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    SILICON TRANSISTOR MANUAL Search Results

    SILICON TRANSISTOR MANUAL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SILICON TRANSISTOR MANUAL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IC-3479

    Abstract: IC-8359 pa1428a uPA1428 transistor array high speed uPA1428AH IEI-1213 PA1428 MF-1134 PA1428AH
    Text: DATA SHEET SILICON TRANSISTOR ARRAY µPA1428A NPN SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1428A is NPN silicon epitaxial Darlington Power (in millimeters) Transistor Array that built in Surge Absorber 4 circuits


    Original     		PDF PA1428A PA1428A PA1428AH IC-3479 IC-8359 uPA1428 transistor array high speed uPA1428AH IEI-1213 PA1428 MF-1134 PA1428AH

    PA1476

    Abstract: transistor b 1202 uPA1476 uPA1476H nec UPA1476H NEC SIP pa*476 IEI-1213 MEI-1202 MF-1134
    Text: DATA SHEET SILICON TRANSISTOR ARRAY µPA1476 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1476 is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in 4 circuits designed


    Original     		PDF PA1476 PA1476 PA1476H transistor b 1202 uPA1476 uPA1476H nec UPA1476H NEC SIP pa*476 IEI-1213 MEI-1202 MF-1134

    ic 8705

    Abstract: IC-8705 nec 8705 IC-3482 PA1436AH IEI-1209 UPA1436AH pa1436 transistor array high speed IEI-1213
    Text: DATA SHEET SILICON TRANSISTOR ARRAY µPA1436A NPN SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1436A is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in 4 circuits designed


    Original     		PDF PA1436A PA1436A PA1436AH ic 8705 IC-8705 nec 8705 IC-3482 PA1436AH IEI-1209 UPA1436AH pa1436 transistor array high speed IEI-1213

    DARLINGTON MANUAL

    Abstract: pa1436ah uPA1436H pa1436 iei-1209 DARLINGTON TRANSISTOR ARRAY MF-1134 npn darlington array IEI-1213 MEI-1202
    Text: DATA SHEET SILICON TRANSISTOR ARRAY µPA1436 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1436 is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in 4 circuits designed


    Original     		PDF PA1436 PA1436 PA1436H DARLINGTON MANUAL pa1436ah uPA1436H iei-1209 DARLINGTON TRANSISTOR ARRAY MF-1134 npn darlington array IEI-1213 MEI-1202

    IC-3523

    Abstract: IC-6342 MEI-1202 MF-1134 IEI-1213 power transistor array
    Text: DATA SHEET SILICON TRANSISTOR ARRAY µPA1458 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1458 is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in Surge Absorber and


    Original     		PDF PA1458 PA1458 PA1458H IC-3523 IC-6342 MEI-1202 MF-1134 IEI-1213 power transistor array

    uPA1456H

    Abstract: IC-3521 PA1456 IC-6340 IEI-1213 MEI-1202 MF-1134 DARLINGTON TRANSISTOR ARRAY
    Text: DATA SHEET SILICON TRANSISTOR ARRAY µPA1456 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1456 is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in 4 circuits designed


    Original     		PDF PA1456 PA1456 PA1456H uPA1456H IC-3521 IC-6340 IEI-1213 MEI-1202 MF-1134 DARLINGTON TRANSISTOR ARRAY

    pa1437

    Abstract: IC-3516 pnp DARLINGTON TRANSISTOR ARRAY IEI-1209 pnp darlington array IEI-1213 MEI-1202 MF-1134 PA1437H power transistor array
    Text: DATA SHEET SILICON TRANSISTOR ARRAY µPA1437 PNP SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µ PA1437 is PNP silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in 4 circuits designed


    Original     		PDF PA1437 PA1437 PA1437H IC-3516 pnp DARLINGTON TRANSISTOR ARRAY IEI-1209 pnp darlington array IEI-1213 MEI-1202 MF-1134 PA1437H power transistor array

    IC-6634

    Abstract: PA1478 MEI-1202 MF-1134 IEI-1213 2di50 DARLINGTON TRANSISTOR ARRAY
    Text: DATA SHEET SILICON TRANSISTOR ARRAY µPA1478 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1478 is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in Surge Absorber and


    Original     		PDF PA1478 PA1478 PA1478H IC-6634 MEI-1202 MF-1134 IEI-1213 2di50 DARLINGTON TRANSISTOR ARRAY

    IC-6339

    Abstract: PA1453 IEI-1213 MEI-1202 MF-1134 ic 926
    Text: DATA SHEET SILICON TRANSISTOR ARRAY µPA1453 PNP SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µ PA1453 is PNP silicon epitaxial Power Transistor in millimeters Array that built in 4 circuits designed for driving solenoid,


    Original     		PDF PA1453 PA1453 PA1453H IC-6339 IEI-1213 MEI-1202 MF-1134 ic 926

    d1117

    Abstract: TRANSISTOR 2202 BL 2SA1988 C10535E C10943X MEI-1202 MP-88
    Text: DATA SHEET Silicon Power Transistor 2SA1988 PNP SILICON TRANSISTOR POWER AMPLIFIER INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SA1988 is PNP Silicon Power Transistor that designed for audio frequency power amplifier. 1.0 4 20.5MAX. 5.0 • High Voltage VCEO = −200 V


    Original     		PDF 2SA1988 2SA1988 MP-88 d1117 TRANSISTOR 2202 BL C10535E C10943X MEI-1202 MP-88

    IC-3520

    Abstract: uPA1454H PA1454 IEI-1213 MEI-1202 MF-1134 iei-1209
    Text: DATA SHEET SILICON TRANSISTOR ARRAY µPA1454 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1454 is NPN silicon epitaxial Power Transistor in millimeters Array that built in 4 circuits designed for driving solenoid,


    Original     		PDF PA1454 PA1454 PA1454H IC-3520 uPA1454H IEI-1213 MEI-1202 MF-1134 iei-1209

    PA1434H

    Abstract: iei-1209 pa1434 IEI-1213 MEI-1202 MF-1134
    Text: DATA SHEET SILICON TRANSISTOR ARRAY µPA1434 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1434 is NPN silicon epitaxial Power Transistor in millimeters Array that built in 4 circuits designed for driving solenoid,


    Original     		PDF PA1434 PA1434 PA1434H PA1434H iei-1209 IEI-1213 MEI-1202 MF-1134

    nec 817

    Abstract: TRANSISTOR R46 2SC4095 transistor r47
    Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4095 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4095 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band.


    Original     		PDF 2SC4095 2SC4095 nec 817 TRANSISTOR R46 transistor r47

    SOT23 JEDEC standard orientation pad size

    Abstract: sot-23 npn marking code VD BC237 p2f sot-23 transistor 2N5458
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon Epitaxial Transistor PZT2907AT1 Motorola Preferred Device This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is


    Original     		PDF OT-223 PZT2222AT1 PZT2907AT1 inch/1000 PZT2907AT3 inch/4000 uni218A MSC1621T1 SOT23 JEDEC standard orientation pad size sot-23 npn marking code VD BC237 p2f sot-23 transistor 2N5458

    BFr pnp transistor

    Abstract: zt751 PZT651T1 PZT751T1G
    Text: PZT751T1G PNP Silicon Planar Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.


    Original     		PDF PZT751T1G OT-223 OT--223 PZT651T1 PZT751T1/D BFr pnp transistor zt751 PZT651T1 PZT751T1G

    PT 6062A

    Abstract: EL1202 1B2 zener diode 2SD1702 IEI-1213 MEI-1202 MF-1134 1702 NPN transistor
    Text: DATA SHEET SILICON TRANSISTOR 2SD1702 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2S D 17 02 is NPN silicon epitaxial darlington transistor designed for pulse m otor, printer driver, solenoid driver. FEATURES PACKAGE DIMENSIONS in millimeters


    OCR Scan     		PDF 2SD1702 2SD1702 PT 6062A EL1202 1B2 zener diode IEI-1213 MEI-1202 MF-1134 1702 NPN transistor

    iei-1209

    Abstract: PA1428 IC-6633 IEI-1213 MEI-1202 MF-1134 NEC RELAY DARLINGTON TRANSISTOR ARRAY
    Text: DATA SHEET SILICON TRANSISTOR ARRAY /¿PA1428 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION The/xPA1428 is NPN silicon epitaxial D arlington Power T ransistor A rray th at b u ilt in Surge Absorber 4 circuits


    OCR Scan     		PDF uPA1428 The/xPA1428 PA1428H IEI-1209) iei-1209 PA1428 IC-6633 IEI-1213 MEI-1202 MF-1134 NEC RELAY DARLINGTON TRANSISTOR ARRAY

    marking tr

    Abstract: 2SD1699 IEI-1213 MEI-1202 MF-1134 L1207
    Text: DATA SHEET SILICON TRANSISTOR 2SD1699 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2S D 16 99 is NPN silicon epitaxial darlington transistor designed for pulse m otor, printer driver, solenoid driver. Circuits. FEATURES • High DC Current gain.


    OCR Scan     		PDF 2SD1699 2SD1699 marking tr IEI-1213 MEI-1202 MF-1134 L1207

    NEC IC D 553 C

    Abstract: nec d 588 nec 817 D 5038 transistor PE 7058 TRANSISTOR R46 p10367 transistor NEC D 586 NEC D 586 RIO R47
    Text: DATA SHEET SILICON TRANSISTOR 2SC4095 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4095 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal am plifiers from VHF band to UHF band.


    OCR Scan     		PDF 2SC4095 2SC4095 NEC IC D 553 C nec d 588 nec 817 D 5038 transistor PE 7058 TRANSISTOR R46 p10367 transistor NEC D 586 NEC D 586 RIO R47

    2sc3618 application

    Abstract: 2SC3618 IEI-1213 MEI-1202 MF-1134
    Text: DATA SHEET SILICON TRANSISTOR 2SC3618 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION 2SC3618 is designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits. FEATURE PACKAGE DIMENSIONS •


    OCR Scan     		PDF 2SC3618 2SC3618 2sc3618 application IEI-1213 MEI-1202 MF-1134

    IEI-1213

    Abstract: 2SD999 MEI-1202 MF-1134 SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL 2SB798 5493A IE1-1209 nec transistor selection guide
    Text: DATA SHEET SILICON TRANSISTOR 2SD999 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2SD999 is designed for audio frequency power amplifier application, especially in Hybrid Integrated Circuits. FEATURES • World Standard Miniature Package


    OCR Scan     		PDF 2SD999 2SD999 OT-89 2SB798 IEI-1213 MEI-1202 MF-1134 SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL 2SB798 5493A IE1-1209 nec transistor selection guide

    MARKING J1A

    Abstract: 2SA1412-Z 2SC3631-Z MEI-1202
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SA1412-Z PNP SILICON TRIPLE DIFFUSED TRANSISTOR MP-3 DESCRIPTION 2SA1412-Z is designed for High Voltage Switching, especially PACKAGE DIMENSIONS in millimeters in Hybrid Integrated Circuits. FEATURES • High Voltage :


    OCR Scan     		PDF 2SA1412-Z 2SA1412-Z 2SC3631-Z IEI-1209) MARKING J1A 2SC3631-Z MEI-1202

    5490A

    Abstract: B 1359 970-900 2SB798 2SD999 IEI-1213 MEI-1202 MF-1134 marking dk sot-89
    Text: DATA SHEET • NEC SILICON TRANSISTOR 2SB798 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2SB798 is designed for audio frequency power amplifier application, especially in Hybrid Integrated Circuits. FEATURES • World Standard Miniature Package


    OCR Scan     		PDF 2SB798 2SD999 5490A B 1359 970-900 2SD999 IEI-1213 MEI-1202 MF-1134 marking dk sot-89

    TEB-1003

    Abstract: 2SB768 2SD1033 MEI-1202 2sb768 nec MEI Semiconductors
    Text: ! DATA SHEET N E C ^r SILICON TRANSISTOR 2SB768 PNP SILICON TRIPLE DIFFUSED TRANSISTOR MP-3 DESCRIPTION PACKAGE DIMENSIONS 2SB768 is designed fo r Color TV Vertical Deflection Output, in millimeters especially in Hybrid Integrated Circuits. FEATURES •


    OCR Scan     		PDF 2SB768 2SB768 2SD1033 IEI-1209) TEB-1003 2SD1033 MEI-1202 2sb768 nec MEI Semiconductors