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    SIHG64N65E Price and Stock

    Vishay Siliconix SIHG64N65E-GE3

    MOSFET N-CH 650V 64A TO247AC
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    DigiKey SIHG64N65E-GE3 Tube 495 1
    • 1 $12.82
    • 10 $9.345
    • 100 $12.82
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    Bristol Electronics SIHG64N65E-GE3 175
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    SIHG64N65E-GE3 25 1
    • 1 $9
    • 10 $6.75
    • 100 $6.075
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    Quest Components SIHG64N65E-GE3 140
    • 1 $16.2
    • 10 $16.2
    • 100 $12.6
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    SIHG64N65E-GE3 20
    • 1 $12
    • 10 $9
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    Vishay Intertechnologies SIHG64N65E-GE3

    Trans MOSFET N-CH 650V 64A 3-Pin TO-247AC - Bulk (Alt: SIHG64N65E-GE3)
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    Avnet Americas SIHG64N65E-GE3 Bulk 18 Weeks 500
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    Mouser Electronics SIHG64N65E-GE3 395
    • 1 $12.83
    • 10 $11.31
    • 100 $9.7
    • 1000 $8.86
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    Newark SIHG64N65E-GE3 Bulk 1
    • 1 $14.06
    • 10 $12.54
    • 100 $10.96
    • 1000 $10.7
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    TTI SIHG64N65E-GE3 Tube 375 25
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    • 100 $9.61
    • 1000 $8.13
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    TME SIHG64N65E-GE3 1
    • 1 $12.42
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    • 100 $9.75
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    EBV Elektronik SIHG64N65E-GE3 19 Weeks 25
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    SIHG64N65E Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIHG64N65E-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 64A TO247AC Original PDF

    SIHG64N65E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SiHG64N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V • Low Input Capacitance (Ciss) 0.047 Qg max. (nC) 369 • Reduced Switching and Conduction Losses


    Original     		PDF SiHG64N65E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHG64N65E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SiHG64N65E AN609, 2725m 2268m 9394m 1714m 06-May-14

    91566

    Abstract: No abstract text available
    Text: SiHG64N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C (Ω) VGS = 10 V • Low input capacitance (Ciss) 0.047 Qg max. (nC) 369 • Reduced switching and conduction losses


    Original     		PDF SiHG64N65E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 91566

    AN844

    Abstract: No abstract text available
    Text: VISHAY SILICONIX www.vishay.com Power MOSFETs Application Note - AN844 How to Select the Right MOSFET for Power Factor Correction Applications Power factor is the ratio of the real power P = Watts to the apparent power (VA = Volt Ampere); the goal is to achieve a power


    Original     		PDF AN844 SiHx15N65E SiHx22N65E SiHx24N65E SiHx5N50D SiHx8N50D SiHx3N50D SiHx12N50C AN844