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    Vishay Siliconix SIHL620STRL-GE3

    LOGIC MOSFET N-CHANNEL 200V
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    DigiKey SIHL620STRL-GE3 Digi-Reel 776 1
    • 1 $1.41
    • 10 $0.892
    • 100 $1.41
    • 1000 $1.41
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    SIHL620STRL-GE3 Cut Tape 776 1
    • 1 $1.41
    • 10 $0.892
    • 100 $1.41
    • 1000 $1.41
    • 10000 $1.41
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    SIHL620STRL-GE3 Reel 800
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    • 1000 $0.43369
    • 10000 $0.33218
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    Vishay Siliconix SIHL620S-GE3

    LOGIC MOSFET N-CHANNEL 200V
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    DigiKey SIHL620S-GE3 Tube 686 1
    • 1 $1.41
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    • 1000 $0.4626
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    Vishay Intertechnologies SIHL620S-GE3

    Logic Mosfet N-Channel 200V |Vishay SIHL620S-GE3
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    Newark SIHL620S-GE3 Bulk 1,000
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    TTI SIHL620S-GE3 Bulk 1,000
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    • 1000 $0.347
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    TME SIHL620S-GE3 1
    • 1 $0.93
    • 10 $0.84
    • 100 $0.67
    • 1000 $0.63
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    Vishay Intertechnologies SIHL620STRL-GE3

    Logic Mosfet N-Channel 200V |Vishay SIHL620STRL-GE3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SIHL620STRL-GE3 Bulk 800
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    TTI SIHL620STRL-GE3 Reel 800
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    SIHL620 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IRL620

    Abstract: SiHL620 SiHL620-E3 IRL620PBF
    Text: IRL620, SiHL620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 2.7 Qgd (nC) 9.6 Configuration RoHS* • Logic-Level Gate Drive 16 Qgs (nC) Available • Repetitive Avalanche Rated


    Original     		IRL620, SiHL620 2002/95/EC O-220AB O-220AB 11-Mar-11 IRL620 SiHL620-E3 IRL620PBF PDF

    SiHL620

    Abstract: SiHL620-E3 IRL620PBF IRL620
    Text: IRL620, SiHL620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 16 Qgs (nC) 2.7 Qgd (nC) 9.6 Configuration • Repetitive Avalanche Rated 0.80 Available • Logic-Level Gate Drive


    Original     		IRL620, SiHL620 O-220 O-220 18-Jul-08 SiHL620-E3 IRL620PBF IRL620 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRL620, SiHL620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 2.7 Qgd (nC) 9.6 Configuration RoHS* • Logic-Level Gate Drive 16 Qgs (nC) Available • Repetitive Avalanche Rated


    Original     		IRL620, SiHL620 2002/95/EC O-220AB O-220AB 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRL620S, SiHL620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.80 16 Qgs (nC) 2.9 Qgd (nC) 9.6 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		IRL620S, SiHL620S O-263) 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRL620S, SiHL620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.80 16 Qgs (nC) 2.9 Qgd (nC) 9.6 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		IRL620S, SiHL620S 2002/95/EC O-263) 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRL620S, SiHL620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.80 16 Qgs (nC) 2.9 Qgd (nC) 9.6 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		IRL620S, SiHL620S 2002/95/EC O-263) 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRL620S, SiHL620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.80 16 Qgs (nC) 2.9 Qgd (nC) 9.6 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		IRL620S, SiHL620S 2002/95/EC O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRL620, SiHL620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 2.7 Qgd (nC) 9.6 Configuration RoHS* • Logic-Level Gate Drive 16 Qgs (nC) Available • Repetitive Avalanche Rated


    Original     		IRL620, SiHL620 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    AN609

    Abstract: IRL620 SiHL620 308-196
    Text: IRL620_RC, SiHL620_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		IRL620 SiHL620 AN609, 5620m 0814m 9024m 5573m 5593m 9530m 2863m AN609 308-196 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRL620, SiHL620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 16 Qgs (nC) 2.7 Qgd (nC) 9.6 Configuration • Repetitive Avalanche Rated 0.80 Available • Logic-Level Gate Drive


    Original     		IRL620, SiHL620 O-220 O-220 12-Mar-07 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRL620S, SiHL620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.80 16 Qgs (nC) 2.9 Qgd (nC) 9.6 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		IRL620S, SiHL620S 2002/95/EC O-263) 11-Mar-11 PDF

    SiHL620S

    Abstract: 52a21
    Text: IRL620S, SiHL620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.80 16 Qgs (nC) 2.9 Qgd (nC) 9.6 Configuration Single • • • • • • Surface Mount Available in Tape and Reel Dynamic dV/dt Rating


    Original     		IRL620S, SiHL620S SMD-220 12-Mar-07 52a21 PDF

    SiHL620S

    Abstract: IRL620S SiHL620S-E3
    Text: IRL620S, SiHL620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.80 16 Qgs (nC) 2.9 Qgd (nC) 9.6 Configuration Single D D2PAK (TO-263) • • • • • • • • Surface Mount Available in Tape and Reel


    Original     		IRL620S, SiHL620S O-263) 18-Jul-08 IRL620S SiHL620S-E3 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRL620S_RC, SiHL620S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		IRL620S SiHL620S AN609, CONFIGURAp-10 5704m 0740m 9202m 5574m PDF

    IRL620PBF

    Abstract: 52A21
    Text: IRL620, SiHL620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 2.7 Qgd (nC) 9.6 Configuration RoHS* • Logic-Level Gate Drive 16 Qgs (nC) Available • Repetitive Avalanche Rated


    Original     		IRL620, SiHL620 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRL620PBF 52A21 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRL620, SiHL620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 2.7 Qgd (nC) 9.6 Configuration RoHS* • Logic-Level Gate Drive 16 Qgs (nC) Available • Repetitive Avalanche Rated


    Original     		IRL620, SiHL620 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    SiHL620S

    Abstract: IRL620S SiH530S-E3 SiH530STR SMD-220 IRL530STRR SMD DIODE marking AB
    Text: IRL620S, SiHL620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.80 16 Qgs (nC) 2.9 Qgd (nC) 9.6 Configuration Single • • • • • • Surface Mount Available in Tape and Reel Dynamic dV/dt Rating


    Original     		IRL620S, SiHL620S SMD-220 SMD-220 18-Jul-08 IRL620S SiH530S-E3 SiH530STR IRL530STRR SMD DIODE marking AB PDF

    SiHL620-E3

    Abstract: No abstract text available
    Text: IRL620, SiHL620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 2.7 Qgd (nC) 9.6 Configuration RoHS* • Logic-Level Gate Drive 16 Qgs (nC) Available • Repetitive Avalanche Rated


    Original     		IRL620, SiHL620 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SiHL620-E3 PDF

    part marking ab

    Abstract: IRL620 SiHL620 SiHL620-E3 D3118
    Text: IRL620, SiHL620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 16 Qgs (nC) 2.7 Qgd (nC) 9.6 Configuration • Repetitive Avalanche Rated 0.80 Available • Logic-Level Gate Drive


    Original     		IRL620, SiHL620 O-220 O-220 18-Jul-08 part marking ab IRL620 SiHL620-E3 D3118 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRL620, SiHL620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 5.0 V Qg (Max.) (nC) 16 Qgs (nC) 2.7 Qgd (nC) 9.6 Configuration • Repetitive Avalanche Rated 0.80 Available • Logic-Level Gate Drive


    Original     		IRL620, SiHL620 2002/95/EC O-220 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRL620, SiHL620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 2.7 Qgd (nC) 9.6 Configuration RoHS* • Logic-Level Gate Drive 16 Qgs (nC) Available • Repetitive Avalanche Rated


    Original     		IRL620, SiHL620 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF