SILICON P CHANNEL MOS FET J 350 Search Results

SILICON P CHANNEL MOS FET J 350 Result Highlights (5)

Part	Manufacturer	Description
PQU650-12P	Murata Manufacturing Co Ltd	AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
XPJ1R004PB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL
TK4K1A60F	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS

SILICON P CHANNEL MOS FET J 350 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
A2253 Abstract: 2sk18 Text: 2SK1820-01 L,S FUJI POWER M OS-FET N-CHANNEL SILICON POWER MOS-FET • Features p SERIES j j ■ Outline Drawings • High speed switching • Low on-resistance • No ¡secondary breakdown • Low driving power • High voltage • V cse = ± 3 0 V Gurantee	OCR Scan	2SK1820-01 A2253 2sk18	PDF
HAT1047R Abstract: HAT1047RJ Text: HAT1047R, HAT1047RJ Silicon P Channel Power MOS FET High Speed Power Switching REJ03G0074-0500Z Previous ADE-208-1545D(Z Rev.5.00 Aug.27.2003 Features • • • • For Automotive Application (at Type Code "J") Low on-resistance Capable of –4.5 V gate drive	Original	HAT1047R, HAT1047RJ REJ03G0074-0500Z ADE-208-1545D HAT1047R HAT1047RJ	PDF
SIPMOS Abstract: 2SK1509 Text: 2SK1509 S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET p • Features S E R IE S j j j Outline Drawings • High cu rren t • Low n o-resistance • N o secondary b reakd ow n • Low driving p ow er • High fo rw a rd T ran scon d u ctan ce	OCR Scan	2SK1509 03j6T O-22QAB SC-46 SIPMOS	PDF
2SK 1110 Abstract: hd1-M -DC5V Text: 2 S K 1 8 1 7 -M S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET _ TTT - r - l l i • Features ^ S E R I E S Outline Drawings • High current • Low no-resistance	OCR Scan	2SK1817-M A2-247 2SK 1110 hd1-M -DC5V	PDF
a2231 Abstract: ups electrical symbols schematic symbols UPS 2SK1549 Text: 2SK1549 S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET F-I SERIES • Features O utline D raw ings • High speed sw itching • Low on-resistance • Low driving p o w er • High voltage ■ A pplications • Sw itch in g regulators	OCR Scan	2SK1549 A2-231 a2231 ups electrical symbols schematic symbols UPS 2SK1549	PDF
2SK957-M Abstract: No abstract text available Text: 2SK957-M S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET F-II SERIES • Outline Drawings ■ Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V gss = ± 3 0 V Guarantee	OCR Scan	2SK957-M SC-67 40Vds A2-60 100ms	PDF
2SK957-M Abstract: No abstract text available Text: 2SK957-M S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET F-II SER IES • Outline Drawings ■ Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V gss = ± 3 0 V Guarantee	OCR Scan	2SK957-M SC-67 40nce A2-60 100ms	PDF
A2127 Abstract: cnc schematic 2SK1085-M 1085m Text: 2 S K 1 0 8 5 -M S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET F - I I I S E R I E S • Features • High current • Low on-resistance • No secondary breakdown • Low driving power • High forward Transconductance ■A pplications	OCR Scan	2SK1085-M A2127 cnc schematic 2SK1085-M 1085m	PDF
cnc schematic Abstract: 387-M 2sk mosfet Text: 2 S K 1 3 8 7 -M S IP M O S F U J I P O W E R M O S -F E T IM-CHANNEL SILICON POWER MOS-FET F-III SERIES • Outline Drawings ■ Features • High current • L ow on-resistance • No secondary b reakd ow n • Low driving p o w e r • High fo rw ard T ran scon d u ctan ce	OCR Scan	2SK1387-M SC-67 cnc schematic 387-M 2sk mosfet	PDF
APC UPS es 500 CIRCUIT DIAGRAM Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212 Text: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.	OCR Scan	ADE-408 50502C APC UPS es 500 CIRCUIT DIAGRAM sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212	PDF
Untitled Abstract: No abstract text available Text: < Silicon RF Power MOS FET Discrete > RD02LUS2 RoHS Compliance, Silicon MOSFET Power Transistor 470MHz,2W OUTLINE DRAWING DESCRIPTION RD02LUS2 is a MOS FET type transistor specifically 4.4 +/-0.1 designed for VHF/UHF RF amplifiers applications. T YPE N AM E	Original	RD02LUS2 470MHz RD02LUS2 15dBTyp 470MHz 18dBTyp	PDF
hitachi mosfet power amplifier audio application Abstract: 2SK215 equivalent PM4550C 2sd667 2sb647 2SD667 equivalent 2SJ99 K429 HITACHI 2SJ56 k399 Hitachi 2sk176 2sj56 Text: APPLICATION NOTE 1-9 Pov/er MOS FET • ' Bo* 3 V•? * ¿ 'S r ^ m is y 701 S ! Reo N o 64 1688 07 P O BO X 1194. R A N D tíU R G , 2 1 2 5 M F K E N T H O US E D O V E R S T R E E T . R A N D B U R G T V L , 21 9 4 0 1 1 7 8 9 1 4 0 0 /2 T E L E X 4 -2 0 4 5 2 F A X 1 0 1 1 )7 8 7 0 2 6 3	OCR Scan	RE79-24 hitachi mosfet power amplifier audio application 2SK215 equivalent PM4550C 2sd667 2sb647 2SD667 equivalent 2SJ99 K429 HITACHI 2SJ56 k399 Hitachi 2sk176 2sj56	PDF
MAR 544 MOSFET TRANSISTOR Abstract: J 6920 FET MAR 740 MOSFET TRANSISTOR LA 7814 RD70HVF 7907 mitsubishi RD70HVF1 7386 mos transistor d 2689 MOSFET 2095 transistor Text: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING Revision date:4th/Mar/02 MITSUBISHI RF POWER MOS FET ELHTROSTATIC SENSITIVE DEVICES RD70HVF1 Silicon MOSFET Power Transistor,! 75MHz70W 520MHz50W DESCRIPTION OUTLINE DRAWING RD70HVF1 is a MOS FET type transistor specifically	OCR Scan	4th/Mar/02 RD70HVF1 75MHz70W 520MHz50W RD70HVF1 175MHz 520MHz MAR 544 MOSFET TRANSISTOR J 6920 FET MAR 740 MOSFET TRANSISTOR LA 7814 RD70HVF 7907 mitsubishi 7386 mos transistor d 2689 MOSFET 2095 transistor	PDF
hd 9729 Abstract: 2SK2973 45980 78268 75458 75182 0L sot-89 944 SOT-89 Text: MITSUBISHI RF POWER MOS FET 2SK2973 SILICON MOS FET TYPE DESCRIPTION 2SK2973 ¡s a MOS FET type transistor specifically designed for OUTLINE DRAWING Dimensions in mm VHF/UHF power amplifiers applications. 1.5±0.1 FEATURES • High power gain:Gpe^13dB @ VDD-9.6V ,f"450MHz, Pin=17dBm	OCR Scan	2SK2973 450MHz, 17dBm OT-89 OT-89 hd 9729 2SK2973 45980 78268 75458 75182 0L sot-89 944 SOT-89	PDF

Untitled Abstract: No abstract text available Text: MITSUBISHI RF POWER MOS FET ATTENTION OBSERVE PRECAUTIONS FOR HANDLING Revision date:20th/Nov/02 ELETROSTATTC SENSITIVE DEVICES RD30HVF1 Silicon MOSFET Power Transistor,175MHz 30W DESCRIPTION OUTLINE DRAWING 22. 00 RD30HVF1 is a MOS FET type transistor specifically designed for	OCR Scan	/Nov/02 RD30HVF1 175MHz RD30HVF1 l75MHz	PDF
j 6815 transistor Abstract: TRANSISTOR J 6815 EQUIVALENT C 5763 transistor transistor M 9718 5609 transistor 4082 mitsubishi 9622 transistor 4303 sot89 8948 780-4 transistor Text: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES MITSUBISHI RF POWER MOS FET Revision date:26 /Feb.’02 RD00HVS1 Silicon MOSFET Power Transistor 175MHz,0.5W DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications .	OCR Scan	RD00HVS1 175MHz RD00HVS1 175MHz 48MAX OT-89 j 6815 transistor TRANSISTOR J 6815 EQUIVALENT C 5763 transistor transistor M 9718 5609 transistor 4082 mitsubishi 9622 transistor 4303 sot89 8948 780-4 transistor	PDF
lv 5682 Abstract: mar 835 mosfet MAS 560 ag TRANSISTOR D 5702 RD60HUF1 MOSFET, 3077 transistor k 2837 Text: ATTENTION OBSERVE PRECAUTIONS 1'OR HANDLING Revision date: J 2th/M ar.;02 MITSUBISHI RF POW ER MOS FET h le x ro s ta tic SENSITIVE DEVÏCES RD60HUF1 Silicon MOSFET Power Transistor, 520M Hz 60W DESCRIPTION OUTLINE DRAW ING RD60HUF1 is a MOS FET type transistor specifically	OCR Scan	RD60HUF1 RD60HUF1 lv 5682 mar 835 mosfet MAS 560 ag TRANSISTOR D 5702 MOSFET, 3077 transistor k 2837	PDF
transistor rf m 9860 Abstract: equivalent transistor c 4793 mosfet 4459 C 5763 transistor transistor c 4793 transistor 5763 transistor 17556 17556 transistor 17853 mosfet IC 4490 Text: -. MITSUBISHI RF POWER MOS FET ATTENTION OBSERVE PRECAUTIONS FOR HANDLING «ion date: I S ' V N o v . ’M ELETROSTATIC SENSITIVE DEVICES , O H X J F X Silicon MOSFET Power Transistor,520MHz 30W DESCRIPTION O U T L IN E D R A W IN G RD30HUF1 is a MOS FET type transistor specifically designed for	OCR Scan	520MHz RD30HUF1 520MHz 25deg Jun008 RD30HUF1 transistor rf m 9860 equivalent transistor c 4793 mosfet 4459 C 5763 transistor transistor c 4793 transistor 5763 transistor 17556 17556 transistor 17853 mosfet IC 4490	PDF
transistor 16933 Abstract: No abstract text available Text: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES Revision date:25th/Nov.’02 MITSUBISHI RF POWER MOS FET RD01MUS1 Silicon MOSFET Power Transistor 520MHz,7.2V,lW DESCRIPTION RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.	OCR Scan	25th/Nov. RD01MUS1 520MHz RD01MUS1 520MHz 25deg transistor 16933	PDF
blanking Pulse generator circuit Abstract: 14 pin ic circuit diagram MIP153 Pulse generator circuit 14 pin LATCH IC ic pin diagram ic 14 pin with function Latch Over current Protection "Intelligent Power Devices" 18 PIN IC for power supply Text: Panasonic In telligent Power D e v ic e s IPDs MIP153 Silicon MOS 1C • Features • Single chip IC with high breakdown voltage power MOS FET and CMOS control circuit • Worldwide input (85 to 274VAC) possible • Over-voltage protection at secondary section, pulse by pulse over	OCR Scan	MIP153 274VAC) blanking Pulse generator circuit 14 pin ic circuit diagram MIP153 Pulse generator circuit 14 pin LATCH IC ic pin diagram ic 14 pin with function Latch Over current Protection "Intelligent Power Devices" 18 PIN IC for power supply	PDF
2SK1845 Abstract: 3sk85 2SK408 equivalent 3SK1 3sk156 3sk217 3SK228 3SK103 2sc464 2SC3511 Text: HITACHI Ultra High Frequency Devices DATA BOOK H IT A C H I ADE-41 CONTENTS • GENERAL INFORMATION. . . . . . 5 Si Bipolar Transistors.	OCR Scan	ADE-41 D-8013 2SK1845 3sk85 2SK408 equivalent 3SK1 3sk156 3sk217 3SK228 3SK103 2sc464 2SC3511	PDF
Untitled Abstract: No abstract text available Text: PM45100K Silicon N-Channel Power MOS FET Module HITACHI Application High Speed Power Switching Features • • • • • • • • Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain	OCR Scan	PM45100K PM451	PDF
C2545 Abstract: No abstract text available Text: Panasonic Intelligent Power Devices IPDs MIP153 Silicon MOS 1C • Features • Single chip IC with high breakdown voltage power MOS FET and CMOS control circuit • Worldwide input (85 to 274VAC) possible • Over-voltage protection at secondary section, pulse by pulse over	OCR Scan	MIP153 274VAC) C2545	PDF
MP6801 Abstract: No abstract text available Text: TOSHIBA MP6801 TOSHIBA POWER MOS FET MODULE SILICON N & P CHANNEL MOS TYPE L2- tt-MOS1V 6 IN 1 M P6801 HIGH POWER, HIGH SPEED SWITCHING APPLICATIONS. 3-PHASE MOTOR DRIVE AND BIPOLAR DRIVE OF PULSE MOTOR. INDUSTRIAL APPLICATIONS Unit in mm 31.51-0.2 • •	OCR Scan	MP6801 P6801 12Pin) MP6801	PDF

SILICON P CHANNEL MOS FET J 350 Search Results

SILICON P CHANNEL MOS FET J 350 Result Highlights (5)

SILICON P CHANNEL MOS FET J 350 Datasheets Context Search

A2253

HAT1047R

SIPMOS

2SK 1110

a2231

2SK957-M

2SK957-M

A2127

cnc schematic

APC UPS es 500 CIRCUIT DIAGRAM

Untitled

hitachi mosfet power amplifier audio application

MAR 544 MOSFET TRANSISTOR

hd 9729

Untitled

j 6815 transistor

lv 5682

transistor rf m 9860

transistor 16933

blanking Pulse generator circuit

2SK1845

Untitled

C2545

MP6801