2SB798 Search Results

2SB798 Result Highlights (4)

Part	Manufacturer	Description
2SB798(0)-T1-AZ	Renesas Electronics Corporation	Small Signal Bipolar Transistors
2SB798-T2-AZ	Renesas Electronics Corporation	Small Signal Bipolar Transistors, POMM, /
2SB798-T1-AZ	Renesas Electronics Corporation	Small Signal Bipolar Transistors, POMM, /
2SB798-AZ	Renesas Electronics Corporation	Small Signal Bipolar Transistors, POMM, /

2SB798 Price and Stock

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NEC Electronics Group 2SB798-T1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	2SB798-T1		1,347			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Renesas Electronics Corporation 2SB798(0)-T1-AZ 2SB798 - Small Signal PNP Bipolar Transistors '
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	2SB798(0)-T1-AZ		4,000		1	1 $0.5511 10 $0.5511 100 $0.518 1000 $0.4684 10000 $0.4684	Buy Now
Others 2SB798-T2 INSTOCK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Chip 1 Exchange	2SB798-T2		6,508			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Renesas Electronics Corporation 2SB798-T1 PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A; No. of Elements: 1;
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	2SB798-T1		34			1 - 10 - 100 - 1000 - 10000 -	Get Quote

2SB798 Datasheets (19)

Part	Manufacturer	Description	Datasheet Type	PDF
2SB798	Kexin	PNP Silicon Epitaxial Transistor	Original	PDF
2SB798	NEC	Semiconductor Selection Guide 1995	Original	PDF
2SB798	NEC	Semiconductor Selection Guide	Original	PDF
2SB798	TY Semiconductor	PNP Silicon Epitaxial Transistor - SOT-89	Original	PDF
2SB798	Unisonic Technologies	POWER TRANSISTOR	Original	PDF
2SB798	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SB798	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2SB798	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SB798	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF
2SB798	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SB798	Unknown	The Japanese Transistor Manual 1981	Scan	PDF
2SB798	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SB798	NEC	PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD	Scan	PDF
2SB798	NEC	Silicon Transistor	Scan	PDF

2SB798DK	NEC	PNP Silicon Epitaxial Transistor Power Mini Mold	Scan	PDF
2SB798DL	NEC	PNP Silicon Transistor	Scan	PDF
2SB798DM	NEC	PNP Silicon Epitaxial Transistor Power Mini Mold	Scan	PDF
2SB798-T1	NEC	Silicon Transistor	Scan	PDF
2SB798-T2	NEC	Silicon Transistor	Scan	PDF

2SB798 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
N0201 Abstract: No abstract text available Text: Data Sheet N0201R R07DS0718EJ0100 Rev.1.00 Mar 30, 2012 PNP SILICON EPITAXIAL TRANSISTOR FEATURES •    Complements to N0201S. VCEO = 25 V IC DC = 1.0 A Miniature package SOT-23F (2SB798: Package variation of 3pPoMM) PRODUCT LINEUP Part Number	Original	N0201R R07DS0718EJ0100 N0201S. OT-23F 2SB798: N0201R-T1-AT 3000p/reel PVSF0003ZA-A 0126g N0201	PDF
Untitled Abstract: No abstract text available Text: Product specification 2SB798 Features World standard miniature package:SOT-89 Low collector saturation voltage:VCE sat <-0.4V(IC=-1.0A,IB=-100mA) Excellent DC Current Gain Linearity:hFE=100TYP.(VCE=-10.V,IC=-1.0A) Absolute Maximum Ratings Ta = 25 Parameter	Original	2SB798 OT-89 -100mA) 100TYP.	PDF
Untitled Abstract: No abstract text available Text: UTC 2SB798 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB798 is designed for audio frequency power amplifier applications, especially in Hybrid Integrated Circuits. 1 FEATURES *Low Collector Saturation Voltage: VCE sat < -0.4V (Ic= -1.0A,IB=-100mA )	Original	2SB798 2SB798 -100mA OT-89 QW-R208-020	PDF
transistor SMD DK Abstract: dm SMD MARKING sot-89 smd transistor marking DK marking dk sot-89 TRANSISTOR SMD PNP 1A smd MARKING dk dk SOT89 DM sot-89 TRANSISTOR MARKING DM 2SB798 Text: Transistors SMD Type PNP Silicon Epitaxial Transistor 2SB798 Features World standard miniature package:SOT-89 Low collector saturation voltage:VCE sat <-0.4V(IC=-1.0A,IB=-100mA) Excellent DC Current Gain Linearity:hFE=100TYP.(VCE=-10.V,IC=-1.0A) Absolute Maximum Ratings Ta = 25	Original	2SB798 OT-89 -100mA) 100TYP. transistor SMD DK dm SMD MARKING sot-89 smd transistor marking DK marking dk sot-89 TRANSISTOR SMD PNP 1A smd MARKING dk dk SOT89 DM sot-89 TRANSISTOR MARKING DM 2SB798	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 2SB798 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR  DESCRIPTION The UTC 2SB798 is designed for audio frequency power amplifier applications, especially in Hybrid Integrated Circuits.  FEATURES * Low Collector Saturation Voltage:	Original	2SB798 2SB798 -100mA 2SB798G-x-AB3-R OT-89 QW-R208-020	PDF
dk qw Abstract: 2SB798 Text: UTC 2SB798 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB798 is designed for audio frequency power amplifier applications, especially in Hybrid Integrated Circuits. 1 FEATURES *Low Collector Saturation Voltage: VCE sat < -0.4V (Ic= -1.0A,IB=-100mA )	Original	2SB798 2SB798 -100mA OT-89 QW-R208-020 dk qw	PDF
dk SOT-89 Abstract: dk SOT89 2SB798-L Text: UNISONIC TECHNOLOGIES CO., LTD 2SB798 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION 1 The UTC 2SB798 is designed for audio frequency power amplifier applications, especially in Hybrid Integrated Circuits. FEATURES * Low Collector Saturation Voltage:	Original	2SB798 2SB798 OT-89 -100mA 2SB798L-X-AB3-R 2SB798G-X-AB3-R 2SB798L-X-AB3-R QW-R208-020 dk SOT-89 dk SOT89 2SB798-L	PDF
N0201 Abstract: No abstract text available Text: Data Sheet N0201R R07DS0718EJ0100 Rev.1.00 Mar 30, 2012 PNP SILICON EPITAXIAL TRANSISTOR FEATURES •    Complements to N0201S. VCEO = 25 V IC DC = 1.0 A Miniature package SOT-23F (2SB798: Package variation of 3pPoMM) PRODUCT LINEUP Part Number	Original	N0201R R07DS0718EJ0100 N0201S. OT-23F 2SB798: N0201R-T1-AT 3000p/reel OT-23F PVSF0003ZA-A 0126g N0201	PDF
Untitled Abstract: No abstract text available Text: UNISONICTECHNOLOGIESCO., LTD 2SB798 PNP EPITAXIAL SILICON TRANSISTOR POWER T RAN SI ST OR ̈ DESCRI PT I ON 1 The UTC 2SB798 is designed for audio frequency power amplifier applications, especially in Hybrid Integrated Circuits. ̈ FEAT U RES * Low Collector Saturation Voltage:	Original	2SB798 2SB798 -100mA OT-89 2SB798L-X-AB3-R 2SB798G-X-AB3-R QW-R208-020	PDF
micro servo 9g Abstract: uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518 Text: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call	Original	V20HL, V25HS, V30HL, V30MX, V35HS, V40HL, V50HL, V55PI, X10679EJDV0SG00 micro servo 9g uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518	PDF
alternator diode 1776 B Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)	Original	Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent	PDF
2sk2500 Abstract: UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1 Text: お客様各位カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社	Original	C11178JJCV0IF0012 C11178JJCV0IF MIL-HDBK-217 MILMIL10100 MIL-HDBK-217Fit 2sk2500 UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1	PDF
pa1476h Abstract: pa80c PA1501H pa1437h PA1478H PA1556A pa1428ah PA2981 PA571T PA1556AH Text: CD-ROM版トランジスタ CD-ROM X13769XJ2V0CD00 08−1 トランジスタパッケージ別早見表 • TO-92形トランジスタ V TO–92 CEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674	Original	X13769XJ2V0CD00 2SA1206* 2SC1674 2SA988 2SA992 2SC1841 2SC1845 2SA733 2SA990 2SC945 pa1476h pa80c PA1501H pa1437h PA1478H PA1556A pa1428ah PA2981 PA571T PA1556AH	PDF
uPD16305 Abstract: uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943 Text: Search by Product Name Find tool 1. Click the icon on the tool bar. 2. The find dialog box will be displayed. 3. Input the full product name or part of the product name to Find be located and click . 4. A characteristic table will be displayed if the retrieved product name is clicked.	Original	PD43256A> PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016 PD750104 PD750106 PD750108 uPD16305 uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943	PDF

ta69 Abstract: No abstract text available Text: NEC SILICON TRANSISTOR ELECTRON DEVICE 2SB798 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2SB798 is designed fo r audio frequency power a m plifier application, especially in H yb rid Integrated Circuits. FEATURES PACKAGE DIMENSIONS	OCR Scan	2SB798 2SB798 2SD999 ta69	PDF
n20m Abstract: No abstract text available Text: SILICON TRANSISTOR 2SB798 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DE SC RIPTIO N The 2S 8798 is designed fo r audio frequency pow er a m p lifie r a pp lica tion, especially in H y b rid Integrated Circuits. FE A TU R ES • W orld Standard M inia tu re Package	OCR Scan	2SB798 2SB798 n-20m -l00m -500m n20m	PDF
TFK 082 Abstract: tfk 521 TFK U 111 B tfk 140 / TC ST 1000 2SD999 DA SOT-89 TFK 212 Text: = T — • ^ 5 / — h S ilico n T r a n s is to r 2SD999 m # ^-fi ! mm o f ë M M M J£ W i? E ÿ v * , :£ -tr-y H Ì W Ì g : ) a ì ^ t h Ì i f f l i - S T i 1 'c O 2SB798<Î; n > 7 °'J p< > ? ') § ito 1.5 + 0.1 Î Ê * Î f i * Æ f t (T a =	OCR Scan	2SD999 2SB798< PWS10 OT-89) TFK 082 tfk 521 TFK U 111 B tfk 140 / TC ST 1000 2SD999 DA SOT-89 TFK 212	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET NEC / SILICON TRANSISTOR _ / 2SB798 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2S B798 is designed fo r audio frequency pow er a m p lifie r a pp lica tion, especially in H y b rid Integrated C ircuits. FEATURES PACKAGE DIMENSIONS	OCR Scan	2SB798 2SB798 2SD999 Bas36	PDF
5490A Abstract: B 1359 970-900 2SB798 2SD999 IEI-1213 MEI-1202 MF-1134 marking dk sot-89 Text: DATA SHEET • NEC SILICON TRANSISTOR 2SB798 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2SB798 is designed for audio frequency power amplifier application, especially in Hybrid Integrated Circuits. FEATURES • World Standard Miniature Package	OCR Scan	2SB798 2SD999 5490A B 1359 970-900 2SD999 IEI-1213 MEI-1202 MF-1134 marking dk sot-89	PDF
S490A Abstract: 2SB798 2SD999 Text: 5 s— S • 5 /— K NEC ' > 1 h =7 Silicon T ra n s is to r 2SB798 mm a & v t, ij-ty m m , h ^ c o f g J l ì i è i b i j f f l i i f t a T t c 0 2SD999 Ì a > 7 °'J X > 9 ') T '" t „ 1.5 + 0.1 T a = 25 °C ) III g n iy 9 9 n v 9 =t V -30 V -y 9 [ S U E	OCR Scan	2SD999 OT-89) PWS10 CycleS50 S490A 2SB798 2SD999	PDF
2sa1154 Abstract: 2SC2719 2sc2720 2SC1280 2SA1152 2SA1151 2SA603 2SD1297 2SC943 NTC2335 Text: N E C ELECTRONICS INC C Transistors ET b4S7SES OOOblDl 1 STC iààau M i T -33- 0 / •Wim - W - I J .4 I U Ü Í I J W 3 B ! U W M P H 1 »VJW» '»J-M* 1 ■JM ■ r t n ïi « t i n t o • Darlington Power Transistors '^ U c VceoM (DC \|A1 \ Package \	OCR Scan	T-33-0/ O-126 NTD985 NTB794 NTD986 NTB795 NTD411 T0-220AB NTD560 2sa1154 2SC2719 2sc2720 2SC1280 2SA1152 2SA1151 2SA603 2SD1297 2SC943 NTC2335	PDF
2SB816 Abstract: 2SB1212 2SB921 2SB873 2SA1120 2SB1085B 2sb 989 2SB941 2SC4341 2SB1416 Text: 59 - fi 2SB 980 2SB 2SB 2SB 2SB 2S8 2SB 981 982 983 , 984 _ • 985 986 , 2S8 987 2SB 988 « Manuf. T K T tfi T fö T S tB t u q n 989 991 992 993 994 995 996 2SB 2SB 2SB 2SB 2SB 997 ^ 998 999 1000 1000A H 3 SANYO 9ÇR77C; 2SB775 2SB816 2SB825 2SB816 * 2SA17Q3	OCR Scan	2SA1253 2SB849 2SB775 2SA1264 2SB965 2SB1371 2SA1264 2SB1372 2SB816 2SA1265 2SB1212 2SB921 2SB873 2SA1120 2SB1085B 2sb 989 2SB941 2SC4341 2SB1416	PDF
RTIP144C Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C Text: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.	OCR Scan	2SB1186 2SB1186A 2SA1304 2SA1306 2SA1305 2SB1274 2SB1015 2SB1133 2SB1287 2SB1185 RTIP144C RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C	PDF
2SC2719 Abstract: 2sc2720 NTC2335 2SC1280A 2SA603 28c128 2SA1154 NTB601 NTC27 NTB795 Text: N E C ELECTRONICS INC STC C Transistors ET fSB U .Jjl.W bMSTSES DOOblOl 1 D atom [v j w -I»W1 -i»'. I.U I •JU iM à ta iiita iib É ttâ d K i • D arlington Pow er Transistors '"~'''S=-Jc DC [A] Vceom \ Package \ 60 TO-126 80 TO-126 3.0 2.0 1.5	OCR Scan	T-33-0/ O-126 NTD985 NTB794 NTD986 NTB795 NTD411 T0-220AB NTD560 2SC2719 2sc2720 NTC2335 2SC1280A 2SA603 28c128 2SA1154 NTB601 NTC27 NTB795	PDF

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2SB798 Search Results

2SB798 Result Highlights (4)

2SB798 Price and Stock

NEC Electronics Group 2SB798-T1

Renesas Electronics Corporation 2SB798(0)-T1-AZ

Others 2SB798-T2

Renesas Electronics Corporation 2SB798-T1

2SB798 Datasheets (19)

2SB798 Datasheets Context Search

N0201

Untitled

Untitled

transistor SMD DK

Untitled

dk qw

dk SOT-89

N0201

Untitled

micro servo 9g

alternator diode 1776 B

2sk2500

pa1476h

uPD16305

ta69

n20m

TFK 082

Untitled

5490A

S490A

2sa1154

2SB816

RTIP144C

2SC2719