Untitled
Abstract: No abstract text available
Text: MORE HYPERABRUPT TUNING DIODES D&] e le c t r o n ic s The large capacitance tuning ratio in the hyperabrupts listed here make them suitable for broad band tuning applications. Their large values of nominal capacitance are for A M applications with the lower capacitance
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V1412
V1408
V1409
MV1410
MV1401
43Sc2
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mv1404
Abstract: No abstract text available
Text: MOTOROLA Order this document by MV1403/D SEMICONDUCTOR TECHNICAL DATA Silicon Hyper-Abrupt Tlining Diodes MV1403 V1404 MV1405 These devices are designed with high capacitance and a capacitance change of greater than TEN TIMES for a bias change from 2.0 to 10 volts. They provide tuning
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MV1403/D
MV1403
MV1404
MV1405
V1403
V1404
MV1405
DO-204AA)
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EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main
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V1404
Abstract: No abstract text available
Text: MV1403 MVI404 MVI405 SILICON HYPER-ABRUPT TUNING DIODES . . . d e s ig n e d w ith high c ap acitan c e an d a c ap acitan c e c h a n g e o f g re a te r th a n T E N T IM E S fo r a bias c h a n g e fro m 2.0 to 10 voits. P rovides tu n in g o v e r b ro ad fre q u e n c y ranges; tu n e s A M radio bro ad cast b an d , g en e ra l AFC
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MV1403
MVI404
MVI405
V1404
MV1405
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V1403
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Hyper-Abrupt "Tuning Diodes MV1403 V1404 MV1405 These devices are designed with high capacitance and a capacitance change of greater than TEN T IM E S for a bias change from 2.0 to 10 volts. They provide tuning
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MV1403
MV1404
MV1405
V1403
V1404
MV1405
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powec rm 1110
Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Text: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor
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111ii
MZ5558
Z5555,
Z5556,
MZ5557
powec rm 1110
rm 1100 powec
MPC1000
transistors JX 6822 A
inverter welder 4 schematic
SAA 14Z
transistor SI 6822
stg 8810
PL 15Z DIODE
germanium transistor
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transistors BC 557C
Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Text: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and
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Untitled
Abstract: No abstract text available
Text: I nternational S em ico nducto r , TMV1401 thru TMV1412 in c . SILICON HYPERABRUPT TUNING DIODES .1T6 ~ r~ .1 7 0 o.s F Min 1051 4 « " h Pin 1: Anode Pin 2: Cathode l\inlng Ratio TR (CT) Civ/C,ov pF @ IV, 1M H z pF @ 2V, 1MHZ Num ber Min Nom Max Min TNI V I 401
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TMV1401
TMV1412
TMV1400
V1412
1769C
TD0G37Ã
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MV1401
Abstract: U05C MV1404 MV1403 MV1405
Text: MV1401, MV1403 SILICON MV 1404, MV1405 W C - ► II HIGH T U N IN G RATIO VO LTAG E - VA R IA B LE CAPACITANCE DIODES SILICON HYPER-ABRUPT JUNCTION TUNING DIODES 120 -55 0 pF 12 V O L T S . . . designed w ith a capacitance change o f greater than T E N T IM E S
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MV1401,
V1403
V1401
V1404
25edance
MV1401)
33AS8)
si/16"
MV1401
U05C
MV1404
MV1403
MV1405
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JE1100
Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices
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MHW721A2
Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA
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1PHX11136Q-14
MHW721A2
13001 S 6D TRANSISTOR
atv5030* motorola
2N5591 MOTOROLA
13001 6D TRANSISTOR
BGY41
MHW710-1
construction linear amplifier 2sc1945
7119 amperex
bf503
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Untitled
Abstract: No abstract text available
Text: M S I •f ^ q -j ~/ f ELECTRONICS INC 1QE 0 | SbSb4bb D0D03Sfi S | DtfDSD MORE HYPERABRUPT TUNING DIODES electronics m e. The large capacitance tuning ratio in the hyperabrupts listed here make them suitable for broad band tuning applications. Their large values of
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D0D03Sfi
nitsV1407
V1408
V1409
V1410
V1411
V1412
MV1401
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Untitled
Abstract: No abstract text available
Text: MORE HYPERABRUPT TUNING DIODES D M D S D electronics m e The large capacitance tuning ratio in the hyperabrupts listed here make them suitable for broad band tuning applications. Their large values of nominal capacitance are for A M applications with the lower capacitance
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DO-14
V1407
V1408
V1409
V1410
V1412
MV1401
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v1402
Abstract: No abstract text available
Text: MORE HYPERABRUPT TUNING DIODES S E R IE S M V 1 4 0 1 -M V 1 4 1 2 The large capacitance tu n in g ratio in the hyperabrupts listed here make them suitable for broad band tu n in g applications. T heir large values of nom inal capacitance are for A M applications w ith the low er capacitance
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MV1401
v1402
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DO-204AB
Abstract: DD77M53 high temperature reverse bias Am tuning DIODE MMBV432 MMBV432L MV104 MV104G MV1403 MV1404
Text: 6367255 MOTOROLA SC <DIODES/OPTO> 89D 77453 "*• General Purpose Abrupt Junction Tuning Diodes continued AT l - O DE | b 3 b 7 2 5 S 1 DD77M53 TYPICAL CH ARACTERISTICS Diode Capacitance versus Reverse Voltage (TO-236AB) Style 9 Ä F M Style 15 W CASE 29-02
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b3b725S
DD77M53
O-236AB)
O-226AA)
C3/C30
MV104G
MV104
MMBV432Ã
MIL-STD-202,
MIL-STD-750,
DO-204AB
DD77M53
high temperature reverse bias
Am tuning DIODE
MMBV432
MMBV432L
MV104
MV104G
MV1403
MV1404
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mv1401
Abstract: rn550
Text: MOTOROLA MV1401, MV I403, V1404, MV1405, SEMICONDUCTOR TECHNICAL DATA H H H H Tuning Diodes H IG H T U N IN G R A T IO V O L T A G E -V A R IA B L E C A P A C IT A N C E D IO D E S SILICON HYPER-ABRUPT TUNING DIODES . . . designed w ith high capacitance and a capacitance change of
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MV1401,
MV1404,
MV1405,
mv1401
rn550
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Untitled
Abstract: No abstract text available
Text: MV1403 V1404 MVI405 SILICON HYPER-ABRUPT TUNING DIODES . . . d e s ig n e d w it h h ig h c a p a c it a n c e a n d a c a p a c it a n c e c h a n g e o f g r e a t e r t h a n T E N T I M E S f o r a b ia s c h a n g e f r o m 2 .0 t o 10 v o lt s . P r o v id e s t u n in g
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MV1403
MV1404
MVI405
DO-204AA)
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Untitled
Abstract: No abstract text available
Text: Iffif M MORE HYPERABRUPT TUNING DIODES ^ e le c t r o n ic s m e. S E R IE S M V I 4 0 1 -M V 1 4 1 2 The large capacitance tuning ratio in the hyperabrupts listed here make them suitable for broad band tuning applications. Their large values of nom inal capacitance are for A M applications with the lower capacitance
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MV1401
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uv photodiode, GaP
Abstract: UV100BG-DUAL UV-140BQ-4 UV-140-2 UV-140BQ-2 uv photodiode UV-100BG 140BQ uv 100bg UV-100BQ
Text: E fi & fi/CANAKA/OPTOELEK UV Series: 47E D • 3030bl0 00 003 10 2 * C A N A -V/-55 Multi-Element_ Features • • • • Cross Talk < 1% Between Elements Linearity Over W ide Dynamic Range Flat Noise Spectrum to DC Oxide Passivated Structure •
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303Gb
UV-100BG
UV-100BQ
UV-140BQ-2
UV-140BQ-4
UV-140-4
UV-140-2
UV-140-4
UV-140-2/UV-140-4
uv photodiode, GaP
UV100BG-DUAL
UV-140BQ-4
UV-140-2
uv photodiode
140BQ
uv 100bg
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