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    SMD DIODE CODE S1 Search Results

    SMD DIODE CODE S1 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    SMD DIODE CODE S1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Bridge Diode SMD/DIP •外観図 OUTLINE S1NB□ Unit : mm Package：1N（SMD） 800V 1A 6.8 ④ 特長 • 小型 SMDパッケージ または • 小型 DIP パッケージ 級表示（例） Class S1NB 6094 ② ロット記号（例） ③ Date code


    Original     		PDF

    smd diode A2

    Abstract: A2 diode smd BO15N
    Text: CAT.No.TU158 中容量 SMD型 ダイオードアレイ MEDIUM POWER SMD DIODE ARRAY S1NAD80 外形寸法 Outline Dimensions Package：1NA ③ ロット記号 Date code （1.5） 10 +-0.3 A K AD 80 BO15N （1.2） （8.7） 管理番号 Control No. ソルダリングパットの参考パターン


    Original     		PDF TU158 S1NAD80 BO15N 101mm2 smd diode A2 A2 diode smd BO15N

    Z60N

    Abstract: No abstract text available
    Text: Bridge Diode Dual In-Line Package OUTLINE S1ZB Package 1Z 800V 0.8A • • Unit : mm Weight : 0.13 typ. SMD ④ ① ④− ＋① ③~ ∼② Z62N DIP 品名略号 Type No. ③ ロット記号（例） ② Date code Feature • Small-DIP • High-Reliability


    Original     		PDF J534-1 Z60N

    s1nb

    Abstract: No abstract text available
    Text: Bridge Diode Dual In-Line Package OUTLINE S1NB 6.8 800V 1A ④ 品名略号 Type No. • Unit : mm Weight : 0.29g typ. Package 1N SMD DIP 級表示（例） Class Feature ① S1NB 6094 ①＋ ③~ ②∼ 10 ② ロット記号（例） ③ Date code • Small-DIP


    Original     		PDF J534-1 s1nb

    smd diode code g3

    Abstract: smd diode code g4 smd diode g6 DIODE S4 39 smd diode smd diode S4 smd diode code mj smd diode S6 DIODE marking S4 45 SMD S6 55 A smd diode code SL SMD diode MARKING CODE g6
    Text: Advanced Technical Information Three phase full Bridge GWM 160-0055X1 VDSS = 55 V ID25 = 160 A RDSon typ. = 2.3 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TJ = 25°C to 150°C


    Original     		PDF 160-0055X1 160-0055X1-BL 160-0055X1-SL 160-0055X1-SMD 160-0055X1 smd diode code g3 smd diode code g4 smd diode g6 DIODE S4 39 smd diode smd diode S4 smd diode code mj smd diode S6 DIODE marking S4 45 SMD S6 55 A smd diode code SL SMD diode MARKING CODE g6

    smd diode S4

    Abstract: smd diode code g3 SMD MARKING CODE 503 K smd diode S6 S4 DIODE S6 diode smd diode marking code L2 SMD MARKING g3 smd diode code s6 SMD MARKING g5
    Text: GWM 220-004P3 Three phase full Bridge VDSS = 40 V ID25 = 190 A RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings


    Original     		PDF 220-004P3 diod007 20070628b 220-004P3-SL 220-04P3-BL 220-004P3 smd diode S4 smd diode code g3 SMD MARKING CODE 503 K smd diode S6 S4 DIODE S6 diode smd diode marking code L2 SMD MARKING g3 smd diode code s6 SMD MARKING g5

    Diode smd s6 68

    Abstract: S4 42 DIODE smd diode g6 DIODE S4 39 smd diode DIODE marking S6 77 smd diode g6 smd diode S6 Diode smd s6 68 g1 S3 marking DIODE smd diode code 03a smd diode marking 77
    Text: GWM100-0085X1 Three phase full Bridge VDSS = 85 V = 103 A ID25 RDSon typ. = 5.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions


    Original     		PDF GWM100-0085X1 IF110 ID110 A0-0085X1 100-085X1-SL 100-085X1-SMD 100-0085X1 100-0085X1 Diode smd s6 68 S4 42 DIODE smd diode g6 DIODE S4 39 smd diode DIODE marking S6 77 smd diode g6 smd diode S6 Diode smd s6 68 g1 S3 marking DIODE smd diode code 03a smd diode marking 77

    SMD MARKING code L1

    Abstract: smd diode g6 DIODE S4 39 smd diode smd diode marking code L2 smd diode S6 DIODE smd marking l3 smd diode s4 smd diode code mj smd diode g5 SMD MARKING g5 SMD mosfet MARKING code TJ
    Text: GWM 180-004X2 Three phase full Bridge VDSS = 40 V = 180 A ID25 RDSon typ. = 1.9 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions


    Original     		PDF 180-004X2 IF110 ID110 1004X2 180-004X2-SL 180-004X2-SMD 180-004X2 SMD MARKING code L1 smd diode g6 DIODE S4 39 smd diode smd diode marking code L2 smd diode S6 DIODE smd marking l3 smd diode s4 smd diode code mj smd diode g5 SMD MARKING g5 SMD mosfet MARKING code TJ

    smd diode code mj

    Abstract: smd diode code SL
    Text: GWM 160-0055P3 Three phase full Bridge VDSS = 55 V ID25 = 160 A RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TJ = 25°C to 150°C Maximum Ratings VGS


    Original     		PDF 160-0055P3 smd diode code mj smd diode code SL

    smd diode S6

    Abstract: smd diode S4 S4 DIODE SMD MARKING g5 smd diode g5 smd diode g6 Diode S4 g1 smd diode S3 marking DIODE SMD MARKING s6
    Text: GWM 220-004P3 Three phase full Bridge VDSS = 40 V =1 80 A ID25 RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings


    Original     		PDF 220-004P3 220-003P3-SMD 220-004P3 20081126f smd diode S6 smd diode S4 S4 DIODE SMD MARKING g5 smd diode g5 smd diode g6 Diode S4 g1 smd diode S3 marking DIODE SMD MARKING s6

    SMD MARKING QG 6 PIN

    Abstract: smd diode code g4 SMD DIODE DEVICE sl smd diode marking 77 smd marking SL SMD diode NC All smd diode marking smd diode l2 smd diode S6 smd diode MARKING 03A
    Text: GWM100-0085X1 Three phase full Bridge VDSS = 85 V = 103 A ID25 RDSon typ. = 5.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions


    Original     		PDF GWM100-0085X1 IF110 ID110 100-085X1-SMD 100-0085X1 100-0085X1 SMD MARKING QG 6 PIN smd diode code g4 SMD DIODE DEVICE sl smd diode marking 77 smd marking SL SMD diode NC All smd diode marking smd diode l2 smd diode S6 smd diode MARKING 03A

    smd diode S4

    Abstract: No abstract text available
    Text: GWM 220-004P3 Three phase full Bridge VDSS = 40 V ID25 = 190 A RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings


    Original     		PDF 220-004P3 100-01X1-SMD 220-004P3 20070906c smd diode S4

    smd diode g6

    Abstract: smd S4 36 SMD diode MARKING CODE g6 smd g5
    Text: GWM 220-004P3 Three phase full Bridge VDSS = 40 V ID25 = 190 A RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings


    Original     		PDF 220-004P3 220-003P3-SMD 220-004P3 20080527e smd diode g6 smd S4 36 SMD diode MARKING CODE g6 smd g5

    S4 42 DIODE

    Abstract: smd diode g6 DIODE S4 39 smd diode smd diode S4 28 DIODE S4 37
    Text: GWM100-0085X1 VDSS = 85 V = 103 A ID25 RDSon typ. = 5.5 mΩ Three phase full Bridge with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions


    Original     		PDF GWM100-0085X1 IF110 ID110 100-0085X1-SMD 100-0085X1 100-0085X1 S4 42 DIODE smd diode g6 DIODE S4 39 smd diode smd diode S4 28 DIODE S4 37

    smd diode code SL

    Abstract: smd diode g6 DIODE S4 39 smd diode smd diode code g3 SMD mosfet MARKING code TC S4 SMD Marking Code SMD MARKING CODE s4 smd diode code g4 smd diode code s3 smd diode marking s4 smd diode S6
    Text: GWM 160-0055P3 Three phase full Bridge VDSS = 55 V = 160 A ID25 RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 L- Conditions VDSS TJ = 25°C to 150°C Maximum Ratings IF25 IF90 TC = 25°C diode


    Original     		PDF 160-0055P3 smd diode code SL smd diode g6 DIODE S4 39 smd diode smd diode code g3 SMD mosfet MARKING code TC S4 SMD Marking Code SMD MARKING CODE s4 smd diode code g4 smd diode code s3 smd diode marking s4 smd diode S6

    smd diode code SL

    Abstract: smd diode code g3 smd diode .S6 22 smd diode S2 Marking Code KEY smd diode g5 SMD mosfet MARKING code TJ smd code marking SL S6 39 diode DIODE S4 39
    Text: GWM 160-0055X1 Three phase full Bridge VDSS = 55 V ID25 = 160 A RDSon typ. = 2.7 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TJ = 25°C to 150°C Maximum Ratings VGS


    Original     		PDF 160-0055X1 20070809c smd diode code SL smd diode code g3 smd diode .S6 22 smd diode S2 Marking Code KEY smd diode g5 SMD mosfet MARKING code TJ smd code marking SL S6 39 diode DIODE S4 39

    Untitled

    Abstract: No abstract text available
    Text: GWM 160-0055P3 VDSS = 55 V = 160 A ID25 RDSon typ. = 2.0 mW Three phase full Bridge with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 L- Conditions VDSS TJ = 25°C to 150°C Maximum Ratings IF25 IF90 TC = 25°C diode


    Original     		PDF 160-0055P3

    smd diode code mj

    Abstract: SMD marking code 542 smd diode code g6 9 GWM 100-01X1 smd diode code g4 smd marking BL smd diode code s6 welding mosfet smd diode g6 DIODE S4 39 smd diode TR 505 diode
    Text: Advanced Technical Information Three phase full Bridge GWM 100-01X1 VDSS = 100 V ID25 = 90 A RDSon typ. = 7.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TJ = 25°C to 150°C


    Original     		PDF 100-01X1 160-0055P3 20070706a smd diode code mj SMD marking code 542 smd diode code g6 9 GWM 100-01X1 smd diode code g4 smd marking BL smd diode code s6 welding mosfet smd diode g6 DIODE S4 39 smd diode TR 505 diode

    smd diode code SL

    Abstract: smd diode code mj
    Text: GWM 120-0075P3 Three phase full Bridge VDSS = 75 V ID25 = 125 A RDSon typ. = 3.7 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 75 V ± 20


    Original     		PDF 120-0075P3 20070628b smd diode code SL smd diode code mj

    smd diode S6

    Abstract: smd diode code s6 S6 diode s6 smd code smd diode code ja smd diode code A 064d S1ZA20 smd diode code m 013g
    Text: 面実装デバイス アレイ型 Twin Diode Surface Mounting Device Diode Array •外観図 OUTLINE S1ZA□ Unit : mm Weight : 0.13g （typ.） Package：1Z 600V 1.1A ④ 特長 品名略号 Type No. • SMD • ツイン • 耐湿性に優れ高信頼性


    Original     		PDF S1ZA20 S1ZA60 smd diode S6 smd diode code s6 S6 diode s6 smd code smd diode code ja smd diode code A 064d S1ZA20 smd diode code m 013g

    S1NAD80

    Abstract: 014N smd diode code ja 029g
    Text: 面実装デバイス アレイ型 Twin Diode Surface Mounting Device Diode Array •外観図 OUTLINE S1NAD80 Unit : mm Weight : 0.29g （typ.） Package：1NA 800V 3A 6.8 ④ 特長 極性記号 Terminal direction • SMD • ツイン • 耐湿性に優れ高信頼性


    Original     		PDF S1NAD80 1mst10msTj 101mm2 1101mm2 S1NAD80 014N smd diode code ja 029g

    smd diode marking ja

    Abstract: DIODE SMD CODE MARKING 35 SMD MARKING CODE 102 SMD MARKING CODE 014n SMD diode MARKING CODE 10 014N smd diode code ja ad 68 smd code DIODE smd marking smd diode marking code
    Text: 面実装デバイス アレイ型 Twin Diode Surface Mounting Device Diode Array •外観図 OUTLINE S1NAD80 Unit : mm Weight : 0.29g （typ.） Package：1NA 800V 3A 6.8 特長 極性記号 Terminal direction • SMD • ツイン • 耐湿性に優れ高信頼性


    Original     		PDF S1NAD80 1101mm J534-1 smd diode marking ja DIODE SMD CODE MARKING 35 SMD MARKING CODE 102 SMD MARKING CODE 014n SMD diode MARKING CODE 10 014N smd diode code ja ad 68 smd code DIODE smd marking smd diode marking code

    DIODE marking S6 57

    Abstract: DIODE marking S4 57 smd diode code s1 96 GMM3x60-015X1 DIODE marking S6 96 smd diode .S6 22 smd diode S4 96 smd diode g6 Control of Starter-generator S4 DIODE
    Text: GMM3x60-015X1 Three phase full Bridge VDSS = 150 V = 57 A ID25 RDSon typ. = 17 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings


    Original     		PDF GMM3x60-015X1 IF110 ID110 3x60-015X1 3x60-015X1 DIODE marking S6 57 DIODE marking S4 57 smd diode code s1 96 GMM3x60-015X1 DIODE marking S6 96 smd diode .S6 22 smd diode S4 96 smd diode g6 Control of Starter-generator S4 DIODE

    SMD mosfet MARKING code TC

    Abstract: smd diode g6 SMD MARKING CODE s4 IF110 diode L2 smd smd diode code g3 smd diode code g6 smd diode marking code L2 Control of Starter-generator DIODE marking S6 57
    Text: GMM3x60-015X2 Three phase full Bridge VDSS = 150 V = 57 A ID25 RDSon typ. = 17 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings


    Original     		PDF GMM3x60-015X2 IF110 ID110 3x60-015X2 3x60-015X2 SMD mosfet MARKING code TC smd diode g6 SMD MARKING CODE s4 IF110 diode L2 smd smd diode code g3 smd diode code g6 smd diode marking code L2 Control of Starter-generator DIODE marking S6 57