Untitled
Abstract: No abstract text available
Text: 1N5711-1 1N5711US-1 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5111, REV. - SJ SX SV SS SWITCHING DIODE 1N5711-1, 1N5711US-1 • Hermetic, non-cavity glass package Metallurgically bonded Physical dimensions: Axial lead similar to DO-35 and surface mount similar to D-5D
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1N5711-1
1N5711US-1
1N5711-1,
DO-35
1N5711,
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1N5711US-1
Abstract: 1N5711-1 1N5711
Text: 1N5711-1 1N5711US-1 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5111, REV. - SJ SX SV SWITCHING DIODE 1N5711-1, 1N5711US-1 • Hermetic, non-cavity glass package • Metallurgically bonded • Physical dimensions: Axial lead similar to DO-35 and surface mount similar to D-5D
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1N5711-1
1N5711US-1
1N5711-1,
DO-35
1N5711,
SS5711-1
SS57sheet
1N5711US-1
1N5711-1
1N5711
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diode 1N3595us-1
Abstract: 1N3595US 1N3595US-1 1N3595 D-5D 1N3595 1N3595-1
Text: 1N3595-1 1N3595US-1 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5086, REV. - SJ SX SV SWITCHING DIODE 1N3595-1, 1N3595US-1 • Hermetic, non-cavity glass package • Metallurgically bonded • Physical dimensions: Axial lead similar to DO-35 and surface mount similar to D-5D
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1N3595-1
1N3595US-1
1N3595-1,
DO-35
1N3595,
diode 1N3595us-1
1N3595US
1N3595US-1
1N3595 D-5D
1N3595
1N3595-1
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Untitled
Abstract: No abstract text available
Text: FCP110N65F N-Channel SuperFET II FRFET® MOSFET 650 V, 35 A, 110 m Features Description • 700 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance
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FCP110N65F
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Untitled
Abstract: No abstract text available
Text: FCH110N65F N-Channel SuperFET II FRFET® MOSFET 650 V, 35 A, 110 m Features Description • 700 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance
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FCH110N65F
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Untitled
Abstract: No abstract text available
Text: FCH35N60 N-Channel SuperFET MOSFET 600 V, 35 A, 98 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology
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FCH35N60
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FCA*35n60
Abstract: FCA35n60
Text: FCA35N60 N-Channel SuperFET MOSFET 600 V, 35 A, 98 mΩ Features Description • 650V @ TJ = 150°C SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology
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FCA35N60
FCA*35n60
FCA35n60
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diode 1ss
Abstract: 1SS380 Sj 35 diode digram Diode SJ Diode SJ 14
Text: 1SS 380 M axim um Ratings Rating Sj- m hoi Va hie Unit 40 Vdc Peak Reverse Voltage DC Reverse Voltage VR 35 Vdc Mean Rectifying C urrent lo 100 m Adc IFM 225 mAdc Isurge 400 mAdc Junction Tem perature Tj 125 nc Storage Temperature Tstfc •55 to + 150 "c Peak Forward C urrent
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20Vdc)
diode 1ss
1SS380
Sj 35 diode
digram
Diode SJ
Diode SJ 14
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Untitled
Abstract: No abstract text available
Text: FCA35N60 N-Channel SuperFET MOSFET 600 V, 35 A, 98 mΩ Features Description • 650V @ TJ = 150°C SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology
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FCA35N60
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FCA*35n60
Abstract: fca35N60
Text: FCA35N60 N-Channel SuperFET MOSFET 600 V, 35 A, 98 mΩ Features Description ® ® SuperFET MOSFET is Fairchild Semiconductor ’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This technology is tailored to minimize conduction loss, provide superior switching
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FCA35N60
FCA35N60
FCA*35n60
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fch35n60
Abstract: No abstract text available
Text: FCH35N60 N-Channel SuperFET MOSFET 600 V, 35 A, 98 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching
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FCH35N60
FCH35N60
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AMMC-6522
Abstract: No abstract text available
Text: AMMP-6545 18 to 40 GHz GaAs MMIC Sub-Harmonic Mixer in SMT Package Data Sheet Features Description Avago’s AMMP-6545 is an easy-to-use broadband sub-harmonic mixer, with the LO injected at half the frequency of that required by a conventional mixer. MMIC includes an 180° balanced diode based mixer.
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AMMP-6545
AMMP-6545
AV02-0251EN
AV02-1382EN
AMMC-6522
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transistor 350-100
Abstract: 40328 BU326S npn darlington 400v 15a 2N3583 2N4296 2N4297 2N4298 2N4299 2N5427
Text: 1 1 0 1>L T K A N X I S T O R — w ~r U o - ¡7 7 t CO INC w 34D » 1 Zfl4fl3SS 0GD0132 B «ifci - . , . i 1 j l , 3 3 - 0 9 DIODE TRd \J515T0R CD. INC. (201) 686-0400 • Telex; 139-385 • Outside NY & NJ area call TO LL FR E E 800-526-4561 FAX No. 201-575-5863
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D10DL
0DD013E
2N5427
2N5428
2N542s
2N5838
2N5839
2N5840
2N3902
2N6542
transistor 350-100
40328
BU326S
npn darlington 400v 15a
2N3583
2N4296
2N4297
2N4298
2N4299
2N5427
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mp2a5100
Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
Text: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors
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RH011h
2007-10B120FIS
mp2a5100
ya868c12
YA868C15
2sk4004
YG865C10
F5049
diode 3a05
Diode SMD SJ 24
Diode SMD SJ 09
Diode SMD SJ 28
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1n4109-1
Abstract: zener diode 10 sv
Text: 1N4100-1/UR-1 to 1N4135-1/UR-1 SENSITRON SEMICONDUCTOR SJ SV SX SS TECHNICAL DATA DATASHEET 5095, Rev A.1 Zener 1.5W DIODE • Zener voltage available from 12V to 100V • Sharp Zener knee • Metallurgically bonded Type Number 1N4100-1/UR ‐1
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1N4100-1/UR-1
1N4135-1/UR-1
1N41001/UR
1N41011/UR
1N41021/UR
1N41031/UR
1N41041/UR
1N41051/UR
1N41061/UR
1N41071/UR
1n4109-1
zener diode 10 sv
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SD101AWS
Abstract: SD101BWS SD101CWS marking code SJ
Text: SD101AWS.SD101CWS SCHOTTKY DIODES Plastic-Encapsulate Diodes PINNING PIN Features: Cathode 2 Anode ˙ Low Forward Voltage Drop. ˙ Guard Ring Construction for DESCRIPTION 1 2 1 SJ Transient Protection. ˙ Negligible Reverse Recovery Time. Top View Marking Code: SD101AWS: SJ
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SD101AWS.
SD101CWS
SD101AWS:
SD101BWS:
SD101CWS:
OD-323
SD101AWS
SD101BWS
SD101AWS
SD101BWS
SD101CWS
marking code SJ
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NS1000 n
Abstract: CA3036 BVCEO-90V 2CY38 transistor A431 2n1613 replacement A431 UD1001 NS1862 QD401-78
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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BVCB0-80V
BVCE0-60V
BVEBO-15V
BVCBO-100V
BVCEO-80V
BVEB0-15V
BVCB0-60V
BVCE0-40V
MHM2101
NS1000 n
CA3036
BVCEO-90V
2CY38
transistor A431
2n1613 replacement
A431
UD1001
NS1862
QD401-78
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TRK 1703
Abstract: 74124 741244 tfk 223 18 BZX BZX 5.1
Text: ' w B Z X 5 5 / C . . . O Silizium-Epitaxial-Planar-Z-Dioden Silicon epitaxial planar Z diodes Anwendung: Spannungsstabilisierung Applications: Voltage stabilisation Besondere Merkmale: • • • • • Scharfer Abbruch der Sperrkennlinie Niedriges Sperrstrom niveau
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 1SV216 TOSHIBA VARIABLE CAPACITANCE DIODE TV VHF UHF TUNER AFC SILICON EPITAXIAL PLANAR TYPE 1 SV2 1 6 Unit in mm + 0.2 CHARACTERISTIC Reverse Voltage Peak Reverse Voltage Junction Temperature Storage Temperature Range SYMBOL Vr V rm Tj Tstg RATING UNIT
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1SV216
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1N3064
Abstract: 54LS242
Text: M Military 54LS242 M O TO R O LA Quad Bus Transceivers With 3-State Outputs ELECTRICALLY TESTED PER: MIL-M-38510/32801 M • Hysteresis at Inputs to Improve Noise Margins • 2-Way Asynchronous Data Bus Communications • Input Clamp Diodes Limit High-Speed Termination Effects
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MIL-M-38510/32801
54LS242
JM38510/32801BXA
54LS242/BXAJC
1N3064
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2sa525
Abstract: CA3036 2n1613 replacement CK727 D16P4 NS6205
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 1 SV 217 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV2 1 7 CATV TUNING. U nit in mm • High Capacitance Ratio : C 2 V /C 2 5 V = 12.5 Typ. • Excellent C-V Characteristics, and Small Tracking Error. 1.25 • + 0.2 0. -
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1SV217
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IEC 60947-5-6
Abstract: 60947-5-6 KFD2-SRA-Ex4 NCN3-F24R-N4 NCB2-12GM35-N0 NCB15 U1 NO NCB15 NCN3-F36-N4 namur standard positioner valve positioners
Text: Transformer Isolated Barriers KFD2-SRA-Ex* Output: Relay Input EEx ia IIC Input II + - Control circuit EEx ia IIC 24 V DC nominal supply voltage Reversible mode of operation Lead monitoring short circuit LK and interruption LB with LED indicator (red flashing), switching output and
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15-30GKK-N
15-30GM-N
20-40-N
25-50-N
NCN15-M1K-N0
NCB15
NCN20
NCN30
NCN40
NCN3-F24L-N4
IEC 60947-5-6
60947-5-6
KFD2-SRA-Ex4
NCN3-F24R-N4
NCB2-12GM35-N0
NCB15 U1 NO
NCN3-F36-N4
namur standard positioner
valve positioners
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Diode SJ
Abstract: LR35579 Diode SJ 12 Sj 35 diode Diode SJ 9 Diode SJ 14 E45026 Transistor SJ Sj diode
Text: SOLID STATE RELAY MAXIMUM LOAD CURRENT 1 A SJ SERIES • FEATURES ● ● ● ● ● UL, CSA recognized Extremely small and light weight —Size: 10.0 W x 20.2 (L) × 12.8 (H) mm —Weight: approximately 5.5g High reliability, long life and maintenance free
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