IRFI644G
Abstract: SiHFI644G SiHFI644G-E3 S-81290-Rev
Text: IRFI644G, SiHFI644G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance
|
Original
|
PDF
|
IRFI644G,
SiHFI644G
O-220
11-Mar-11
IRFI644G
SiHFI644G-E3
S-81290-Rev
|
SiHFI644G
Abstract: IRFI644G
Text: IRFI644G, SiHFI644G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance
|
Original
|
PDF
|
IRFI644G,
SiHFI644G
O-220
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRFI644G
|
IRFI644
Abstract: AN609 IRFI644G SiHFI644G
Text: IRFI644G_RC, SiHFI644G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
|
Original
|
PDF
|
IRFI644G
SiHFI644G
AN609,
06-May-10
IRFI644
AN609
|
IRFI644G
Abstract: No abstract text available
Text: IRFI644G, SiHFI644G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance
|
Original
|
PDF
|
IRFI644G,
SiHFI644G
O-220
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRFI644G
|
IRFI644G
Abstract: SiHFI644G SiHFI644G-E3
Text: IRFI644G, SiHFI644G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance
|
Original
|
PDF
|
IRFI644G,
SiHFI644G
O-220
18-Jul-08
IRFI644G
SiHFI644G-E3
|
IRFI644G
Abstract: No abstract text available
Text: IRFI644G, SiHFI644G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance
|
Original
|
PDF
|
IRFI644G,
SiHFI644G
O-220
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
IRFI644G
|
IRFI644G
Abstract: SiHFI644G
Text: IRFI644G, SiHFI644G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance
|
Original
|
PDF
|
IRFI644G,
SiHFI644G
O-220
12-Mar-07
IRFI644G
|