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    38428

    Abstract: 9945 A transistor 9945 mosfet 9962 mosfet 9962 3036 6914 AN609
    Text: SiR490DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		PDF SiR490DP AN609, 08-Dec-08 38428 9945 A transistor 9945 mosfet 9962 mosfet 9962 3036 6914 AN609

    7465S

    Abstract: SiR490DP
    Text: SPICE Device Model SiR490DP Vishay Siliconix N-Channel 25-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		PDF SiR490DP 18-Jul-08 7465S