Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SKM600GA12E4 Search Results

    SF Impression Pixel

    SKM600GA12E4 Price and Stock

    SEMIKRON SKM600GA12E4

    Igbt Module, Single, 1.2Kv, 913A; Continuous Collector Current:913A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:-; Operating Temperature Max:125°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Semikron SKM600GA12E4
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SKM600GA12E4 Bulk 12
    • 1 -
    • 10 $230.46
    • 100 $217.2
    • 1000 $217.2
    • 10000 $217.2
    Buy Now

    SEMIKRON SKM600GA12E4 22892114

    Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 600A; SEMITRANS4
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SKM600GA12E4 22892114 1
    • 1 $311.53
    • 10 $274.88
    • 100 $246.85
    • 1000 $246.85
    • 10000 $246.85
    Get Quote

    SKM600GA12E4 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SKM600GA12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 916 A Tc = 80 °C 704 A 600 A ICnom ICRM SEMITRANS 4 IGBT4 Modules ICRM = 3xICnom 1800 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 707 A


    Original
    PDF SKM600GA12E4 CA009

    Untitled

    Abstract: No abstract text available
    Text: SKM600GA12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 913 A Tc = 80 °C 702 A 600 A ICnom ICRM SEMITRANS 4 IGBT4 Modules ICRM = 3xICnom 1800 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C


    Original
    PDF SKM600GA12E4

    diode 420

    Abstract: SKM600GA12E4
    Text: SKM600GA12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 916 A Tc = 80 °C 704 A 600 A ICnom ICRM SEMITRANS 4 IGBT4 Modules ICRM = 3xICnom 1800 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 707 A


    Original
    PDF SKM600GA12E4 diode 420 SKM600GA12E4

    Untitled

    Abstract: No abstract text available
    Text: SKM600GA12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 913 A Tc = 80 °C 702 A 600 A ICnom ICRM SEMITRANS 4 IGBT4 Modules SKM600GA12E4 VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V


    Original
    PDF SKM600GA12E4 SKM600GA12E4 E63532E'

    Untitled

    Abstract: No abstract text available
    Text: SKM600GA12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 913 A Tc = 80 °C 702 A 600 A ICnom ICRM SEMITRANS 4 IGBT4 Modules SKM600GA12E4 VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V


    Original
    PDF SKM600GA12E4