SL30B60K Search Results

SL30B60K Price and Stock

Filter by Manufacturer


Infineon Technologies AG AUIRGSL30B60K IGBT 600V 78A 370W TO262
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	AUIRGSL30B60K	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics	AUIRGSL30B60K		1,150		1	1 $2.38 10 $2.38 100 $2.23 1000 $2.02 10000 $2.02	Buy Now
Infineon Technologies AG IRGSL30B60KPBF IGBT 600V 78A 370W TO262
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRGSL30B60KPBF	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
International Rectifier IRGSL30B60KPBF
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	IRGSL30B60KPBF		950			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Rochester Electronics	IRGSL30B60KPBF		2,382		1	1 $1.33 10 $1.33 100 $1.25 1000 $1.13 10000 $1.13	Buy Now
ComSIT USA	IRGSL30B60KPBF		5,300			1 - 10 - 100 - 1000 - 10000 -	Get Quote
International Rectifier AUIRGSL30B60K
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	AUIRGSL30B60K		100			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Rochester Electronics	AUIRGSL30B60K		8,318		1	1 $2.38 10 $2.38 100 $2.23 1000 $2.02 10000 $2.02	Buy Now
ComSIT USA	AUIRGSL30B60K		50			1 - 10 - 100 - 1000 - 10000 -	Get Quote

SL30B60K Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
irf 1830 Abstract: 1085 CT 600v 30a IGBT TRANSISTOR D 1785 irf 44 n AN-994 C-150 IRGB30B60K IRGS30B60K IRGSL30B60K Text: PD - 94799A IRGB30B60K IRGS30B60K SL30B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	PDF	4799A IRGB30B60K IRGS30B60K IRGSL30B60K O-220AB O-262 AN-994. irf 1830 1085 CT 600v 30a IGBT TRANSISTOR D 1785 irf 44 n AN-994 C-150 IRGB30B60K IRGS30B60K IRGSL30B60K
Untitled Abstract: No abstract text available Text: PD - 94799A IRGB30B60K IRGS30B60K SL30B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	PDF	4799A IRGB30B60K IRGS30B60K IRGSL30B60K O-220AB O-262 AN-994.
Untitled Abstract: No abstract text available Text: PD - 97003 IRGB30B60KPbF IRGS30B60KPbF SL30B60KPbF INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology 10µs Short Circuit Capability Square RBSOA	Original	PDF	IRGB30B60KPbF IRGS30B60KPbF IRGSL30B60KPbF O-220AB IRGB30B60KPbF O-262 AN-994. O-220AB
AN-994 Abstract: C-150 IRGSL30B60K Text: PD - 97003 IRGB30B60KPbF IRGS30B60KPbF SL30B60KPbF INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology 10µs Short Circuit Capability Square RBSOA	Original	PDF	IRGB30B60KPbF IRGS30B60KPbF IRGSL30B60KPbF O-220AB IRGB30B60KPbF O-262 AN-994. O-220AB AN-994 C-150 IRGSL30B60K
SL30B60K Abstract: C-150 IRF530S IRGS30B60K IRGSL30B60K IRL3103L wf-3 Text: PD - 94741 IRGS30B60K SL30B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 150°C.	Original	PDF	IRGS30B60K IRGSL30B60K O-262 AN-994. SL30B60K C-150 IRF530S IRGS30B60K IRGSL30B60K IRL3103L wf-3
Untitled Abstract: No abstract text available Text: PD - 96334 AUTOMOTIVE GRADE AUIRGS30B60K SL30B60K INSULATED GATE BIPOLAR TRANSISTOR C VCES = 600V Features • • • • • • • Low V CE on Non Punch Through IGBT Technology 10µs Short Circuit Capability Square RBSOA Positive V CE(on) Temperature Coefficient	Original	PDF	AUIRGS30B60K AUIRGSL30B60K O-262 AUIRGSL30B60Knsible
irf 1830 Abstract: C-150 IRF1010 IRF530S IRGB30B60K IRGS30B60K IRGSL30B60K Text: PD - 94799 IRGB30B60K IRGS30B60K SL30B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	PDF	IRGB30B60K IRGS30B60K IRGSL30B60K O-220AB O-262 O-220AB AN-994. irf 1830 C-150 IRF1010 IRF530S IRGB30B60K IRGS30B60K IRGSL30B60K
IGBT 4000V Abstract: AN-994 C-150 AUIRGSL30B60K AUIRGS30B60K AUGS30B60K IGBT driver 4000V Text: PD - 96334 AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR AUIRGS30B60K SL30B60K C VCES = 600V Features • • • • • • • Low V CE on Non Punch Through IGBT Technology 10µs Short Circuit Capability Square RBSOA Positive V CE(on) Temperature Coefficient	Original	PDF	AUIRGS30B60K AUIRGSL30B60K O-262 IGBT 4000V AN-994 C-150 AUIRGSL30B60K AUIRGS30B60K AUGS30B60K IGBT driver 4000V
Untitled Abstract: No abstract text available Text: PD - 97003 IRGB30B60KPbF IRGS30B60KPbF SL30B60KPbF INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology 10µs Short Circuit Capability Square RBSOA	Original	PDF	IRGB30B60KPbF IRGS30B60KPbF IRGSL30B60KPbF O-220AB IRGB30B60KPbF O-262 O-220AB AN-994.
AN-994 Abstract: C-150 IRGB30B60K IRGS30B60K IRGSL30B60K Text: PD - 94799A IRGB30B60K IRGS30B60K SL30B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	PDF	4799A IRGB30B60K IRGS30B60K IRGSL30B60K O-220AB O-262 O-220AB AN-994 C-150 IRGB30B60K IRGS30B60K IRGSL30B60K