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    SEMIKRON SKM22GD123D

    IGBT MODULE Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel
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    ComSIT USA SKM22GD123D 2
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    SKM22GD123 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SKM22GD123D Semikron IGBT Modules Original PDF
    SKM22GD123D Semikron SEMITRANS M - IGBT Module Original PDF
    SKM22GD123D Semikron SEMITRANS IGBT Modules New Range Scan PDF
    SKM22GD123DL Semikron SEMITRANS M - IGBT Module Original PDF

    SKM22GD123 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    IGBT 200A 1200V

    Abstract: T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi h MOflynM IGBT b an^aBMTHOM nop^AKe BUP203 (T0220) KpaTKoe onMcaHMe MG50Q2YS40 BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s HGTG12N60A4D HGTG30N60B3D


    OCR Scan     		PDF bup203 t0220) BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s IGBT 200A 1200V T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40

    SKM200GB123D

    Abstract: SKM75GD124D SKM50GB123D SKM400GB124D SKM40GD124D SKM75GDL123D SKM400GB124 SKM22GD123D SKM100GB124D SKM300GB124D
    Text: MHTEPTEKC www.i-t.su info@i-t.su Ten: electronics 495 739-09-95, 644-41-29 M o A y n u IG B T $ u p M b i S e m ik r o n HanpflweHnen3onai4Hn(1 mhh.) : 2500 VAC : o t -4 0 °C a o + 1 50 °C : Sem ikron flnana30H pa6oHnxTeMnepaTyp np0M3B0AMTenb Kofl: Uce


    OCR Scan     		PDF n30nai4nn flnana30H ot-40Â SKM100GB124D SKM200GB124D SKM300GB124D SKM400GB124D SKM50GB123D SKM100GB173D 60GB123D SKM200GB123D SKM75GD124D SKM40GD124D SKM75GDL123D SKM400GB124 SKM22GD123D

    SKM 40 GD 101 D

    Abstract: SKM 22 GD 101 D 123 DL
    Text: s e MIKRO n Absolute Maximum Ratings V a lu e s Symbol Conditions VcES VcGR lc ICM Vqes Rge = 20 kQ Teas ~ 25/80 °C Tease = 25/80 "C; tp — 1 ms P lo t per IGBT, T « , T„ Tag V«„ humidity climate AC, 1 min. DIN 40 040 DIN 1EC68T.1 1200 1200 2 5 /1 5


    OCR Scan     		PDF 1EC68T SKM22GD123 SKM 40 GD 101 D SKM 22 GD 101 D 123 DL