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    SILICON SUBMOUNT Search Results

    SILICON SUBMOUNT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    P104 Coilcraft Inc Silicon Controlled Rectifier, Visit Coilcraft Inc
    5962-8757701RA Renesas Electronics Corporation Microcircuit, CMOS, Octal Bus Transceiver, Monolithic Silicon Visit Renesas Electronics Corporation
    HXT45430-DNU Renesas Electronics Corporation 112Gb/s PAM4 Silicon Photonic Modulator Driver Visit Renesas Electronics Corporation

    SILICON SUBMOUNT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TXPI 1065 Multi-mode Silicon PIN Detector With ST Style Submount DESCRIPTION FEATURES This is a high speed Silicon detector optimized for fiber optic applications requiring high Responsivity and a fast response time. ” High Responsivity ” High Electrical Bandwidth


    Original     		PDF

    MTC280LS-UV

    Abstract: No abstract text available
    Text: Ultraviolet LED Chip Product No: M T C280LS-UV Peak Emission Wavelength: 280nm The MTC280LS-UV UV chip on large silicon submount is specifically designed for applications requiring high radiant power output and custom packaging solutions. FEATURES APPLICATIONS


    Original     		PDF C280LS-UV 280nm MTC280LS-UV 1270um 1470um

    Untitled

    Abstract: No abstract text available
    Text: PHOTONIC High Speed Silicon Photodiode, Photoconductive chip on submount Type PDB-C116A DETECTORS INC. PACKAGE DIMENSIONS INCH [mm] METALIZATION THIS SIDE C L .040 [1.02] .060 [1.52] PD I CL .030 [0.76] ANODE METALIZATION CATHODE METALIZATION PHOTODIODE .080 [2.03]


    Original     		PDF PDB-C116A PDB-C116A 100-PDB-C116A

    Untitled

    Abstract: No abstract text available
    Text: PHOTONIC High Speed Silicon Photodiode, Photoconductive chip on submount Type PDB-C116A DETECTORS INC. PACKAGE DIMENSIONS INCH [mm] .060 [1.52] PD CL .030 [0.76] I METALIZATION THIS SIDE C L .040 [1.02] ANODE METALIZATION CATHODE METALIZATION PHOTODIODE .080 [2.03]


    Original     		PDF PDB-C116A 100-PDB-C116A

    Untitled

    Abstract: No abstract text available
    Text: Ultraviolet LED Chip Product No: M T C 265LS-U V Peak Emission Wavelength: 265nm The MTC265LS-UV UV chip on large silicon submount is specifically designed for applications requiring high radiant power output and custom packaging solutions. FEATURES APPLICATIONS


    Original     		PDF 265LS-U 265nm MTC265LS-UV 1270um 1470um 65LS-UV

    Untitled

    Abstract: No abstract text available
    Text: Ultraviolet LED Chip Product No: M T C 265SS -U V Peak Emission Wavelength: 265nm The MTC265SS-UV UV chip on large silicon submount is specifically designed for applications requiring high radiant power output and custom packaging solutions. FEATURES APPLICATIONS


    Original     		PDF 265SS 265nm MTC265SS-UV 870um 770um 65SS-UV

    MTC325LS-UV

    Abstract: No abstract text available
    Text: Ultraviolet LED Chip Product No: M T C 325LS -UV Peak Emission Wavelength: 325 nm The MTC325LS-UV UV chip on large silicon submount is specifically designed for applications requiring high radiant power output and custom packaging solutions. FEATURES APPLICATIONS


    Original     		PDF 325LS MTC325LS-UV 1270um 1470um

    MTC340LS-UV

    Abstract: No abstract text available
    Text: Ultraviolet LED Chip Product No: M T C 340LS-UV Peak Emission Wavelength: 340 nm The MTC340LS-UV UV chip on large silicon submount is specifically designed for applications requiring high radiant power output and custom packaging solutions. FEATURES APPLICATIONS


    Original     		PDF 340LS-UV MTC340LS-UV 1270um 1470um 340LS

    MTC325SS-UV

    Abstract: No abstract text available
    Text: Ultraviolet LED Chip Product No: M T C 325SS-UV Peak Emission Wavelength: 325 nm The MTC325SS-UV UV chip on large silicon submount is specifically designed for applications requiring high radiant power output and custom packaging solutions. FEATURES APPLICATIONS


    Original     		PDF 325SS-UV MTC325SS-UV 870um 770um 325SS

    MTC310LS-UV

    Abstract: UV LED 310 nm
    Text: Ultraviolet LED Chip Product No: M T C 310LS -UV Peak Emission Wavelength: 310 nm The MTC310LS-UV UV chip on large silicon submount is specifically designed for applications requiring high radiant power output and custom packaging solutions. FEATURES APPLICATIONS


    Original     		PDF 310LS MTC310LS-UV 1270um 1470um UV LED 310 nm

    MTC340SS-UV

    Abstract: No abstract text available
    Text: Ultraviolet LED Chip Product No: M T C 340SS-UV Peak Emission Wavelength: 340 nm The MTC340SS-UV UV chip on large silicon submount is specifically designed for applications requiring high radiant power output and custom packaging solutions. FEATURES APPLICATIONS


    Original     		PDF 340SS-UV MTC340SS-UV 870um 770um 340SS

    MTC280SS-UV

    Abstract: UV LED 280NM
    Text: Ultraviolet LED Chip Product No: M T C 280SS-UV Peak Emission Wavelength: 280nm The MTC280SS-UV UV chip on low profile silicon submount is specifically designed for applications requiring high radiant power output and custom packaging solutions. FEATURES APPLICATIONS


    Original     		PDF 280SS-UV 280nm MTC280SS-UV 870um 770um C280SS-UV UV LED 280NM

    Photodiode cost sheet

    Abstract: die-attach cl 1100 optical fiber detector photoconductive Photodiode submount submount PD submount
    Text: PHOTONIC High Speed Silicon Photodiode, Photoconductive chip on submount Type PDB-C116 DETECTORS INC. PACKAGE DIMENSIONS INCH [mm] METALIZATION THIS SIDE C L .040 [1.02] .060 [1.52] PD I CL .030 [0.76] NOTE: PHOTODIODE CHIP TO BE EUTECTICALLY DIE ATTACHED TO SUBMOUNT CERAMIC


    Original     		PDF PDB-C116 PDB-C116 100-PDB-C116 Photodiode cost sheet die-attach cl 1100 optical fiber detector photoconductive Photodiode submount submount PD submount

    photodiode demodulation

    Abstract: gold metal detectors gold detectors circuit bond wire gold fiber optic detector fibre optic laser ceramic package PDB-C122
    Text: PHOTONIC Silicon Photodiode, Blue Enhanced Photoconductive Monitor Photodiode Type PDB-C122 DETECTORS INC. PACKAGE DIMENSIONS INCH [mm] GOLD METAL THIS SIDE CL .040 [1.02] ACTIVE AREA CL .030 [0.76] .060 [1.52] ANODE METALIZATION TOP VIEW CATHODE METALIZATION


    Original     		PDF PDB-C122 PDB-C122 100-PDB-C122 photodiode demodulation gold metal detectors gold detectors circuit bond wire gold fiber optic detector fibre optic laser ceramic package

    Untitled

    Abstract: No abstract text available
    Text: PHOTONIC Silicon Photodiode, Blue Enhanced Photoconductive Monitor Photodiode Type PDB-C122 DETECTORS INC. PACKAGE DIMENSIONS INCH [mm] GOLD METAL THIS SIDE CL .040 [1.02] ACTIVE AREA C L .030 [0.76] .060 [1.52] ANODE METALIZATION TOP VIEW CATHODE METALIZATION


    Original     		PDF PDB-C122 PDB-C122 100-PDB-C122

    SAE230VX

    Abstract: SAE500VX SAE500VS SAE500 avalanche photodiode
    Text: Silicon Avalanche Photodiode SAE-Series Red-Enhanced DESCRIPTION The SAE500VS epitaxial avalanche photodiode is a general purpose APD with high responsivity and extremely fast rise and fall times through out the 400 to 1000 nm wavelength range. The peak responsivity


    Original     		PDF SAE500VS SAE500VX SAE230VX SAE500 avalanche photodiode

    PDB-C122

    Abstract: No abstract text available
    Text: Blue Enhanced Photoconductive Silicon Photodiode PDB-C122 PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] GOLD METAL THIS SIDE .080 [2.03] .040 [1.02] .060 [1.52] .030 [0.76] CATHODE ANODE .020 [0.51] .015 [0.38] .008 [0.20] MAX ANODE CATHODE .050 [1.27]


    Original     		PDF PDB-C122 PDB-C122

    Untitled

    Abstract: No abstract text available
    Text: Direct Attach DA3547 LEDs CxxxDA3547-Sxxx00 Data Sheet Cree’s Direct Attach DA3547 LEDs are the next generation of solid-state LED emitters that combine highly eficient InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value


    Original     		PDF DA3547â CxxxDA3547-Sxxx00 DA3547

    cree

    Abstract: DA3547
    Text: Direct Attach DA3547 LEDs CxxxDA3547-Sxxx00-2 Data Sheet Cree’s Direct Attach DA3547 LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value


    Original     		PDF DA3547TM CxxxDA3547-Sxxx00-2 DA3547 cree

    DA2432

    Abstract: cxxxd DA243 C470DA2432-0701-2
    Text: Direct Attach DA2432 LEDs CxxxDA2432-Sxxx00-2 Data Sheet Cree’s Direct Attach DA2432 LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value


    Original     		PDF DA2432TM CxxxDA2432-Sxxx00-2 DA2432 cxxxd DA243 C470DA2432-0701-2

    DA3547

    Abstract: AuSn eutectic ausn submount
    Text: Direct Attach DA3547 LEDs CxxxDA3547-Sxxx00 Data Sheet Cree’s Direct Attach DA3547 LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value


    Original     		PDF DA3547TM CxxxDA3547-Sxxx00 DA3547 AuSn eutectic ausn submount

    Untitled

    Abstract: No abstract text available
    Text: Direct Attach DA2432 LEDs CxxxDA2432-Sxxx00-2 Data Sheet Cree’s Direct Attach DA2432 LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value for


    Original     		PDF DA2432â CxxxDA2432-Sxxx00-2 DA2432

    hte 2642

    Abstract: InGaas PIN photodiode, 1550 sensitivity HTE-2642 C30642E C30642 PerkinElmer 1700 ESILICON C30641 C30665 C30619
    Text: C30619, C30641, C30642, C30665 Figure 9. Package D15: TO-5 with Glass Window. Ordering Guide C30 # # # L - X X X TE-Cooler Option: TC: DTC: 1-stage TE cooler 2-stage TE cooler Not yet available for C30665 Window Option: E: G: Silicon Glass (See below for availability)


    Original     		PDF C30619, C30641, C30642, C30665 C30665) C30619 C30641 C30642 ISO-9001 hte 2642 InGaas PIN photodiode, 1550 sensitivity HTE-2642 C30642E C30642 PerkinElmer 1700 ESILICON C30665 C30619

    MC2004

    Abstract: MC2004-5DIEW MC2004-5DIE FALCON 250-1002 MC2045 photodetector pin 155mbps
    Text: Microcosm ‘TZ’ Amplifier IC MC2004-5 Low-Cost Transimpedance Amplifier IC for Fiber Optic Applications at 155Mbps Main Features: General Description: q The MC2004-5 is a high performance linear transimpedance amplifier available in die form. It is designed to be mounted with a silicon or InGaAs


    Original     		PDF MC2004-5 155Mbps MC2004-5 120MHz/ 155Mbps. -34dBm -11dBm MC2004-5DIE MC2004-5DIEW MC2004 MC2004-5DIEW MC2004-5DIE FALCON 250-1002 MC2045 photodetector pin 155mbps