BCP56
Abstract: LM7805 PTF080601E PTF080601F transistor smd marking NE
Text: PTF080601E PTF080601F Thermally-Enhanced High Power RF LDMOS FETs 60 W, 860 – 960 MHz Description PTF080601E Package 30265 The PTF080601E and PTF080601F are 60-watt, internally-matched GOLDMOS FETs intended for EDGE and CDMA applications in the 860 to 960 MHz band. Thermally-enhanced packaging provides the coolest operation possible. Full gold metallization ensures excellent device lifetime
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PTF080601E
PTF080601F
PTF080601E
PTF080601F
60-watt,
PTF080601F*
BCP56
LM7805
transistor smd marking NE
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smd 809 x transistor
Abstract: blt50 MEA218 philips Trimmer 60 pf L6 TRANSISTOR philips 2222 trimmer
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT50 UHF power transistor Product specification April 1991 Philips Semiconductors Product specification UHF power transistor FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability. BLT50 QUICK REFERENCE DATA
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BLT50
OT223
smd 809 x transistor
blt50
MEA218
philips Trimmer 60 pf
L6 TRANSISTOR
philips 2222 trimmer
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BLT50
Abstract: philips Trimmers 2222 series MEA218 MEA223 RF Transistor smd transistor zl
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT50 UHF power transistor Product specification File under Discrete Semiconductors, SC08b April 1991 Philips Semiconductors Product specification UHF power transistor FEATURES • SMD encapsulation • Gold metallization ensures
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BLT50
SC08b
OT223
BLT50
philips Trimmers 2222 series
MEA218
MEA223
RF Transistor
smd transistor zl
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BLT50
Abstract: ptfe trimmer philips 100 pf film dielectric trimmer BLT50,115
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT50 UHF power transistor Product specification April 1991 Philips Semiconductors Product specification UHF power transistor FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability. BLT50 QUICK REFERENCE DATA
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BLT50
OT223
OT223
BLT50
771-BLT50115
ptfe trimmer philips 100 pf
film dielectric trimmer
BLT50,115
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BLT50 UHF power transistor Product specification April 1991 Philips Semiconductors Product specification UHF power transistor FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability. BLT50 QUICK REFERENCE DATA
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BLT50
OT223
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FNR-10K471
Abstract: 14K621 FNR-14K 20K431 10K471 VARISTOR 20k431 FNR-07K471 FNR-10K271 FNR-20K431 FNR-40K471
Text: Multilayer Chip Varistors & Leaded Disc Varistors www.johansondielectrics.com SMD CHIP VARISTORS CHIP VARISTOR FEATURES • • • • • • • SMD type chip varistors are highly reliable in surface mount applications. Wide operating voltage range. Large withstanding surge current and energy at small size
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VIM-332
Abstract: 200B103MW 50X 200B103MW
Text: PTF 102088 LDMOS RF Power Field Effect Transistor 45 Watts, 2110–2170 MHz Key Features The PTF 102088 is a 45–watt internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This device typically operates with 47% efficiency at P–1dB and has a
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1522-PTF
VIM-332
200B103MW 50X
200B103MW
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Untitled
Abstract: No abstract text available
Text: SMD CHIP VARISTORS CHIP VARISTOR FEATURES • • • • • • • SMD type chip varistors are highly reliable in surface mount applications. Wide operating voltage range. Large withstanding surge current and energy at small size Suitable for high speed signal line due to small capacitance
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000A/cm2)
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whirlpool awg 175
Abstract: whirlpool awg 650 display lmg 162 stn easy logic display lmg 162 stn lmg 162 stn BSC2A16DLGY SSC2E16DLYY ZTT-4.00MG BSC2A16DLYY ZTB455E
Text: U.S. Electronics Inc., About Us . Established in 1995, U.S. Electronics is a leading edge manufacturer of high quality passive electronic components and accessories for the OEM markets. With multiple manufacturing locations in the US, France, Korea, Taiwan and China, we can
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30AWG/2
22AWG/1
whirlpool awg 175
whirlpool awg 650
display lmg 162 stn
easy logic display lmg 162 stn
lmg 162 stn
BSC2A16DLGY
SSC2E16DLYY
ZTT-4.00MG
BSC2A16DLYY
ZTB455E
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smd diode UJ 64 A
Abstract: SLD3237VFR 20/SPL1550-10-9-PD SLD3237VF smd diode UM 08 smd diode UM RLCD-M66H-750 RLT905-30G SLD3236VF RLT6650GLI
Text: PRICE LIST 03/2015 Wiedner Hauptstrasse 76, Vienna, Austria EUR USD Tel: +43-1-586 52 430, Fax: +43-1-586 52 43 44 1,00 1,10182 office@roithner-laser.com, www.roithner-laser.com 2015-06-03 last update 2015-06-03 LASER DIODES - UV EUR USD 1-9 pcs. 1-9 pcs.
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RLU4116E,
RLT390-50CMG,
RLT395-50CMG,
RLT400-50CMG,
TH06-1W,
ATU61938489,
AT1212
AT3112
smd diode UJ 64 A
SLD3237VFR
20/SPL1550-10-9-PD
SLD3237VF
smd diode UM 08
smd diode UM
RLCD-M66H-750
RLT905-30G
SLD3236VF
RLT6650GLI
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MB4213
Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
Text: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors
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SSIP-12
KIA6283K
KIA7217AP
SSIP-10
KIA6240K
KIA6801K
KIA6901P/F
MB4213
F10P048
mn1280
mb4213 equivalent
smd transistor zaa
diode zener ZD 15
ic mb4213
transistor 2AX SMD
252 B34 SMD ZENER DIODE
bc237 equivalent SMD
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alternator diode 1776 B
Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)
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Hig86-755-3679515
alternator diode 1776 B
2az marking transistor sot-23
SMD SOT23 transistor MARK Y2
ic mb4213
NEC 12F triac
F10P048
ktc3114 equivalent
SMD TRANSISTOR MARKING 02N
DIODE PJ 57 ss14
BC517 equivalent
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oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
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6 Pin LED PIRANHA
Abstract: everlight 50-215 smd transistor 2T EHP-A09K-BRTT-5670HEAFAD9K-1T8-AM PLR262 19-237A/R6GHBHC-B01/2T IRM-3638M-X
Text: CATALOGUE 2014-2015 OPTOELECTRONIC COMPONENTS www.everlight.com EVERLIGHT THE SOURCE OF LIGHT EVERLIGHT illuminates the way for many of the world’s brightest companies. Acclaimed as a premiere global solution provider in the opto-semiconductor industry and held in high regard as a reliable
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D-85737
SE-573
6 Pin LED PIRANHA
everlight 50-215
smd transistor 2T
EHP-A09K-BRTT-5670HEAFAD9K-1T8-AM
PLR262
19-237A/R6GHBHC-B01/2T
IRM-3638M-X
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schematic diagram PWM 30a
Abstract: RK73H2A1002F schematic diagram PWM 12V 30a MCH215C104KP sot23 Marking f7 smd PD 550 L5 RK73H2A2002F 12v 5v converter TP10 RK73H2A2491F
Text: PD - 94568A iP2002 Synchronous Buck Multiphase Optimized BGA Power Block Integrated Power Semiconductors, Drivers & Passives Features: • • • • • • • Output current 30A continuous with no derating up to TPCB = 90°C and TCASE = 90°C Operating frequency up to 1MHz
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4568A
iP2002
iP2001
iP2002
EIA-481
schematic diagram PWM 30a
RK73H2A1002F
schematic diagram PWM 12V 30a
MCH215C104KP
sot23 Marking f7
smd PD 550 L5
RK73H2A2002F
12v 5v converter
TP10
RK73H2A2491F
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LM7805 smd
Abstract: LM7805 smd 8 pin marking us capacitor pf l1 smd marking f2 TRANSISTOR circuit of lm7805 transistor smd marking ND BCP56 LM7805 PTF080451 PTF080451E
Text: PTF080451 LDMOS RF Power Field Effect Transistor 45 W, 869–960 MHz Description Features The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.
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PTF080451
PTF080451
LM7805 smd
LM7805 smd 8 pin
marking us capacitor pf l1
smd marking f2
TRANSISTOR circuit of lm7805
transistor smd marking ND
BCP56
LM7805
PTF080451E
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BLF188XR NXP
Abstract: blf188
Text: BLF188XR; BLF188XRS Power LDMOS transistor Rev. 5 — 12 November 2013 Product data sheet 1. Product profile 1.1 General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Table 1.
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BLF188XR;
BLF188XRS
BLF188XR
BLF188XR NXP
blf188
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Motorola transistor smd marking codes
Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
Text: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.
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DARLINGTON TRANSISTOR ARRAY
Abstract: No abstract text available
Text: EVERLIGHT. THE SOURCE OF LIGHT. EVERLIGHT illuminates the way for many of the world’s brightest companies. Acclaimed as a premiere global solution provider in the opto-semiconductor industry and held in high regard as a reliable partner for many of the world’s leading electronics companies,
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sot23 jyw
Abstract: JYW SOT23 1FT sot23-6 LM3478 LM5021 USB-S MINI LM3551 LM5000 sfe 16 t34 smd
Text: LED Ü 2Á IK S £.1-5.] 2 0 0 6 ^ 1 1 ^ 714 *]£! l LED . 1-3 :¡I£íb{ zEä .4-5 jjg s j LED H 4 ° l * l ^ r qC>1 o ]S fl ^ 7 > ^ o ] = a^|fcH . 6-7 3*1 ^ l l t f n ? 1 3 } H s . *n:§ - i 4 4 . i m ^ i S . * ¿ 2 . ^ 4 4 « L E D
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OCR Scan
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2006tiia
lm3520
LMS520
107fls]
-P3943
16-LED
LM4970
-71S1-
sot23 jyw
JYW SOT23
1FT sot23-6
LM3478
LM5021
USB-S MINI
LM3551
LM5000
sfe 16
t34 smd
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Untitled
Abstract: No abstract text available
Text: P4C1256 HIGH SPEED 32K x 8 STATIC CMOS RAM * FEATURES • ■ ■ ■ ■ ■ Three-State Outputs ■ Fully TTL Compatible Inputs and Outputs ■ Advanced CMOS Technology High Speed Equal Access and Cycle Times — 12/15/20/25/35 ns (Commercial) — 15/20/25/35/45 ns (Industrial)
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P4C1256
--28-Pin
144-bit
32Kx8.
requir-35C
-35L28M
-35L32M
-45PI
-425JI
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Untitled
Abstract: No abstract text available
Text: P4C1256 HIGH SPEED 32K x 8 STATIC CMOS RAM A - FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ High Speed Equal Access and Cycle Times — 12/15/20/25/35 ns (Commercial) — 15/20/25/35/45 ns (Industrial) — 20/25/35/45/55/70 ns (Military)
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P4C1256
28-Pin
-55L32M
-70L32M
-20CM
-25CM
-35CM
-45CM
-55CM
-70CM
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0m02
Abstract: SMD code l32 30PF P4C1256 P4C1256L 2h22
Text: P4C1256 HIGH SPEED 32K x 8 STATIC CMOS RAM A - FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ High Speed Equal Access and Cycle Times — 12/15/20/25/35 ns (Commercial) — 15/20/25/35/45 ns (Industrial) — 20/25/35/45/55/70 ns (Military)
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P4C1256
-28-Pin
28-Pin
-32-Pin
P4C1256
144-bit
32Kx8.
-35DMB
-45DMB
0m02
SMD code l32
30PF
P4C1256L
2h22
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Untitled
Abstract: No abstract text available
Text: CY7C251 CY7C254 16K x 8 Power Switched and Reprogrammable PROM Features Functional Description • CMOS for optimum speed/power • Windowed for reprogramm ability • High speed The CY7C251 and CY7C254 are high-performance 16,384-word by 8-bit CMOS PROMs. When deselected, the
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CY7C251
CY7C254
7C251)
300-mil
600-mil
CY7C254
384-word
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