Price and Stock

    Vishay Siliconix SIHD6N62E-GE3

    MOSFET N-CH 620V 6A DPAK
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    DigiKey SIHD6N62E-GE3 Tube 3,000
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    Vishay Siliconix SIHD6N62ET1-GE3

    MOSFET N-CH 620V 6A TO252AA
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    DigiKey SIHD6N62ET1-GE3 Reel 2,000
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    SIHD6N62ET1-GE3 Digi-Reel 1
    • 1 $2.17
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    SIHD6N62ET1-GE3 Cut Tape 1
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    Vishay Intertechnologies SIHD6N62E-GE3

    N-CHANNEL 620V - Tape and Reel (Alt: SIHD6N62E-GE3)
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    Avnet Americas SIHD6N62E-GE3 Reel 18 Weeks 3,000
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    Mouser Electronics SIHD6N62E-GE3 2,920
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    TTI SIHD6N62E-GE3 Tube 3,000
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    TME SIHD6N62E-GE3 1
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    EBV Elektronik SIHD6N62E-GE3 19 Weeks 75
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    Vishay Intertechnologies SIHD6N62ET1-GE3

    N-CHANNEL 620V - Tape and Reel (Alt: SIHD6N62ET1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIHD6N62ET1-GE3 Reel 18 Weeks 2,000
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    Mouser Electronics SIHD6N62ET1-GE3
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    Bristol Electronics SIHD6N62ET1-GE3 1,889
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    Quest Components SIHD6N62ET1-GE3 1,511
    • 1 $2.356
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    TTI SIHD6N62ET1-GE3 Reel 2,000
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    SIHD6N62E Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIHD6N62E-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 620V 6A TO-252 Original PDF
    SIHD6N62ET1-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 620V 6A TO252AA Original PDF

    SIHD6N62E Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHD6N62E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) • • • • • 0.9 34 Qgs (nC) 4 Qgd (nC) 8 Configuration


    Original     		SiHD6N62E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHD6N62E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) • • • • • 0.9 34 Qgs (nC) 4 Qgd (nC) 8 Configuration


    Original     		SiHD6N62E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHD6N62E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) • • • • • 0.9 34 Qgs (nC) 4 Qgd (nC) 8 Configuration


    Original     		SiHD6N62E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHD6N62E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		SiHD6N62E AN609, 5255m 3372m 3280m 6452m 16-Apr-13 PDF