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    SIS438DN Price and Stock

    Vishay Siliconix SIS438DN-T1-GE3

    MOSFET N-CH 20V 16A PPAK 1212-8
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    DigiKey SIS438DN-T1-GE3 Digi-Reel 39,553 1
    • 1 $1.23
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    SIS438DN-T1-GE3 Cut Tape 39,553 1
    • 1 $1.23
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    SIS438DN-T1-GE3 Reel 38,860 3,000
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    New Advantage Corporation SIS438DN-T1-GE3 12,000 1
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    Vishay Intertechnologies SIS438DN-T1-GE3

    N-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SIS438DN-T1-GE3)
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    Avnet Americas SIS438DN-T1-GE3 Reel 18 Weeks 3,000
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    Mouser Electronics SIS438DN-T1-GE3 10,190
    • 1 $0.7
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    Newark SIS438DN-T1-GE3 Cut Tape 10,458 1
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    SIS438DN-T1-GE3 Reel 3,000
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    TTI SIS438DN-T1-GE3 Reel 42,000 3,000
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    TME SIS438DN-T1-GE3 1
    • 1 $0.746
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    Chip One Stop SIS438DN-T1-GE3 Cut Tape 1,969
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    EBV Elektronik SIS438DN-T1-GE3 19 Weeks 3,000
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    SIS438DN Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIS438DN-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 16A PPAK 1212-8 Original PDF

    SIS438DN Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiS438DN Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0095 at VGS = 10 V 16 0.0125 at VGS = 4.5 V 16 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET


    Original     		SiS438DN 2002/95/EC SiS438DN-T1-GE3 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiS438DN Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiS438DN 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiS438DN Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0095 at VGS = 10 V 16 0.0125 at VGS = 4.5 V 16 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET


    Original     		SiS438DN 2002/95/EC SiS438DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiS438DN www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiS438DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiS438DN Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0095 at VGS = 10 V 16 0.0125 at VGS = 4.5 V 16 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET


    Original     		SiS438DN 2002/95/EC SiS438DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiS438DN Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0095 at VGS = 10 V 16 0.0125 at VGS = 4.5 V 16 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET


    Original     		SiS438DN 2002/95/EC SiS438DN-T1-GE3 11-Mar-11 PDF

    SIS438DN-T1-GE3

    Abstract: No abstract text available
    Text: New Product SiS438DN Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0095 at VGS = 10 V 16 0.0125 at VGS = 4.5 V 16 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET


    Original     		SiS438DN 2002/95/EC SiS438DN-T1-GE3 18-Jul-08 PDF

    9934

    Abstract: 2103 datasheet AN609
    Text: SiS438DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		SiS438DN AN609, 09-Apr-09 9934 2103 datasheet AN609 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiS438DN Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0095 at VGS = 10 V 16 0.0125 at VGS = 4.5 V 16 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET


    Original     		SiS438DN 2002/95/EC SiS438DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Electrical Specifications Subject to Change LTC3350 High Current Supercapacitor Backup Controller and System Monitor Description Features High Efficiency Synchronous Step-Down CC/CV Charging of One to Four Series Supercapacitors n Step-Up Mode in Backup Provides Greater


    Original     		LTC3350 14-Bit 38-Lead LTC4425 12-Pin 12-Lead 3350p com/LTC3350 PDF

    Sanyo supercapacitors

    Abstract: maxwell balancing
    Text: LTC3350 High Current Supercapacitor Backup Controller and System Monitor Description Features High Efficiency Synchronous Step-Down CC/CV Charging of One to Four Series Supercapacitors n Step-Up Mode in Backup Provides Greater Utilization of Stored Energy in Supercapacitors


    Original     		LTC3350 14-Bit 38-Lead LTC4425 12-Pin 12-Lead com/LTC3350 3350f Sanyo supercapacitors maxwell balancing PDF

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2 PDF

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n tertec h n olo g y, I n c . Power MOSFETs M O S F ET s Tre nchFET G e n III Key features and Benefits Low conduction and switching losses enable increased efficiency and reduced power consumption • Record-breaking maximum on-resistance at VGS = 4.5 V rating


    Original     		VMN-PT0105-1007 PDF

    Untitled

    Abstract: No abstract text available
    Text: LTC3350 High Current Supercapacitor Backup Controller and System Monitor Description Features High Efficiency Synchronous Step-Down CC/CV Charging of One to Four Series Supercapacitors n Step-Up Mode in Backup Provides Greater Utilization of Stored Energy in Supercapacitors


    Original     		LTC3350 14-Bit 38-Lead LTC4425 12-Pin 12-Lead com/LTC3350 3350fa PDF

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477 PDF