Untitled
Abstract: No abstract text available
Text: SRAM MT5C2561 Austin Semiconductor, Inc. 256K x 1 SRAM PIN ASSIGNMENT Top View AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-88725 • SMD 5962-88544 • MIL-STD-883 24-Pin DIP (C) (300 MIL) 28-Pin LCC (EC) A8 A7 A6 Vcc A17 SRAM MEMORY ARRAY 3 2 1 28 27
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MT5C2561
MIL-STD-883
24-Pin
28-Pin
-8872503LX
5962-8872504LX
MT5C2561EC-35/883C
MT5C2561EC-45/883C
MT5C2561EC-55/883C
MT5C2561EC-70/883C
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smd a17
Abstract: No abstract text available
Text: SRAM MT5C2561 Austin Semiconductor, Inc. 256K x 1 SRAM PIN ASSIGNMENT Top View AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-88725 • SMD 5962-88544 • MIL-STD-883 24-Pin DIP (C) (300 MIL) 28-Pin LCC (EC) A8 A7 A6 Vcc A17 SRAM MEMORY ARRAY 3 2 1 28 27
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Original
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MIL-STD-883
MT5C2561
MT5C2561C-55L883C
MT5C2561C-70L883C
5962-8872501LX
5962-8872502LX
5962-8872503LX
5962-8872504LX
5962-8854401LX
5962-8854402LX
smd a17
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smd transistor a9
Abstract: a15 SMD A19 SMD smd marking A5 10 35L A16 SMD SMD A18 Transistor SMD a7 Transistor smd diode a5 MT5C1001
Text: SRAM MT5C1001 Limited Availability Austin Semiconductor, Inc. 1M x 1 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-92316 • MIL-STD-883 A10 A11 A12 A13 A14 A15 NC A16 A17 A18 A19 Q WE\ Vss FEATURES •
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Original
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MT5C1001
MIL-STD-883
32-Pin
28-Pin
MT5C1001DCJ-20L/883C
MT5C1001DCJ-20/883C
MT5C1001DCJ-25L/883C
MT5C1001DCJ-25/883C
MT5C1001DCJ-35L/883C
smd transistor a9
a15 SMD
A19 SMD
smd marking A5
10 35L
A16 SMD
SMD A18 Transistor
SMD a7 Transistor
smd diode a5
MT5C1001
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A13 smd
Abstract: SMD a7 Transistor MT5C1001 a15 SMD
Text: SRAM MT5C1001 Limited Availability Austin Semiconductor, Inc. 1M x 1 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-92316 • MIL-STD-883 A10 A11 A12 A13 A14 A15 NC A16 A17 A18 A19 Q WE\ Vss FEATURES •
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Original
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MT5C1001
MIL-STD-883
32-Pin
28-Pin
MT5C1001DCJ-20L/883C
MT5C1001DCJ-20/883C
MT5C1001DCJ-25L/883C
MT5C1001DCJ-25/883C
MT5C1001DCJ-35L/883C
A13 smd
SMD a7 Transistor
MT5C1001
a15 SMD
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a15 SMD
Abstract: No abstract text available
Text: SRAM MT5C1001 Limited Availability 1M x 1 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-92316 • MIL-STD-883 A10 A11 A12 A13 A14 A15 NC A16 A17 A18 A19 Q WE\ Vss FEATURES • • • • • • • 32-Pin LCC (EC)
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Original
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MT5C1001
MIL-STD-883
28-Pin
32-Pin
memor83C
5962-9231608MZA
5962-9231604MZA
5962-9231607MZA
5962-9231603MZA
a15 SMD
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SMD MARKING A16
Abstract: No abstract text available
Text: SRAM MT5C1001 Limited Availability 1M x 1 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-92316 • MIL-STD-883 A10 A11 A12 A13 A14 A15 NC A16 A17 A18 A19 Q WE\ Vss FEATURES • • • • • • • 32-Pin LCC (EC)
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Original
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MT5C1001
MIL-STD-883
28-Pin
32-Pin
memor83C
5962-9231608MZA
5962-9231604MZA
5962-9231607MZA
5962-9231603MZA
SMD MARKING A16
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Untitled
Abstract: No abstract text available
Text: MT5C2561 883C 256K X 1 SRAM MILITARY SRAM • • • • PIN ASSIGNMENT Top View SMD 5962-88725 JAN M 38510/293 MIL-STD-883, Class B Radiation tolerant (consult factory) 24L/300 DIP (D-9) A0 C1 -W24 ]Vcc A1 [ 2 23 ]A17 A2 Û3 22 PA16 21 ]A15 A3 A4 20 ]A14
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OCR Scan
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MT5C2561
MIL-STD-883,
24L/300
MIL-STD-883
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256k x 8 SRAM
Abstract: SRAM 8T 256K x 8 SRAM dip
Text: WHITE /MICROELECTRONICS □ WS256K8-XCX 256Kx8 SRAM MODULE, SMD 5962-93157 FEATURES FIG. 1 • A ccess Times 20, 25, 35, 45ns PIN CONFIGURATION TOP VIEW W 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 U □ □ □ H □ □ □ Vcc A15 A17 w i A13 A8 A9
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OCR Scan
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WS256K8-XCX
256Kx8
IL-STD-883
06HXX
07HXX
08HXX
256k x 8 SRAM
SRAM 8T
256K x 8 SRAM dip
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Untitled
Abstract: No abstract text available
Text: WHITE M I C R O E L E C T R O N I C S WE512K8, WE256K8, WE128K8-XCX 512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 512Kx8 BIT CM OS EEPROM MODULE FEATURES FIG. 1 PIN C O N F IG U R A T IO N T O P V IE W 32 □ V . 31 □ WE 30 □ A17 A18C 1 A16C 2 A15C 3
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OCR Scan
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WE512K8,
WE256K8,
WE128K8-XCX
512Kx8
WE512K8-XCX,
300nS
MIL-STD-883
Typical/100mA
512Kx
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UA15
Abstract: No abstract text available
Text: WHITE /M IC R O E L E C T R O N IC S W S512K8-XCX 512Kx8 SRAM MODULE, SMD 5962-92078 FEATURES FIG. 1 PIN CONFIGURATION TOP VIEW ^ 32 31 30 29 28 27 26 25 24 D Vcc ÜA15 J A17 HWË H A13 H A8 H A9 U A11 Access Tim es 20, 25, 35, 45ns • S tandard M ic ro c irc u it D raw ing , 5962-92078
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OCR Scan
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S512K8-XCX
512Kx8
I/02C
MIL-STD-883
06HTX
07HTX
08HTX
09HTX
UA15
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Untitled
Abstract: No abstract text available
Text: TT W S512K8-XCX 1/1/HITE / M I C R O E L E C T R O N I C S 512Kx8 SRAM MODULE, SMD 5962-92078 FEATURES FIG. 1 PIN CONFIGURATION TOP VIEW A18 C 1 A 1 6C 2 ^ 32 31 30 □ A17 A I2 C 4 A7C 5 29 □ WË A6 C 6 27 □ A8 A5 C 7 26 □ A9 3 A ccess Tim es 55, 70, 8 5 , 1 0 0 , 120ns
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OCR Scan
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S512K8-XCX
512Kx8
120ns
MIL-STD-883
01HXX
02HXX
03HXX
04HXX
05HXX
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smd a17
Abstract: SCD112
Text: Power Inductor SMD TYPE SCD112 TYPE FEATURES APPLICATIONS Tolerance of inductance 1~47uH 20% Low profile: 2.2mm Max Suitable for SMD automachine & reflow soldering Mobile phones Digital cameras Pagers Notebook computers PC cards E A 1.6 6.5 SCHEMATICS SCD112
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SCD112
SCD112
100KHz,
SCD112-1R0
SCD112-1R5
SCD112-2R2
SCD112-3R3
SCD112-4R7
SCD112-6R8
smd a17
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S512K8N
Abstract: smd A018 3 pin smd A018 SCD1664 5962-9561307HYC ACT-S512K8 5962-9561310HUC
Text: ACT–S512K8 High Speed 4 Megabit Monolithic SRAM Features Low Power Monolithic CMOS 512K x 8 SRAM • Full Military -55°C to +125°C Temperature Range ■ Input and Output TTL Compatible Design ■ Fast 17,20,25,35,45 & 55ns Maximum Access Times ■ +5 V Power Supply
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Original
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S512K8
MIL-PRF-38534
DI-40
MIL-STD-883
SCD1664
S512K8N
smd A018 3 pin
smd A018
5962-9561307HYC
ACT-S512K8
5962-9561310HUC
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smd A018
Abstract: No abstract text available
Text: ACT–S512K8 High Speed 4 Megabit Monolithic SRAM Features • Low Power Monolithic CMOS 512K x 8 SRAM ■ Full Military -55°C to +125°C Temperature Range ■ Input and Output TTL Compatible Design ■ Fast 17,20,25,35,45 & 55ns Maximum Access Times ■
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S512K8
MIL-PRF-38534
MIL-STD-883
SCD1664
smd A018
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Untitled
Abstract: No abstract text available
Text: ACT–S512K32 High Speed 16 Megabit SRAM Multichip Module Features • 4 Low Power CMOS 512K x 8 SRAMs in one MCM ■ Factory configured as 512K x 32; User configurable as 1M x 16 or 2M x 8 ■ Input and Output TTL & CMOS Compatible Design ■ Fast 17,20,25,35,45,55ns Access Times
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S512K32
MIL-STD-883
MIL-STD-883
SCD1660
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military mcm 1553
Abstract: SMD A18 Transistor O28 Package smd transistor A8 ACT-S512K32V smd A018
Text: ACT-S512K32V High Speed 3.3Volt 16 Megabit SRAM Multichip Module Features 4 Low Power CMOS 512K x 8 SRAMs in one MCM Overall configuration as 512K x 32 • Input and Output TTL Compatible ■ 17, 20, 25, 35 & 45ns Access Times, 15ns Available by Special Order
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ACT-S512K32V
MIL-PRF-38534
MIL-STD-883
ACT-S512K32V
SCD3360
military mcm 1553
SMD A18 Transistor
O28 Package
smd transistor A8
smd A018
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MT29F2G16AADWP
Abstract: 7SDMM-B0-2211 7SDMM-B0-2211-A PB20 LQFP144 PA10 PA11 PA13 PA15 PA16
Text: 5 4 3 2 1 SAM3U-EK RevB Block Diagram D D ATMEL Cortex M3 Processor SAM3U LQFP144 Reset,Debug Logic Power Manage C C Audio DAC SD/MMC Card PSRAM Accelerometer B Temperature sense Nand Flash USB & UART 2.8 Inch TFT-LCD B User Interface (PIO PortA,B,C) A A
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Original
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LQFP144)
19-MAY-09
20-JAN-10
03-FEB-09
MT29F2G16AADWP
7SDMM-B0-2211
7SDMM-B0-2211-A
PB20
LQFP144
PA10
PA11
PA13
PA15
PA16
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MT29F2G16AADWP
Abstract: 7SDMM-B0-2211-A BN03K314S600R DFSDM sam3u-ek KY001 7020-144-6-08 BN03K314S 7SDMM-B0-2211 BN03K314S300R
Text: 5 4 3 2 1 SAM3U-EK RevB Block Diagram D D ATMEL Cortex M3 Processor SAM3U LQFP144 Reset,Debug Logic Power Manage C C Audio DAC SD/MMC Card PSRAM Accelerometer B Temperature sense Nand Flash USB & UART 2.8 Inch TFT-LCD B User Interface (PIO PortA,B,C) A A
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LQFP144)
19-MAY-09
03-FEB-09
MT29F2G16AADWP
7SDMM-B0-2211-A
BN03K314S600R
DFSDM
sam3u-ek
KY001
7020-144-6-08
BN03K314S
7SDMM-B0-2211
BN03K314S300R
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bipolar transistor tester
Abstract: WS512K8-XCX
Text: White Electronic Designs WS512K8-XCX 512Kx8 SRAM MODULE, SMD 5962-92078 FEATURES Access Times 20, 25, 35, 45ns Organized as 512K x 8 Standard Microcircuit Drawing, 5962-92078 5V Power Supply MIL-STD-883 Compliant Devices Available Low Power CMOS Rad Tolerant Devices Available
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WS512K8-XCX
512Kx8
MIL-STD-883
A0-18
06HTX
07HTX
08HTX
09HTX
bipolar transistor tester
WS512K8-XCX
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PDF
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WS512K8-XCX
Abstract: No abstract text available
Text: White Electronic Designs WS512K8-XCX 512Kx8 SRAM MODULE, SMD 5962-92078 FEATURES Access Times 20, 25, 35, 45ns Organized as 512K x 8 Standard Microcircuit Drawing, 5962-92078 5V Power Supply MIL-STD-883 Compliant Devices Available Low Power CMOS
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WS512K8-XCX
512Kx8
MIL-STD-883
A0-18
06HTX
07HTX
08HTX
09HTX
WS512K8-XCX
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smd code F18
Abstract: act-s512k32n 5962-9461110HTC ACT-S512K32N-017P7Q 5962-9461110 CQFP 80 footprint cqfp 280
Text: ACT–S512K32 High Speed 16 Megabit SRAM Multichip Module Features • 4 Low Power CMOS 512K x 8 SRAMs in one MCM ■ Factory configured as 512K x 32; User configurable as 1M x 16 or 2M x 8 ■ Input and Output TTL & CMOS Compatible Design ■ Fast 17,20,25,35,45,55ns Access Times
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S512K32
MIL-PRF-38534
MIL-STD-883
SCD1660
smd code F18
act-s512k32n
5962-9461110HTC
ACT-S512K32N-017P7Q
5962-9461110
CQFP 80
footprint cqfp 280
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PDF
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COBRA5272
Abstract: sentec HALO TG110-S050N2 TG110-S050N2 smd diode a9 sub-d9F LM2596 SMD DIODE A13 BLM41PG600SN1L TG110S050N2
Text: 5 4 3 2 1 D D +3.3V Switcher L2 U4 100nF SMD0805 + + C4 Power D14 LED Low Current + 220µF/10V SMD 1812 R1 1k C3 LM2596-3.3/TO263 Ringkern 35µH 220µF/10V SMD 1812 FB ON/OFF 2 220µF/10V SMD 1812 100nF SMD0805 4 5 OUT D13 B + VIN C12 C1 CON 1 C2 1000µF/35V radial
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100nF
SMD0805
F/10V
LM2596-3
3/TO263
SCHOTTKY31
SMD1812
COBRA5272
sentec
HALO TG110-S050N2
TG110-S050N2
smd diode a9
sub-d9F
LM2596
SMD DIODE A13
BLM41PG600SN1L
TG110S050N2
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1 mega ohms resistor
Abstract: No abstract text available
Text: INNOVATIVE IMM1841 256K X 32 SRAM Module Features • • • • • • • • • • • 4.5V - 5.5V Operation Variable speed CMOS SRAMs modules Low active power —2.64W max. Low standby power —11.0 mW (max.) Automatic power-down when deselected
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IMM1841
IMM1841
I/O0-I/O31
IMM1841APZ-45C
IMM1841APZ-35C
1 mega ohms resistor
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PDF
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F16 - 100 HIP
Abstract: F16 100 HIP K8N05
Text: ÛEROFLEX Features Cl RCJTTECHNOLOGY • Low Power Monolithic CMOS 512K x 8 SRAM ■ Full Military -5 5 °C to +125°C Temperature Range ■ Input and Output TTL Compatible Design ■ Fast 17,20,25,35,45 & 55nS Maximum Access Times ■ +5 V Power Supply
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OCR Scan
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MIL-PRF-38534
ACT-S512K8
MIL-STD-883
S512K8-A
F16 - 100 HIP
F16 100 HIP
K8N05
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