dh340
Abstract: rf detector diodes
Text: SILICON SCHOTTKY DIODES Silicon Schottky barrier detector diodes SILICON SCHOTTKY BARRIER DETECTOR DIODES Description Silicon Schottky barrier detector diodes are available as: • packaged diodes • chip They are optimized for wide band applications, in the frequency range from 1 to 18 GHz.
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DH340
rf detector diodes
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Untitled
Abstract: No abstract text available
Text: SILICON SCHOTTKY DIODES Silicon Schottky barrier detector diodes SILICON SCHOTTKY BARRIER DETECTOR DIODES Description Silicon Schottky barrier detector diodes are available as: • packaged diodes • chip They are optimised for wide band applications, in the frequency range from 1 to 18 GHz.
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DH340
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Untitled
Abstract: No abstract text available
Text: SILICON SCHOTTKY DIODES Silicon Schottky barrier detector diodes SILICON SCHOTTKY BARRIER DETECTOR DIODES Description Silicon Schottky barrier detector diodes are available as: • packaged diodes • chip They are optimized for wide band applications, in the frequency range from 1 to 18 GHz.
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DH340
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DH323
Abstract: No abstract text available
Text: SILICON SCHOTTKY DIODES Selection guide SILICON SCHOTTKY DIODES Selection Guide PAGE SCHOTTKY BARRIER DETECTOR DIODES 1-29 SCHOTTKY BARRIER MIXER DIODES 1-30 1-28 SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net SILICON SCHOTTKY DIODES Silicon Schottky barrier detector diodes
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IR photodiode
Abstract: PSS1705 silicon photodiode
Text: DATA SHEET PSS1705 SILICON PHOTODIODE TYPE PSS1705 PSS1705 is a PIN Silicon PHOTODIODE with an Active Area 0.88 mm2. It combines excellent blue light sensitivity with more than average Near IR response. This product is packaged in a ceramic case with a plastic lens. Pacific Silicon Sensor Inc. can also fabricate Silicon Detectors to your
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PSS1705
PSS1705
ACTIV00
IR photodiode
silicon photodiode
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x band diode detector waveguide
Abstract: CME7660-000 DIODE RL 207 8E08 detector doppler ka CDB7619-000 CDC7630-000 RF 207 Silicon Detector Diodes Alpha Industries
Text: Silicon Schottky Barrier Detector Diodes Features 3 Both P–Type and N–Type Low Barrier Silicon Available Low 1/f Noise Bonded Junctions for Reliability Planar Passivated Beam–Lead and Chip Construction See Also Zero Bias Silicon Schottky Barrier Detector Diodes
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PSS15-7-P
Abstract: PIN photodiode 500 nm
Text: DATA SHEET PSS15-7-P LARGE AREA SILICON PHOTODIODE PSS15-7-P PSS15-7-P is a PIN Silicon PHOTODIODE with an Active Area 15 mm2. It combines excellent blue light sensitivity with more than average Near IR response. This product is packaged on PCB board without a window. Pacific Silicon Sensor Inc. can also fabricate Silicon Detectors to your
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PSS15-7-P
PSS15-7-P
PIN photodiode 500 nm
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71608 detectors
Abstract: 71891 Oriel 71891 71608 77058 Oriel Instruments 71894
Text: SILICON DETECTORS Light Sources 0.4 UV-ENHANCED SILICON 0.2 VIS-IR SILICON 0.0 200 400 600 800 1000 1200 Photolithography TYPICAL RESPONSIVITY A/W 0.6 READOUT ELECTRONICS You will find many of these detectors on other pages of this catalog where they are matched with readout
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C30902S
Abstract: C30902E geiger PerkinElmer Avalanche Photodiode geiger counter C30921E avalanche photodiode c30902e PerkinElmer trigger avalanche photodiode bias C30921S
Text: Description Silicon Avalanche Photodiodes PerkinElmer Type C30902E avalanche C30902E, C30902S, C30921E, C30921S EVERYTHING High Speed Solid State Detectors for Fiber Optic and Very Low Light-Level Applications IN A photodiode utilizes a silicon detector chip
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C30902E
C30902E,
C30902S,
C30921E,
C30921S
C30902S
geiger
PerkinElmer Avalanche Photodiode
geiger counter
C30921E
avalanche photodiode c30902e
PerkinElmer trigger
avalanche photodiode bias
C30921S
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diodes
Abstract: em 434 IMPATT gunn diodes Tuning Varactors varactors GUNN Diodes high frequency step recovery diodes PIN diodes
Text: M icro w ave S em ico nducto rs Contents PAGE Schottky Diodes Silicon Schottky Mixer Diodes . 404 Silicon Schottky Detector Diodes 408 Frequency Multiplier Diodes Silicon Step Recovery Diodes GaAs Multiplier Varactors Tuning Varactor Diodes Silicon Tuning Varactors
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426iplier
diodes
em 434
IMPATT
gunn diodes
Tuning Varactors
varactors
GUNN
Diodes high frequency
step recovery diodes
PIN diodes
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MD7002
Abstract: RB2K MD7002A MD7002B IB 6407 02k02
Text: MD7002 silicon MD7002A MD7002B NPN SILICON ANNULAR MULTIPLE TRANSISTORS NPN SILICON MULTIPLE TRANSISTORS . . . designed for use as differential am plifiers, dual general-purpose am plifiers, front end detectors and temperature compensation applications.
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MD7002
MD7002A
MD7002B
100/uAdc
M07CI02A
MD7CI02B
MD7002B
MD7002A
MD7002
RB2K
IB 6407
02k02
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md8003
Abstract: md8002 md8001 65407
Text: MD8001 SILICON MD8002 MD8003 NPN SILICON MULTIPLE TRANSISTORS MULTIPLE SILICON ANNULAR TRANSISTORS . . . designed for use as differential amplifiers, dual general-purpose amplifiers, front-end detectors and tem perature compensation ap plications. •
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MD8001
MD8002
MD8003
MD8001
MD8003
65407
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MBS4992
Abstract: MBS4991 equivalent MBS4991 triac phase control circuits triac phase control B50C bidirectional switch scr triggering
Text: MBS4991 silicon MBS4992 SILICON BIDIRECTIONAL SWITCH (PLASTIC) 6.0-10 VOLTS 500 mW SILICON BIDIRECTIONAL SWITCH . . . designed for full-wave triggering in Triac phase control circuits, half-wave SCR triggering application and as voltage level detectors.
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MBS4991
MBS4992
MBS4992
MBS4991 equivalent
MBS4991
triac phase control circuits
triac phase control
B50C
bidirectional switch
scr triggering
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m0325
Abstract: M-0325 MD3250 MD3250F MD3251 MD3251F MQ3251 MQ3261
Text: MD3250, A, F, AF SILICON MD3251, A, F, AF MQ3251 MULTIPLE SILICON ANNULAR TRANSISTORS PNP SILICON MULTIPLE TRANSISTORS . . . designed for use as differential amplifiers, dual general-purpose amplifiers, front end detectors and temperature compensation applications.
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MD3250,
MD3251,
MQ3251
50mAdc
MD3251
MD3250'
m0325
M-0325
MD3250
MD3250F
MD3251
MD3251F
MQ3251
MQ3261
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MQ3799A
Abstract: MQ3798 MQ3799 4PD4
Text: MQ3798 silicon MQ3799 MQ3799A PNP SILICON ANNULAR PNP SILICON M ULTIPLE TRANSISTORS M ULTIPLE TRANSISTORS . . . designed for use in high-gain, low noise amplifiers; front end detectors and temperature compensation applications. Low Collector-Emitter Saturation Voltage —
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MQ3798
MQ3799
MQ3799A
MQ3799A
MQ3798
4PD4
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MD708B
Abstract: VE-16V MD708 MD708A MD708AF MD708BF MD708F
Text: MD708, F silicon MD708A, AF MD708B, BF NPN SILICON ANNULAR MULTIPLE: TRANSISTORS . . . designed for use as differential amplifiers, dual high-speed switches, front end detectors and temperature com pensation ap plications. • NPN SILICON MULTIPLE TRANSISTORS
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MD708,
MD708A,
MD708B,
MD708A
MD708B
VE-16V
MD708
MD708AF
MD708BF
MD708F
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Untitled
Abstract: No abstract text available
Text: SILICON SENSORS INC TS 5 F J Û H S 3 T 2 S □□□□3bb h NPN SILICON PHOTO DETECTOR Silicon Sensors SPT 15 is a high sensitivity N P N Planar Silicon Photo Transistor expressly designed for convenient application in th e tap e and card leaders, ch aracter recognition, industrial inspec
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MW front END
Abstract: MD3250 MD3250F MD3251 MD3251F MQ3251
Text: MD3250, A, F, AF SILICON MD3251, A, F, AF MQ3251 M ULTIPLE SILICON AN N U LA R TRANSISTORS PNP SILICON M ULTIPLE TRANSISTORS . . . designed for use as differential amplifiers, dual general-purpose amplifiers, front end detectors and temperature compensation
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MD3250,
MD3251,
MQ3251
50mAdc
Volt13
MD3250
MD3251
MD3250F
MD3251F
MW front END
MQ3251
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MD218
Abstract: MD2219 MD2218 WE VQE 11 E MD2218A MD2218AF MD2218F MD2219A MD2219AF MD2219F
Text: MD2218, MD2218A SILICON MD2218F, MD2218AF MD2219, MD2219A MD2219F, MD2219AF MQ2218,A,MQ2219,A MULTIPLE SILICON ANNULAR TRANSISTORS NPN SILICON MULTIPLE TRANSISTORS . . . designed for use as differential am plifiers, dual general-purpose am plifiers, front end detectors and temperature compensation ap
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MD2218
MD2218A
MD2218F,
MD2218AF
MD2219,
MD2219A
MD2219F,
MD2219AF
MQ2218,
MQ2219
MD218
MD2219
WE VQE 11 E
MD2218A
MD2218F
MD2219F
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MD7000
Abstract: 335 j chip die npn transistor 46bsc
Text: MD7000 SILICON MULTIPLE SILICON ANNULAR TRANSISTOR NPN SILICON MULTIPLE TRANSISTOR . . . designed fo r use as differential amplifiers, dual general-purpose amplifiers, fro n t end detectors and tem perature compensation appli cations. • Low Collector-E m itter Saturation Voltage —
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MD7000
MD7000
335 j
chip die npn transistor
46bsc
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CDB7619-000
Abstract: CDE7618-000 Silicon Detector Diodes
Text: EBA lpha Silicon Schottky Barrier Detector Diodes Features Both P-Type and N-Type Low Barrier Silicon Available Low 1/f Noise Bonded Junctions for Reliability Planar Passivated Beam-Lead and Chip Construction See Also Zero Bias Silicon Schottky Barrier Detector Diodes
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MD986
Abstract: MD986F MD966 508 die 610-A03
Text: MD9 8 6 silicon MD9 8 6 F NPN/PNP SILICON M ULTIPLE TRANSISTORS M ULTIPLE SILICON ANNULAR TRANSISTORS . . . designed for use as switches, dual general-purpose amplifiers, front end detectors and in temperature compensation applications. • Low Collector-Emitter Saturation Voltage -V cE(sat) ~ 0.3 Vdc (Max) @ I q = 10mAdc
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MD986
MD986F
10MAdc,
MD986F
300ms.
MD986
MD966
508 die
610-A03
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SS-3002
Abstract: SS300-2 SS3002 silicon diode load SILICON SENSORS Silicon Sensors, Inc
Text: 8253922 SILICON SENSORS INC SILICON SENSORS INC — i m ISII lisi ^ 75C 003^0 D7W/- dF 00D034Q 0 | ö 2S3T22 SILICON SENSORS, INC. Highw ay 1 8 East D odgeville, Wisconsin 5 3 5 3 3 Telephone: 6 0 8 9 3 5 -2 7 0 7 8253922 SILICON SENSORS INC SILICON SENSORS INC
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D7W/00D034Q
2S3T22
D000341
SS-300
SS-300
SS-3002
SS300-2
SS3002
silicon diode load
SILICON SENSORS
Silicon Sensors, Inc
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MD982
Abstract: MD982F MQ982
Text: MD982 SILICON MD982F MQ982 M ULTIPLE SILICO N ANNULAR TRANSISTORS PNP SILICON M ULTIPLE TRANSISTORS . . . designed for use as differential am plifiers, dual general-purpose am plifiers, front end detectors, and temperature compensation applications. •
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MD982
MD982F
MQ982
MQ982
MD980)
IC-10
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