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    SIS443DN Price and Stock

    Vishay Siliconix SIS443DN-T1-GE3

    MOSFET P-CH 40V 35A PPAK 1212-8
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    DigiKey SIS443DN-T1-GE3 Cut Tape 25,836 1
    • 1 $1.93
    • 10 $1.228
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    • 1000 $0.67726
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    SIS443DN-T1-GE3 Digi-Reel 25,836 1
    • 1 $1.93
    • 10 $1.228
    • 100 $1.93
    • 1000 $0.67726
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    SIS443DN-T1-GE3 Reel 24,000 3,000
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    RS SIS443DN-T1-GE3 Bulk 3,000
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    Quest Components SIS443DN-T1-GE3 15
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    • 100 $0.774
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    New Advantage Corporation SIS443DN-T1-GE3 6,000 1
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    Vishay Intertechnologies SIS443DN-T1-GE3

    Trans MOSFET P-CH 40V 13.3A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SIS443DN-T1-GE3)
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    Avnet Americas SIS443DN-T1-GE3 Reel 9,000 17 Weeks 3,000
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    SIS443DN-T1-GE3 Ammo Pack 17 Weeks, 4 Days 1
    • 1 $1.94
    • 10 $1.32
    • 100 $0.96
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    Mouser Electronics SIS443DN-T1-GE3 23,812
    • 1 $1.7
    • 10 $1.26
    • 100 $0.927
    • 1000 $0.674
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    Verical SIS443DN-T1-GE3 20,714 98
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    SIS443DN-T1-GE3 6,000 3,000
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    SIS443DN-T1-GE3 3,000 3,000
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    SIS443DN-T1-GE3 3,000 3,000
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    SIS443DN-T1-GE3 3,000 3,000
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    SIS443DN-T1-GE3 2,557 10
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    • 100 $0.6489
    • 1000 $0.6174
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    Arrow Electronics SIS443DN-T1-GE3 6,000 15 Weeks 3,000
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    SIS443DN-T1-GE3 3,000 15 Weeks 3,000
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    SIS443DN-T1-GE3 3,000 17 Weeks 3,000
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    SIS443DN-T1-GE3 Cut Strips 2,557 17 Weeks 1
    • 1 $0.6804
    • 10 $0.6699
    • 100 $0.6489
    • 1000 $0.6174
    • 10000 $0.6174
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    Newark SIS443DN-T1-GE3 Cut Tape 20,714 1
    • 1 $0.512
    • 10 $0.512
    • 100 $0.512
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    SIS443DN-T1-GE3 Reel 9,000 3,000
    • 1 $0.575
    • 10 $0.575
    • 100 $0.575
    • 1000 $0.575
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    SIS443DN-T1-GE3 Reel 1
    • 1 $0.828
    • 10 $0.828
    • 100 $0.828
    • 1000 $0.796
    • 10000 $0.612
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    Bristol Electronics SIS443DN-T1-GE3 678
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    TTI SIS443DN-T1-GE3 Reel 12,000 3,000
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    TME SIS443DN-T1-GE3 2,913 1
    • 1 $1.86
    • 10 $1.59
    • 100 $1.22
    • 1000 $0.85
    • 10000 $0.84
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    Avnet Asia SIS443DN-T1-GE3 19 Weeks 3,000
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    EBV Elektronik SIS443DN-T1-GE3 16 Weeks 3,000
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    Vyrian SIS443DN-T1-GE3 24,683
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    Vishay Intertechnologies SIS443DNT1GE3

    AVAILABLE EU
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    ComSIT USA SIS443DNT1GE3 896
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    SIS443DNT1GE3 52
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    Vishay Huntington SIS443DN-T1-GE3

    MOSFET P-CH 40V 35A PPAK 1212-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics SIS443DN-T1-GE3 60,840
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    • 1000 $0.5233
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    SIS443DN Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIS443DN-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 40V 35A PPAK 1212-8 Original PDF

    SIS443DN Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SIS443DN

    Abstract: Si7625DN S12307
    Text: New Product SiS443DN Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) () Max. ID (A) 0.0117 at VGS = - 10 V - 35d 0.0160 at VGS = - 4.5 V - 35d • TrenchFET Power MOSFET • 100% Rg and UIS Tested • Material categorization:


    Original     		SiS443DN Si7625DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 Si7625DN S12307 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiS443DN www.vishay.com Vishay Siliconix P-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiS443DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiS443DN Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) () Max. ID (A) 0.0117 at VGS = - 10 V - 35d 0.0160 at VGS = - 4.5 V - 35d • TrenchFET Power MOSFET • 100% Rg and UIS Tested • Material categorization:


    Original     		SiS443DN SiS443DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiS443DN Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) () Max. ID (A) 0.0117 at VGS = - 10 V - 35d 0.0160 at VGS = - 4.5 V - 35d • TrenchFET Power MOSFET • 100% Rg and UIS Tested • Material categorization:


    Original     		SiS443DN SiS443DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiS443DN Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) () Max. ID (A) 0.0117 at VGS = - 10 V - 35d 0.0160 at VGS = - 4.5 V - 35d • TrenchFET Power MOSFET • 100% Rg and UIS Tested • Material categorization:


    Original     		SiS443DN SiS443DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET TrenchFET Gen III - P-Channel Breakthrough P-Channel Technology Dramatically Cuts RDS on KEY BENEFITS • Lowest on-resistance per area achieved for a p-channel MOSFET: down to half of


    Original     		SC-75 Si1865DDL Si7997DP SiA923AEDJ SiA929DJ SC-70 SiA527DJ SiA537EDJ VMN-PT0197-1402 PDF