Untitled
Abstract: No abstract text available
Text: Ordering number:EN2821A DCF015 Silicon Epitaxial Planar Type Anode Common High-Speed Switching Diode Features Package Dimensions • Very small-sized package permitting DCF015applied sets to be made small and slim. · Fast switching speed. · Twin type, anode common.
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EN2821A
DCF015
DCF015applied
DCF015]
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Untitled
Abstract: No abstract text available
Text: Ordering number:EN4893 FX853 MOSFET:N-Channel Silicon MOSFET SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type composed of a low ON-resistance Nchannel MOSFET for ultrahigh-speed switching and low-voltage driving and a fast-recovery, low forward
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EN4893
FX853
FX853
2SK1467
SB05-05P,
FX853]
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Untitled
Abstract: No abstract text available
Text: Ordering number:EN1159C DCA015 Silicon Epitaxial Planar Type Anode Common High-Speed Switching Diode Features Package Dimensions • Ideally suited for use in hybrid ICs because of very small-sized package. · Fast switching speed. · Economical because 2pcs, are contained.
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EN1159C
DCA015
DCA015]
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Untitled
Abstract: No abstract text available
Text: Ordering number:EN4886 FX603 P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features Package Dimensions • Composite type composed of two low ON-resistance P-channel MOSFET chips for ultrahigh-speed switching and low-voltage drive. · Facilitates high-density mounting.
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EN4886
FX603
FX603
2SJ187,
FX603]
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DBB08G
Abstract: DBB08 DBB08C
Text: Ordering number :EN2772B DBB08 Diffused Junction Silicon Diode 0.8A Single-Phase Bridge Rectifier Features Package Dimensions • Plastic molded structure and ultrasmall package making it easy to make DBB08-applied sets smaller. · Two type of package available, surface mount type
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EN2772B
DBB08
DBB08-applied
DBB08]
DBB08C
DBB08G
DBB08G
DBB08
DBB08C
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EN3115
Abstract: 2SA1753 FC117
Text: Ordering number:EN3115 FC117 PNP Epitaxial Planar Silicon Composite Transistor Low-Frequency General-Purpose Amp Applications Features Package Dimensions • Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.
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EN3115
FC117
FC117
2SA1753,
FC117]
EN3115
2SA1753
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4924
Abstract: 1SV272 EN4924 marking mv
Text: Ordering number :EN4924 1SV272 Silicon Epitaxial Type Transmitting, Receiving Antenna-switch Use PIN Diode Features Package Dimensions • Series connection of 2 elements in a Very smallsized package facilitates high-density mounting and permits 1SV272-applied equipment to be
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EN4924
1SV272
1SV272-applied
1SV272]
4924
1SV272
EN4924
marking mv
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FP302
Abstract: 2SC4520 SB05-05CP
Text: Ordering number:EN4726 FP302 TR:NPN Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with NPN transistor and Schottoky barrier diode facilitating high-density mounting.
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EN4726
FP302
FP302
2SC4520
SB05-05CP,
FP302]
SB05-05CP
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FP402
Abstract: EN5048
Text: Ordering number:EN5048 FP402 N-Channel MOS Silicon FET Very High-Speed Switching Applicaitons Features Package Dimensions • Low ON resistance. · Very high-speed switching. · Complex type with 2 low-voltage-drive N-channel MOSFETs facilitating high-density mounting.
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EN5048
FP402
FP402]
FP402
EN5048
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BX-1458
Abstract: IC UA 1458 marking 503 BX1458 2SB1202 FX503
Text: Ordering number:EN4903 FX503 PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Features Package Dimensions • Composite type with 2 PNP transistors contained in one package, facilitating high-density mounting. · The FX503 houses two chips, each being equivalent
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EN4903
FX503
FX503
2SB1202,
FX503]
BX-1458
IC UA 1458
marking 503
BX1458
2SB1202
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BD NPN transistors
Abstract: 2SC5245 FC157
Text: Ordering number:EN5433 FC157 NPN Epitaxial Planar Silicon Composite Transistor High-Frequency Low-Noise Amp, Differential Amp Applications Features Package Dimensions • Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.
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EN5433
FC157
FC157
2SC5245,
FC157]
BD NPN transistors
2SC5245
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN2799B DBF60G 6.0A Single-Phase Bridge Rectifier http://onsemi.com Features • • • • Glass passivation for high reliability Plastic molded structure Peak reverse voltage : VRM=600V Average output current : IO=6.0A Specifications Absolute Maximum Ratings at Ta=25°C
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EN2799B
DBF60G
A2799-2/2
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DBF60
Abstract: DBF60C DBF60G
Text: Ordering number:EN2799A DBF60 Silicon Diffused Junction Type 6.0A Single-Phase Bridge Rectifier Features Package Dimensions • Glass passivation for high reliability. · Plastic molded structure. · Peak reverse voltage:VRM=200, 600V. · Average rectified current:IO=6.0A.
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EN2799A
DBF60
DBF60]
DBF60C
DBF60G
DBF60
DBF60C
DBF60G
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marking 501
Abstract: BX1388
Text: Ordering number:EN4877 FX501 PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Features Package Dimensions • Composite type with 2 PNP transistors contained in one package, facilitating high-density mounting. · The FX501 houses two chips, each being equivalent
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EN4877
FX501
FX501
2SB1205,
FX501]
marking 501
BX1388
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EN5387
Abstract: FX901 PNP Transistor MOSFET
Text: Ordering number:EN5387 FX901 PNP Epitaxial Planar Silicon Transistor N-Channel MOS Silicon FET Silicon Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a 2.5V drive N-channel MOSFET with a built-in low
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EN5387
FX901
FX901]
EN5387
FX901
PNP Transistor MOSFET
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FX207
Abstract: marking 207
Text: Ordering number:EN5050 FX207 P-Channel Silicon MOSFET Very High-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Very high-speed switching. · 2.5V drive. unit:mm 2121 [FX207] Switching Time Test CIrcuit 1:No Contact 2:Gate
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EN5050
FX207
FX207]
FX207
marking 207
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2SA1496
Abstract: FC129
Text: Ordering number:EN3283 FC129 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications with Bias Resistance Features Package Dimensions • On-chip bias resistance (R1=10kΩ). · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.
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EN3283
FC129
FC129
2SA1496,
FC129]
2SA1496
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN2772C DBB08 0.8A Single-Phase Bridge Rectifier http://onsemi.com Features • • Plastic molded structure and ultrasmall package making it easy to make DBB08-applied sets smaller. Glass passivation for high reliability. Specifications
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EN2772C
DBB08
DBB08-applied
DBB08G
A2772-3/3
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Untitled
Abstract: No abstract text available
Text: Ordering number:EN4917 FX205 P-Channel Silicon MOSFET Very High-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Very high-speed switching. · Low-voltage drive. unit:mm 2121 [FX205] Switching Time Test CIrcuit 1:No Contact
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EN4917
FX205
FX205]
750mmh
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TA-0118
Abstract: MOSFET FOR 50HZ SWITCHING APPLICATIONS
Text: Ordering number:EN4893 FX853 MOSFET:N-Channel Silicon MOSFET SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type composed of a low ON-resistance Nchannel MOSFET for ultrahigh-speed switching and low-voltage driving and a fast-recovery, low forward
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EN4893
FX853
FX853
2SK1467
SB05-05P,
FX853]
TA-0118
MOSFET FOR 50HZ SWITCHING APPLICATIONS
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koyo
Abstract: 4336 2SK303 n-channel 4336 FC13 43363
Text: Ordering number:EN4336 FC13 N-Channel Junction Silicon FET Low-Frequency General-Purpose Amp, Differential Amp, Analog Switch Applications Features Package Dimensions • Composite type with 2 FETs contained in the CP package currently in use, improving the mounting
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EN4336
2SK303,
koyo
4336
2SK303
n-channel 4336
FC13
43363
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DBA100
Abstract: DBA100C DBA100G
Text: Ordering number:EN651D DBA100 Diffused Junction Silicon Diode 10.0A Single-Phase Bridge Rectifier Features Package Dimensions • Plastic molded structure. · Glass passivation for high reliability. · Peak reverse voltage:VRM=200, 600V. · Average rectified current:IO=10.0A.
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EN651D
DBA100
DBA100]
DBA100C
DBA100G
DBA100
DBA100C
DBA100G
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2SC4452
Abstract: FC140
Text: Ordering number:EN3361 FC140 NPN Epitaxial Planar Silicon Composite Transistor High-Speed Switching Applications Features Package Dimensions • Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.
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EN3361
FC140
FC140
2SC4452,
FC140]
2SC4452
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429mo
Abstract: No abstract text available
Text: [ordering number :EN621C | BTD4M Silicon Planar Type SA fiYO l Bidirectional Diode Features Ê Package Dimensions * Sm all si m and light weight. • D H D type package. unii: mm / / Ä Specifications Absolute Maximum Ratings at Ta = 2S *Ç /'/ Parameter / ¥
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EN821C
429mo
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