Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-13012 R0 P1/10 MBN800E33D-AX Silicon N-channel IGBT 3300V D version FEATURES High speed low loss IGBT. Low-injection punch-through IGBT. Low driving power due to low input capacitance MOS gate. High speed low recovery loss diode.
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IGBT-SP-13012
P1/10
MBN800E33D-AX
000cycles)
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GT60M303 application
Abstract: GT60M303
Text: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit: mm Fourth generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.25 s TYP. FRD : trr = 0.7 s (TYP.)
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GT60M303
GT60M303 application
GT60M303
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GT60M303 application
Abstract: GT60M303 circuit igbt failure rate
Text: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit: mm z Fourth generation IGBT z FRD included between emitter and collector z Enhancement mode type z High speed IGBT : tf = 0.25µs TYP.
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GT60M303
GT60M303 application
GT60M303 circuit
igbt failure rate
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GT60M303
Abstract: GT60M303 circuit toshiba code igbt TOSHIBA IGBT TOSHIBA IGBT GT60M303
Text: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 Unit: mm HIGH POWER SWITCHING APPLICATIONS Fourth generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.25µs TYP. FRD : trr = 0.7µs (TYP.)
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GT60M303
GT60M303
GT60M303 circuit
toshiba code igbt
TOSHIBA IGBT
TOSHIBA IGBT GT60M303
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GT60M303 application
Abstract: GT60M303 gt60m303 application notes
Text: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit: mm z Fourth generation IGBT z FRD included between emitter and collector z Enhancement mode type z High speed IGBT : tf = 0.25 s TYP.
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GT60M303
GT60M303 application
GT60M303
gt60m303 application notes
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MG150J7KS50
Abstract: No abstract text available
Text: MG150J7KS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150J7KS50 High Power Switching Applications Motor Control Applications The electrodes are isolated from case. High input impedance 7 IGBTs built into 1 package. Enhancement-mode High speed type IGBT :
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MG150J7KS50
2-110A1B
MG150J7KS50
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28v motor toshiba
Abstract: transistor a 92
Text: MG150J7KS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150J7KS50 High Power Switching Applications Motor Control Applications The electrodes are isolated from case. High input impedance 7 IGBTs built into 1 package. Enhancement-mode High speed type IGBT :
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MG150J7KS50
2-110A1B
28v motor toshiba
transistor a 92
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GT30J301
Abstract: No abstract text available
Text: GT30J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30µs Max. : VCE (sat) = 2.7V (Max.)
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GT30J301
GT30J301
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10j312
Abstract: GT10J312 marking code SM diode
Text: GT10J312,GT10J312 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J312, GT10J312(SM) HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm Third-generation IGBT Enhancement mode type High speed : tf = 0.30µs (Max.)
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GT10J312
GT10J312,
10j312
marking code SM diode
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gt60n321
Abstract: No abstract text available
Text: GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High Power Switching Applications Fourth Generation IGBT Unit: mm • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.25 µs typ. (IC = 60 A)
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GT60N321
gt60n321
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15j321
Abstract: TRANSISTOR 15J321 GT15J321 TRANSISTOR 10003 TOSHIBA IGBT DATA BOOK 2-10R1C marking 6_a
Text: GT15J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J321 High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Fast switching FS • Enhancement mode type • High speed: tf = 0.03 µs (typ.
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GT15J321
15j321
TRANSISTOR 15J321
GT15J321
TRANSISTOR 10003
TOSHIBA IGBT DATA BOOK
2-10R1C
marking 6_a
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Untitled
Abstract: No abstract text available
Text: GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High-Power Switching Applications Fourth Generation IGBT Unit: mm • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.25 s typ. (IC = 60 A)
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GT60N321
170mitation,
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TRANSISTOR 15J321
Abstract: 15j321 RG105
Text: GT15J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J321 High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Fast switching FS • Enhancement mode type • High speed: tf = 0.03 µs (typ.
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GT15J321
TRANSISTOR 15J321
15j321
RG105
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Untitled
Abstract: No abstract text available
Text: GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High-Power Switching Applications Fourth Generation IGBT Unit: mm • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.25 s typ. (IC = 60 A)
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GT60N321
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15j301
Abstract: transistor 15j301 GT15J301 2-10R1C
Text: GT15J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30µs Max. (IC = 15A) Low saturation voltage
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GT15J301
15j301
transistor 15j301
GT15J301
2-10R1C
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GT60N32
Abstract: GT60N321
Text: GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High Power Switching Applications Fourth Generation IGBT Unit: mm • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.25 µs typ. (IC = 60 A)
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GT60N321
GT60N32
GT60N321
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GT60N32
Abstract: gt60n321 GT60 IC601
Text: GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High Power Switching Applications Fourth Generation IGBT Unit: mm • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.25 s typ. (IC = 60 A)
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GT60N321
GT60N32
gt60n321
GT60
IC601
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10j303
Abstract: IGBT Guide GT10J303 Toshiba c
Text: GT10J303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J303 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed Low saturation voltage : tf = 0.30µs Max. (IC = 10A)
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GT10J303
10j303
IGBT Guide
GT10J303
Toshiba c
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2-10R1C
Abstract: 5J301 GT5J301 Toshiba c
Text: GT5J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT5J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30µs Max. (IC = 5A) Low saturation voltage
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GT5J301
2-10R1C
5J301
GT5J301
Toshiba c
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15j321
Abstract: TRANSISTOR 15J321 2-10R1C GT15J321 RG300A
Text: GT15J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J321 High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Fast switching FS • Enhancement mode type • High speed: tf = 0.03 s (typ.
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GT15J321
15j321
TRANSISTOR 15J321
2-10R1C
GT15J321
RG300A
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MG100J7KS50
Abstract: No abstract text available
Text: MG100J7KS50 TOSHIBA GTR Module Silicon N Channel IGBT MG100J7KS50 Unit: mm High Power Switching Applications Motor Control Applications The electrodes are isolated from case. High input impedance 7 IGBTs built into 1 package. Enhancement-mode High speed type IGBT
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MG100J7KS50
2-110A1B
000707EAA2
MG100J7KS50
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Untitled
Abstract: No abstract text available
Text: MG100J7KS50 TOSHIBA GTR Module Silicon N Channel IGBT MG100J7KS50 Unit: mm High Power Switching Applications Motor Control Applications The electrodes are isolated from case. High input impedance 7 IGBTs built into 1 package. Enhancement-mode High speed type IGBT
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MG100J7KS50
2-110A1B
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Untitled
Abstract: No abstract text available
Text: GT30J126 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J126 High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Enhancement mode type • Fast switching FS : Unit: mm High speed: tf = 0.05 s (typ.)
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GT30J126
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Untitled
Abstract: No abstract text available
Text: TO SH IBA TENTATIVE MIG50J804H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG50J804H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter Power Circuits in One Package. • Output Inverter Stage : 3ji 50A /600V High Speed Type IGBT
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OCR Scan
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MIG50J804H
/600V
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