DIODE smd marking A4
Abstract: smd diode A4 smd transistor a4 A CLIPPER CIRCUIT APPLICATIONS 1SS303 marking a4 a4 marking A4 marking diode a4 smd transistor smd A4
Text: Diodes SMD Type HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODE 1SS303 Features Low capacitance: Ct = 2.5 pF TYP. High speed switching: trr = 4.0 ns MAX. Wide applications including switching, limitter, clipper. Double diode configuration assures economical use.
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1SS303
DIODE smd marking A4
smd diode A4
smd transistor a4
A CLIPPER CIRCUIT APPLICATIONS
1SS303
marking a4
a4 marking
A4 marking diode
a4 smd transistor
smd A4
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smd diode a6
Abstract: smd diode marking a6 DIODE A6 marking A6 A CLIPPER CIRCUIT APPLICATIONS 1SS304 smd transistor A6 A6 DIODE SMD a6 Transistor
Text: Diodes SMD Type HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODE 1SS304 Features Low capacitance: Ct = 1.1 pF TYP. High speed switching: trr = 3.0 ns MAX. Wide applications including switching, limitter, clipper. Double diode configuration assures economical use.
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1SS304
smd diode a6
smd diode marking a6
DIODE A6
marking A6
A CLIPPER CIRCUIT APPLICATIONS
1SS304
smd transistor A6
A6 DIODE
SMD a6 Transistor
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Diode smd code cm
Abstract: cfd 10 DTS1005 DSA0041763 Diode smd code ee PerkinElmer light
Text: D A T A S H E E T CERLED Ceramic Chip SMD SMD – Receiver CFD 10 Photo Pin Diode Description Real surface mount component with a ceramic chip base. The silicon Photo PIN Diode provides the positive side on the front and the negative side on the ceramic contact base.
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DTS1005
Diode smd code cm
cfd 10
DTS1005
DSA0041763
Diode smd code ee
PerkinElmer light
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smd Marking OU
Abstract: B05S-G B05S smd marking NE B10S B10SG
Text: COMCHIP SMD General Purpose Bridge Rectifier Diode SMD Diodes Specialist B05S-G Thru B10S-G Reverse Voltage: 50 to 1000 Volts Forward Current: 0.8 A RoHS Device Features TO269AA MiniDIP -Rating to 1000V PRV. -Ideal for printed circuit board. 0.193 (4.90)
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B05S-G
B10S-G
O269AA
125grams.
QW-BBR01
smd Marking OU
B05S
smd marking NE
B10S
B10SG
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Untitled
Abstract: No abstract text available
Text: TSML3710 VISHAY Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSML3710 is an infrared emitting diode in GaAlAs on GaAs technology in miniature PLCC-2 SMD package. Features • SMT IRED with extra high radiant power
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TSML3710
TSML3710
TEMT3700
2002/95/EC
2002/96/Eded
08-Apr-05
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VSMF4710
Abstract: CECC00802 J-STD-020B VSMF4710-GS08 VSMF4710-GS18
Text: VSMF4710 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm RoHS Compliant, Released for Lead Pb -free Solder Process Description VSMF4710 is a high speed infrared emitting diode in GaAlAs double hetero (DH) technology in a miniature PLCC-2 SMD package.
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VSMF4710
VSMF4710
08-Apr-05
CECC00802
J-STD-020B
VSMF4710-GS08
VSMF4710-GS18
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CECC00802
Abstract: J-STD-020B VSMG3700 VSMG3700-GS08 VSMG3700-GS18
Text: VSMG3700 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm RoHS Compliant, Released for Lead Pb -free Solder Process Description VSMG3700 is a high speed infrared emitting diode in GaAlAs double hetero (DH) technology in a miniature PLCC-2 SMD package.
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VSMG3700
VSMG3700
08-Apr-05
CECC00802
J-STD-020B
VSMG3700-GS08
VSMG3700-GS18
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J-STD-020B
Abstract: No abstract text available
Text: VSMG2700 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm RoHS Compliant, Released for Lead Pb -free Solder Process Description VSMG2700 is a high speed infrared emitting diode in GaAlAs double hetero (DH) technology in a miniature PLCC-2 SMD package.
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VSMG2700
VSMG2700
08-Apr-05
J-STD-020B
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TSMG2700
Abstract: No abstract text available
Text: TSMG2700 Vishay Semiconductors GaAlAs DH Infrared Emitting Diode in SMT Package Description TSMG2700 is a high speed infrared emitting diode in GaAlAs double hetero DH technology in a miniature PLCC-2 SMD package. DH technology combines high speed with high radiant
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TSMG2700
TSMG2700
D-74025
28-Nov-06
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Untitled
Abstract: No abstract text available
Text: TSMG2700 Vishay Semiconductors GaAlAs DH Infrared Emitting Diode in SMT Package Description TSMG2700 is a high speed infrared emitting diode in GaAlAs double hetero DH technology in a miniature PLCC-2 SMD package. DH technology combines high speed with high radiant
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TSMG2700
TSMG2700
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: TSMG2700 Vishay Semiconductors GaAlAs DH Infrared Emitting Diode in SMT Package Description TSMG2700 is a high speed infrared emitting diode in GaAlAs double hetero DH technology in a miniature PLCC-2 SMD package. DH technology combines high speed with high radiant
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TSMG2700
TSMG2700
08-Apr-05
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VSMF3710
Abstract: CECC00802 J-STD-020B VSMF3710-GS08 VSMF3710-GS18
Text: VSMF3710 Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm RoHS Compliant, Released for Lead Pb -free Solder Process Description VSMF3710 is a high speed infrared emitting diode in GaAlAs double hetero (DH) technology in a miniature PLCC-2 SMD package.
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VSMF3710
VSMF3710
08-Apr-05
CECC00802
J-STD-020B
VSMF3710-GS08
VSMF3710-GS18
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Untitled
Abstract: No abstract text available
Text: TSMG2700 Vishay Semiconductors GaAlAs DH Infrared Emitting Diode in SMT Package Description TSMG2700 is a high speed infrared emitting diode in GaAlAs double hetero DH technology in a miniature PLCC-2 SMD package. DH technology combines high speed with high radiant
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TSMG2700
TSMG2700
D-74025
30-Sep-04
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Untitled
Abstract: No abstract text available
Text: TSMG2700 Vishay Semiconductors GaAlAs DH Infrared Emitting Diode in SMT Package Description TSMG2700 is a high speed infrared emitting diode in GaAlAs double hetero DH technology in a miniature PLCC-2 SMD package. DH technology combines high speed with high radiant
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TSMG2700
TSMG2700
D-74025
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: P h ilips Sem iconductors Product specification High-speed diode BAS55 FEATURES DESCRIPTION • Small plastic SMD package The BAS55 is a high-speed switching diode fabricated in planar technology, and encapsulated in the small rectangular plastic SMD SOT23
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BAS55
BAS55
wit25
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smd diode marking FG
Abstract: f15jc10
Text: Schottky Barrier Diode Twin Diode M fm OUTLINE Package : STO-220 D F15J C 10 Unit-m m W e ig h t 1.5g Typ 10.2 100 V 15A Feature • SMD • -fg| = 0 . 6mA • SMD • SiyRTÈÎEiËcI l_y(<_<LU'' • Resistance for thermal run-away • High lo Rating-Small-RKG
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STO-220
smd diode marking FG
f15jc10
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DIODE marking VU
Abstract: DF15JC10 STO-220 Shindengen smd diode VU SHINDENGEN DIODE
Text: Schottky Barrier Diode Twin Diode m n m o u tlin e DF15J C 10 100 V 15A Feature • SMD • • • • • I r = 0 . 6 it i A • jw is æ ç ë c u ic < L ' • /Jvä!*«3iig * SMD Low lR=0.6mA Resistance for thermal run-away High lo Rating -Small-PKG
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DF15JC10
STO-220
DIODE marking VU
DF15JC10
STO-220 Shindengen
smd diode VU
SHINDENGEN DIODE
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j532
Abstract: C3B56 DF10LC30 STO-220
Text: Super Fast Recovery Diode Twin Diode mtmm DF10LC30 o u t lin e 300V 10A Feature • SMD • e y -rx • SMD • Low Noise • trr-30ns • trr-30ns Main Use • DC/DC D y / K - Ï • S a .O A .B B W • fflte.FA • PDP • Switching Regulator • DC/DC Converter
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DF10LC30
trr-30ns
STO-220
J532-1}
C3B56
J532-1)
j532
DF10LC30
STO-220
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Untitled
Abstract: No abstract text available
Text: Super Fast Recovery Diode Single Diode mtmm o u t lin e Package ! E-pack DE5L60 U n ii Im m 600V 5A Feature • SMD • High Voltage • trr=50ns SMD ia U E E trr=50ns • • • • • PFC - \s wm.OA FA I 51l 6 Dill*rtidi M a in U se PFC(Power Factor Correction)
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DE5L60
J532-1
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode mwm o u t lin e Package : STO-220 DF40SC3L U n ii I m m W e ig h t 30V 40A Date code ^ N Feature N . 0176 Control No. • SMD • SMD • SV f=0.45V • Low Vf=0.45V • P rrsm7’K 5 > ì ' i ® ì ì ì • PnnsM Rating
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STO-220
DF40SC3L
40SC3L
10000iâ
J532-1
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smd diode marking LM
Abstract: smd diode "marking 77" SMD diode TSA smd diode HB RW marking Diode marking TY
Text: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : E-pack DE10SC3L Unit^mm W eight 0.326g Typ 30 V 10A Feature <SMD • SMD • Tj=150°C •<SV f=0.45V 1Tj=150°C 1 Low Vf=0.45V 1 P rrsm Rating 1 High lo Rating -Small-PKG • P r r s m 7 7A ' 5 > ^ i S IÎE
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DE10SC3L
smd diode marking LM
smd diode "marking 77"
SMD diode TSA
smd diode HB
RW marking
Diode marking TY
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smd diode marking U1
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : E-pack DE10PC3 Unit-mm Weight 0.326g Typ 30 V 10A Feature • SMD • SMD • î 2 ® V f =0.4 V • U ltra -L o w V f=0.4V • iJ 'S = À l; jS î § M • High lo R a tin g -S m a ll-P K G Main Use
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DE10PC3
--25C
smd diode marking U1
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smd diode 2d
Abstract: diode smd 2d DF40SC4 MX 15G smd m7
Text: Schottky Barrier Diode Twin Diode mtmm DF40SC4 o u t lin e 40V 40A Feature • SMD • SMD • PRRSMÿ7/ ' C 5 > î / x < S l I • P brsm Rating 1 High lo Rating-Small-PKG Main Use • Switching Regulator • DC/DC □ V K —5' • DC/DC Converter • mm. y -A .o A m s s
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DF40SC4
STO-220
J532-1)
smd diode 2d
diode smd 2d
DF40SC4
MX 15G
smd m7
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification High-speed diode BAL99 FEATURES DESCRIPTION • Small plastic SMD package The BAL99 is a high-speed switching • High switching speed: max. 4 ns diode fabricated in planar technology, and encapsulated in the small SOT23
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BAL99
BAL99
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