13003 charger
Abstract: 230v to 5v circuit using 13003 transistor 121k 1kv capacitor
Text: Innovative Green Power Solutions AC/DC Charger/Adapter Reference Designs For DOE Level 6 Standard Rev 1.4 Jun 2013 -1- www.active-semi.com High Performance AC/DC Switching Power Solutions Application Change Note Revision History Page 9,10 Page 11,12 2013 - Jun - 26
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ACT334
ACT512
ACT410
ACT411
ACT410/411
ACT413
F/400V
SC053
1000pF/400V
13003 charger
230v to 5v circuit using 13003 transistor
121k 1kv capacitor
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DIODE SMD J9
Abstract: No abstract text available
Text: IRAUDAMP12 130W/4Ω x 2 Channel Class D Audio Power Amplifier Using the IR4301 By Jun Honda, Liwei Zheng CAUTION: International Rectifier suggests the following guidelines for safe operation and handling of IRAUDAMP12 Demo board; • Always wear safety glasses whenever operating Demo Board
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IRAUDAMP12
30W/4â
IR4301
IRAUDAMP12
Fig21â
DIODE SMD J9
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72J5420
Abstract: No abstract text available
Text: IRAUDAMP16 70W/4Ω x 2 Channel Class D Audio Power Amplifier Using the IR4302 By Jun Honda, Liwei Zheng CAUTION: International Rectifier suggests the following guidelines for safe operation and handling of IRAUDAMP16 Demo board; • Always wear safety glasses whenever operating Demo Board
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IRAUDAMP16
IR4302
IRAUDAMP16
Figure25
Figure26
AN1170
Figure27
72J5420
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Untitled
Abstract: No abstract text available
Text: STEVAL-IFP010V2 Demonstration board for the VNI2140J dual high-side, solid-state smart power relay Data Brief Features • Output current: 1 A per channel ■ Shorted load protection ■ Junction overtemperature protection ■ Case overtemperature protection for thermal
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STEVAL-IFP010V2
VNI2140J
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1206 smd CAPACITOR
Abstract: No abstract text available
Text: STEVAL-IFP010V1 Demonstration board for the VNI2140J dual high-side, solid-state smart power relay Data Brief Features • Output current: 1 A per channel ■ Shorted load protection ■ Junction over-temperature protection ■ Case over-temperature protection for thermal
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STEVAL-IFP010V1
VNI2140J
1206 smd CAPACITOR
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EE16 12V
Abstract: SMD TRANSISTOR B7 EE16 transformer 5v 2.1a t1/epc17 TRANSFORMER smd transistor 12W 3 pins EE16-4 core transformer
Text: Innovative Green Power Solutions AC/DC Charger/Adapter Reference Designs ACT41X Rev 1.4 JUL 2013 -1- www.active-semi.com High Performance AC/DC Switching Power Solutions Application Change Note Revision History 2013 - Jul - 22 Rev 1.4 Page 4.5 Update ACT410 5V2.1A application solution transformer and parameter.
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ACT41X
ACT410
ACT413
EPC17)
ACT411
12V1A
ACT412
-11For
EE16 12V
SMD TRANSISTOR B7
EE16 transformer 5v 2.1a
t1/epc17 TRANSFORMER
smd transistor 12W 3 pins
EE16-4 core transformer
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LED lighting
Abstract: transistor D13003 X D13003X 12v transformer winding formula 12V 1A Transformer specification 23/10V 3W LED DRIVER
Text: Innovative PowerTM ACT364 DESIGN GUIDE Jun 2014 Innovative LED Solutions AC/DC LED Lighting PRODUCT SELECTION GUIDE LED Lighting Reference Rev3.1 Apr 2011 Designs June 2014 Copyright 2014 Active-Semi International, Inc. - - www.active-semi.com www.active-semi.com
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ACT364
350mA
700mA
ACT364e
01uF/50V
100pF/25V
LED lighting
transistor D13003 X
D13003X
12v transformer winding formula
12V 1A Transformer specification
23/10V 3W LED DRIVER
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SSL2109AT
Abstract: No abstract text available
Text: UM10588 SSL2109AT 18 W buck high-power factor T8 demo board Rev. 1 — 21 January 2013 User manual Document information Info Content Keywords SSL2109, buck, controller, demo board, LED driver, LED retrofit lamp, high-power factor, non-dimmable, non-isolated, SSL2109ADB1096,
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UM10588
SSL2109AT
SSL2109,
SSL2109ADB1096,
SSL2109ADB1097
UM10588information.
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EE16-4 core transformer
Abstract: EE16 transformer 5v 2.1a
Text: Innovative Green Power Solutions AC/DC Charger/Adapter Reference Designs ACT41X Rev 1.5 Jan 2014 -1- www.active-semi.com High Performance AC/DC Switching Power Solutions Application Change Note Revision History 2014 - Jan - 23 Rev 1.5 Page 4.5 Update ACT410 5V2.1A application solution transformer and parameter.
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Original
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ACT41X
ACT410
ACT413
EPC17)
ACT411
12V1A
ACT412
-11For
EE16-4 core transformer
EE16 transformer 5v 2.1a
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Single Diode m tm D3FS4A O UTLINE Unit-mm Weight 0.16g Typ Package : 2F iJV - F v - ^ thode m ark 40V 2.6A Feature • /J v P S M D • Small SMD • Tj=150°C • < S V f = 0 .4 5 V • Tj=150°C • Low V f = 0 . 4 5 V :ffiïiE
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OCR Scan
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smd diode marking zf
Abstract: DF10SC4M smd diode marking c MTKM Diode 1_b SMD
Text: Schottky Barrier Diode Twin Diode w nnm o u tlin e DF10SC4M 4 0 V 10 A Feature • SM D • SMD • P rrsm T K ^ V S / i & S I • Prrsm Rating 1High lo Rating-Small-PKG » 'J i3 ü * S S 3 S g l Main Use • D C /D C n y i K — S> • mm. y-A.oA&gg • •
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DF10SC4M
11-PKG
STO-220
J532-1)
smd diode marking zf
DF10SC4M
smd diode marking c
MTKM
Diode 1_b SMD
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smd marking code fj
Abstract: smd marking 5R marking code H1 SMD SMD MARKING CODE vk smd diode code H1 marking code fj SMD diode raa marking code SMD DIODE BOOK smd diode code marking RA smd code marking LP
Text: Schottky Barrier Diode Single Diode mtm OUTLINE Package : E-pack DE10P3 U nit: mm r Weight 0.326g Typ 30 V 10 A i 2 4 Feature 6.6 • SMD • SMD • Î S ® V f=0.4V • Ultra-Low V f=0.4V • Reverse connect protection for DC power source • DC O R-output
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DE10P3
32fig
50HzX'
smd marking code fj
smd marking 5R
marking code H1 SMD
SMD MARKING CODE vk
smd diode code H1
marking code fj SMD
diode raa marking code
SMD DIODE BOOK
smd diode code marking RA
smd code marking LP
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x25-m
Abstract: MARKING H140 diode b tu 25 c JB SMD MARKING
Text: Schottky Barrier Diode Single Diode mtm OUTLINE Package : E-pack DE3S4M U nit-m m W eight 0.326g Typ 40V 3A ® (g)(4) • SMD Feature • SMD • Tj=150lC • Tj=150°C • P r r s m T V ^ V ï ^ iS Ü Œ • P rrsm Rating High lo Rating-Small-RKG MainUse
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150lC
x25-m
MARKING H140
diode b tu 25 c
JB SMD MARKING
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Untitled
Abstract: No abstract text available
Text: /j'SäüSHn Power zener Diode r / u z mw Small Surface Mount Device Single Zener Diode • ftM U ! OUTLINE Package : 1 F S T 0 4 -1 6 F 1 uniumm Weight 0.058 g 16V 400W ftft ■ ■ /J\SSIVD Feature ■ 1W Class ■ Small SMD ■ Available for automotive use
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ST04-16F1
waveii50HzTiiJ
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Single Diode D3FP3 U nit I mm Package : 2F Weight 0.16tf Typ ay— K v -y 30V 3A ' Cathode mark Feature • î • £«» • Small SMD • Ultra-Low Vf=0.4V S V f = 0 .4 V Main Use • n y x u - im s it • D C t U ^ lO R f f l
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Untitled
Abstract: No abstract text available
Text: MINI-MELF-SMD o Applications Silicon Diode L L 4 1 5 0 1 N r 5 0 U 4 1 R Switching - 1 I D Used in general purpose applications, where a low current controlled forward characteristic and fast switching speed are important. BKC can produce generic equivalents to JAN/ TXZTXV and S level per
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MIL-S-19500/437
LL-34/35
DO-213AA)
DO-35
Mil-S-19
4031-B
1N4150UR-1
DO-213AA
1N4150)
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PDF
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode wnnm o u t l i n e Single Diode D3FS4A Weight 0.16g Typ 4 0 V 2 .6 A / Cathode mark Feature • /J ^ S M D Unit-mm Package I 2F • V f =0.45V • Small SMD • Low V f=0.45V • P rrsm • P r rs m R ating (B — M — @ • fü r
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J53Z-1)
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PDF
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DF40PC3
Abstract: J532 SHINDENGEN DIODE
Text: Schottky Barrier Diode Twin Diode mnm DF40PC3 o u t lin e 30V 40A F e a tu re • SMD • î • SM D 3 V f = 0 .4 V • U ltra-Low V f=0.4V • High lo R ating-Sm all-R K G M a in U s e • /w x u -æ s B m t • Reverse connect protection for DC pow er source
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DF40PC3
STO-220
I-111,
J532-1
DF40PC3
J532
SHINDENGEN DIODE
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NA03HSA08
Abstract: NA03HSA065 NA03HSA12 marking AAW HAB8 mta soldering
Text: 3A 80V Tjw150 C ^C 1 /3 /. 3r—.siJJ F S ch o ttk y B a rrier D iode SMD TypB t t 4 3 *^* Nihon Inter Electronics Corporation Specification m ->3 7 ^ ^r—z-N u T V 4 Construction Schottky barrier diode Application High frequency rectification K MAXIMUM RATINGS Ta=25°C : unless otherwise specified
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Tjw150V
NA03HSA08
50HzjE3Â
NA03HSA08
NA03HSA065
NA03HSA12
UL94VH3
Snl00%
NA03HSA065
NA03HSA12
marking AAW
HAB8
mta soldering
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PDF
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Untitled
Abstract: No abstract text available
Text: Super Fast Recovery Diode Single D iode OUTLINE Package : 1F m tm D1FL40 Unit-mm Weight 0.058g Typ i) 400V 0.8A / Ccilhode mark NÉ '4 h Feature • /J v P S M D • Small SMD • ß y - rx • Low Noise • trr=50ns • trr=50ns tt 5 k . ii Type No.
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D1FL40
D1FL40
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10SC4
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode l ^ t l l OUTLINE Package : E-pack DE10SC4 Unit: mm Weight 0.326tf Typ 4 0 V 10 A Feature G6 • SM D • SMD • P rrsm 7 ' K 5 > î / x (SSE • Prrsm Rating Type wo I H igh lo R a tin g -S m a ll-P K G 10SC4 p -/Hü»XM
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DE10SC4
326tf
10SC4
or10ms
J532-1)
10SC4
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PDF
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JJ SMD diode
Abstract: smd diode marking JJ smd diode JJ DIODE marking VU smd marking KM DE10S3L J532 smd diode HB smd diode marking ex TC124T
Text: Schottky Barrier Diode Single Diode mtm OUTLINE Package : E-pack DE10S3L U n it: m m r W eigh t 0.326g T y p 30 V 10 A i 2 4 Feature 6.6 • SMD • Tj'=150t; • Tj= 150°C • ® V f =0.45V • L o w V f = 0.45V • P R R S M p y ^ V Î/X ÎS II • P r r s m R atin g
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DE10S3L
32fig
JJ SMD diode
smd diode marking JJ
smd diode JJ
DIODE marking VU
smd marking KM
DE10S3L
J532
smd diode HB
smd diode marking ex
TC124T
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PDF
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10sc4
Abstract: f 10sc4 diode smd marking S0 smd diode JF smd m7 ssie DE10SC4 smd marking S0
Text: Schottky Barrier Diode Twin Diode m tm m o u t lin e Package I E-pack DE10SC4 U nit I mm Weight 0.326k T yp 4 0 V 10 A Feature 6.6 • SMD • SM D • PRRSMÿ7/ ' C 5 > î / x < S l I • P brsm Rating Type \"u 1 High lo R ating-Sm all-PK G 5 • DC/DC □ V K — '
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DE10SC4
10SC4
J532-1)
10sc4
f 10sc4
diode smd marking S0
smd diode JF
smd m7
ssie
DE10SC4
smd marking S0
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PDF
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D0214AC
Abstract: D0-214AC b20 diode diode d0214-ac diode sod57 telefunken sod57 l203
Text: VISHAY Vishay Telefunken ▼ Contents of a Diode in 1W SMD Package D0214AC Mold 50.4% 7 1 ,4 % S i0 2 26.0% epoxy resin 1.6% Sb (as antim ony trioxide) '" > 1.0% B r(n o T B A )* ) Traces of N, Fe, C, Cl Lead fram e, tinned (46.2%) 84.8% copper 9.3% iron
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D0214AC
D0214AC
D0-214AC
b20 diode
diode d0214-ac
diode sod57
telefunken sod57
l203
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