DBB04
Abstract: DBB04C DBB04G SANYO RECTIFIER
Text: Ordering number :EN2793A DBB04 Diffused Junction Silicon Diode 0.4A Single-Phase Bridge Rectifier Features Package Dimensions • Single-phase bridge rectifier use. · Plastic molded structure. · Peak reverse voltage:VRM=200, 600V. · Average rectified current:IO=0.4A.
|
Original
|
EN2793A
DBB04
DBB04]
DBB04C
DBB04G
DBB04
DBB04C
DBB04G
SANYO RECTIFIER
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Ordering number :EN2793A DBB04 Diffused Junction Silicon Diode 0.4A Single-Phase Bridge Rectifier Features Package Dimensions • Single-phase bridge rectifier use. · Plastic molded structure. · Peak reverse voltage:VRM=200, 600V. · Average rectified current:IO=0.4A.
|
Original
|
EN2793A
DBB04
DBB04]
DBB04C
DBB04G
|
PDF
|
DBB04
Abstract: DBB04C DBB04G
Text: Ordering number :EN2793A DBB04 Diffused Junction Silicon Diode 0.4A Single-Phase Bridge Rectifier Features Package Dimensions • Single-phase bridge rectifier use. · Plastic molded structure. · Peak reverse voltage:VRM=200, 600V. · Average rectified current:IO=0.4A.
|
Original
|
EN2793A
DBB04
DBB04]
DBB04C
DBB04G
DBB04
DBB04C
DBB04G
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Ordering number :EN2793A DBB04 Diffused Junction Silicon Diode 0.4A Single-Phase Bridge Rectifier Package Dimensions Features • Single-phase bridge rectifier use. · Plastic molded structure. · Peak reverse voltage:VRM=200, 600V. · Average rectified current:IO=0.4A.
|
Original
|
EN2793A
DBB04
DBB04]
DBB04C
DBB04G
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD DB107G DIODE 1.0A GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER + DESCRIPTION The UTC DB107G is a 1.0A glass passivated single-phase bridge rectifier. The UTC DB107G is suitable for automatic insertion. - DFM FEATURES
|
Original
|
DB107G
DB107G
DB107GL-DFM-T
DB107GP-DFM-T
QW-R227-003
QW-R227--03
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD DB106G DIODE 1.0A GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER + DESCRIPTION The UTC DB106G is a 1.0A glass passivated single-phase bridge rectifier. The UTC DB106G is suitable for automatic insertion. - DFM FEATURES
|
Original
|
DB106G
DB106G
DB106GL-DFM-T
DB106GP-DFM-T
QW-R227-002
|
PDF
|
DBA30
Abstract: DBA30B DBA30C DBA30E DBA30G silicon diode 3a DIODE 3A
Text: Ordering number:EN648D DBA30 Diffused Junction Silicon Diode 3A Single-Phase Bridge Rectifier Features Package Dimensions • Single-phase bridge rectifier applications. · Plastic molded type. · Peak reverse voltage : VRM=100 to 600V. · Average rectified current : IO=3A
|
Original
|
EN648D
DBA30
1088B
DBA30]
DBA30B
DBA30C
DBA30E
DBA30G
DBA30
DBA30E
DBA30G
silicon diode 3a
DIODE 3A
|
PDF
|
lsha
Abstract: DBA30 DBA30B DBA30C DBA30E
Text: Ordering number:EN648D _ DBA30 ISAßroi Diffused Junction Silicon Diode 3A Single-Phase Bridge Rectifier Features Package Dimensions • Single-phase bridge rectifier applications. u n 11:m it i • Plaslic m olded type, 1088B •Peak reverse voltage ; V RM= |0 0 to 600V.
|
OCR Scan
|
EN643D
DBA30
1088B
DBA30B
DBA30C
DBA30E
D8A30G
lsha
DBA30
|
PDF
|
semiconductor
Abstract: hirect H507CH Hirect diode H400TB
Text: SEMICONDUCTOR DESIGN GUIDE Hind Rectifiers Ltd ISO 9001-2000 Contents Page no. ► Rectifier Diodes 1 Top Hat Type 2) Capsules and Fast Recovery Diode 3) Modules Isolated Base) a) Diode-Diode Modules b) Single Phase Bridge c) Three Phase Bridge 1 3 5 5 5
|
Original
|
|
PDF
|
DBB04
Abstract: DBB04C DBB04G 2793a
Text: O rd e rin g n u m b e r: EN2793A DBB04 N0.2793A Diffused Junction Silicon Diode 0.4A Single-Phase Bridge Rectifier F e a tu re s •Single-phase bridge rectifier use • Plastic molded structure • Peak reverse voltage : Vrm = 200 to 600V ■Average rectified current : Io = 0.4A
|
OCR Scan
|
EN2793A
DBB04
DBB04C
DBB04G
DBB04
2793a
|
PDF
|
1KAB60
Abstract: 1kab20e
Text: 1KAB-E Series Vishay High Power Products Single Phase Rectifier Bridge, 1.2 A FEATURES • Ease of assembly, installation, inventory RoHS • High surge rating COMPLIANT • Compact • RoHS compliant DESCRIPTION D-38 A 1.2 A diode bridge rectifier assembly designed for new
|
Original
|
1KAB10E
1KAB20E
1KAB40E
1KAB60E
1KAB80E
1KAB100E
B40C1000
B80C1000
B125C1000hay
11-Mar-11
1KAB60
|
PDF
|
B500C1000
Abstract: 1KAB20 B80C1000 1kab60e 1KAB60 1kab40
Text: 1KAB-E Series Vishay High Power Products Single Phase Rectifier Bridge, 1.2 A FEATURES • Ease of assembly, installation, inventory RoHS • High surge rating COMPLIANT • Compact • RoHS compliant DESCRIPTION D-38 A 1.2 A diode bridge rectifier assembly designed for new
|
Original
|
1KAB10E
1KAB20E
1KAB40E
1KAB60E
1KAB80E
1KAB100E
B40C1000
B80C1000
B125C1000trademarks
2011/65/EU
B500C1000
1KAB20
1KAB60
1kab40
|
PDF
|
1KAB80E
Abstract: 1KAB100E 1KAB10E 1KAB20E 1KAB40E 1KAB60E B125C1000 B250C1000 B40C1000 B80C1000
Text: 1KAB-E Series Vishay High Power Products Single Phase Rectifier Bridge, 1.2 A FEATURES • Ease of assembly, installation, inventory RoHS • High surge rating COMPLIANT • Compact • RoHS compliant DESCRIPTION D-38 A 1.2 A diode bridge rectifier assembly designed for new
|
Original
|
18-Jul-08
1KAB80E
1KAB100E
1KAB10E
1KAB20E
1KAB40E
1KAB60E
B125C1000
B250C1000
B40C1000
B80C1000
|
PDF
|
1KAB60E
Abstract: 1KAB80E B125C1000 B250C1000 B40C1000 B80C1000 1KAB100E 1KAB10E 1KAB20E 1KAB40E
Text: 1KAB-E Series Vishay High Power Products Single Phase Rectifier Bridge, 1.2 A FEATURES • Ease of assembly, installation, inventory RoHS • High surge rating COMPLIANT • Compact • RoHS compliant DESCRIPTION D-38 A 1.2 A diode bridge rectifier assembly designed for new
|
Original
|
11-Mar-11
1KAB60E
1KAB80E
B125C1000
B250C1000
B40C1000
B80C1000
1KAB100E
1KAB10E
1KAB20E
1KAB40E
|
PDF
|
|
|
52098HA
Abstract: dbb10 DBB10B DBB10E DBB10G
Text: Ordering number:EN1061D DBB10 Diffused Junction Silicon Diode 1.0A Single-Phase Bridge Rectifier Features Package Dimensions • Plastic molded structure. · Peak reverse voltage:VRM=100 to 600V. · Average rectified current:IO=1.0A. unit:mm 1112 [DBB10] Specifications
|
Original
|
EN1061D
DBB10
DBB10]
DBB10B
DBB10E
DBB10G
52098HA
dbb10
DBB10B
DBB10E
DBB10G
|
PDF
|
DBA10B
Abstract: DBA10 D288M DBA10C DBA10E DBA10G Sanyo Electric
Text: Ordering number:EN646D DBA10 Diffused Junction Silicon Diode 1.0A Single-Phase Bridge Rectifier Features Package Dimensions • Plastic molded structure. · Peak reverse voltage:VRM=100 to 600V · Average rectified current:IO=1.0A. unit:mm 1093 [DBA10] Specifications
|
Original
|
EN646D
DBA10
DBA10]
DBA10B
DBA10C
DBA10E
DBA10G
DBA10
D288M
DBA10E
DBA10G
Sanyo Electric
|
PDF
|
b20c1500
Abstract: E2733 2KBB20R B250C1500 1000 b380c1500 B250C1500 2kbb10r B80C1500 2KBB20 2KBB100R
Text: Bulletin E2733 rev. D 2KBB SERIES 1.9A single phase rectifier bridge Maximum Ratings and Characteristics 2KBB. Units 1.9 A 50Hz 50 A 60Hz 52 A 50Hz 17.7 A2s 60Hz 16.1 A2s 100 to 1000 V - 40 to 150 °C IO IFSM I2t VRRM TJ Description/Features A 1.9A single phase diode brodge rectifier assembly consisting of four
|
Original
|
E2733
2KBB05
2KBB10
2KBB20
b20c1500
2KBB20R
B250C1500 1000
b380c1500
B250C1500
2kbb10r
B80C1500
2KBB20
2KBB100R
|
PDF
|
DBA500G
Abstract: diode 50A
Text: DBA500G Ordering number : ENA0699 SANYO Semiconductors DATA SHEET DBA500G Diffused Junction Silicon Diode 50A Single-Phase Bridge Rectifier Features • • • Plastic molded structure. Peak reverse voltage : VRM=600V. Average output current : IO=50A. Specifications
|
Original
|
DBA500G
ENA0699
A0699-3/3
DBA500G
diode 50A
|
PDF
|
DBA500G
Abstract: No abstract text available
Text: DBA500G Ordering number : ENA0699A SANYO Semiconductors DATA SHEET DBA500G Diffused Junction Silicon Diode 50A Single-Phase Bridge Rectifier Features • • • Plastic molded structure Peak reverse voltage : VRM=600V Average output current : IO=50A Specifications
|
Original
|
DBA500G
ENA0699A
A0699-3/3
DBA500G
|
PDF
|
HA 3089
Abstract: No abstract text available
Text: Ordering number : ENN2145C DBA250 Diffused Junction Silicon Diode DBA250 25.0A Single-Phase Bridge Rectifier Features • • • • Package Dimensions Plastic molded structure. Glass passivation for high reliability. Peak reverse voltage : VRM=200, 600V.
|
Original
|
ENN2145C
DBA250
DBA250]
DBA250C
DBA250G
HA 3089
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Ordering number : ENN2222C DBA150 Diffused Junction Silicon Diode DBA150 15.0A Single-Phase Bridge Rectifier Features • • • • Package Dimensions Plastic molded structure. Glass passivation for high reliability. Peak reverse voltage : VRM=200, 600V.
|
Original
|
ENN2222C
DBA150
DBA150]
DBA150C
DBA150G
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Ordering number : ENN2222C DBA150 Diffused Junction Silicon Diode DBA150 15.0A Single-Phase Bridge Rectifier Features • • • • Package Dimensions Plastic molded structure. Glass passivation for high reliability. Peak reverse voltage : VRM=200, 600V.
|
Original
|
ENN2222C
DBA150
DBA150]
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Ordering number : ENN2222C DBA150 Diffused Junction Silicon Diode DBA150 15.0A Single-Phase Bridge Rectifier Features • • • • Package Dimensions Plastic molded structure. Glass passivation for high reliability. Peak reverse voltage : VRM=200, 600V.
|
Original
|
ENN2222C
DBA150
DBA150]
DBA150C
DBA150G
|
PDF
|
DBA150
Abstract: DBA150C DBA150G
Text: Ordering number : ENN2222C DBA150 Diffused Junction Silicon Diode DBA150 15.0A Single-Phase Bridge Rectifier Features • • • • Package Dimensions Plastic molded structure. Glass passivation for high reliability. Peak reverse voltage : VRM=200, 600V.
|
Original
|
ENN2222C
DBA150
DBA150]
DBA150
DBA150C
DBA150G
|
PDF
|
