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    TUK Ltd SGKSJEPM

    Rj45 Conn, Keystone, Jack, 8P8C, 1Port; Modular Connector Type:Rj45 Jack; Port Configuration:1 X 1 Port; No. Of Positions/Loaded Contacts (Per Port):8P8C; Lan Category:Cat6A; Ip Rating:-; Connector Mounting:Panel Mount; Connector Rohs Compliant: Yes |Tuk SGKSJEPM (Alternate Part Number: 5055386507228
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SGKSJEPM Bulk 6 1
    • 1 $12.12
    • 10 $12.12
    • 100 $10.23
    • 1000 $8.92
    • 10000 $8.92
    		Buy Now

    Power Integrations SJEP120R063

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    Bristol Electronics SJEP120R063 46
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    Power Integrations SJEP120R100

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components SJEP120R100 6
    • 1 $241.5
    • 10 $234.6
    • 100 $234.6
    • 1000 $234.6
    • 10000 $234.6
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    SJEP Datasheets Context Search

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    SJEP120R100A

    Abstract: JFET semisouth SEMISOUTH SGDR300P1 silicon carbide JFET SGD300P1 silicon carbide j-fet SJEP120R100 silicon carbide SemiSouth Laboratories
    Text: Silicon Carbide PRELIMINARY SJEP120R100A Product Summary Normally-OFF Trench Silicon Carbide Power JFET BVDS RDS ON max ETS,typ Features: - Compatible with Standard Gate Driver ICs - Positive Temperature Coefficient for Ease of Paralleling - Extremely Fast Switching with No "Tail" Current at 150 °C


    Original     		SJEP120R100A O-247 SJEP120R100A JFET semisouth SEMISOUTH SGDR300P1 silicon carbide JFET SGD300P1 silicon carbide j-fet SJEP120R100 silicon carbide SemiSouth Laboratories PDF

    SJEP120R100

    Abstract: SEMISOUTH silicon carbide JFET SJEP120 JFET semisouth silicon carbide j-fet SJEP semisouth sjEp120R100 induction heating schematic semisouth JFET
    Text: Silicon Carbide PRELIMINARY SJEP120R100 Product Summary Normally-OFF Trench Silicon Carbide Power JFET BVDS RDS ON max ETS,typ Features: - Compatible with Standard Gate Driver ICs - Positive Temperature Coefficient for Ease of Paralleling - Extremely Fast Switching with No "Tail" Current at 150 °C


    Original     		SJEP120R100 O-247 SJEP120R100 SEMISOUTH silicon carbide JFET SJEP120 JFET semisouth silicon carbide j-fet SJEP semisouth sjEp120R100 induction heating schematic semisouth JFET PDF

    SJEP120R100

    Abstract: SEMISOUTH silicon carbide JFET semisouth sjEp120R100 SGD600P1 SGDR600P1 silicon carbide JFET semisouth
    Text: Silicon Carbide PRELIMINARY SJEP120R100 Product Summary Normally-OFF Trench Silicon Carbide Power JFET BVDS RDS ON max ETS,typ Features: - Compatible with Standard Gate Driver ICs - Positive Temperature Coefficient for Ease of Paralleling - Extremely Fast Switching with No "Tail" Current at 150 °C


    Original     		SJEP120R100 O-247 SJEP120R100 SEMISOUTH silicon carbide JFET semisouth sjEp120R100 SGD600P1 SGDR600P1 silicon carbide JFET semisouth PDF

    JFET semisouth

    Abstract: SJEP120R050 SGDR600P1 SEMISOUTH SJEP120 SJEP120R063 AN-SS1 ixdd509 SiC JFET JFET
    Text: Demo Board Preliminary SGDR600P1 Two-Stage Opto Coupled Gate Driver Demo Board The SGDR600P1 is an optoisolated, two-stage gate driver optimized for high speed, hard switching of SemiSouth's SJEP120R050 and SJEP120R063 normally-off SiC VJFETs. The SGDR600P1 gate driver provides a peak output current of +6/- 3A


    Original     		SGDR600P1 5V/-15V SGDR600P1 SJEP120R050 SJEP120R063 SJEP120R050 JFET semisouth SEMISOUTH SJEP120 AN-SS1 ixdd509 SiC JFET JFET PDF

    SJEP170R550

    Abstract: SEMISOUTH 3E05 silicon carbide JFET JFET semisouth silicon carbide j-fet SJEP170 SJEP170R550 datasheet high voltage smps SJEP
    Text: Silicon Carbide PRELIMINARY SJEP170R550 Product Summary Normally-OFF Trench Silicon Carbide Power JFET BVDS RDS ON max ETS,typ Features: - Compatible with Standard Gate Driver ICs - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior


    Original     		SJEP170R550 O-247 SJEP170R550 SEMISOUTH 3E05 silicon carbide JFET JFET semisouth silicon carbide j-fet SJEP170 SJEP170R550 datasheet high voltage smps SJEP PDF

    SJEP120R063

    Abstract: SEMISOUTH sjep120r063 SEMISOUTH JFET semisouth silicon carbide JFET silicon carbide j-fet silicon carbide SJEP SJEP120 sjep120r0
    Text: Silicon Carbide PRELIMINARY SJEP120R063 Product Summary Normally-OFF Trench Silicon Carbide Power JFET BVDS RDS ON max ETS,typ Features: - Compatible with Standard Gate Driver ICs - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior


    Original     		SJEP120R063 O-247 SJEP120R063 SEMISOUTH sjep120r063 SEMISOUTH JFET semisouth silicon carbide JFET silicon carbide j-fet silicon carbide SJEP SJEP120 sjep120r0 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Power Semiconductor Module Combines MNPC Topology with SiC Switches Kuno Straub, Product Marketing Manager, Vincotech GmbH This article compares and contrasts two types of modules, one with silicon switches and the other with SiC silicon carbide switches. Vincotech flowMNPC 0 modules in 12mm


    Original     		30-kW 30-kW, SJEP120R100, PDF

    JFET semisouth

    Abstract: SiC JFET SJEP120R063 SEMISOUTH sjep120r0
    Text: ADVANCED INFORMATION SiC JFET ASJE1200R063 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: Die Inside RDS ON max 0.063 V : ETS,typ 440 J • Hermetic TO-257 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening:


    Original     		ASJE1200R063 O-257 260oC MIL-PRF-19500 MIL-STD-750 SJEP120R063 O-247 ASJE1200R063 JFET semisouth SiC JFET SEMISOUTH sjep120r0 PDF

    ASJE1700R550

    Abstract: SiC JFET JFET semisouth 3E05 SEMISOUTH silicon carbide j-fet silicon carbide JFET SJEP170 SJEP170R550 SJEP
    Text: ADVANCE INFORMATION SiC JFET ASJE1700R550 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: RDS ON max 0.550 V : ETS,typ 74 J Die Inside • Hermetic TO-258 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening:


    Original     		ASJE1700R550 O-258 260oC MIL-PRF-19500 MIL-STD-750 SJEP170R550 O-247 ASJE1700R550 O-257 SiC JFET JFET semisouth 3E05 SEMISOUTH silicon carbide j-fet silicon carbide JFET SJEP170 SJEP PDF

    ASJE1200R063

    Abstract: SiC JFET JFET semisouth SJEP120 SJEP120R063 SEMISOUTH silicon carbide JFET sjep120r0
    Text: ADVANCE INFORMATION SiC JFET ASJE1200R063 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: Die Inside RDS ON max 0.063 V : ETS,typ 440 J • Hermetic TO-258 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening:


    Original     		ASJE1200R063 O-258 260oC MIL-PRF-19500 MIL-STD-750 SJEP120R063 O-247 ASJE1200R063 O-257 SiC JFET JFET semisouth SJEP120 SEMISOUTH silicon carbide JFET sjep120r0 PDF

    SJEP170R550

    Abstract: semisouth JFET 3E05 SEMISOUTH JFET semisouth ASJE1700R550
    Text: ADVANCED INFORMATION SiC JFET ASJE1700R550 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: RDS ON max 0.550 V : ETS,typ 74 J Die Inside • Hermetic TO-257 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening:


    Original     		ASJE1700R550 O-257 260oC MIL-PRF-19500 MIL-STD-750 SJEP170R550 O-247 ASJE1700R550 semisouth JFET 3E05 SEMISOUTH JFET semisouth PDF

    ASJE1200R100

    Abstract: SiC JFET JFET semisouth semisouth sjEp120R100 SEMISOUTH SJEP120R100 SJEP120 silicon carbide JFET
    Text: ADVANCE INFORMATION SiC JFET ASJE1200R100 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: RDS ON max 0.100 V : ETS,typ 170 J Die Inside • Hermetic TO-258 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening:


    Original     		O-258 260oC MIL-PRF-19500 MIL-STD-750 ASJE1200R100 SJEP120R100 O-247 ASJE1200R100 O-257 SiC JFET JFET semisouth semisouth sjEp120R100 SEMISOUTH SJEP120 silicon carbide JFET PDF

    SJEP120R125

    Abstract: SiC-JFET AN-SS1 sjep120r063 SiC JFET SEMISOUTH SEMISOUTH sjep120r125 silicon carbide JFET SiC BJT SJEP120
    Text: Application Note AN-SS1 Silicon Carbide Enhancement-Mode Junction Field Effect Transistor and Recommendations for Use Table of Contents 1. 2. 3. 4. 5. Page Device Overview . 2


    Original     		PDF

    JFET semisouth

    Abstract: SEMISOUTH SiC JFET
    Text: ADVANCED INFORMATION SiC JFET ASJE1200R100 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: RDS ON max 0.100 V : ETS,typ 170 J Die Inside • Hermetic TO-257 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening:


    Original     		O-257 260oC MIL-PRF-19500 MIL-STD-750 ASJE1200R100 SJEP120R100 O-247 ASJE1200R100 JFET semisouth SEMISOUTH SiC JFET PDF

    transistor 2Sc 2053

    Abstract: No abstract text available
    Text: •'aMFrTrS-tfoâé! +3.3 V, +5 V, Adjustable Micropower Linear Voltage Regulators ANÀLOG D EV IC ES FEATURES Tri-Mode Operation '7: ; 3.3 V, 5 V Fixed or +1.3 V to +lë V Adjustable Low Power CMOS: 9 |iA max Quiescent Current High Current 100 mA Output '


    OCR Scan     		ADM663/ADM666 ADM666A 63A/ADM transistor 2Sc 2053 PDF

    design of 4-20mA transmitter for abridge type transducer circuit diagram

    Abstract: IC ADM 866 REF19x Series
    Text: •'aMFrTrS-tfoâé! +3.3 V, +5 V, Adjustable Micropower Linear Voltage Regulators ANÀLOG D EV IC ES FEATURES Tri-Mode Operation '7: ; 3.3 V, 5 V Fixed or +1.3 V to +lë V Adjustable Low Power CMOS: 9 |iA max Quiescent Current High Current 100 mA Output '


    OCR Scan     		ADM663/ADM666 ADM666A 63A/ADM design of 4-20mA transmitter for abridge type transducer circuit diagram IC ADM 866 REF19x Series PDF