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    SMD MARKING S21 Search Results

    SMD MARKING S21 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLM15PX121BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 120ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX181SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 180ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM21HE802SN1L Murata Manufacturing Co Ltd FB SMD 0805inch 8000ohm NONAUTO Visit Murata Manufacturing Co Ltd
    BLM15PX330BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 33ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX600SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 60ohm POWRTRN Visit Murata Manufacturing Co Ltd

    SMD MARKING S21 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    "marking E1"

    Abstract: BFS17 BFS17R sot 23 transistor 70.2
    Text: BFS17/BFS17R Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 2 1 3 3 94 9280 BFS17 Marking: E1 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter 2 95 10527 BFS17R Marking: E4


    Original     		PDF BFS17/BFS17R BFS17 BFS17R D-74025 17-Apr-96 "marking E1" sot 23 transistor 70.2

    "marking E1"

    Abstract: BFS17R BFS17 d 1556 transistor
    Text: BFS17/BFS17R Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280 2 9510527 3 3 BFS17 Marking: E1


    Original     		PDF BFS17/BFS17R BFS17 BFS17R D-74025 16-Oct-97 "marking E1" d 1556 transistor

    BFS17

    Abstract: transistor BFs 18 BFS17R marking E1
    Text: BFS 17 / BFS 17 R TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 2 1 3 3 94 9280 BFS17 Marking: E1 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter


    Original     		PDF BFS17 BFS17R D-74025 transistor BFs 18 marking E1

    smd marking nf

    Abstract: S21E S21E-2 2SC3429 nf smd marking
    Text: Transistors IC SMD Type Silicon NPN Epitaxial Planar Type 2SC3429 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low Noise Figure 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 NF=1.5dB,|S21e|2=16dB f=500MHz +0.05 0.1-0.01 0-0.1 +0.1


    Original     		PDF 2SC3429 OT-23 500MHz) 500MHz smd marking nf S21E S21E-2 2SC3429 nf smd marking

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SC3429 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low Noise Figure 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 NF=1.5dB,|S21e|2=16dB f=500MHz +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1


    Original     		PDF 2SC3429 OT-23 500MHz) 500MHz

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SC3099 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Low Noise Figure 1 NF=1.7dB,|S21e|2=15dB f=500MHz 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1


    Original     		PDF 2SC3099 OT-23 500MHz) 500MHz

    S21E

    Abstract: S21E-2 2SC3099 nf smd marking
    Text: Transistors IC SMD Type Silicon NPN Epitaxial 2SC3099 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 NF=1.7dB,|S21e|2=15dB f=500MHz 0.55 Low Noise Figure +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1


    Original     		PDF 2SC3099 OT-23 500MHz) 500MHz S21E S21E-2 2SC3099 nf smd marking

    marking MA

    Abstract: 2SC3011
    Text: Transistors IC SMD Type Silicon NPN Epitaxial 2SC3011 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Low Noise Figure: NF=2.3dB Typ. f=1GHz 1 High fT : fT=6.5GHz 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 High Gain :|S21e|2=12dB(TYP.) 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1


    Original     		PDF 2SC3011 OT-23 marking MA 2SC3011

    marking mh

    Abstract: 2SC3606
    Text: Transistors IC SMD Type Silicon NPN Epitaxial Planar Type 2SC3606 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 NF = 1.1dB, |S21e|2 = 11dB f = 1 GHz 1 0.55 Low noise figure, high gain. +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1


    Original     		PDF 2SC3606 OT-23 marking mh 2SC3606

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SC3606 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 NF = 1.1dB, |S21e|2 = 11dB f = 1 GHz 1 0.55 Low noise figure, high gain. +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1


    Original     		PDF 2SC3606 OT-23

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SC3098 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 NF=2.5dB,|S21e|2=14.5dB f=500MHz 0.55 Low Noise Figure +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 1.Base 2.Emitter


    Original     		PDF 2SC3098 OT-23 500MHz) 500MHz

    sot-23 Marking Mb

    Abstract: 2SC3098 S21E-2 Marking MB
    Text: Transistors IC SMD Type Silicon NPN Epitaxial 2SC3098 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 NF=2.5dB,|S21e|2=14.5dB f=500MHz 0.55 Low Noise Figure +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 1.Base 2.Emitter


    Original     		PDF 2SC3098 OT-23 500MHz) 500MHz sot-23 Marking Mb 2SC3098 S21E-2 Marking MB

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SC3011 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Low Noise Figure: NF=2.3dB Typ. f=1GHz 1 High fT : fT=6.5GHz 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 High Gain :|S21e|2=12dB(TYP.) 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1


    Original     		PDF 2SC3011 OT-23

    Untitled

    Abstract: No abstract text available
    Text: Transistors Diodes IC SMD Type Product specification 2SA1978 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 High fT fT=5.5GHz TYP . 0.4 3 Features 1 0.55 High gain |S21e|2=10.0dB TYP.@f=1.0GHz,Vce=-10V,Ic=-15mA 2 High-speed switching characterstics


    Original     		PDF 2SA1978 OT-23 -15mA -15mA,

    PT-200

    Abstract: 2SA1977 Marking T92 SOT marking t92 TRANSISTOR SMD 1301
    Text: Transistors IC SMD Type PNP Epitaxial Silicon Transistor 2SA1977 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 High gain 0.55 High fT :fT = 8.5 GHz TYP. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 | S21e |2 = 12.0 dB TYP. @f = 1.0 GHz, VCE = -8 V, IC = -20 mA


    Original     		PDF 2SA1977 OT-23 PT-200 2SA1977 Marking T92 SOT marking t92 TRANSISTOR SMD 1301

    smd transistor w1a

    Abstract: smd transistor w1a 25 W1A smd transistor smd transistor gz smd transistor marking A14 SMD W1A transistor AVX tantalum marking MARKING w1a SOT-23 smd transistor w1a 50 marking code NJ SMD Transistor
    Text: AntennaGuard 0402/0603 AVX Multilayer Ceramic Transient Voltage Suppressors ESD Protection for Antennas and Low Capacitor Loading Applications GENERAL DESCRIPTION RF antenna/RF amplifier protection against ESD events is a growing concern of RF circuit designers today, given the


    Original     		PDF CX-49G, CX-40F HC-49/U HC-49U-S 31-Dec-04 CX-49L smd transistor w1a smd transistor w1a 25 W1A smd transistor smd transistor gz smd transistor marking A14 SMD W1A transistor AVX tantalum marking MARKING w1a SOT-23 smd transistor w1a 50 marking code NJ SMD Transistor

    DIODE SMD T25

    Abstract: 25V DIODE SMD T25 ComChip Date code br smd marking code MARKING 1E9 Transition minimized differential signaling Diode smd marking 44 055PF DIODE 6kv
    Text: SMD ESD Protection Diode SMD Diodes Specialist CSRS065V0V RoHS Device Features SOT-23-6L ESD Protect for Transition Minimized Differential 0.140 2.90 BSC. Signaling(TMDS) Channels. Protect four I/O lines and one VDD line 0.063(1.60) BSC. 0.110(2.80)BSC. IEC61000-4-2 (ESD) ±8kV(Contact) ,±15kV(Air).


    Original     		PDF CSRS065V0V IEC61000-4-2 IEC61000-4-4 8/20uS) OT-23-6L OT-23-6L MIL-STD-750 100ns QW-BP011 DIODE SMD T25 25V DIODE SMD T25 ComChip Date code br smd marking code MARKING 1E9 Transition minimized differential signaling Diode smd marking 44 055PF DIODE 6kv

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS SMD Super Fast Rectifier SFM21-L THRU SFM28-L List List. 1 Package outline. 2


    Original     		PDF SFM21-L SFM28-L MIL-STD-750D METHOD-1056 METHOD-4066-2 1000hrs. METHOD-1021

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS SMD Super Fast Rectifier SFM21-L THRU SFM28-L List List. 1 Package outline. 2


    Original     		PDF SFM21-L SFM28-L MIL-STD-750D METHOD-1051 METHOD-1056 METHOD-4066-2 METHOD-1021

    SMD diode s26

    Abstract: smd diode marking s26
    Text: Formosa MS SMD Super Fast Rectifier SFM21-BS THRU SFM28-BS List List. 1 Package outline. 2


    Original     		PDF SFM21-BS SFM28-BS MIL-STD-750D METHOD-1051 METHOD-1056 METHOD-4066-2 METHOD-1021 SMD diode s26 smd diode marking s26

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS SMD Super Fast Rectifier SFM21-BS THRU SFM28-BS List List. 1 Package outline. 2


    Original     		PDF SFM21-BS SFM28-BS MIL-STD-750D METHOD-1056 METHOD-4066-2 1000hrs. METHOD-1021

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS SMD Super Fast Rectifier SFM21-B THRU SFM28-B List List. 1 Package outline. 2


    Original     		PDF SFM21-B SFM28-B MIL-STD-750D METHOD-1056 METHOD-4066-2 1000hrs. METHOD-1021

    transistor MAR 819

    Abstract: transistor MAR 543 sl2 357 BFS17
    Text: Tem ic BFS17/BFS17R Sem iconductors Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package BFS17 Marking: El Plastic case SOT 23 1= Collector; 2= Base: 3= Emitter BFS17R Marking: E4


    OCR Scan     		PDF BFS17/BFS17R BFS17 BFS17R 26-Mar-97 transistor MAR 819 transistor MAR 543 sl2 357

    Untitled

    Abstract: No abstract text available
    Text: wmmt BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package 1 BFS17 Marking: E1


    OCR Scan     		PDF BFS17/BFS17R/BFS17W BFS17 BFS17R BFS17W 20-Jan-99