Untitled
Abstract: No abstract text available
Text: PRODUCT DETAIL Part Num: IXUV170N075S Description: POWER DEVICES > DISCRETE MOSFETs > N-Channel: Trench-Gate Power MOSFETs > 75V 1st Generation Trench Gate Power MOSFETs Configuration: Single Package Style: PLUS-220 SMD Status: Active Part Parameter IXUV170N075S
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IXUV170N075S
PLUS-220
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KDS 12 MHZ crystal 4 pin
Abstract: DSO321SBN DSO321SBM KDS 8 MHZ crystal DSO531SBM DSO321 KDS 12 MHZ crystal CRYSTAL "20 mhZ" KDS KDS 6 MHZ crystal Bn smd code
Text: SMD Crystal Oscillators Features NEW Low current consumption 5V type 3-state function ● DS0＊＊＊SBM:General purpose +5.0V HCMOS oscillator ● DS0＊＊＊SBN:Optimized characteristic for single gate
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DSO221SBM
DSO321SBM/SBN
DSO531SBM/SBN
DSO751SBM/SBN
DSO221SBM
DSO321SBM/SBN
DSO531SBM/SBN
DSO751SBM/SBN
KDS 12 MHZ crystal 4 pin
DSO321SBN
DSO321SBM
KDS 8 MHZ crystal
DSO531SBM
DSO321
KDS 12 MHZ crystal
CRYSTAL "20 mhZ" KDS
KDS 6 MHZ crystal
Bn smd code
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5962F0251101VXC
Abstract: 5962F0251101QEC 5962F0251101QXC IS1-1825ASRH-8 IS1-1825ASRH-Q IS-1825ASRH IS9-1825ASRH-8 IS9-1825ASRH-Q rt/CDFP4-F20 rt/5962F0251101VXC
Text: IS-1825ASRH TM Data Sheet February 2002 Single Event and Total Dose Hardened, High-Speed, Dual Output PWM FN9065 Features • Electrically Screened to DSCC SMD # 5962-02511 The single event and total dose hardened IS-1825ASRH pulse width modulator is designed to be used in high
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IS-1825ASRH
FN9065
5962F0251101VXC
5962F0251101QEC
5962F0251101QXC
IS1-1825ASRH-8
IS1-1825ASRH-Q
IS-1825ASRH
IS9-1825ASRH-8
IS9-1825ASRH-Q
rt/CDFP4-F20
rt/5962F0251101VXC
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5962F0251101VXC
Abstract: ld smd transistor MKT .1K IS-1825ASRH ISL71823ASRH ISL71823ASRHQD ISL71823ASRHQF IS0-1825ASRH-Q 5962F0251101QXC d16 smd
Text: IS-1825ASRH, ISL71823ASRH Data Sheet September 25, 2008 Single Event and Total Dose Hardened, High-Speed, Dual Output PWMs FN9065.3 Features • Electrically Screened to DSCC SMD # 5962-02511 The single event and total dose hardened IS-1825ASRH and ISL71823ASRH pulse width modulators are designed to be
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IS-1825ASRH,
ISL71823ASRH
FN9065
IS-1825ASRH
ISL71823ASRH
5962F0251101VXC
ld smd transistor
MKT .1K
ISL71823ASRHQD
ISL71823ASRHQF
IS0-1825ASRH-Q
5962F0251101QXC
d16 smd
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IS-1825ASRH
Abstract: 5962F0251101QEC 5962F0251101QXC 5962F0251101VEC IS1-1825ASRH-8 IS9-1825ASRH-8 IS9-1825ASRH-Q
Text: IS-1825ASRH Data Sheet June 14, 2005 Single Event and Total Dose Hardened, High-Speed, Dual Output PWM FN9065.1 Features • Electrically Screened to DSCC SMD # 5962-02511 The single event and total dose hardened IS-1825ASRH pulse width modulator is designed to be used in high
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IS-1825ASRH
FN9065
IS-1825ASRH
5962F0251101QEC
5962F0251101QXC
5962F0251101VEC
IS1-1825ASRH-8
IS9-1825ASRH-8
IS9-1825ASRH-Q
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Untitled
Abstract: No abstract text available
Text: IS-1825ASRH, ISL71823ASRH Data Sheet February 19, 2008 Single Event and Total Dose Hardened, High-Speed, Dual Output PWMs FN9065.2 Features • Electrically Screened to DSCC SMD # 5962-02511 The single event and total dose hardened IS-1825ASRH and ISL71823ASRH pulse width modulators are designed to be
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IS-1825ASRH,
ISL71823ASRH
FN9065
IS-1825ASRH
ISL71823ASRH
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Untitled
Abstract: No abstract text available
Text: STRH40N6SY3 N-channel 60V - 0.032Ω - SMD-0.5 Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH40N6SY3 60V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge
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STRH40N6SY3
100kRad
34Mev/cm
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Untitled
Abstract: No abstract text available
Text: STRH13N20SY3 N-channel 200V - 0.18Ω - SMD-0.5 Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH13N20SY3 200V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge
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STRH13N20SY3
100kRad
34Mev/cm
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smd DIODE code marking 20A
Abstract: smd code diode 20a STRH40N6SY1 STRH40N6SY3
Text: STRH40N6SY3 N-channel 60V - 0.032Ω - SMD-0.5 Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH40N6SY3 60V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge ■ Light weight
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STRH40N6SY3
100kRad
34Mev/cm
smd DIODE code marking 20A
smd code diode 20a
STRH40N6SY1
STRH40N6SY3
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CT8-13
Abstract: No abstract text available
Text: STRH13N20SY1 STRH13N20SY3 N-channel 200V - 0.18Ω - SMD-0.5 Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH13N20SY3 200 V STRH13N20SY3 200 V s ct 2 1 • Low RDS(on) ■ Fast switching ■ Single event effect (SEE) hardned ■
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STRH13N20SY1
STRH13N20SY3
STRH13N20SY3
100kRad
34Mev/cm
CT8-13
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st smd diode marking code
Abstract: STRH13N20SY1 STRH13N20SY3 STRH30N20SY3
Text: STRH13N20SY3 N-channel 200V - 0.18Ω - SMD-0.5 Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH13N20SY3 200V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge ■ Light weight
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STRH13N20SY3
100kRad
34Mev/cm
st smd diode marking code
STRH13N20SY1
STRH13N20SY3
STRH30N20SY3
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Untitled
Abstract: No abstract text available
Text: v4.0 40MX and 42MX FPGA Families Features • QML Certification High Capacity • Ceramic Devices Available to DSCC SMD • • • • • Ease of Integration Single Chip ASIC Alternative 2,000 to 36,000 Available Logic Gates Up to 2.5 Kbits Configurable Dual-Port SRAM
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35-Bit
MIL-STD-883
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STRH13N20SY3
Abstract: ST MAKE SMD DIODE
Text: STRH13N20SY3 N-channel 200V - 0.18Ω - SMD-0.5 Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH13N20SY3 200V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge ■ Light weight
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STRH13N20SY3
100kRad
34Mev/cm
STRH13N20SY3
ST MAKE SMD DIODE
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A42MX16 datasheet
Abstract: 240 pin rqfp drawing Actel A40MX04 SMD TRANSISTOR w18 A42MX36 smd diode wd v3 5252 F 1009 "integrated circuit" transistor smd w16 a42mx A42MX09
Text: v 3. 0 40MX and 42MX Families FPGAs Features • QML Certification High Capacity • Ceramic Devices Available to DSCC SMD • • • • • Ease of Integration Single Chip ASIC Alternative 2,000 to 36,000 Available Logic Gates Up to 2.5 Kbits Configurable Dual-Port SRAM
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35-Bit
MIL-STD-883
A42MX16 datasheet
240 pin rqfp drawing
Actel A40MX04
SMD TRANSISTOR w18
A42MX36
smd diode wd v3
5252 F 1009 "integrated circuit"
transistor smd w16
a42mx
A42MX09
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STRH40N6SY1
Abstract: JESD97 STRH40N6SY3
Text: STRH40N6SY1 STRH40N6SY3 N-channel 60V - 0.032Ω - SMD-0.5 rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH40N6SY1 60 V STRH40N6SY3 60 V 2 1 • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge
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STRH40N6SY1
STRH40N6SY3
100kRad
34Mev/cm
STRH40N6SY1
JESD97
STRH40N6SY3
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5252 F 1108
Abstract: 5252 F 1009 "integrated circuit" WD 969
Text: v 4. 0 40MX and 42MX FPGA Families Features • QML Certification High Capacity • Ceramic Devices Available to DSCC SMD • • • • • Ease of Integration Single Chip ASIC Alternative 2,000 to 36,000 Available Logic Gates Up to 2.5 Kbits Configurable Dual-Port SRAM
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35-Bit
MIL-STD-883
A40MX02
A40MX04
5252 F 1108
5252 F 1009 "integrated circuit"
WD 969
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Untitled
Abstract: No abstract text available
Text: STRH40N6SY1 STRH40N6SY3 N-channel 60V - 0.032Ω - SMD-0.5 rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH40N6SY1 60 V STRH40N6SY3 60 V 2 1 • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge
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STRH40N6SY1
STRH40N6SY3
100kRad
34Mev/cm
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A42MX16
Abstract: ACTEL A42MX09 40MX 42MX A40MX02 A40MX04 A42MX09 A42MX24 A42MX36 CQ256
Text: v 4 . 0. 1 40MX and 42MX FPGA Families Features • QML Certification High Capacity • Ceramic Devices Available to DSCC SMD • • • • • Ease of Integration Single Chip ASIC Alternative 2,000 to 36,000 Available Logic Gates Up to 2.5 Kbits Configurable Dual-Port SRAM
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35-Bit
MIL-STD-883
A42MX16
ACTEL A42MX09
40MX
42MX
A40MX02
A40MX04
A42MX09
A42MX24
A42MX36
CQ256
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10K ECL
Abstract: No abstract text available
Text: Alpha-Numeric Part Number Index P/N S eries SMD Pkg Options Description Package SMD Pkg Options Description P/N S eries Package A C M D L -X X X G .J Adv. CMOS Single Out 8 Pin DIP P9- 19 H C D L-X X X (G .J ) HCMOS Single Output 14 Pin DIP A I3 D -X X X
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OCR Scan
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10-Tap
10K ECL
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TRAILING TTL ACTIVE DELAY LINE
Abstract: rhombus delay lines
Text: Logic Buffered Delay Modules Gullwing & J Bend SMD Versions Logic Families: TTL - FAST - AC • ECL Programmables, Pulse Width Generators, Gated Oscillators, Customs. Output Delays up to 1000ns Single, Dual /Triple Independent, S&10 Tap Standard Configurations
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OCR Scan
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1000ns
100KECL
ACTIVE-6/93
TRAILING TTL ACTIVE DELAY LINE
rhombus delay lines
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scr tag 12
Abstract: D15C WD1050 bit-slice
Text: WESTERN O R P O R A T I O N WD1050 SMD C D IG IT A L WD1050 SMD Controller/Formatter FEATURES • 16 BIT HOST INTERFACE 9.677 MBITS/SEC DATA RATE SINGLE/MULTIPLE SECTOR TRANSFERS FIXED SECTOR FROMAT TTL COMPATIBLE INPUT/OUTPUT 68 PIN JEDEC TYPE C CHIP CARRIER PACKAGE
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OCR Scan
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WD1050
scr tag 12
D15C
bit-slice
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smd 345
Abstract: bit-slice WD1050 smd code BCR
Text: WESTERN C O R P O R DIGITAL A T I O N WD1050 SMD Controller/Formatter FEATURES • 16 BIT HOST INTERFACE 9.677 MBITS/SEC DATA RATE SINGLE/MULTIPLE SECTOR TRANSFERS FIXED SECTOR FROMAT TTL COMPATIBLE INPUT/OUTPUT 68 PIN JEDEC TYPE C CHIP CARRIER PACKAGE COMPATIBLE WITH SMD, MMD, FHT, LMD, AND
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OCR Scan
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WD1050
smd 345
bit-slice
smd code BCR
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Untitled
Abstract: No abstract text available
Text: M MOTOROLA Military 54LS30 Single 8-Input Positive NAND Gate MPO ELECTRICALLY TESTED PER: MIL-M-38510/30009 llltlll AVAILABLE AS: 1) JAN: JM38510/30009BXA 2) SMD: N/A 3)883: 54LS30/BXAJC LOGIC DIAGRAM X = CASE OUTLINE AS FOLLOWS: PACKAGE: CERDIP: C CERFLAT: D
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OCR Scan
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MIL-M-38510/30009
54LS30
JM38510/30009BXA
54LS30/BXAJC
56A-02
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Untitled
Abstract: No abstract text available
Text: M MOTOROLA M ilitary 54LS30 Single 8-Input Positive NAND Gate MPO Himi ELECTRICALLY TESTED PER: MIL-M-38510/30009 AVAILABLE AS: 1) JAN: JM38510/30009BXA 2) SMD: N/A 3)883: 54LS30/BXAJC LOGIC DIAGRAM X = CASE OUTLINE AS FOLLOWS: PACKAGE: CERDIP: C CERFLAT: D
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OCR Scan
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54LS30
MIL-M-38510/30009
JM38510/30009BXA
54LS30/BXAJC
56A-02
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