SILICON N CHANNEL MOSFET TETRODE Search Results

SILICON N CHANNEL MOSFET TETRODE Result Highlights (5)

Part	Manufacturer	Description
PQU650-12P	Murata Manufacturing Co Ltd	AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
XPJ1R004PB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL
TK4K1A60F	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS

SILICON N CHANNEL MOSFET TETRODE Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BF998 Abstract: G1 TRANSISTOR Marking G2 mosfet tetrode TRANSISTOR mosfet BF998 BF998 marking code BF marking code BF transistor datasheet transistor marking G1 electrostatic discharge Text: BF 998R Silicon N-Channel MOSFET Tetrode • Short-channel transistor with high S/C quality factor • For low noise, gain-controlled input stages up to 1 GHz Reverse pinout version of BF998 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BF998 Q62702-F1177 OT-143R Oct-23-1996 BF998 G1 TRANSISTOR Marking G2 mosfet tetrode TRANSISTOR mosfet BF998 BF998 marking code BF marking code BF transistor datasheet transistor marking G1 electrostatic discharge	PDF
BF998W Abstract: SOT 343 MARKING BF BF998 Text: BF998W Silicon N-Channel MOSFET Tetrode 3 Short-channel transistor 4 with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking	Original	BF998W VPS05605 OT-343 Cha00 EHT07305 EHT07306 May-05-1999 BF998W SOT 343 MARKING BF BF998	PDF
BF998 Abstract: bf998 mosfet tetrode application note TRANSISTOR mosfet BF998 p 1S marking SOT143 VPS05178 application BF998 Text: BF998 3 Silicon N-Channel MOSFET Tetrode 4 • Short-channel transistor with high S/C quality factor 2 • For low-noise, gain-controlled input stages up to 1 GHz 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF998	Original	BF998 VPS05178 OT143 Apr-14-2003 BF998 bf998 mosfet tetrode application note TRANSISTOR mosfet BF998 p 1S marking SOT143 VPS05178 application BF998	PDF
BF998W Abstract: 998 transistor bf998 102001 transistor BF 998 Text: BF998W Silicon N-Channel MOSFET Tetrode 3 Short-channel transistor 4 with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking	Original	BF998W VPS05605 OT343 EHT07305 EHT07306 Aug-10-2001 BF998W 998 transistor bf998 102001 transistor BF 998	PDF
BF998R Abstract: 998 transistor transistor BF 998 Text: BF998R Silicon N-Channel MOSFET Tetrode Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF998R MRs Pin Configuration	Original	BF998R OT143R sold00 EHT07305 EHT07306 Aug-10-2001 BF998R 998 transistor transistor BF 998	PDF
TRANSISTOR mosfet BF998 Abstract: BF998 SIEMENS BF998 marking code Text: SIEMENS BF 998W Silicon N-Channel MOSFET Tetrode • Shorl-channel transistor with high S/C quality factor • For low noise, gain-controlled input stages up to 1 GHz Reverse pinout version of BF998 ESD: Electrostatic discharge sensitive device, observe handling precaution!	OCR Scan	BF998 Q62702-F1586 OT-343 TRANSISTOR mosfet BF998 BF998 SIEMENS BF998 marking code	PDF
SOT-343 Abstract: G1 TRANSISTOR TRANSISTOR mosfet BF998 SOT 343 MARKING BF mosfet tetrode Marking G2 transistor marking code G1 BF998 marking code 1D TRANSISTOR bf998 mosfet tetrode application note Text: BF 998W Silicon N-Channel MOSFET Tetrode • Short-channel transistor with high S/C quality factor • For low noise, gain-controlled input stages up to 1 GHz Reverse pinout version of BF998 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BF998 Q62702-F1586 OT-343 Jul-30-1996 SOT-343 G1 TRANSISTOR TRANSISTOR mosfet BF998 SOT 343 MARKING BF mosfet tetrode Marking G2 transistor marking code G1 BF998 marking code 1D TRANSISTOR bf998 mosfet tetrode application note	PDF
Untitled Abstract: No abstract text available Text: SIEMENS BF 998W Silicon N-Channel MOSFET Tetrode • Short-channel transistor with high S/C quality factor • For low noise, gain-controlled input stages up to 1 GHz Reverse pinout version of BF998 ESD: Electrostatic discharge sensitive device, observe handling precaution!	OCR Scan	BF998 Q62702-F1586 OT-343 fl235bG5	PDF
bf998 Abstract: bf998 mosfet tetrode application note VPS05178 Text: BF998 Silicon N-Channel MOSFET Tetrode 3 Short-channel transistor with high S/C quality factor 4 For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking	Original	BF998 VPS05178 OT143 EHT07305 EHT07306 Aug-10-2001 bf998 bf998 mosfet tetrode application note VPS05178	PDF
Silicon N Channel MOSFET Tetrode Abstract: marking code g1s Text: SIEMENS Silicon N-Channel MOSFET Tetrode Preliminary data • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V ESD: Electrostatic discharge sensitive device, observe handling precaution 1 =S II Q62702-F1773 CM N Es Package	OCR Scan	Q62702-F1773 100a/A Silicon N Channel MOSFET Tetrode marking code g1s	PDF
Untitled Abstract: No abstract text available Text: SIEMENS BF 2000W Silicon N Channel MOSFET Tetrode Target data sheet • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz Type Marking BF 2000W NDs Ordering Code Pin Configuration Q62702-F1772	OCR Scan	Q62702-F1772 OT-343	PDF
k d 998 0 Abstract: transistor BF 998 998 transistor bf998 EHT0730 VPS05178 BF 998 Text: BF 998 Silicon N-Channel MOSFET Tetrode 3 Short-channel transistor with high S/C quality factor 4 For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking	Original	VPS05178 OT-143 Res00 EHT07305 EHT07306 Oct-26-1999 k d 998 0 transistor BF 998 998 transistor bf998 EHT0730 VPS05178 BF 998	PDF
marking code g1s Abstract: Q62702-F1129 D 998 TRANSISTOR Text: Silicon N Channel MOSFET Tetrode BF 998 Features ● Short-channel transistor with high S/C quality factor ● For low-noise, gain-controlled input stages up to 1 GHz Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 4 Package1) BF 998 MO	Original	Q62702-F1129 OT-143 marking code g1s Q62702-F1129 D 998 TRANSISTOR	PDF
p 1S marking SOT143 Abstract: No abstract text available Text: BF2040. Silicon N-Channel MOSFET Tetrode • For low noise , high gain controlled input stages up to 1GHz • Operating voltage 5 V ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF2040	Original	BF2040. BF2040 BF2040R BF2040W OT143 OT343 BF2040, BF2040W p 1S marking SOT143	PDF

BF2040 Abstract: BF2040R BF2040W 1V66 Text: BF2040. Silicon N-Channel MOSFET Tetrode • For low noise , high gain controlled input stages up to 1GHz • Operating voltage 5 V ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF2040	Original	BF2040. BF2040 OT143 BF2040R BF2040W OT343 Feb-25-2004 BF2040 BF2040R BF2040W 1V66	PDF
sot143 sot343 Abstract: No abstract text available Text: BF2040. Silicon N-Channel MOSFET Tetrode • For low noise , high gain controlled input stages up to 1GHz • Operating voltage 5 V ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF2040	Original	BF2040. BF2040 BF2040R BF2040W OT143 OT343 BF2040, BF2040W sot143 sot343	PDF
E6327 Abstract: DIN 6784 BF2040 BF2040R BF2040W BFP181 BGA420 sot143 marking code G2 p 1S marking SOT143 Text: BF2040. Silicon N-Channel MOSFET Tetrode • For low noise , high gain controlled input stages up to 1GHz • Operating voltage 5 V ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF2040	Original	BF2040. BF2040 OT143 BF2040R BF2040W OT343 E6327 DIN 6784 BF2040 BF2040R BF2040W BFP181 BGA420 sot143 marking code G2 p 1S marking SOT143	PDF
BF2040 Abstract: BF2040R BF2040W sot143 sot343 Text: BF2040. Silicon N-Channel MOSFET Tetrode • For low noise , high gain controlled input stages up to 1GHz • Operating voltage 5 V ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF2040	Original	BF2040. BF2040 OT143 BF2040R BF2040W OT343 BF2040 BF2040R BF2040W sot143 sot343	PDF
BF2040W Abstract: No abstract text available Text: BF2040. Silicon N-Channel MOSFET Tetrode • For low noise , high gain controlled input stages up to 1GHz • Operating voltage 5 V ESD Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF2040	Original	BF2040. BF2040 OT143 BF2040R BF2040W OT343 BF2040W	PDF
mosfet marking code gg Abstract: No abstract text available Text: BF2040. Silicon N-Channel MOSFET Tetrode • For low noise , high gain controlled input stages up to 1GHz • Operating voltage 5 V ESD Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF2040	Original	BF2040. BF2040 BF2040R BF2040W OT143 OT143R OT343 BF2040, BF2040W mosfet marking code gg	PDF
Untitled Abstract: No abstract text available Text: SIEM ENS BF 988 Silicon N Channel MOSFET Tetrode • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz Type Marking Ordering Code BF 988 - Q62702-F36 Pin Configuration 2 4 1 3 S D Û2 Package1	OCR Scan	Q62702-F36 300MHz r-700 fl235b05 00bbfl73 EHM070I2 EHM07013 00bb074	PDF
d 998 transistor circuit Abstract: No abstract text available Text: SIEM ENS Silicon N Channel MOSFET Tetrode BF 998 Features • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz Type Marking Ordering Code tape and reel Pin Configuration 4 1 2 3 Package1) B F 998	OCR Scan	Q62702-F1129 T-143 M27ol BB5151 J8B515 d 998 transistor circuit	PDF
Untitled Abstract: No abstract text available Text: SIEMENS Silicon N Channel MOSFET Tetrode Target data sheet • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 G H z Type Marking Ordering Code Pin Configuration B F 2000 NDs Q62702-F1771 1 =S 2 =D	OCR Scan	Q62702-F1771 OT-143	PDF
Silicon N Channel MOSFET Tetrode Abstract: Q62702-F1772 marking code g1s BF 2000W Text: BF 2000W Silicon N Channel MOSFET Tetrode Target data sheet 3 • Short-channel transistor 4 with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz 2 1 Type Marking Ordering Code BF 2000W NDs Q62702-F1772 VPS05605 Pin Configuration	Original	Q62702-F1772 VPS05605 OT-343 Silicon N Channel MOSFET Tetrode Q62702-F1772 marking code g1s BF 2000W	PDF

SILICON N CHANNEL MOSFET TETRODE Search Results

SILICON N CHANNEL MOSFET TETRODE Result Highlights (5)

SILICON N CHANNEL MOSFET TETRODE Datasheets Context Search

BF998

BF998W

BF998

BF998W

BF998R

TRANSISTOR mosfet BF998

SOT-343

Untitled

bf998

Silicon N Channel MOSFET Tetrode

Untitled

k d 998 0

marking code g1s

p 1S marking SOT143

BF2040

sot143 sot343

E6327

BF2040

BF2040W

mosfet marking code gg

Untitled

d 998 transistor circuit

Untitled

Silicon N Channel MOSFET Tetrode