Untitled
Abstract: No abstract text available
Text: IRFP244_RC, SiHFP244_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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IRFP244
SiHFP244
AN609,
08-Jun-10
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IRFP244
Abstract: No abstract text available
Text: IRFP244, SiHFP244 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 Qgs (nC) 12 Qgd (nC) 39 Configuration • Repetitive Avalanche Rated 0.28 • Simple Drive Requirements
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IRFP244,
SiHFP244
O-247
O-220
O-218
18-Jul-08
IRFP244
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Untitled
Abstract: No abstract text available
Text: IRFP244, SiHFP244 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 Qgs (nC) 12 Qgd (nC) 39 Configuration • Repetitive Avalanche Rated 0.28 • Simple Drive Requirements
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IRFP244,
SiHFP244
O-247
O-220
12-Mar-07
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Untitled
Abstract: No abstract text available
Text: IRFP244, SiHFP244 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V Qg (Max.) (nC) • Isolated Central Mounting Hole 63 Qgs (nC) 12 Qgd (nC) 39 Configuration Available • Repetitive Avalanche Rated
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IRFP244,
SiHFP244
2002/95/EC
O-247AC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: IRFP244, SiHFP244 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V Qg (Max.) (nC) • Isolated Central Mounting Hole 63 Qgs (nC) 12 Qgd (nC) 39 Configuration Available • Repetitive Avalanche Rated
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Original
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PDF
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IRFP244,
SiHFP244
2002/95/EC
O-247AC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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IRFP244
Abstract: No abstract text available
Text: IRFP244, SiHFP244 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 Qgs (nC) 12 Qgd (nC) 39 Configuration • Repetitive Avalanche Rated 0.28 • Simple Drive Requirements
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Original
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PDF
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IRFP244,
SiHFP244
O-247
O-220
O-218
18-Jul-08
IRFP244
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Untitled
Abstract: No abstract text available
Text: IRFP244, SiHFP244 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V Qg (Max.) (nC) • Isolated Central Mounting Hole 63 Qgs (nC) 12 Qgd (nC) 39 Configuration Available • Repetitive Avalanche Rated
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Original
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PDF
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IRFP244,
SiHFP244
2002/95/EC
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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IRFP244
Abstract: No abstract text available
Text: IRFP244, SiHFP244 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V Qg (Max.) (nC) • Isolated Central Mounting Hole 63 Qgs (nC) 12 Qgd (nC) 39 Configuration Available • Repetitive Avalanche Rated
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Original
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PDF
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IRFP244,
SiHFP244
2002/95/EC
O-247AC
O-220AB
11-Mar-11
IRFP244
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Untitled
Abstract: No abstract text available
Text: IRFP244, SiHFP244 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V Qg (Max.) (nC) • Isolated Central Mounting Hole 63 Qgs (nC) 12 Qgd (nC) 39 Configuration Available • Repetitive Avalanche Rated
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Original
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PDF
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IRFP244,
SiHFP244
2002/95/EC
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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