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    SIS322DNT Price and Stock

    Vishay Siliconix SIS322DNT-T1-GE3

    MOSFET N-CH 30V 38.3A PPAK1212-8
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    DigiKey SIS322DNT-T1-GE3 Reel 3,000
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    SIS322DNT-T1-GE3 Digi-Reel 1
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    SIS322DNT-T1-GE3 Cut Tape 1
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    Vishay Intertechnologies SIS322DNT-T1-GE3

    N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SIS322DNT-T1-GE3)
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    Avnet Americas SIS322DNT-T1-GE3 Reel 20 Weeks 3,000
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    Mouser Electronics SIS322DNT-T1-GE3 3,350
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    Newark SIS322DNT-T1-GE3 Cut Tape 3,000
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    SIS322DNT-T1-GE3 Reel 3,000
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    TTI SIS322DNT-T1-GE3 Reel 3,000
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    TME SIS322DNT-T1-GE3 1
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    EBV Elektronik SIS322DNT-T1-GE3 21 Weeks 3,000
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    SIS322DNT Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SIS322DNT-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 38.3A 1212-8 Original PDF

    SIS322DNT Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: New Product SiS322DNT Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)f 0.0075 at VGS = 10 V 38.3 0.0120 at VGS = 4.5 V 30.2 • TrenchFET Gen IV Power MOSFET • 100 % Rg and UIS Tested • Thin 0.75 mm height


    Original     		PDF SiS322DNT SiS322DNT-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiS322DNT_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SiS322DNT AN609, 5140m 4232u 8430m 0951m 3836m 2438m 4315u 10-Dec-13

    Untitled

    Abstract: No abstract text available
    Text: New Product SiS322DNT Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)f 0.0075 at VGS = 10 V 38.3 0.0120 at VGS = 4.5 V 30.2 • TrenchFET Gen IV Power MOSFET • 100 % Rg and UIS Tested • Thin 0.75 mm height


    Original     		PDF SiS322DNT SiS322DNT-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiS322DNT Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)f 0.0075 at VGS = 10 V 38.3 0.0120 at VGS = 4.5 V 30.2 • TrenchFET Gen IV Power MOSFET • 100 % Rg and UIS Tested • Thin 0.75 mm height


    Original     		PDF SiS322DNT 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . POWER MOSFETs MOSFETs – Ultra-Low RDS on with Next Generation Technology TrenchFET Gen IV New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V Key Benefits • Next-generation technology optimizes several key specifications:


    Original     		PDF SiZ916DT SiZ340DT SiZ914DT VMN-PT0306-1402

    POWERPAK SO8

    Abstract: SIS32
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs – Ultra-Low RDS on with Next Generation Technology AND TEC I INNOVAT O L OGY TrenchFET Gen IV N HN POWER MOSFETs O 19 62-2012 New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V


    Original     		PDF SiZ916DT VMN-PT0306-1209 POWERPAK SO8 SIS32