SiHFD9010
Abstract: No abstract text available
Text: IRFD9010, SiHFD9010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 50 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 11 Qgs (nC) 3.8 Qgd (nC) 4.1 Configuration Single For Automatic Insertion Compact, End Stackable
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PDF
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IRFD9010,
SiHFD9010
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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diode 7449
Abstract: AN609 IRFD9010 SiHFD9010
Text: IRFD9010_RC, SiHFD9010_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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IRFD9010
SiHFD9010
AN609,
3823m
7939m
2852m
2261m
26-Oct-10
diode 7449
AN609
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IRFD9010
Abstract: IRFD9010PBF SiHFD9010
Text: IRFD9010, SiHFD9010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 50 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 11 Qgs (nC) 3.8 Qgd (nC) 4.1 Configuration Single For Automatic Insertion Compact, End Stackable
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Original
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PDF
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IRFD9010,
SiHFD9010
2002/95/EC
18-Jul-08
IRFD9010
IRFD9010PBF
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SiHFD9010
Abstract: No abstract text available
Text: IRFD9010, SiHFD9010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 50 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 11 Qgs (nC) 3.8 Qgd (nC) 4.1 Configuration Single For Automatic Insertion Compact, End Stackable
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Original
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PDF
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IRFD9010,
SiHFD9010
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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IRFD9010
Abstract: SiHFD9010
Text: IRFD9010, SiHFD9010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 50 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 11 Qgs (nC) 3.8 Qgd (nC) 4.1 Configuration Single For Automatic Insertion Compact, End Stackable
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Original
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PDF
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IRFD9010,
SiHFD9010
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRFD9010
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IRFD9010
Abstract: SiHFD9010
Text: IRFD9010, SiHFD9010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 50 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 11 Qgs (nC) 3.8 Qgd (nC) 4.1 Configuration Single For Automatic Insertion Compact, End Stackable
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Original
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PDF
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IRFD9010,
SiHFD9010
2002/95/EC
11-Mar-11
IRFD9010
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