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    SIRA18DP Price and Stock

    Vishay Siliconix SIRA18DP-T1-GE3

    MOSFET N-CH 30V 33A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIRA18DP-T1-GE3 Cut Tape 2,294 1
    • 1 $0.77
    • 10 $0.516
    • 100 $0.77
    • 1000 $0.25578
    • 10000 $0.25578
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    SIRA18DP-T1-GE3 Digi-Reel 2,294 1
    • 1 $0.77
    • 10 $0.516
    • 100 $0.77
    • 1000 $0.25578
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    SIRA18DP-T1-GE3 Reel 3,000
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    • 10000 $0.22453
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    RS SIRA18DP-T1-GE3 Bulk 20
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    • 100 $0.52
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    Vishay Siliconix SIRA18DP-T1-RE3

    MOSFET N-CH 30V 33A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIRA18DP-T1-RE3 Reel 3,000
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    • 10000 $0.17224
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    Vishay Intertechnologies SIRA18DP-T1-GE3

    N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SIRA18DP-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIRA18DP-T1-GE3 Reel 9,000 12 Weeks 3,000
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    • 10000 $0.1964
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    SIRA18DP-T1-GE3 Bulk 19 Weeks 1
    • 1 $0.648
    • 10 $0.531
    • 100 $0.402
    • 1000 $0.402
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    Mouser Electronics SIRA18DP-T1-GE3 14,420
    • 1 $0.61
    • 10 $0.49
    • 100 $0.354
    • 1000 $0.256
    • 10000 $0.2
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    Verical SIRA18DP-T1-GE3 6,000 3,000
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    SIRA18DP-T1-GE3 700 305
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    Arrow Electronics SIRA18DP-T1-GE3 6,000 12 Weeks 3,000
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    • 10000 $0.2009
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    Newark SIRA18DP-T1-GE3 Bulk 700 1
    • 1 $0.164
    • 10 $0.164
    • 100 $0.164
    • 1000 $0.164
    • 10000 $0.164
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    Bristol Electronics SIRA18DP-T1-GE3 30
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    TTI SIRA18DP-T1-GE3 Reel 9,000 3,000
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    TME SIRA18DP-T1-GE3 1
    • 1 $0.776
    • 10 $0.417
    • 100 $0.332
    • 1000 $0.298
    • 10000 $0.298
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    Avnet Asia SIRA18DP-T1-GE3 14 Weeks 3,000
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    EBV Elektronik SIRA18DP-T1-GE3 13 Weeks 3,000
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    Vishay Intertechnologies SIRA18DP-T1-RE3

    N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SIRA18DP-T1-RE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIRA18DP-T1-RE3 Reel 20 Weeks 3,000
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    • 10000 $0.15326
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    Mouser Electronics SIRA18DP-T1-RE3
    • 1 $0.52
    • 10 $0.443
    • 100 $0.331
    • 1000 $0.201
    • 10000 $0.146
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    TTI SIRA18DP-T1-RE3 Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.149
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    EBV Elektronik SIRA18DP-T1-RE3 21 Weeks 3,000
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    Vishay Intertechnologies SIRA18DP-T1-GE3.

    Mosfet, N-Ch, 30V, 33A, Powerpak So; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:33A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.4V Rohs Compliant: Yes |Vishay SIRA18DP-T1-GE3.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SIRA18DP-T1-GE3. Reel 3,000
    • 1 $0.279
    • 10 $0.279
    • 100 $0.279
    • 1000 $0.279
    • 10000 $0.279
    		Buy Now
    Find more SIRA18DP price and stock on Findchips.com

    SIRA18DP Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIRA18DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 33A SO-8 Original PDF

    SIRA18DP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: New Product SiRA18DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () Max. 30 0.0075 at VGS = 10 V 33 0.0120 at VGS = 4.5 V 20.3 Qg (Typ.) 6.9 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • • • • 5.15 mm


    Original     		PDF SiRA18DP SiRA18DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiRA18DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiRA18DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiRA18DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A) a 33 20.3 RDS(on) () MAX. 0.0075 at VGS = 10 V 0.0120 at VGS = 4.5 V 30 Qg (TYP.) 6.9 nC D 5 D 6 • 100 % Rg and UIS tested • Material categorization:


    Original     		PDF SiRA18DP SiRA18DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiRA18DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () Max. 30 0.0075 at VGS = 10 V 33 0.0120 at VGS = 4.5 V 20.3 Qg (Typ.) 6.9 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • • • • 5.15 mm


    Original     		PDF SiRA18DP SiRA18DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiRA18DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A) a 33 20.3 RDS(on) () MAX. 0.0075 at VGS = 10 V 0.0120 at VGS = 4.5 V 30 Qg (TYP.) 6.9 nC D 5 D 6 • 100 % Rg and UIS tested • Material categorization:


    Original     		PDF SiRA18DP SiRA18DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiRA18DP_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SiRA18DP AN609, 4850m 2606u 7531m 2846m 9328u 0622m 3482u 01-Aug-12

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . POWER MOSFETs MOSFETs – Ultra-Low RDS on with Next Generation Technology TrenchFET Gen IV New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V Key Benefits • Next-generation technology optimizes several key specifications:


    Original     		PDF SiZ916DT SiZ340DT SiZ914DT VMN-PT0306-1402

    N-Channel MOSFETs

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in


    Original     		PDF SC-70 SC-75 1212-8S VMN-MS6926-1406 N-Channel MOSFETs