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    SKM200GAL12T4 Search Results

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    SKM200GAL12T4 Price and Stock

    SEMIKRON SKM200GAL12T4

    Igbt Module, Single, 1.2Kv, 313A; Continuous Collector Current:313A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:-; Operating Temperature Max:125°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Semikron SKM200GAL12T4
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SKM200GAL12T4 Bulk 12
    • 1 -
    • 10 $138.52
    • 100 $126.65
    • 1000 $126.65
    • 10000 $126.65
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    Richardson RFPD SKM200GAL12T4 1
    • 1 -
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    • 100 -
    • 1000 -
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    SEMIKRON SKM200GAL12T4 22892320

    Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SKM200GAL12T4 22892320 1
    • 1 $181.67
    • 10 $160.55
    • 100 $144.7
    • 1000 $144.7
    • 10000 $144.7
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    SKM200GAL12T4 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SKM200GAL12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 313 A Tc = 80 °C 241 A 200 A ICnom ICRM SEMITRANS 3 Fast IGBT4 Modules SKM200GAL12T4 VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V


    Original     		PDF SKM200GAL12T4

    SKM200GAL12T4

    Abstract: No abstract text available
    Text: SKM200GAL12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 314 A Tc = 80 °C 242 A 200 A ICnom ICRM SEMITRANS 3 Fast IGBT4 Modules ICRM = 3xICnom 600 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C


    Original     		PDF SKM200GAL12T4 Isol009 SKM200GAL12T4

    Untitled

    Abstract: No abstract text available
    Text: SKM200GAL12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 314 A Tc = 80 °C 242 A 200 A ICnom ICRM SEMITRANS 3 Fast IGBT4 Modules ICRM = 3xICnom 600 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C


    Original     		PDF SKM200GAL12T4

    SKM200GAL12T4

    Abstract: diode 331
    Text: SKM200GAL12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 314 A Tc = 80 °C 242 A 200 A ICnom ICRM SEMITRANS 3 Fast IGBT4 Modules ICRM = 3xICnom 600 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C


    Original     		PDF SKM200GAL12T4 SKM200GAL12T4 diode 331