Untitled
Abstract: No abstract text available
Text: DIONICS-USA INCORPORATED Phone: 516 997-7474 Fax: (516) 997-7479 Website: www.dionics-usa.com 96-B Urban Avenue Westbury, NY 11590 DIG-2115-SM Photovoltaic MOSFET / IGBT Driver Features: Optically Isolated; High Isolation Resistance
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DIG-2115-SM
DIG-2115-SM
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SM 96 diode
Abstract: STH61004A STH61004G STH61005A STH61005G stm siemens Q62702-P3128 Siemens photodiode
Text: STH61004x STH61005x Target Specification 1300nm DFB Laser in Coaxial Package with SM-Pigtail, High Power • • • • • • Designed for application in high-speed and long-haul fiber-optic networks Laser Diode with Multi-Quantum-Well and gain coupled structure
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STH61004x
STH61005x
1300nm
STH61004G
STH61004A
STH61005G
STH61005A
Q62702-P3154
SM 96 diode
STH61004A
STH61004G
STH61005A
STH61005G
stm siemens
Q62702-P3128
Siemens photodiode
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IRF 1540
Abstract: STH91004A STH91004G STH91005A STH91005G stm siemens
Text: STH91004x STH91005x Target Specification 1550nm DFB Laser in Coaxial Package with SM-Pigtail, High Power • • • • • • Designed for application in high-speed and long-haul fiber-optic networks Laser Diode with Multi-Quantum-Well and gain coupled structure
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STH91004x
STH91005x
1550nm
STH91004G
STH91004A
STH91005G
STH91005A
Q62702-Pxxxx
IRF 1540
STH91004A
STH91004G
STH91005A
STH91005G
stm siemens
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STH61008A
Abstract: STH61008G STM-16 gain coupled DFB
Text: STH61008x Target Specification 1300nm DFB Laser in Coaxial Package with SM-Pigtail, High Power, with optical Isolator for 2,5GBit Application • • • • • • Designed for application in high-speed and longhaule fiber-optic networks Laser Diode with Multi-Quantum-Well and gain
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STH61008x
1300nm
STM-16)
STH61008G
STH61008A
Q62702-Pxxxx
STH61008A
STH61008G
STM-16
gain coupled DFB
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ph 41 zener diode
Abstract: J150A 13.8 8w zener diode GHM DIODE marking code SM diode Diode GHM GGR diode sg 82 do-214aB marking ghm J78A
Text: SURFACE MOUNT TVS & Zener Diodes TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Outline Part Peak Voltage Clamping Current & Leakage Dimensions in mm Number Reverse VBR @ IT Voltage
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DO-214AC
C3B05
ph 41 zener diode
J150A
13.8 8w zener diode
GHM DIODE
marking code SM diode
Diode GHM
GGR diode
sg 82 do-214aB
marking ghm
J78A
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marking code SM diode
Abstract: GGV diode GGT DIODE marking SM 98 tvs diode sma nu GHM 25 DIODE GHM DIODE ph 41 zener diode ggr 86 176/Diode Zener C 47 pH
Text: SURFACE MOUNT TVS & Zener Diodes TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Outline Part Peak Voltage Clamping Current & Leakage Dimensions in mm Number Reverse VBR @ IT Voltage
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DO-214AC
C3B05
marking code SM diode
GGV diode
GGT DIODE
marking SM 98
tvs diode sma nu
GHM 25 DIODE
GHM DIODE
ph 41 zener diode
ggr 86
176/Diode Zener C 47 pH
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bu 3 GDG 125
Abstract: marking CODE smb J36 diode 13.8 8w zener diode DO-214A sma marking sm RG DO-214AA smj58 24 DO-214A bu 450 GDF diode gde 61 81g diode
Text: SURFACE MOUNT Transient Voltage Suppressor TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Outline Part Peak Voltage Clamping Current & Leakage Dimensions in mm Number Reverse VBR @ IT Voltage
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C398BB02
C398BB03
bu 3 GDG 125
marking CODE smb J36 diode
13.8 8w zener diode
DO-214A sma
marking sm RG DO-214AA
smj58
24 DO-214A
bu 450 GDF
diode gde 61
81g diode
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IN5406 diode
Abstract: B32672P4684K TDK common mode choke film diode s1m c7 diode in5406
Text: Application Note 1876 Author: Alan Yu ISL6730BEVAL1Z and ISL6730DEVAL1Z: Boost CCM PFC for 300W Universal Input Adaptors Introduction Design Specifications This application note describes the design and implementation of a 390V, 300W, Continuous Conduction Mode CCM Boost
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ISL6730BEVAL1Z
ISL6730DEVAL1Z:
ISL6730B,
ISL6730D.
ISL6730D
ISL6730B
ISL6730D
FN8258)
ERJ-8GEYJ205
IN5406 diode
B32672P4684K
TDK common mode choke film
diode s1m c7
diode in5406
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Untitled
Abstract: No abstract text available
Text: i 19-7085; R e v i; 10/96 y k iy j x iy k i Dual-Channel CardBus and PCMCIA Pow er Sw itches with SM Bus Serial Interface Features Genera! Description _ ♦ Supports Two CardBus Sockets ♦ 1A, 0.08Q Max VY VCC Switch MAX1601 only
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MAX1601
28-PiX
5fi7bb51
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ZEN100
Abstract: sm 4500 SM 8452
Text: Micmsemi Zener Regulator Diodes Part Number ZEN MLL5949D MLL59490-1 SMBJ5949B SMBJ4764 SMBJ4764A 1N4490 1N4490US 1N5950A 1N5950B 1N5950C 1N5950D JAN1N4490 JAN1N4490US JANS1N4490 JANS1N4490US JANTX1N4490 JANTX1N4490US JANTXV1N4490 JANTXV1N4490 US IUILL5950B
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DO-213AB
DO-213AA
DO-41
DO-41
DO-213AB
ZEN100
sm 4500
SM 8452
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J476
Abstract: 2EZ100D
Text: Zener Regulator Diodes S M A J4761C SM A J4761D 2EZ82D 5 S M A J4762 SM A J4762A S M A J4762C SM A J4762D 2EZ91D 5 S M A J4763 SM A J4763A S M A J4763C S M A J4763D 2EZ100D 5 S M A J4764 S M A J4764A S M A J4764C SM A J4764D 2EZ110D 5 2EZ120D 5 2EZ130D 5 2EZ140D 5
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J4761C
J4761D
2EZ82D
J4762
J4762A
J4762C
J4762D
2EZ91D
J4763
J4763A
J476
2EZ100D
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Untitled
Abstract: No abstract text available
Text: K n o x S e m ic o n d u c t o r , I n c . SILICON HYPERABRUPT TUNING DIODES The SM V1400 Series o f hyperabrupt varactors offer high capacitance ratios with linear tuning between 2 and 8 volts. The units are available over a broad range junction capacitances, satisfying a large num ber o f broadband applications thru the
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V1400
OT-23
OD-323
SMV1402
SMV1412
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sm 4105
Abstract: No abstract text available
Text: Zener Regulator Diodes M/crasem/ ; JANTXV1N4491 US 1N5952A 1N5952B 1N5952C 1N5952D MLL5952B MLL5952B-1 MLL5952C MLL5952C-1 MLL5952D MLL5952D-1 SMBJ5952B 1N4492 1N4492US JAN1N4492 JAN1N4492US JANS1N4492 JANS1N4492US JANTX1N4492 JANTX1N4492US JANTXV1N4492 JANTXV1N4492US
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DO-41
-213AB
-213AA
DO-213AB
sm 4105
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4478U
Abstract: 1N4479 jan 1n4478 MLL5938D
Text: Zener Regulator Diodes ZEN ! M icrosem i I D ivision I Package O utline Typei Mil ! Spec Data P ow er] Vz Izt S heet ID W I <v> ¡ (m A) MLL5937D Scottsdale D O-213AB SM 12926 MLL5937D-1 Scottsdale SM SM B J5937B Scottsdale DO -213AA SMBJ SM 21558 15237
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O-213AB
-213AA
DO-41
O-213AA
-213AB
MLL5939C
-213AA
2EN-94
4478U
1N4479
jan 1n4478
MLL5938D
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Untitled
Abstract: No abstract text available
Text: K n o x S e m ic o n d u c t o r , I n c . SILICON HYPERABRUPT TUNING DIODES The SMV1400 Series of hyperabrupt varactors offer high capacitance ratios with linear tuning between 2 and 8 volts. The units are available over a broad range junction capacitances, satisfying a large number of broadband applications thru the
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SMV1400
OT-23
SMV1402
SMV1412
SMV1403*
SMV1404
SMV1405*
SMV1406
SMV1407
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d 379
Abstract: No abstract text available
Text: v C o rp . he diode experts SCOTTSDALE, A Z For more information call: SANTA ANA, CA 602 941-6300 SM 1.4KESDS.O thru SM 1.4KESD 170A SURFACE MOUNT Features 1 Protects S ensitive C ircu its From S h o rt D u ra tio n Fast Rise Tim e Tran sien ts such as Ele ctro -S tatic-D isch a rg e (ESD) or Electrical
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quD30A
4KESD33A
4KESD36A
4KESD40
4KESD40A
4KESD43
S043A
4KESD45A
4KESD48
4KESD48A
d 379
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SMD 236 DIODE
Abstract: No abstract text available
Text: K n o x S e m ic o n d u c t o r , I n c SILICON HYPERABRUPT TUNING DIODES The SMV1400 Series o f hyperabrupt varactors offer high capacitance ratios with linear tuning between 2 and 8 volts. The units are available over a broad range junction capacitances, satisfying a large number of broadband applications thru the
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OCR Scan
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SMV1400
OT-23
OD-323
SMV1402
SMV1412
SMV1403*
SMV1404
SMV1405*
SMV1406
SMD 236 DIODE
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f6l20u
Abstract: 1FK70 f6l20 f10l60 18smd 10L20U D6L20U D3L20 30L60
Text: Super Fast Recovery Diodes High fre q u e n c y re c tify in g S TO -220 Lead type Single Diodes FTO-220 A bsolute M axim um Ratings Type No. V rm lo Conditions Ifsm Electrical C haracteristics [A] [°C] [A] rc] [°C] 25 -5 5 -1 5 0 150 200 1 40 400 0.9
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D1NL20U
D1NF60
1FK70
1FL20U
D1FL20U
D2FL20U
S2L20U
D2L20U
D3L20U
S3L20U
f6l20u
f6l20
f10l60
18smd
10L20U
D6L20U
D3L20
30L60
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V1403
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Hyper-Abrupt "Tuning Diodes MV1403 MV1404 MV1405 These devices are designed with high capacitance and a capacitance change of greater than TEN T IM E S for a bias change from 2.0 to 10 volts. They provide tuning
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MV1403
MV1404
MV1405
V1403
V1404
MV1405
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XcxxX
Abstract: sm1628c sM1628 sm4045 SM40-45CXC374 SM04-16CXC190 SM14-21CXC224 SM1628CXC144 SM1421 SM*HXC166
Text: Fast Recovery Diodes - Capsule Types Product une of WISTCODi A n O IX Y S Com pany Type Vrb« ^FAV @TS=55°C V ^F RMS max @TS=25°C Typ.Fieverse Recovery charge &Tyf . Reverse Recoviïrytime 10ms Tj Max (50% Cho rd) VR<60%Vrhm A A Qra uC trr Vf at lF ^FSM
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SM12-18CXC100
SM16-25CXC134
SM16-28CXC144
SM08-14CXC170
SM12-20CXC174
SM12-20CXC176*
SM04-16CXC190
SM30-45HXC084
SM30-35HXC103
SM35-45HXC164
XcxxX
sm1628c
sM1628
sm4045
SM40-45CXC374
SM14-21CXC224
SM1628CXC144
SM1421
SM*HXC166
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AX057
Abstract: AX078 DE10P3 D2S6M
Text: Schottky Barrier Diodes High frequency rectifying Single A Surface Mount G1F Type No. V rm [VI ☆DG1H3 ☆DG1M3 M1FP3 ☆ DG1H3A ☆ DG1M3A M1FH3 D1FP3 ☆ D1FH3 D3FP3 M1FM3 D1FM3 -&-M2FH3 [A] t 'C ' 1.0 113 1.29 1.5 1.5 1.5 25' 107 1.0 30 ^ fAl r°r.i Tj
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DE10P3
E10S3L
D1FJ10
D1NJ10
AX057
AX078
AX057
D2S6M
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EUPEC DD 104 N 16
Abstract: EUPEC DD 105 N 16 L EUPEC DD 31 800 EUPEC DD 600 eupec dd 76 n 1200 EUPEC DD 171 N EUPEC DD 89 DD 85 N 1600 EUPEC DD 105 N 16 157000
Text: Type V rrm V r sm 'frm sm = V r rm blE D EUPEC Rectifier diode modules If s m / i 2d t Ifa vm ^ c 34Q32T? V TD Tt R th JC GEH « U P E C R thC K •tvj m a x Outline + 100 V A V 10 ms, 10 ms, t vj = tv i = ty j m ax tv j max f'.’j max fv j max 180 “el
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34Q32T?
EUPEC DD 104 N 16
EUPEC DD 105 N 16 L
EUPEC DD 31 800
EUPEC DD 600
eupec dd 76 n 1200
EUPEC DD 171 N
EUPEC DD 89
DD 85 N 1600
EUPEC DD 105 N 16
157000
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smd diode f54
Abstract: 18t0045 smd f54 209DMQ 20F0040 209DMQ150 50W005F 15CT0035 smd diode K10 209CMQ150
Text: Other Products from IR Schottky Diode Surface Mount - Discrete 0 .7 7 - 20 Am ps 'F AV @ TC Case Outline >RM@ Rated V r w m Part Number VRRM (A) 1.1 (°C) 10MQ040 00 40 92 (V) 0.51 10MQ060 10MQ090 60 90 0 .77 0 .77 110 110 0.57 0.65 _ _ 7.5 5.0 15MQ040
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10MQ040
10MQ060
10MQ090
15MQ040
10BQ015
10BQ040
10BQ060
10BQ100
30BQ015
30BQ040
smd diode f54
18t0045
smd f54
209DMQ
20F0040
209DMQ150
50W005F
15CT0035
smd diode K10
209CMQ150
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dd 22 s 800
Abstract: fast diode SM 46 DD 53 S 1200 K
Text: Fast diode modules Type If r m s m V rrm V r sm = V rrm + 5 0 V 1 Ip S M /'¡2dt V TO) It Irm R th jc 10 ms, 10 ms, t„ = tv,= t, 180 “el tv i max t ,i max tv, max tv j max -di/dt - I favm ^ c = tv j max R th C K tv , m a x Outline sin. 100 A/us A V A
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