IRFBG20
Abstract: 81262
Text: IRFBG20, SiHFBG20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 1000 RDS(on) (Ω) VGS = 10 V 11 Qg (Max.) (nC) 38 Qgs (nC) 4.9 Qgd (nC) 22 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-220 Third generation Power MOSFETs from Vishay provide the
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Original
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IRFBG20,
SiHFBG20
O-220
O-220
18-Jul-08
IRFBG20
81262
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PDF
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IRFBG20
Abstract: No abstract text available
Text: IRFBG20,SiHFBG20_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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IRFBG20
SiHFBG20
AN609,
7079m
5892m
5090m
8530m
9441m
7634m
1217u
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFBG20, SiHFBG20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 1000 RDS(on) () VGS = 10 V 11 Qg (Max.) (nC) 38 Qgs (nC) 4.9 Qgd (nC) 22 Configuration Single COMPLIANT Third generation Power MOSFETs from Vishay provide the
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Original
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IRFBG20,
SiHFBG20
O-220AB
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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IRFBG20
Abstract: No abstract text available
Text: IRFBG20, SiHFBG20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 1000 RDS(on) (Ω) VGS = 10 V 11 Qg (Max.) (nC) 38 Qgs (nC) 4.9 Qgd (nC) 22 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-220 Third generation Power MOSFETs from Vishay provide the
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Original
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IRFBG20,
SiHFBG20
O-220
12-Mar-07
IRFBG20
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFBG20, SiHFBG20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 1000 RDS(on) () VGS = 10 V 11 Qg (Max.) (nC) 38 Qgs (nC) 4.9 Qgd (nC) 22 Configuration Single COMPLIANT Third generation Power MOSFETs from Vishay provide the
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Original
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IRFBG20,
SiHFBG20
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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IRFBG20
Abstract: No abstract text available
Text: IRFBG20, SiHFBG20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 1000 RDS(on) () VGS = 10 V 11 Qg (Max.) (nC) 38 Qgs (nC) 4.9 Qgd (nC) 22 Configuration Single COMPLIANT Third generation Power MOSFETs from Vishay provide the
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Original
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IRFBG20,
SiHFBG20
O-220AB
O-220AB
11-Mar-11
IRFBG20
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFBG20, SiHFBG20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 1000 RDS(on) () VGS = 10 V 11 Qg (Max.) (nC) 38 Qgs (nC) 4.9 Qgd (nC) 22 Configuration Single COMPLIANT Third generation Power MOSFETs from Vishay provide the
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Original
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IRFBG20,
SiHFBG20
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFBG20, SiHFBG20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 1000 RDS(on) () VGS = 10 V 11 Qg (Max.) (nC) 38 Qgs (nC) 4.9 Qgd (nC) 22 Configuration Single COMPLIANT Third generation Power MOSFETs from Vishay provide the
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Original
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IRFBG20,
SiHFBG20
O-220AB
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFBG20, SiHFBG20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 1000 RDS(on) () VGS = 10 V 11 Qg (Max.) (nC) 38 Qgs (nC) 4.9 Qgd (nC) 22 Configuration Single COMPLIANT Third generation Power MOSFETs from Vishay provide the
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Original
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IRFBG20,
SiHFBG20
O-220AB
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFBG20, SiHFBG20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 1000 RDS(on) () VGS = 10 V 11 Qg (Max.) (nC) 38 Qgs (nC) 4.9 Qgd (nC) 22 Configuration Single COMPLIANT Third generation Power MOSFETs from Vishay provide the
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Original
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IRFBG20,
SiHFBG20
O-220AB
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFBG20, SiHFBG20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 1000 RDS(on) () VGS = 10 V 11 Qg (Max.) (nC) 38 Qgs (nC) 4.9 Qgd (nC) 22 Configuration Single COMPLIANT Third generation Power MOSFETs from Vishay provide the
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Original
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IRFBG20,
SiHFBG20
2002/95/EC
O-220AB
11-Mar-11
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PDF
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