IRFI9Z34G
Abstract: SiHFI9Z34G SiHFI9Z34G-E3
Text: IRFI9Z34G, SiHFI9Z34G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature
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IRFI9Z34G,
SiHFI9Z34G
O-220
18-Jul-08
IRFI9Z34G
SiHFI9Z34G-E3
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Untitled
Abstract: No abstract text available
Text: IRFI9Z34G, SiHFI9Z34G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature
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PDF
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IRFI9Z34G,
SiHFI9Z34G
O-220
12-Mar-07
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irfi9z34
Abstract: No abstract text available
Text: IRFI9Z34G_RC, SiHFI9Z34G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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IRFI9Z34G
SiHFI9Z34G
AN609,
19-May-10
irfi9z34
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Untitled
Abstract: No abstract text available
Text: IRFI9Z34G, SiHFI9Z34G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature
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Original
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PDF
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IRFI9Z34G,
SiHFI9Z34G
O-220
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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IRFI9Z34G equivalent
Abstract: IRFI9Z34G SiHFI9Z34G-E3 SiHFI9Z34G irfi9z34
Text: IRFI9Z34G, SiHFI9Z34G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature
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Original
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PDF
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IRFI9Z34G,
SiHFI9Z34G
O-220
18-Jul-08
IRFI9Z34G equivalent
IRFI9Z34G
SiHFI9Z34G-E3
irfi9z34
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Untitled
Abstract: No abstract text available
Text: IRFI9Z34G, SiHFI9Z34G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature
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Original
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PDF
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IRFI9Z34G,
SiHFI9Z34G
O-220
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: IRFI9Z34G, SiHFI9Z34G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature
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Original
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PDF
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IRFI9Z34G,
SiHFI9Z34G
O-220
11-Mar-11
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irfi9z34g
Abstract: No abstract text available
Text: IRFI9Z34G, SiHFI9Z34G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature
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Original
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PDF
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IRFI9Z34G,
SiHFI9Z34G
O-220
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
irfi9z34g
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Untitled
Abstract: No abstract text available
Text: Vishay Intertechnology, Inc. Consumer Home Appliances One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Consumer 家庭用電化製品 エアコン 4 IH調理器 5 洗濯機 6 The Engineer’s Toolbox highlights, by market application, some innovative components Vishay
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VMN-MS6792-1304-CNCH
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Untitled
Abstract: No abstract text available
Text: Vishay Intertechnology, Inc. Consumer Home Appliances One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Consumer Home Appliances Air Conditioners Induction Cooking Washing Machines 4 5 6 The Engineer’s Toolbox highlights, by market application, some innovative components Vishay
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VMN-MS6761-1212
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