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    SILICON NITRIDE Search Results

    SILICON NITRIDE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MGN1S1208MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1D120603MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-6/-3V GAN Visit Murata Manufacturing Co Ltd
    MGN1S1212MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0508MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0512MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-12V GAN Visit Murata Manufacturing Co Ltd

    SILICON NITRIDE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Resistors Make Possible Wire Bondable Wire Capacitor Bondable Chip Chip Capacitor WBC Capacitor Series WBC Capacitor Series Nitride dielectric Silicon Dioxide/Silicon Capacitance range Nitride from 10pF to 1000pF • Silicon Dioxide/Silicon dielectric Silicon substrate


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    1000pF 2011/65/EU PDF

    C0303

    Abstract: C0505 C0202 C0404 C0606 capacitor 7900
    Text: Wire Bondable Chip Capacitor WBC Capacitor Series • Silicon Dioxide/Silicon Nitride dielectric • Capacitance range from 10pF to 1000pF • Silicon substrate with gold or aluminum backing IRC’s wire-bondable chip capacitors are based on the successful


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    1000pF MIL-STD-883 C0606 C0404 C0303 C0505 C0202 1000pF; 220pF; C0303 C0505 C0202 C0404 C0606 capacitor 7900 PDF

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    Abstract: No abstract text available
    Text: NC Series www.vishay.com Vishay Electro-Films Thin Film Single Value Chip and Wire Capacitors FEATURES • Wire bondable • Small size: 0.020 inches square to 0.060 inches square • Substrate: Silicon with gold backing • Dielectric: Silicon dioxide/silicon nitride


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    2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    C0303

    Abstract: c0505 361 J capacitor
    Text: Wire Bondable Chip Capacitor IRC Advanced Film Division WBC Series • Silicon substrate with gold backing • Silicon Dioxide/Silicon Nitride dielectric • Capacitance range from 10pF to 1000pF IRC’s wire-bondable chip capacitors are based on the successful


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    1000pF MIL-STD-883 C0404 C0606 C0303 C0505 C0202 1000pF; 220pF; c0505 361 J capacitor PDF

    Untitled

    Abstract: No abstract text available
    Text: NC Series www.vishay.com Vishay Electro-Films Thin Film Single Value Chip and Wire Capacitors FEATURES • Wire bondable • Small size: 0.020 inches square to 0.060 inches square • Substrate: Silicon with gold backing • Dielectric: Silicon dioxide/silicon nitride


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    11-Mar-11 PDF

    diode v2

    Abstract: ODS-186 MA4PBLP027
    Text: MA4PBL027 HMIC Silicon Beamlead PIN Diode Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ No Wirebonds Required Rugged Silicon-Glass Construction Silicon Nitride Passivation Polymer Scratch and Impact Protection Low Parasitic Capacitance and Inductance Ultra Low Capacitance < 40 fF


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    MA4PBL027 MA4PBLP027 MA4PBL027 diode v2 ODS-186 MA4PBLP027 PDF

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    Abstract: No abstract text available
    Text: NC Series Vishay Electro-Films Thin Film Single Value Chip and Wire Capacitors FEATURES Product may not be to scale • Small size: 0.020 to 0.060 inches square • Substrate: silicon with gold backing • Dielectric: silicon dioxide/silicon nitride CHIP CAPACITORS


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    MIL-STD-883. 08-Apr-05 PDF

    diode rj 93

    Abstract: ma4p HP4291A M541 MA4PBL027 20E-14 W-band diode ODS-186
    Text: HMICTM Silicon Beam-Lead PIN Diodes Features • • • • • • • • • • • MA4PBL027 V1 Case Style ODS-1302 Beam-Lead Device No Wirebonds Required Rugged Silicon-Glass Construction Silicon Nitride Passivation Polymer Scratch and Impact Protection


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    MA4PBL027 ODS-1302 diode rj 93 ma4p HP4291A M541 MA4PBL027 20E-14 W-band diode ODS-186 PDF

    40E-14

    Abstract: 60E8 ODS-186 HP4291A M541 MA4PBL027 TTL LS 40e8 ODS-186 outline
    Text: MA4PBL027 HMICTM Silicon Beam-Lead PIN Diodes Rev. V1 Features Absolute Maximum Ratings1 • • • • • • • • • • • @ TA = +25°C Unless otherwise specified Beam-Lead Device No Wirebonds Required Rugged Silicon-Glass Construction Silicon Nitride Passivation


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    MA4PBL027 40E-14 60E8 ODS-186 HP4291A M541 MA4PBL027 TTL LS 40e8 ODS-186 outline PDF

    Untitled

    Abstract: No abstract text available
    Text: Thin Film Single-Value Chip and Wire Capacitors FEATURES • Die sizes: 0.020 x 0.020 to 0.060 x 0.060 • Capacitance values: 0.50 pF to 1000 pF • Tightest tolerance: 2.5% • Dielectrics: Silicon dioxide MOS or silicon dioxide/silicon nitride (MNOS),


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    PDF

    Thin Film Capacitors

    Abstract: No abstract text available
    Text: NC Series Vishay Electro-Films Thin Film Single Value Chip and Wire Capacitors FEATURES Product may not be to scale • Wire bondable • Small size: 0.020 to 0.060 inches square • Substrate: Silicon with gold backing • Dielectric: Silicon dioxide/silicon nitride


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    18-Jul-08 Thin Film Capacitors PDF

    ncd62

    Abstract: No abstract text available
    Text: NC Series Vishay Electro-Films Thin Film Single Value Chip and Wire Capacitors FEATURES Product may not be to scale • Wire bondable • Small size: 0.020 to 0.060 inches square • Substrate: Silicon with gold backing • Dielectric: Silicon dioxide/silicon nitride


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    08-Apr-05 ncd62 PDF

    NC-AA

    Abstract: NCEE10
    Text: NC Series Vishay Electro-Films Thin Film Single Value Chip and Wire Capacitors FEATURES Product may not be to scale • Wire bondable • Small size: 0.020 inches square to 0.060 inches square • Substrate: Silicon with gold backing • Dielectric: Silicon dioxide/silicon nitride


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    18-Jul-08 NC-AA NCEE10 PDF

    Untitled

    Abstract: No abstract text available
    Text: NC Series Vishay Electro-Films Thin Film Single Value Chip and Wire Capacitors FEATURES Product may not be to scale • Wire bondable • Small size: 0.020 inches square to 0.060 inches square • Substrate: Silicon with gold backing • Dielectric: Silicon dioxide/silicon nitride


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    11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: NC Series Vishay Electro-Films Thin Film Single Value Chip and Wire Capacitors FEATURES Product may not be to scale • Substrate: silicon with gold backing • Dielectric: silicon dioxide/silicon nitride CHIP CAPACITORS The NC series of thin film capacitors has the advantage of


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    1000pF. 07-Aug-01 PDF

    Untitled

    Abstract: No abstract text available
    Text: NC Series Vishay Electro-Films Thin Film Single Value Chip and Wire Capacitors FEATURES Product may not be to scale • Substrate: silicon with gold backing • Dielectric: silicon dioxide/silicon nitride CHIP CAPACITORS The NC series of thin film capacitors has the advantage of


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    1000pF. MIL-STD-883. 08-Apr-05 PDF

    Untitled

    Abstract: No abstract text available
    Text: NC Series Vishay Electro-Films Thin Film Single Value Chip and Wire Capacitors FEATURES Product may not be to scale • Substrate: silicon with gold backing • Dielectric: silicon dioxide/silicon nitride CHIP CAPACITORS The NC series of thin film capacitors has the advantage of


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    1000pF. MIL-STD-883. 05-Mar-04 PDF

    Untitled

    Abstract: No abstract text available
    Text: NC Series Vishay Electro-Films Thin Film Single Value Chip and Wire Capacitors FEATURES Product may not be to scale • Substrate: silicon with gold backing • Dielectric: silicon dioxide/silicon nitride CHIP CAPACITORS The NC series of thin film capacitors has the advantage of


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    1000pF. MIL-STD-883. 03-Aug-04 PDF

    Untitled

    Abstract: No abstract text available
    Text: NC Series Vishay Electro-Films Thin Film Single Value Chip and Wire Capacitors FEATURES Product may not be to scale • Substrate: silicon with gold backing • Dielectric: silicon dioxide/silicon nitride CHIP CAPACITORS The NC series of thin film capacitors has the advantage of


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    1000pF. MIL-STD-883. 07-Aug-01 PDF

    nichrome

    Abstract: No abstract text available
    Text: Hybrid Chip and HD! Components Nichrome on Silicon General Features EFI produces nichrome on silicon chip resistors similar in size and geometry to its tantalum nitride on silicon line. Nichrome resistors on silicon provide even better long term stability and tighter tolerance than


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    Untitled

    Abstract: No abstract text available
    Text: Hybrid Chip and HDI Components Nichrome on Silicon General Features EFI produces nichrom e on silicon chip resistors similar in size and geometry to its tantalum nitride on silicon line. Nichrome resistors on silicon provide even better long term stability and tighter tolerance than


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    photosensor phototransistor

    Abstract: Photosensor OPC200 OPC260
    Text: OPTEK Product Bulletin OPC260 July 1996 NPN Silicon Phototransistor Chip Type OPC260 Features Optek Technology photosensor chips are fabricated using the latest silicon planar diffused technology and are silicon nitride passivated for long term stability. All photosensors have an


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    OPC260 OPC26Q OPC200 OPC26OVP OPC260TP OPC260WP OPC26OSPues. photosensor phototransistor Photosensor OPC200 PDF

    DC4403

    Abstract: No abstract text available
    Text: P ^ p i GEC P L E S S E Y DS3412-1.2 DC4400 Series SILICON NITRIDE CHIP CAPACITORS A range of Metal/Silicon-Nitride/Silicon MNS chip capacitors which compare extremely favourably with their ceram ic counterparts. Nitride dielectric ensures very low loss and excellent


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    DS3412-1 DC4400 50ppm/Â 18GHz DC4403 PDF

    Untitled

    Abstract: No abstract text available
    Text: Tantalum on Silicon Chip Resistors SFX: High Density/High Value The SFX series are single, high value, 1 megQ to 20 megQ, tantalum nitride on silicon chip resistors in a 40 x 40 mil. size. The capability for extremely fine-line etching on the smooth silicon surface allows the defin­


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    il-Std-883) PDF