2N6387
Abstract: 2N6388
Text: 2N6387 2N6388 SILICO NPN POWER DARLINGTON TRANSISTORS n 2N6388 IS SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The 2N6387 and 2N6388 are silicon epitaxial-base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-220 plastic package.
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2N6387
2N6388
2N6388
2N6387
O-220
O-220
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JE172
Abstract: JE182 JE170 je171 JE180 MJE170 motorola MJE180 MOTOROLA JE181 mj317 MJ31-7
Text: M O T O R C L A SC l^ E D I XSTRS/R F t3b?aS4 0005307 7 | r -3 3 -t f Ÿ PNP r» -3 3 -¡7 MOTOROLA MJE170 thru MJE172 SEMICONDUCTOR NPN TECHNICAL DATA MJE180 thru MJE182 COM PLEMENTARY PLASTIC SILICO N POWER TRANSISTORS 3 AMPERE POWER TRANSISTORS COM PLEMENTARY SILICO N
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MJE170
MJE172
MJE180
MJE182
MJE170,
MJE180
MJE171,
MJE181
MJE172,
JE172
JE182
JE170
je171
JE180
MJE170 motorola
MJE180 MOTOROLA
JE181
mj317
MJ31-7
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LT 5337
Abstract: 2N5339 2N6193, Motorola LN 7904 2N5336 2n5337 2n5338 NS338
Text: MOTOROL A SC XSTR S/ R F 1 3 E D I b3b?254 0004542 1 | 2N5336 MOTOROLA SEMICONDUCTOR thru TECHNICAL DATA 2N5339 MEDIUM-POWER NPN SILICO N TRAN SISTO RS 5 AM PERE POWER TRAN SISTORS NPN SILICO N . . . designed for switching and wide band amplifier applications.
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2N5336
2N5339
2N6190
2N6193
LT 5337
2N5339
2N6193, Motorola
LN 7904
2n5337
2n5338
NS338
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MPF108
Abstract: No abstract text available
Text: MPF108 SILICON JUNCTION FIELD-EFFECT TRAN SISTO R SILICO N N-CHANNEL JUNCTION FIELD-EFFECT T R A N SIST O R SY M M E T R IC A L SILICO N N-CHANNEL Depletion mode (Type A) transistor designed for V H F amplifier and mixer applications. Type A • Devices are Classified and Identified in 2:1 IQ SS Ranges
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MPF108
MPF108
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MJ3773
Abstract: AN-415 MJ6302
Text: MJ3773, MJ6302 SILICON 16 AM PERE POWER TR A N SISTO R S HIGH POWER NPN SILICO N POWER TRA N SISTO R S Hpibase transistors for ultimate circu it performance based on the designer's requirement. E P IB A S E NPN SILICO N 120, 140 V O L T S 200 W ATTS — designed for power am plifier and switching
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MJ3773,
MJ6302
MJ3773
MJ6302
MJ3773
I--55
AN-415
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2N5845
Abstract: MPS834 MPS3638
Text: MPS834 silicon NPN SILICO N SWITCHING TRA N SISTO R NPN SILICO N A N N U LA R SWITCHING TRA N SISTO R . . . designed for use in high-speed switching applications. • Collector-Em itter Breakdown Voltage — B V c E O = 30 V dc (Min) @ I q = 10 mAdc •
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MPS834
2N5845
MPS3638
MPS834
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MJ15001
Abstract: MJ15002 200 watts audio power amp transistors 200 watts audio amp power transistors 3576 transistor
Text: 4 1 MOTOROLA í 4 . G i r PNP NPN Ml15001 MJ15002 SEMICONDUCTOR TECHNICAL DATA 15 AM PER E POWER TRA N SISTO R S CO M PLEM EN TARY SILICO N CO M PLEM EN TARY SILICO N POWER TRA N SISTO R S 140 V O L T S 2 00 W A T T S The M J 15001 and M J 15002 are EpiBase power transistors designed
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MJ15001
MJ15002
MJ15002
MJ15001
200 watts audio power amp transistors
200 watts audio amp power transistors
3576 transistor
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2N5179
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA T h e RF Line 4.5 dB @ 200 MHz HIGH FREQUENCY TRANSISTOR NPN SILICO N NPN SILICO N RF HIGH FREQ UENCY TRANSISTOR . . . designed p r im a r ily fo r use in high -g a in , lo w -n o is e a m p lifie r , o s c il la to r, and m ix e r a p p lic a tio n s .
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2N5179
35flo
2N5179
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D515 transistor
Abstract: transistor c 5171 BD520 transistor s19 bd519 BD517 BD 54 transistor
Text: MOTOROLA SC -CXSTRS/R 6367254 “Tb F> MOTOROLA SC DE | t . 3 b 7 S S 4 00ö0ti03 Ö 96D 8 0 6 0 3 CXSTRS/ R F D T^33-o7 MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN SILICO N A M PLIFIER TR A N S IS TO R S 4 5 - 60 - 80 VOLTS 10 W ATTS NPN SILICO N ANNULAR
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0ti03
33-o7
BD515
BD517
BD519
BD516,
BD518,
BD520
D515 transistor
transistor c 5171
BD520
transistor s19
BD 54 transistor
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BUT50P
Abstract: MC 340 transistor y145m But50
Text: M O TO RO LA SC XSTRS/R F is e D | b3fc.7aS4 GQflMfl7M M | T -3 3 - J 9 MOTOROLA SEM ICO NDU CTO R BUT50P TECHNICAL DATA AD V A N C E INFORM ATION 8 AM PERES NPN SILICO N POWER DARLIN GTO N TRAN SISTO RS SW ITCHMODE* SE R IES NPN SILICO N POWER DARLIN GTO N TRAN SISTO RS
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T-33-J9
BUT50P
300/is,
MC 340 transistor
y145m
But50
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ic Lb 598 d
Abstract: MPQ3467 D 1879 transistor 2N3467 transistor N 343 AD Lb 598 d rfl3
Text: MPQ3467 SILICON QUAD D UAL IN-LINE PNP SILICO N AN N ULAR MEMORY D R IV E R TRA N SISTO R S QUAD DUAL-IN -LINE PNP SILICO N M EM ORY D R IV E R TR A N SISTO R S . . . designed for medium-current, high-speed switching, ferrite core and plated w ire memory driver, and MOS translator applications.
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MPQ3467
2N3467
O-116
100MHzl
50mAdc)
100kJÃ
ic Lb 598 d
MPQ3467
D 1879 transistor
2N3467
transistor N 343 AD
Lb 598 d
rfl3
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BD518
Abstract: BD517 BD515 BD520 BD516 BD516-1 BD519 BDS16 BDS18 A02K
Text: Tb MOTOROLA SC -CXSTRS/R FJ- 6367254 M OT O R O L A SC XSTRS/R »F|b3b?2SM QOflObQS 96D 8 0 6 0 5 F T D - 3 S - / 7 MOTOROLA SEM ICO NDUCTO R TECHNICAL DATA PNP SILICO N ANNULAR * AM PLIFIER TR A N SISTO R S 4 5 - 6 0 - 8 0 VOLTS 10 WATTS PNP SILICO N ANNULAR
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45Vdc
BD516
BD518
BD520
BD515,
BD517,
BD519
BD516-1,
8D516-5,
BD517
BD515
BD516-1
BDS16
BDS18
A02K
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2N6388
Abstract: No abstract text available
Text: SGS-THOMSON 2N6387 2N6388 [MSIfiiSilLiSìlKìtÉfflOSS SILICO NPN POWER DARLINGTON TRANSISTORS . 2N6388 IS SGS-THOMSON PREFERRED SALESTYPE . NPN DARLINGTON . HIGH CURRENT CAPABILITY . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE DESCRIPTION The 2N6387 and
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2N6387
2N6388
2N6388
O-220
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4227t
Abstract: 2043A TRANSISTOR R 2453
Text: SANYO SEMICONDUCTOR CORP 2SD1914 NPN Epitaxial Planar Silico n Darlington Transistor 204 3 A - Driver Applications . 2453 Applications . Motor drivers, printer hammer drivers, relay drivers, voltage regulator control Features . Darlington connection . High DC current gain
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2SD1914
IS-126
1S-126A
IS-20MA
4227t
2043A
TRANSISTOR R 2453
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KST4123
Abstract: No abstract text available
Text: KST4123 NPN EPITAXIAL SILICO N TRANSISTO R GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Rating Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation
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KST4123
OT-23
10/iA,
100MHz
100MHz
100KHz
00/jA,
b4142
QQ2S117
KST4123
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MD982
Abstract: MD982F MQ982
Text: MD982 SILICON MD982F MQ982 M ULTIPLE SILICO N ANNULAR TRANSISTORS PNP SILICON M ULTIPLE TRANSISTORS . . . designed for use as differential am plifiers, dual general-purpose am plifiers, front end detectors, and temperature compensation applications. •
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MD982
MD982F
MQ982
MQ982
MD980)
IC-10
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transistor A55
Abstract: MPSA55 a06 transistor MPS-A05 MPS-A06 MPS-A55 MPS-A56 MPSA06 transistor transistor mpsa 92 psa06
Text: MPS-A05, MPS-A06NPN MPS-A55, MPS-A56PNP SILICON C O M PLEM EN TARY SILICO N A N N U LA R A M P L IF IE R TR A N S IS TO R S C O M PLEM EN TARY SILICO N A M P L IF IE R TRA N SISTO R S . designed for use as medium-power driver and low-power outputs. High Collector-Emitter Breakdown Voltage —
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MPS-A05,
MPS-A06NPN
MPS-A55,
MPS-A56PNP
-MPS-A05,
MPS-A55
MPS-A06,
MPS-A56
transistor A55
MPSA55
a06 transistor
MPS-A05
MPS-A06
MPS-A55
MPSA06 transistor
transistor mpsa 92
psa06
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b1181
Abstract: 2043A TRANSISTOR b1181 transistor 9-t b1252 TRANSISTOR darlington fp 1016 2SD1914 DDD3710 IC 2453 FSIM
Text: SANYO SEMICONDUCTOR CORP 2SD1914 NPN Epitaxial Planar Silico n Darlington Transistor 204 3 A - Driver Applications . 2453 Applications . Motor drivers, printer hammer drivers, relay drivers, voltage regulator control Features . Darlington connection . High DC current gain
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2SD1914
B1181
B1252
2043A
TRANSISTOR b1181
transistor 9-t
b1252 TRANSISTOR
darlington fp 1016
DDD3710
IC 2453
FSIM
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MMBA811C7
Abstract: MMBT5086 transistor marking fl VC80
Text: SAMSUNG SEMICONDUCTOR INC MMBA811C7 14E D §7^4143 0007530 & | PNP EPITAXIAL SILICO N TRANSISTOR DRIVER TRANSISTOR " SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Vottage Coitector Current
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MMBA811C7_
MMBT5086
OT-23
100MHz
MMBA811C7
transistor marking fl
VC80
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KSD5005
Abstract: No abstract text available
Text: NPN TRIPLE DIFFUSED PLANAR SILICO N TRANSISTOR KSD5005 COLOR TV HORIZONTAL OUT PUT APPLICATIONS HIGH Collector-Base Voltage V Cb o = 1500V ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
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KSD5005
KSD5005
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Untitled
Abstract: No abstract text available
Text: NPN EPITAXIAL SILICO N TRANSISTOR KST1009F1/F2/F3/F4/F5 AM/FM RF AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic j | | | Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation
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KST1009F1/F2/F3/F4/F5
100MHz
KST1009F1
KST1009F2
KST1009F3
KST1009F4
KST1009F5
KST1009F1
KST1009F2
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Untitled
Abstract: No abstract text available
Text: MMBTA92 PNP EPITAXIAL SILICO N TRAN SISTO R HIGH VOLTAGE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature
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MMBTA92
OT-23
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MJH6284
Abstract: No abstract text available
Text: MOTOROLA Order this document by MJH6284/D SEMICONDUCTOR TECHNICAL DATA NPN MJH6284 Darlington Com plem entary Silico n Power Transistors PNP MJH6287 . . . designed for general-purpose amplifier and low-speed switching motor control applications. • • •
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MJH6284/D
2N6284
2N6287
MJH6284
MJH6287
t-800-441-244
MJH6284
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Untitled
Abstract: No abstract text available
Text: KSC5054 NPN EPITAXIAL SILICO N TRANSISTOR HIGH SPEED HIGH VOLTAGE SWITCHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS Characteristic Collector B ase Voltage Collector Emitter Voltage Emitter B ase Voltage B ase Current Collector Current DC "Collector Current (Pulse)
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KSC5054
7Tb4142
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