Untitled
Abstract: No abstract text available
Text: IRFPG50, SiHFPG50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 1000 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 2.0 190 • Isolated Central Mounting Hole Qgs (nC) 23 • Fast Switching Qgd (nC) 110 • Ease of Paralleling
|
Original
|
IRFPG50,
SiHFPG50
2002/95/EC
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
PDF
|
IRFPG50
Abstract: SiHFPG50
Text: IRFPG50, SiHFPG50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 1000 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 2.0 Qg (Max.) (nC) 190 • Isolated Central Mounting Hole Qgs (nC) 23 • Fast Switching 110
|
Original
|
IRFPG50,
SiHFPG50
O-247
O-247
18-Jul-08
IRFPG50
|
PDF
|
irfpg
Abstract: No abstract text available
Text: IRFPG50, SiHFPG50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 1000 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 2.0 190 • Isolated Central Mounting Hole Qgs (nC) 23 • Fast Switching Qgd (nC) 110 • Ease of Paralleling
|
Original
|
IRFPG50,
SiHFPG50
2002/95/EC
O-247AC
O-247AC
O-220Atrademarks
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
irfpg
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRFPG50_RC, SiHFPG50_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
|
Original
|
IRFPG50
SiHFPG50
AN609,
09-Jul-10
|
PDF
|
IRFPG50PBF
Abstract: No abstract text available
Text: IRFPG50, SiHFPG50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 1000 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 2.0 190 • Isolated Central Mounting Hole Qgs (nC) 23 • Fast Switching Qgd (nC) 110 • Ease of Paralleling
|
Original
|
IRFPG50,
SiHFPG50
2002/95/EC
O-247AC
O-247AC
O-220Atrademarks
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
IRFPG50PBF
|
PDF
|
IRFPG50
Abstract: SiHFPG50
Text: IRFPG50, SiHFPG50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 1000 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 2.0 190 • Isolated Central Mounting Hole Qgs (nC) 23 • Fast Switching Qgd (nC) 110 • Ease of Paralleling
|
Original
|
IRFPG50,
SiHFPG50
2002/95/EC
O-247AC
11-Mar-11
IRFPG50
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRFPG50, SiHFPG50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 1000 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 2.0 190 • Isolated Central Mounting Hole Qgs (nC) 23 • Fast Switching Qgd (nC) 110 • Ease of Paralleling
|
Original
|
IRFPG50,
SiHFPG50
2002/95/EC
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRFPG50, SiHFPG50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 1000 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 2.0 190 • Isolated Central Mounting Hole Qgs (nC) 23 • Fast Switching Qgd (nC) 110 • Ease of Paralleling
|
Original
|
IRFPG50,
SiHFPG50
2002/95/EC
O-247AC
O-247AC
O-220Ahay
11-Mar-11
|
PDF
|
dv/LS7060/61
Abstract: No abstract text available
Text: IRFPG50, SiHFPG50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 1000 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 2.0 Qg (Max.) (nC) 190 • Isolated Central Mounting Hole Qgs (nC) 23 • Fast Switching 110
|
Original
|
IRFPG50,
SiHFPG50
O-247
O-247
12-Mar-07
dv/LS7060/61
|
PDF
|